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| Number | Title | Issue Date |
| 8445311 | Method of fabricating a differential doped solar cell A method of fabricating a differential doped solar cell is provided. The method comprises the steps of (a) providing a light doped semiconductor substrate; (b) forming a heavy doped layer having the same type of dopant used in step (a) on a front surface of the semi... | 05/21/2013 |
| 8420437 | Method for forming an EMI shielding layer on all surfaces of a semiconductor package Disclosed is a method for forming an EMI shielding layer on all surfaces of a semiconductor package in order to enhance EMI shielding effect on all surfaces and to prevent electrical short to external terminals of the semiconductor package. According to the method, ... | 04/16/2013 |
| 8415195 | Method for manufacturing solar cell module In manufacturing of a solar cell module in which a solar cell having a surface electrode to which a tab lead is connected is sealed with a resin, the step of connecting the tab lead and the step of sealing the solar cell with the resin are performed simultaneously a... | 04/09/2013 |
| 8389322 | Photodiode array, method of manufacturing the same, and radiation detector A theme is to prevent the generation of noise due to damage in a photodetecting portion in a mounting process in a photodiode array, a method of manufacturing the same, and a radiation detector. In a photodiode array, wherein a plurality of photodiodes (4) ar... | 03/05/2013 |
| 7964434 | Sodium doping method and system of CIGS based materials using large scale batch processing A method of processing a plurality of photovoltaic materials in a batch process includes providing at least one transparent substrate having an overlying first electrode layer and an overlying copper species based absorber precursor layer within an internal region o... | 06/21/2011 |
| 7732247 | Isolation techniques for reducing dark current in CMOS image sensors Isolation methods and devices for isolating regions of a semiconductor device. The isolation method and structure include forming an isolating trench in an active area and filling the trench with a doped conductive material containing silicon. Suitable conductive ma... | 06/08/2010 |
| 7727794 | Photodiode array, method for manufacturing same, and radiation detector A theme is to prevent the generation of noise due to damage in a photodetecting portion in a mounting process in a photodiode array, a method of manufacturing the same, and a radiation detector. In a photodiode array, wherein a plurality of photodiodes (4) ar... | 06/01/2010 |
| 7416993 | Patterned nanowire articles on a substrate and methods of making the same Nanowire articles and methods of making the same are disclosed. A conductive article includes a plurality of inter-contacting nanowire segments that define a plurality of conductive pathways along the article. The nanowire segments may be semiconducting nanowires, m... | 08/26/2008 |
| 7344910 | Self-aligned photodiode for CMOS image sensor and method of making A method for forming a photodiode that is self-aligned to a transfer gate while being compatible with a metal silicide process is disclosed. The method comprises forming a gate stack of gate oxide, polysilicon, and a sacrificial/disposable cap insulator over the pol... | 03/18/2008 |
| 7342252 | Thin film transistor array substrate and fabricating method thereof A thin film transistor array substrate structure includes a plurality of data lines; a plurality of gate lines intersecting the data lines to define pixel areas, the gate line being adjacent to at least two pixel areas; a plurality of common lines disposed between t... | 03/11/2008 |
| 7329557 | Method of manufacturing solid-state imaging device with P-type diffusion layers A solid-state imaging device includes: a plurality of N-type photodiode regions formed inside a P-type well; a gate electrode having one edge being positioned adjacent to each of the photodiode regions; a N-type drain region positioned adjacent to the other edge of ... | 02/12/2008 |
| 7314775 | IT-CCD and manufacturing method thereof The present invention provides a power-thrifty IT-CCD having a charge transfer electrode area thinned for improving the light reception efficiency of a photoelectric conversion section and being capable of executing high-speed and high-sensitivity transfer without l... | 01/01/2008 |
| 7285438 | Solid-state imaging device and method for manufacturing solid-state imaging device A plurality of optical sensors (4) are arranged in a surface region of a semiconductor substrate (6) in a matrix pattern, and electric charge generated by the optical sensors (4) is transferred by first and second transfer electrodes (12 ... | 10/23/2007 |
| 7223953 | Image sensor and method of manufacturing the same An image sensor and a method of manufacturing the same are disclosed. When forming an impurity region for a photodiode, the photodiode can be exposed by reducing the impurity region. Thus, a depletion region of the photodiode, formed when the sensor operates, extend... | 05/29/2007 |
| 7198976 | Solid-state imaging device and method for manufacturing the same Channel stop sections are formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semic... | 04/03/2007 |
| 7186595 | Solid picture element manufacturing method A solid picture element that transfers charges completely from a photodiode portion to an amplifying transistor portion to substantially eliminate residual images and methods of its manufacture are disclosed. The solid picture element includes a buried photodiode an... | 03/06/2007 |
| 7166489 | Complementary metal oxide semiconductor image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-lens array, in which the CMOS ... | 01/23/2007 |
| 7090503 | Interposer with compliant pins An electrical interposer including first and second surfaces is provided. A plurality of compliant pins are connected to the first surface of the substrate, each of the compliant pins having a drawn body with at least one side wall extending along a longitudinal axi... | 08/15/2006 |
| 7075128 | Charge transfer element having high output sensitivity A charge transfer element comprising a reverse conductive type well formed on the surface of one conductive type semiconductor substrate, the one conductive type channel region extending in one direction relative to the well, a transfer electrode formed intersecting... | 07/11/2006 |
| 7037748 | CMOS image sensor and method for manufacturing the same A CMOS image sensor and a manufacturing method thereof, wherein the gates of several transistors of the CMOS image sensor are formed in an active region defined by an isolation region for a unit pixel of the CMOS image sensor, and a passivation layer composed of ins... | 05/02/2006 |
