Quotables
"That’s an amazing invention, but who would ever want to use one of them?"
President Rutherford B. Hayes ; Said in 1876, after Alexander Graham Bell demonstrated the telephone to him at the White House
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8168547 | Manufacturing method of semiconductor device The transistor characteristics of a MIS transistor provided with a gate insulating film formed to contain oxide with a relative dielectric constant higher than that of silicon oxide are improved. After a high dielectric layer made of hafnium oxide is formed on a mai... | 05/01/2012 |
| 8143174 | Post-deposition treatment to enhance properties of Si-O-C low K films A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally tak... | 03/27/2012 |
| 8138103 | Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor device A plasma processing apparatus generates plasma by introducing microwaves into a processing chamber by using a planar antenna having a plurality of slots. By using the plasma processing apparatus, a nitrogen containing gas and a silicon containing gas introduced into... | 03/20/2012 |
| 8105962 | Method and a semiconductor device comprising a protection layer for reducing stress relaxation in a dual stress liner approach By providing a protection layer for suppressing stress relaxation in a tensile-stressed dielectric material during a dual stress liner approach, performance of N-channel transistors may be increased, while nevertheless maintaining a high degree of compatibility with... | 01/31/2012 |
| 8097542 | Etch stop layer of reduced thickness for patterning a dielectric material in a contact level of closely spaced transistors In a dual stress liner approach, an intermediate etch stop material may be provided on the basis of a plasma-assisted oxidation process rather than by deposition so the corresponding thickness of the etch stop material may be reduced. Consequently, the resulting asp... | 01/17/2012 |
| 8062983 | Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles Porous dielectric layers are produced by embedding and removing nanoparticles in composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the... | 11/22/2011 |
| 8034726 | Interlayer dielectric material in a semiconductor device comprising a doublet structure of stressed materials By forming a buffer material above differently stressed contact etch stop layers followed by the deposition of a further stress-inducing material, enhanced overall device performance may be accomplished, wherein an undesired influence of the additional stress-induci... | 10/11/2011 |
| 7994072 | Stress transfer by sequentially providing a highly stressed etch stop material and an interlayer dielectric in a contact layer stack of a semiconductor device By forming two or more individual dielectric layers of high intrinsic stress levels with intermediate interlayer dielectric material, the limitations of respective deposition techniques, such as plasma enhanced chemical vapor deposition, may be respected while never... | 08/09/2011 |
| 7915181 | Repair and restoration of damaged dielectric materials and films Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality... | 03/29/2011 |
| 7875561 | Interlayer dielectric material in a semiconductor device comprising stressed layers with an intermediate buffer material A highly stressed dielectric material, such as a tensile stressed material, may be deposited in a conformal manner so as to respect any deposition constraints caused by pronounced surface topography of highly scaled semiconductor devices, followed by the deposition ... | 01/25/2011 |
| 7871941 | Method for reducing resist poisoning during patterning of stressed nitrogen-containing layers in a semiconductor device By providing a silicon cap layer on a compressive silicon nitride layer, the diffusion of nitrogen into sensitive resist material may be efficiently reduced, while the silicon may be converted into a highly compressive silicon dioxide in a later manufacturing stage.... | 01/18/2011 |
| 7820559 | Structure to improve adhesion between top CVD low-K dielectric and dielectric capping layer An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is ... | 10/26/2010 |
| 7767593 | Semiconductor device including field effect transistors laterally enclosed by interlayer dielectric material having increased intrinsic stress By appropriately treating an interlayer dielectric material above P-channel transistors, the compressive stress may be significantly enhanced, which may be accomplished by expanding the interlayer dielectric material, for instance, by providing a certain amount of o... | 08/03/2010 |
