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| Number | Title | Issue Date |
| 7960296 | Crystalline semiconductor film, method of manufacturing the same, and semiconductor device A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element soluti... | 06/14/2011 |
| 7906441 | System and method for mitigating oxide growth in a gate dielectric Oxide growth of a gate dielectric layer that occurs between processes used in the fabrication of a gate dielectric structure can be reduced. The reduction in oxide growth can be achieved by maintaining the gate dielectric layer in an ambient effective to mitigate ox... | 03/15/2011 |
| 7803720 | Coating process and equipment for reduced resist consumption A coating system and method of coating semiconductor wafers is disclosed that is able to maintain a wet condition on the outer portion of the semiconductor wafer to provide ease of spreading for a photo-resist or anti-reflective coating (ARC) that is being dispensed... | 09/28/2010 |
| 7723244 | Method for internal electrical insulation of a substrate for a power semiconductor module A method for internal electrical insulation of a substrate for a power semiconductor module having a framelike insulating housing with a cap and having an insulating substrate. The substrate has conductor tracks and power semiconductor components mounted thereon. Th... | 05/25/2010 |
| 7718550 | Method for low temperature growth of inorganic materials from solution using catalyzed growth and re-growth The present invention involves a method and apparatus for depositing a silicon oxide onto a substrate from solution at low temperatures in a manner that produces homogeneous growth of the silicon oxide. The method generally comprises the following steps: (a) Chemica... | 05/18/2010 |
| 7718551 | Method for forming photoresist layer A method for forming a photoresist layer is provided. The method includes following steps. A wafer is provided in a semiconductor machine. The wafer is spun at a first spin speed. A pre-wet solvent is dispensed on the spinning wafer by using a nozzle disposed at a f... | 05/18/2010 |
| 7704895 | Deposition method for high-k dielectric materials A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing th... | 04/27/2010 |
| 7582573 | Spin-on glass composition and method of forming silicon oxide layer in semiconductor manufacturing process using the same A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing polysilazane having a ... | 09/01/2009 |
| 7517815 | Spin-on glass composition, method of preparing the spin-on glass composition and method of forming a porous silicon oxide layer using the spin-on glass composition A spin-on glass composition includes a solvent, about 3 to about 20 percent by weight of a porogen, and about 3 to about 20 percent by weight of a silsesquioxane oligomer represented by formula (1), where, in the formula (1... | 04/14/2009 |
| 7435692 | Gas jet reduction of iso-dense field thickness bias for gapfill process A system and method affecting mass transport to reduce or eliminate iso-dense bias in spin-on-dielectric (SOD) or spin-on-glass (SOG) processes use a nozzle to dispense the liquid dielectric and a separate nozzle for jetting N2 or other gas onto a semicon... | 10/14/2008 |
| 7429369 | Silicon nanoparticle nanotubes and method for making the same A relatively thick electrode is positioned opposite the surface of a substrate/second electrode. The electrode and the substrate surface are both contacted by a solution including silicon nanoparticles. The substrate surface is completely immersed in the solution in... | 09/30/2008 |
| 7427570 | Porous organosilicate layers, and vapor deposition systems and methods for preparing same The present invention provides porous organosilicate layers, and vapor deposition systems and methods for preparing such layers on substrates. The porous organosilicate layers are useful, for example, as masks. ... | 09/23/2008 |
| 7410899 | Defectivity and process control of electroless deposition in microelectronics applications Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions. ... | 08/12/2008 |
| 7402535 | Method of incorporating stress into a transistor channel by use of a backside layer The present invention provides the method includes forming source/drain regions 170 in a semiconductor wafer substrate 110 adjacent a gate structure 130 located on a front side of the semiconductor wafer substrate 110. The source/drain re... | 07/22/2008 |
| 7387974 | Methods for providing gate conductors on semiconductors and semiconductors formed thereby A method of providing a gate conductor on a semiconductor is provided. The method includes defining an organic polymer plating mandrel on the semiconductor, activating one or more sites of the organic polymer plating mandrel, binding a seed layer to the activated si... | 06/17/2008 |
| 7384878 | Method for applying a layer to a hydrophobic surface A method of forming a coating. The method includes: providing a substrate having a surface; forming a layer of water on the surface; and forming a layer of a material on the layer of water. ... | 06/10/2008 |
| 7371434 | Liquid film forming method and solid film forming method A method of forming a liquid film characterized by dropping a liquid on a substrate from a dropping unit while rotating the substrate, moving the dropping unit in the radial direction from the inner periphery of the substrate to the outer periphery of the substrate ... | 05/13/2008 |
| 7371698 | Method of forming film pattern, active matrix substrate, electro-optic device, and electronic apparatus A method of forming a film pattern includes the steps of forming a bank for partitioning a pattern forming area including a first pattern forming area and a second pattern forming area having an intersection with the first pattern forming area and divided in the int... | 05/13/2008 |
| 7369947 | Quantification of adsorbed molecular contaminant using thin film measurement A test method for measuring adsorbed molecular contamination uses a test structure that includes a substrate comprising a plurality of separated test sites having a plurality separate thicknesses having a base design thickness and a designed thickness interrelations... | 05/06/2008 |
