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| Number | Title | Issue Date |
| 8163659 | Method for oxide film formation and apparatus for the method In method and apparatus for oxide film formation, light in an ultraviolet light range is irradiated on a substrate, a starting gas of an organosilicon and an ozone gas are supplied to the substrate to form an oxide film on a surface of the substrate, and the ozone g... | 04/24/2012 |
| 8143173 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device includes: (a) forming a stress relaxation layer on a first surface having an electrode of a semiconductor substrate; (b) forming a wiring line so as to cover the electrode and the stress relaxation layer after step (... | 03/27/2012 |
| 8124545 | Methods of etching oxide, reducing roughness, and forming capacitor constructions The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1×10−6 are utilized during the etch of oxide (such as silicon dioxide or doped silicon dioxide). Two or more ... | 02/28/2012 |
| 8114786 | Heat treatment method, heat treatment apparatus and substrate processing apparatus Disclosed is a heat treatment unit 4 serving as a heat treatment apparatus, which includes a chamber 42 for containing a wafer W on which a low dielectric constant interlayer insulating film is formed, a formic acid supply device 44 for supplyin... | 02/14/2012 |
| 8114788 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device. The method includes forming an energy cured resin layer on a semiconductor substrate having an electrode pad and a passivation film; fusing the resin layer so that fusion of a surface section is progressed more than... | 02/14/2012 |
| 8114787 | Integrated circuit nanowires Implementations of encapsulated nanowires are disclosed. ... | 02/14/2012 |
| 8084372 | Substrate processing method and computer storage medium In the present invention, a coating solution containing polysilazane is applied to a substrate to form a coating film. Thereafter, an ultraviolet ray is applied to the coating film formed on the substrate to cut a molecular bond of polysilazane in the coating film. ... | 12/27/2011 |
| 8067316 | Method for manufacturing memory element A conductive paste including conductive particles each of which has a size of greater than or equal to 0.1 μm and less than or equal to 10 μm, a resin, and a solvent is placed over a first conductor and the solvent is vaporized. In this manner, a second conductor ... | 11/29/2011 |
| 8048814 | Methods and apparatus for aligning a set of patterns on a silicon substrate A method of aligning a set of patterns on a substrate, the substrate including a substrate surface, is disclosed. The method includes depositing a set of silicon nanoparticles on the substrate surface, the set of nanoparticles including a set of ligand molecules inc... | 11/01/2011 |
| 8030221 | Method for producing low-k l film, semiconductor device, and method for manufacturing the same Hydrophobicity of a low dielectric constant film comprising a porous silica film is improved by applying a raw material for forming a porous silica film onto a substrate, and performing vapor-phase transport treatment to expose the substrate to an atmosphere of orga... | 10/04/2011 |
| 8026186 | Microwave annealing method for device processing with plastic substrate The present invention provides a microwave annealing method for a plastic substrate. The method comprises pulsed microwave annealing to an organic photo-voltaic device to avoid warpage and degradation of the plastic substrate. Utilizing pulsed microwave annealing me... | 09/27/2011 |
| 8026185 | Method for manufacturing electronic circuit component An object of the present invention is to provide a method for manufacturing an electronic circuit component such as an organic TFT 1, which can manufacture an electronic circuit component excellent in reliability and having quality on a practical level, becau... | 09/27/2011 |
| 7989361 | Composition for dielectric thin film, metal oxide dielectric thin film using the same and preparation method thereof This invention pertains to a composition for a dielectric thin film, which is capable of being subjected to a low-temperature process. Specifically, the invention is directed to a metal oxide dielectric thin film formed using the composition, a preparation method th... | 08/02/2011 |
| 7985699 | Substrate processing method and storage medium A substrate processing method capable of preventing a substrate rear surface from being scratched when attracted onto an electrostatic chuck. In a coater/developer (11), a photocurable resin is coated onto a rear surface of a wafer (W), the resin is cured to ... | 07/26/2011 |