| 7732349 | Manufacturing method of insulating film and semiconductor device The invention provides a manufacturing method of an insulating film having a plurality of pores, as well as a manufacturing method of a highly integrated semiconductor device with high yield. According to the invention, a porous insulating film is formed by forming ... | 06/08/2010 |
| 7727907 | Manufacturing method of semiconductor device and semiconductor device produced therewith A semiconductor device (having an interlayer insulating film) which is sufficiently low in the dielectric constant and high in the mechanical strength is provided. A manufacturing method of a semiconductor device includes: a step of forming a dielectric thin ... | 06/01/2010 |
| 7709401 | Method of making thermally programmable anti-reverse engineering interconnects wherein interconnects only conduct when heated above room temperature An interconnect and method of making the interconnect. The method includes forming a dielectric layer on a substrate, the dielectric layer having a top surface and a bottom surface; forming a first wire and a second wire in the dielectric layer, the first wire separ... | 05/04/2010 |
| 7645710 | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system The present invention generally provides methods and apparatuses that are adapted to form a high quality dielectric gate layer on a substrate. Embodiments contemplate a method wherein a metal plasma treatment process is used in lieu of a standard nitridization proce... | 01/12/2010 |
| 7592272 | Manufacturing method of semiconductor integrated circuit An object of the present invention is to provide a method of depositing yttrium-stabilized hafnia use for a DRAM capacitor insulating film while controlling the composition at a high accuracy by an atomic layer deposition method. The atomic deposition method is perf... | 09/22/2009 |
| 7563729 | Method of forming a dielectric film A method of forming a dielectric film on a substrate surface includes the steps of forming the dielectric film on the substrate surface in plural steps, and reforming, in each of the plural steps of forming the dielectric film, the dielectric film in an ambient prim... | 07/21/2009 |
| 7531466 | Metal organic deposition precursor solution synthesis and terbium-doped SiOthin film deposition A method of making a doped silicon oxide thin film using a doped silicon oxide precursor solution includes mixing a silicon source in an organic acid and adding 2-methoxyethyl ether to the silicon source and organic acid to from a preliminary precursor solution. The... | 05/12/2009 |
| 7517816 | Technique for creating different mechanical stress in different channel regions by forming an etch stop layer having differently modified intrinsic stress By providing a contact etch stop layer, the stress in channel regions of different transistor types may be effectively controlled, wherein tensile and compressive stress portions of the contact etch stop layer may be obtained by well-established processes, such as w... | 04/14/2009 |
| 7510982 | Creation of porosity in low-k films by photo-disassociation of imbedded nanoparticles Porous dielectric layers are produced by embedding and removing nanoparticles in composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the... | 03/31/2009 |
| 7510983 | Iridium/zirconium oxide structure Embodiments of an electronic apparatus and embodiments for methods of forming the electronic apparatus include a conductive layer having an iridium-based layer, where the conductive layer is disposed on a dielectric layer containing zirconium oxide. In various embod... | 03/31/2009 |
| 7501354 | Formation of low K material utilizing process having readily cleaned by-products Nano-porous low dielectric constant films are deposited utilizing materials having reactive by-products readily removed from a processing chamber by plasma cleaning. In accordance with one embodiment, an oxidizable silicon containing compound is reacted with an oxid... | 03/10/2009 |
| 7491655 | Semiconductor device and method of fabricating the same A semiconductor device using a TFT structure with high reliability is realized. As an insulating film used for the TFT, for example, a gate insulating film, a protecting film, an under film, an interlayer insulating film, or the like, a silicon nitride oxide film (S... | 02/17/2009 |
| 7439194 | Lanthanide doped TiOx dielectric films by plasma oxidation A dielectric film containing lanthanide doped TiOx and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A dielectric film is formed by eva... | 10/21/2008 |
| 7432126 | Substrate with semiconductor layer, electronic component, electronic circuit, printable composition and method for production thereof A substrate comprises at least one semiconductor layer applied to a substrate material, whereby the semiconductor layer comprises an inert matrix material, in which an inorganic semiconductor material is embedded in particle form. ... | 10/07/2008 |