| 7026185 | Methods of fabricating image sensors including local interconnections A pixel of a semiconductor-based image detector includes a photodetector, at least one switching device serially connected to the photodetector and a bypass device interposed between the photodetector and a power supply voltage. Accordingly, even though excess charg... | 04/11/2006 |
| 7015056 | Electro-mechanical device having a charge dissipation layer and a method of manufacture therefor The present invention provides a micro-electro-mechanical system (MEMS) device, a method of manufacture therefore, and an optical communications system including the same. The device includes an electrode located over a substrate and a charge dissipation layer locat... | 03/21/2006 |
| 6927091 | Method for fabricating solid-state imaging device Disclosed is a method for fabricating a solid-state imaging device including a semiconductor substrate of a first conductivity type, a plurality of light-receiving sections provided at a distance in the surface region of the semiconductor substrate, and channel stop... | 08/09/2005 |
| 6919219 | Photon-blocking layer An embodiment of the invention is a method to reduce light induced corrosion and re-deposition of a metal, 8, (such as copper) that is used to make the interconnect wiring during the semiconductor manufacturing process. The light induced corrosion and re-depo... | 07/19/2005 |
| 6902945 | Tapered threshold reset FET for CMOS imagers A sensor may be formed with a transistor comprising a gate that has both n-type and p-type regions to increase the gate work function. In combination with moving the p-type well such that the p-type well only partially dopes the channel of the transistor, the increa... | 06/07/2005 |
| 6869815 | Electro-mechanical device having a charge dissipation layer and a method of manufacture therefor The present invention provides a micro-electro-mechanical system (MEMS) device, a method of manufacture therefore, and an optical communications system including the same. The device includes an electrode located over a substrate and a charge dissipation layer locat... | 03/22/2005 |
| 6858450 | Method of alternating grounded/floating poly lines to monitor shorts A method for in-line testing of a chip to include multiple independent bit Flash memory devices, includes the steps of: grounding every other polysilicon line on the chip to emulate the multiple independent bit Flash memory devices, where an oxide line reside betwee... | 02/22/2005 |
| 6849886 | CMOS image sensor and method for manufacturing the same A CMOS image sensor and a method for manufacturing the same, capable of preventing an interface between an active region and a field region in the CMOS image sensor from being damaged by ion implantation. The method comprises the steps of depositing a sacrificial ox... | 02/01/2005 |
| 6841807 | PIN photodiode Disclosed is a PIN photodiode used for a light-receiving element for optical communication. The PIN photodiode comprises a gate electrode structure consisting of a gate insulation layer and a gate electrode pad which prevent a bonding layer from being excessively de... | 01/11/2005 |
| 6794214 | Lock in pinned photodiode photodetector A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time. A specified pattern is sent, and the output bins are investigated to... | 09/21/2004 |
| 6777769 | Light-receiving element, light-receiving element array and light-receiving module and method for high frequency characteristics A light-receiving element, comprises an absorption layer formed on a semiconductor substrate, a window layer formed on the absorption layer, a first electrode formed on the window layer, a second electrode formed on the window layer and electrically connected to the... | 08/17/2004 |
| 6774420 | Image sensor An image sensor with improved productivity and sensitivity is provided. The image sensor includes a plurality of unit pixels, each unit pixel including an oxide film formed upon a semiconductor substrate; a gate electrode formed on the oxide film; a photodiode N-typ... | 08/10/2004 |
| 6686220 | Retrograde well structure for a CMOS imager A retrograde and periphery well structure for a CMOS imager is disclosed which improves the quantum efficiency and signal-to-noise ratio of the photosensing portion imager. The retrograde well comprises a doped region with a vertically graded dopant conce... | 02/03/2004 |
| 6660537 | Method of inducing movement of charge carriers through a semiconductor material A conductive trace is formed over and insulated from a region of semiconductor material, such as a region adjacent to the n+ region of an n+/p- photodiode, and a sawtooth current is made to flow through the conductive trace. The sawtooth current induces c... | 12/09/2003 |
| 6600202 | Compact sensing apparatus having reduced cross section and methods of mounting same A compact sensing apparatus having reduced cross section and methods are provided for sensing the magnitude and direction of an electrical or magnetic field. The compact sensing apparatus and method preferably provide one of two transducer orientations in... | 07/29/2003 |
| 6599772 | Solid-state pickup element and method for producing the same A solid-state pickup element achieves both improvement in sensitivity and reduction of pixel size and a method thereof, includes a first conductive type semiconductor area, which is formed at least so as to include the inside of the semiconductor substrat... | 07/29/2003 |
| 6593165 | Circuit-incorporating light receiving device and method of fabricating the same A circuit-incorporating light receiving device includes an integrated circuit and a photodiode. The integrated circuit and the photodiode are provided on a single semiconductor substrate. The integrated circuit includes a transistor having a polycrystalli... | 07/15/2003 |
| 6573120 | Solid state imaging device for achieving enhanced zooming characteristics and method of making the same A barrier area is located adjacent a horizontal transfer area and spaced from a field insulating area. The barrier area includes an insulating layer and a conductor extending from the horizontal transfer layer over the surface of a semiconductor substrate... | 06/03/2003 |
| 6489642 | Image sensor having improved spectral response uniformity An image sensor, includes a semiconductor substrate; a photosensor having, a first photosensing region including a first stack of one or more layers of transparent materials overlying the substrate, the first photosensing region having a spectral response... | 12/03/2002 |
| 6458620 | Semiconductor device and method for producing the same A photo-detecting device includes: a semiconductor substrate; a multilayer structure formed on the semiconductor substrate; an island-like photo-detecting region formed in at least a portion of the multilayer structure, the island-like photo-detecting reg... | 10/01/2002 |