| 7367725 | Method for removing developing solution An apparatus (3) for removing developing solution from a substrate (30) includes a working table (36) for placing the substrate, a supporting frame (33) positioned on the working table, a gas dispensing nozzle (31) mounted on the s... | 05/06/2008 |
| 7368368 | Multi-chamber MOCVD growth apparatus for high performance/high throughput In one embodiment the present invention is a method of conducting multiple step multiple chamber chemical vapor deposition while avoiding reactant memory in the relevant reaction chambers. The method includes depositing a layer of semiconductor material on a substra... | 05/06/2008 |
| 7364939 | Active matrix display device In order to provide an active matrix display device in which a thick insulating film is preferably formed around an organic semiconductive film of a thin film luminescent device without damaging the thin film luminescent device, the active matrix display device is p... | 04/29/2008 |
| 7365000 | Method for fabricating semiconductor device Disclosed is a method for fabricating a semiconductor device capable of preventing an inter-layer insulation layer from being damaged during a wet cleaning process due to a density difference created by reliance on a thickness of a SOG layer subjected to a curing pr... | 04/29/2008 |
| 7358199 | Method of fabricating semiconductor integrated circuits A method of fabricating semiconductor integrated circuits includes (1) providing a spin-on tool comprising a rotatable platen for holding and spinning a wafer disposed thereon, a fluid supply system for providing spin-on solution onto the wafer, and a detector fixed... | 04/15/2008 |
| 7358554 | Semiconductor manufacturing apparatus for modifying-in-film stress of thin films, and product formed thereby An apparatus for depositing a thin film on a substrate and product produced thereby are disclosed. In particular, deposition of the thin film is carried out on the substrate having an applied pressure. This applied pressure flexes the substrate to reduce in-plane st... | 04/15/2008 |
| 7354834 | Semiconductor devices and methods to form trenches in semiconductor devices Semiconductor devices and methods of fabricating the same are disclosed. One example method may include forming sequentially a pad oxide film and a silicon nitride film on an entire surface of a semiconductor substrate, forming the trench by etching the silicon nitr... | 04/08/2008 |
| 7351669 | Method of forming a substantially closed void To form a substantially closed void between two structures on a substrate, a flowable liquid dielectric material is deposited to fill partially the space between the structures, and a surface is placed to bridge and substantially close the space between the structur... | 04/01/2008 |
| 7348283 | Mechanically robust dielectric film and stack A method for forming a mechanically robust dielectric film comprises depositing a dielectric film on a substrate and then inducing a compressive strain in a top surface of the dielectric film to form a compressive strained surface. The compressive strain may be indu... | 03/25/2008 |
| 7345002 | Replication and transfer of microstructures and nanostructures A method for the duplication of microscopic patterns from a master to a substrate is disclosed, in which a replica of a topographic structure on a master is formed and transferred when needed onto a receiving substrate using one of a variety of printing or imprint t... | 03/18/2008 |
| 7338917 | Purification catalyst for exhaust gas A purification catalyst for exhaust gas enhances the activity for each precious metal by effectively utilizing the precious metal without incurring a high production cost, thereby improving endurance. The purification catalyst for exhaust gas comprises a composite o... | 03/04/2008 |
| 7335391 | Method for coating implantable devices A method of forming a coating for an implantable medical device, such as a stent, is provided which includes applying a composition to the device in an environment having a selected pressure. ... | 02/26/2008 |
| 7335611 | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on... | 02/26/2008 |
| 7332409 | Methods of forming trench isolation layers using high density plasma chemical vapor deposition A method of forming a trench isolation layer can include forming an isolation layer in a trench using High Density Plasma Chemical Vapor Deposition (HDPCVD) with a carrier gas comprising hydrogen. Other methods are disclosed. ... | 02/19/2008 |
| 7328713 | Nozzle apparatus for stripping edge bead of wafer There is provided a nozzle apparatus for stripping an edge bead from a wafer, which includes a rotatable support arm, and a side rinse nozzle coupled to a leading end of the support arm to remove the bead of photoresist remaining on the edge of a wafer. The side rin... | 02/12/2008 |
| 7329619 | Method for patterning thin film, method and apparatus for fabricating flat panel display Disclosed is a method and apparatus for fabricating a patterned thin film layer within a flat panel display that employs a soft mold and heat treatment in place of a photolithographic process. The disclosed method may reduce process time as well as substantially min... | 02/12/2008 |
| 7323401 | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask A method of processing a thin film structure on a semiconductor substrate using an optically writable mask includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be etched in accordance with a predetermined pattern... | 01/29/2008 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceil... | 01/22/2008 |
| 7312164 | Selective passivation of exposed silicon A method for applying a passivation layer selectively on an exposed silicon surface includes use of a liquid phase solution supersaturated in silicon dioxide. The application is conducted at substantially atmospheric temperature and pressure and achieves an effectiv... | 12/25/2007 |
| 7312148 | Copper barrier reflow process employing high speed optical annealing A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier met... | 12/25/2007 |
| 7312162 | Low temperature plasma deposition process for carbon layer deposition A method of depositing a carbon layer on a workpiece includes placing the workpiece in a reactor chamber, introducing a carbon-containing process gas into the chamber, generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone... | 12/25/2007 |