| 7429541 | Method of forming trench isolation in the fabrication of integrated circuitry This invention includes methods of depositing a silicon dioxide comprising layer in the fabrication of integrated circuitry, and to methods of forming trench isolation in the fabrication of integrated circuitry. In one implementation, a method of depositing a silico... | 09/30/2008 |
| RE40507 | Method of forming pre-metal dielectric film on a semiconductor substrate including first layer of undoped oxide of high ozone:TEOS volume ratio and second layer of low ozone doped BPSG A method of forming a pre-metal dielectric film having good as deposited gapfill characteristics, as well as good mobile-ion gettering capability. The method involves first depositing a layer of high-ozone undoped silicon dioxide film having a high ozone/TEOS volume... | 09/16/2008 |
| 7419920 | Metal thin film and semiconductor comprising a metal thin film A metal oxide thin film may be obtained by providing a source gas and an oxidizer gas. The source gas may include a hydrolyzable metallic compound. The oxidizer gas may include a hydrate of a metal salt. The metal oxide thin film may be obtained by alternately feedi... | 09/02/2008 |
| 7419919 | Method of manufacturing semiconductor device A method for manufacturing a semiconductor device, in which a substrate is disposed in a chamber and a fluorine-containing silicon oxide film is formed on the substrate using a plasma CVD process. The fluorine-containing silicon oxide film is formed such that the re... | 09/02/2008 |
| 7419903 | Thin films Thin films are formed by formed by atomic layer deposition, whereby the composition of the film can be varied from monolayer to monolayer during cycles including alternating pulses of self-limiting chemistries. In the illustrated embodiments, varying amounts of impu... | 09/02/2008 |
| 7410913 | Method of manufacturing silicon rich oxide (SRO) and semiconductor device employing SRO Provided are methods for manufacturing silicon rich oxide (SRO) layers useful in the fabrication of semiconductor devices, for example, non-volatile memory devices, and methods for fabricating semiconductor devices incorporating such SRO layers. The methods include ... | 08/12/2008 |
| 7402533 | Masking without photolithography during the formation of a semiconductor device A method for forming a semiconductor device comprises forming a dielectric layer over a semiconductor wafer substrate assembly having closely spaced regions, such as a memory transistor array, and widely spaced regions, such as a periphery. Under conditions specifie... | 07/22/2008 |
| 7402532 | Structure to improve adhesion between top CVD low-k dielectric and dielectric capping layer An interconnect structure in which the adhesion between an upper level low-k dielectric material, such as a material comprising elements of Si, C, O, and H, and an underlying diffusion capping dielectric, such as a material comprising elements of C, Si, N and H, is ... | 07/22/2008 |
| 7372155 | Top layers of metal for high performance IC's A method of closely interconnecting integrated circuits contained within a semiconductor wafer to electrical circuits surrounding the semiconductor wafer. Electrical interconnects are held to a minimum in length-by making efficient use of polyimide or polymer as an ... | 05/13/2008 |
| 7371698 | Method of forming film pattern, active matrix substrate, electro-optic device, and electronic apparatus A method of forming a film pattern includes the steps of forming a bank for partitioning a pattern forming area including a first pattern forming area and a second pattern forming area having an intersection with the first pattern forming area and divided in the int... | 05/13/2008 |
| 7371697 | Ion-assisted oxidation methods and the resulting structures Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over d... | 05/13/2008 |
| 7368401 | Integrated circuit having a doped porous dielectric and method of manufacturing the same In one aspect of the invention, a method for forming an integrated circuit having an at least substantially doped porous dielectric includes forming a semiconductor device. The semiconductor device includes at least a portion of a semiconductor substrate. The method... | 05/06/2008 |
| 7365027 | ALD of amorphous lanthanide doped TiOfilms The use of atomic layer deposition (ALD) to form an amorphous dielectric layer of titanium oxide (TiOx) doped with lanthanide elements, such as samarium, europium, gadolinium, holmium, erbium and thulium, produces a reliable structure for use in a variety... | 04/29/2008 |