| 7972976 | VLSI fabrication processes for introducing pores into dielectric materials Porous dielectric layers are produced by introducing pores in pre-formed composite dielectric layers. The pores may be produced after the barrier material, the metal or other conductive material is deposited to form a metallization layer. In this manner, the conduct... | 07/05/2011 |
| 7910498 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device, including: (a) forming an energy cured resin layer on a semiconductor substrate having an electrode pad and a passivation film; (b) fusing the resin layer without being cured and shrunk by a first energy supply proc... | 03/22/2011 |
| 7897521 | Low dielectric constant plasma polymerized thin film and manufacturing method thereof Disclosed is a low dielectric constant plasma polymerized thin film using linear organic/inorganic precursors and a method of manufacturing the low dielectric constant plasma polymerized thin film through plasma enhanced chemical vapor deposition and annealing using... | 03/01/2011 |
| 7892985 | Method for porogen removal and mechanical strength enhancement of low-k carbon doped silicon oxide using low thermal budget microwave curing Improved methods for preparing a low-k dielectric material on a substrate using microwave radiation are provided. The use of microwave radiation allows the preparation of low-k films to be accomplished at low temperatures. According to various embodiments, microwave... | 02/22/2011 |
| 7825042 | Very low dielectric constant plasma-enhanced CVD films The present invention provides a method for depositing nano-porous low dielectric constant films by reacting an oxidizable silicon containing compound or mixture comprising an oxidizable silicon component and an oxidizable non-silicon component having thermally liab... | 11/02/2010 |
| 7799705 | Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precu... | 09/21/2010 |
| 7786022 | Method for forming insulating film with low dielectric constant In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR1)4 or R2nSi(OR3)4-n wherein R1s, R2(s) and R | 08/31/2010 |
| 7767592 | Method for forming a mask pattern for ion-implantation A method for forming a mask pattern for ion-implantation comprises: forming a gate line pattern over a semiconductor substrate; forming a coating layer on the surface of gate line pattern; performing a plasma treatment on the top portion of the gate line pattern; fo... | 08/03/2010 |
| 7745347 | Heat treatment apparatus, heat treatment method, and recording medium storing computer program carrying out the same An experiment is conducted in advance, for finding a temperature of a cooling plate attained as a result of balancing between a temperature of a substrate after heat treatment and a temperature of the cooling plate at the time of cooling of the substrate. Then, befo... | 06/29/2010 |
| 7713885 | Methods of etching oxide, reducing roughness, and forming capacitor constructions The invention includes methods in which one or more components of a carboxylic acid having an aqueous acidic dissociation constant of at least 1×10−6 are utilized during the etch of oxide (such as silicon dioxide or doped silicon dioxide). Two or more ... | 05/11/2010 |
| 7655576 | Insulator film, manufacturing method of multilayer wiring device and multilayer wiring device In a method for manufacturing a semiconductor device, including forming an insulator film including a material having Si—CH3 bond and Si—OH bond, and irradiating the insulator film with ultraviolet rays, the rate of decrease of C concentration by X-ra... | 02/02/2010 |
| 7651958 | Semiconductor device and method of manufacturing thereof A method of manufacturing a semiconductor device sealed in a cured silicone body by placing a semiconductor device into a mold and subjecting a curable silicone composition that fills the spaces between said mold and said semiconductor device to compression molding,... | 01/26/2010 |
| 7642199 | Silica and silica-like films and method of production A method of producing a silica or silica-like coating by forming a precursor formulation from oligomeric organosilicate. The precursor formulation is coated on a substrate as a continuous liquid phase. The precursor formulation is then cured in an ammoniacal atmosph... | 01/05/2010 |
