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| Number | Title | Issue Date |
| 8138102 | Method of placing a semiconducting nanostructure and semiconductor device including the semiconducting nanostructure A method of placing a functionalized semiconducting nanostructure, includes functionalizing a semiconducting nanostructure including one of a nanowire and a nanocrystal, with an organic functionality including a functional group for bonding to a bonding surface, dis... | 03/20/2012 |
| 8133821 | Method of manufacturing porous insulating film, method of manufacturing semiconductor device, and semiconductor device A method includes forming an insulating film over a substrate by introducing a cyclic siloxane compound having a cyclic siloxane as a skeleton and having at least one volatile hydrocarbon group bonded to a side chain, and a silicon-containing compound into a plasma,... | 03/13/2012 |
| 8119542 | Method of preparing an electrically insulating film and application for the metallization of vias The present invention essentially relates to a method of preparing an electrically insulating film at the surface of an electrical conductor or semiconductor substrate, such as a silicon substrate. According to the invention, this method comprises: | 02/21/2012 |
| 8114785 | Electrical passivation of silicon-containing surfaces using organic layers Electrical structures and devices may be formed and include an organic passivating layer that is chemically bonded to a silicon-containing semiconductor material to improve the electrical properties of electrical devices. In different embodiments, the organic passiv... | 02/14/2012 |
| 8110509 | Method of fabricating light emitting devices A manufacturing apparatus is provided, which can improve a utilization efficiency of an evaporation material, reduce manufacturing costs of a light emitting device having an organic light emitting element, and shorten manufacturing time necessary to manufacture a li... | 02/07/2012 |
| 8105960 | Self-assembled sidewall spacer A semiconductor structure is provided that includes a spacer directly abutting a topographic edge of at least one patterned material layer. The spacer is a non-removable polymeric block component of a self-assembled block copolymer. A method of forming such a semico... | 01/31/2012 |
| 8105961 | Method and apparatus for using flex circuit technology to create a reference electrode channel A method of creating a sensor that may include applying a first conductive material on a first portion of a substrate to form a reference electrode and depositing a first mask over the substrate, the first mask having an opening that exposes the reference electrode ... | 01/31/2012 |
| 8101529 | Carbon nanotube resistor, semiconductor device, and manufacturing method thereof A process for producing a carbon nanotube resistor that is capable of providing a highly reliable resistor or fuse. The process comprises the step of introducing a carbon nanotube in a volatile solvent to a first concentration and conducting ultrasonic treatment the... | 01/24/2012 |
| 8101530 | Lithography patterning method A method for fabricating an integrated circuit device is disclosed. The method is a lithography patterning method that can include providing a substrate; forming a protective layer over the substrate; forming a conductive layer over the protective layer; forming a r... | 01/24/2012 |
| 8080483 | Double gyroid structure nanoporous films and nanowire networks A method of forming a nanoporous film is disclosed. The method comprises forming a coating solution including clusters, surfactant molecules, a solvent, and one of an acid catalyst and a base catalyst. The clusters comprise inorganic groups. The method further compr... | 12/20/2011 |
| 8053377 | Low stress photo-sensitive resin with sponge-like structure and devices manufactured employing same System and method for forming a structure including a MEMS device structure. In order to prevent warpage of a substrate arising from curing process for a sacrificial material (such as a photoresist), and from subsequent high temperature process steps, an improved sa... | 11/08/2011 |
| 8053376 | One-step synthesis and patterning of aligned polymer nanowires on a substrate In a method of making a polymer structure on a substrate a layer of a first polymer, having a horizontal top surface, is applied to a surface of the substrate. An area of the top surface of the polymer is manipulated to create an uneven feature that is plasma etched... | 11/08/2011 |
| 8012887 | Precursor addition to silicon oxide CVD for improved low temperature gapfill Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surfac... | 09/06/2011 |
| 7994071 | Compositions for forming organic insulating films, methods for forming organic insulating films using the compositions and organic thin film transistors comprising an organic insulating film formed by such a method Disclosed are compositions for forming organic insulating films and methods for forming organic insulating films using one or more of the compositions. The compositions include at least one ultraviolet (UV) curing agent, at least one water-soluble polymer and at lea... | 08/09/2011 |
| 7985698 | Methods of forming patterned photoresist layers over semiconductor substrates This invention comprises methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a semiconductor substrate is provided. An antireflective coating is formed over the semiconductor substrate. The antireflective coating has... | 07/26/2011 |
| 7981812 | Methods for forming ultra thin structures on a substrate Methods for forming an ultra thin structure using a method that includes multiple cycles of polymer deposition of photoresist (PDP) process and etching process. The embodiments described herein may be advantageously utilized to fabricate a submicron structure on a s... | 07/19/2011 |
| 7972975 | Method for forming a dielectric film and novel precursors for implementing said method The invention relates to dielectric layers with a low dielectric constant, said layers being used to separate metallic interconnections especially during the production of integrated circuit boards (in the BEOL part of the circuit). According to the invention, the d... | 07/05/2011 |
| 7968471 | Porous insulating film, method for producing the same, and semiconductor device using the same The present invention provides a process of producing a porous insulating film effective as an insulating film constituting a semiconductor device and a process of producing a porous insulating film having high adhesion to a semiconductor material, which is in conta... | 06/28/2011 |
| 7960295 | Film transistor and method for fabricating the same A method for fabricating a thin film transistor and a thin film transistor includes a polycrystalline silicon layer formed by irradiating an amorphous silicon layer with a laser beam through an organic layer formed on the amorphous silicon layer and removing the org... | 06/14/2011 |
| 7951729 | Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereor, and material for coupling a dielectric layer and a metal layer in a semiconductor device A passivating coupling material for, on the one hand, passivating a dielectric layer in a semiconductor device, and on the other hand, for permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. In a particular example, t... | 05/31/2011 |
| 7947611 | Method of improving initiation layer for low-k dielectric film by digital liquid flow meter A method for depositing a low dielectric constant film by flowing a oxidizing gas into a processing chamber, flowing an organosilicon compound from a bulk storage container through a digital liquid flow meter at an organosilicon flow rate to a vaporization injection... | 05/24/2011 |
| 7932188 | Mechanical enhancement of dense and porous organosilicate materials by UV exposure Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In one aspect of the present invention, an organosilicate glass film is ex... | 04/26/2011 |
| 7915180 | SiCOH film preparation using precursors with built-in porogen functionality A method of fabricating a dielectric material that has an ultra low dielectric constant (or ultra low k) using at least one organosilicon precursor is described. The organosilicon precursor employed in the present invention includes a molecule containing both an Si... | 03/29/2011 |
| 7902085 | Droplet ejecting apparatus, method of forming a thin film, and substrate for a display device A droplet ejecting apparatus, method of forming a thin film, and a substrate for a display device, wherein a droplet ejecting apparatus includes a first ejecting unit ejecting a first droplet on a substrate, a second ejecting unit ejecting a second droplet on the su... | 03/08/2011 |
| 7902086 | Prevention of oxidation of carrier ions to improve memory retention properties of polymer memory cell Improving memory retention properties of a polymer memory cell are disclosed. The methods include providing a semiconducting polymer layer containing at least one organic semiconductor and at least one of a carrier ion oxidation preventer and an electrode oxidation ... | 03/08/2011 |
| 7897519 | Composition and organic insulator prepared using the same Disclosed is a composition for preparing an organic insulator, including an organic silane material, having a vinyl group, an acetylene group or an acryl group as a functional group for participating in a crosslinking reaction, a crosslinking agent, and a solvent fo... | 03/01/2011 |
| 7879739 | Thin transition layer between a group III-V substrate and a high-k gate dielectric layer Embodiments of the invention provide a method to form a high-k dielectric layer on a group III-V substrate with substantially no oxide of the group III-V substrate between the substrate and high-k dielectric layer. Oxide may be removed from the substrate. An organom... | 02/01/2011 |