| 7629272 | Ultraviolet assisted porogen removal and/or curing processes for forming porous low k dielectrics Processes for forming porous low k dielectric materials from low k dielectric films containing a porogen material include exposing the low k dielectric film to ultraviolet radiation. In one embodiment, the film is exposed to broadband ultraviolet radiation of less t... | 12/08/2009 |
| 7622399 | Method of forming low-dielectrics using a rapid curing process A method of forming a low dielectric constant structure. The method comprises providing at a first temperature a dielectric material having a first dielectric constant and a first elastic modulus, and curing the dielectric material by a thermal curing process, in wh... | 11/24/2009 |
| 7582572 | Method of manufacturing insulating film, method of manufacturing transistor, and method of manufacturing electronic device A method of manufacturing an insulating film includes coating a first liquid material in which polysilazane is dissolved on a substrate; decreasing dangling bonds of silicon (Si) in the first liquid material; after decreasing the dangling bonds, coating a second liq... | 09/01/2009 |
| 7569499 | Semiconductor device made by multiple anneal of stress inducing layer The invention provides a method of fabricating a semiconductor device. In one aspect, the method comprises forming a stress inducing layer over a semiconductor substrate, subjecting the stress inducing layer to a first temperature anneal, and subjecting the semicond... | 08/04/2009 |
| 7531465 | Method of manufacturing nitride-based semiconductor light emitting device Provided is a method of manufacturing a nitride-based semiconductor light-emitting device having an improved structure in which optical extraction efficiency is improved. The method of manufacturing a nitride-based semiconductor light-emitting device including an n-... | 05/12/2009 |
| 7521378 | Low temperature process for polysilazane oxidation/densification Semiconductor devices, structures and systems that utilize a polysilazane-based silicon oxide layer or fill, and methods of making the oxide layer are disclosed. In one embodiment, a polysilazane solution is deposited on a substrate and processed with ozone in a wet... | 04/21/2009 |
| 7485585 | Method of forming a thin film, method of manufacturing a gate structure using the same and method of manufacturing a capacitor using the same In a method of forming a thin film and methods of manufacturing a gate structure and a capacitor, a hafnium precursor including one alkoxy group and three amino groups, and an oxidizing agent are provided on a substrate. The hafnium precursor is reacted with the oxi... | 02/03/2009 |
| 7479463 | Method for heating a chemically amplified resist layer carried on a rotating substrate Embodiments of an apparatus and methods for heating a substrate and a sacrificial layer are generally described herein. Other embodiments may be described and claimed. ... | 01/20/2009 |
| 7473653 | Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups Methods of preparing a low stress porous low-k dielectric material on a substrate are provided. The methods involve the use of a structure former precursor and/or porogen precursor with one or more organic functional groups. In some cases, the structure former precu... | 01/06/2009 |
| 7470634 | Method for forming interlayer dielectric film for semiconductor device by using polyhedral molecular silsesquioxane Disclosed herein is a method for forming an interlayer dielectric film for a semiconductor device by using a polyhedral molecular silsesquioxane. According to the method, the polyhedral molecular silsesquioxane is used as a monomer for a siloxane-based resin or as a... | 12/30/2008 |
| 7446057 | Fabrication method A method for forming a multilevel structure on a surface by depositing a curable liquid layer on the surface; pressing a stamp having a multilevel pattern therein into the liquid layer to produce in the liquid layer a multilevel structure defined by the pattern; and... | 11/04/2008 |
| 7446058 | Adhesion enhancement for metal/dielectric interface An interconnect structure and method of fabricating the same in which the adhesion between a chemically etched dielectric material and a noble metal liner is improved are provided. In accordance with the present invention, a chemically etching dielectric material is... | 11/04/2008 |
| 7442633 | Decoupling capacitor for high frequency noise immunity Systems and methods are provided for an on-chip decoupling device and method. One aspect of the present subject matter is a capacitor. One embodiment of the capacitor includes a substrate, a high K dielectric layer doped with nano crystals disposed on the substrate,... | 10/28/2008 |