| 7879740 | Ferrocene-containing conductive polymer, organic memory device using the same and fabrication method of the organic memory device Disclosed are a ferrocene-containing conductive polymer, an organic memory device using the conductive polymer and a method for fabricating the organic memory device. The conductive polymer may include a fluorenyl repeating unit, a thienyl repeating unit and a diary... | 02/01/2011 |
| 7842622 | Method of forming highly conformal amorphous carbon layer A method of forming a conformal amorphous hydrogenated carbon layer on an irregular surface of a semiconductor substrate includes: vaporizing a hydrocarbon-containing precursor; introducing the vaporized precursor and an argon gas into a CVD reaction chamber inside ... | 11/30/2010 |
| 7838440 | Method for manufacturing semiconductor device having porous low dielectric constant layer formed for insulation between metal lines The present invention related to a method for manufacturing a semiconductor device. More particularly, this method describes how to manufacture a semiconductor device having a porous, low dielectric constant layer formed between metal lines, comprising an insulation... | 11/23/2010 |
| 7829474 | Method for arraying nano material and method for fabricating liquid crystal display device using the same A method for arraying nano material includes preparing a substrate coated with a dispersion solution where nano materials are dispersed and arraying the nano materials in the dispersion solution, in a uniform direction using a charged body. ... | 11/09/2010 |
| 7825041 | Method of reworking a semiconductor substrate and method of forming a pattern of a semiconductor device A method of reworking a semiconductor substrate and a method of forming a pattern of semiconductor device using the same without damage to an organic anti-reflective coating (ARC) is provided. The method of reworking a semiconductor substrate includes forming a phot... | 11/02/2010 |
| 7803719 | Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device A material for passivating a dielectric layer in a semiconductor device has a molecular structure permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. The contemplated material may be constituted by multiple organic co... | 09/28/2010 |
| 7790631 | Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metal Methods and apparatuses to selectively deposit a dielectric on a self-assembled monolayer (“SAM”) adsorbed metal are described. A wafer includes a device having a first electrode. A first self-assembled monolayer is deposited on the wafer covering the first elec... | 09/07/2010 |
| 7790630 | Silicon-doped carbon dielectrics A silicone-doped carbon interlayer dielectric (ILD) and its method of formation are disclosed. The ILD's dielectric constant and/or its mechanical strength can be tailored by varying the ratio of carbon-to-silicon in the silicon-doped carbon matrix. ... | 09/07/2010 |
| 7776764 | Single walled carbon nanotubes coated with dielectric substance and TFT using thereof The present invention relates to a technology for printing a thin film transistor (TFT) using single walled carbon nanotubes coated with dielectric substance having a thickness of several nm and thus capable of improving significantly a low on/off ratio of an existi... | 08/17/2010 |
| 7759261 | Method for producing layers located on a hybrid circuit A method for obtaining layers defined on a hybrid circuit. The hybrid circuit including a substrate and at least one elementary circuit that includes a first facet and a second facet, being hybridized via the second facet to a facet of the substrate. This facet of t... | 07/20/2010 |
| 7754619 | Method for forming a coating with a liquid, and method for manufacturing a semiconductor device A method of forming a liquid coating on a substrate that reduces the amount of consumption of the coating liquid and achieves a more even distribution of the thickness of the liquid coating film. The method may include supplying a solvent to a surface of a substrate... | 07/13/2010 |
| 7749921 | Semiconductor element, method for manufacturing the semiconductor element, electronic device and method for manufacturing the electronic device A manufacturing method of a semiconductor element provided with a semiconductor layer containing a crystal of an organic semiconductor material of the invention includes the steps of (i) forming a frame (12) on a substrate (base) (11), and (ii) forming... | 07/06/2010 |
| 7732348 | Method of producing a porous dielectric element and corresponding dielectric element A porous dielectric element is produced by forming a first dielectric and a second dielectric. The second dielectric is dispersed in the first dielectric. The second dielectric is then removed from the second dielectric by using a chemical dissolution. The removal o... | 06/08/2010 |
