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| Number | Title | Issue Date |
| 8183166 | Dielectric layer structure and manufacturing method thereof A method for fabricating a dielectric layer structure includes providing a substrate, blanketly forming a low-k dielectric layer of an interlayer dielectric (ILD) layer, the low-k dielectric layer covering at least a first metal interconnect structure on the substra... | 05/22/2012 |
| 8158536 | Low dielectric constant films and manufacturing method thereof, as well as electronic parts using the same While a fine porous diamond particle film has been known as a high heat resistant and low dielectric constant film and also has high mechanical strength and heat conductivity, and is expected as an insulating film for multi-layered wirings in semiconductor integrate... | 04/17/2012 |
| 8153537 | Method for fabricating semiconductor devices using stress engineering There is provided a method for fabricating a semiconductor device comprising the formation of a first device in the first device region, the first device comprising first diffusion regions. A stressor layer covering the substrate in the first device region and the f... | 04/10/2012 |
| 8138101 | Manufacturing method for semiconductor device The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation ch... | 03/20/2012 |
| 8119541 | Modulation of stress in stress film through ion implantation and its application in stress memorization technique Some example embodiments of the invention provide a method to improve the performance of MOS devices by increasing the stress in the channel region. An example embodiment for a NMOS transistor is to form a tensile stress layer over a NMOS transistor. A heavy ion imp... | 02/21/2012 |
| 8119540 | Method of forming a stressed passivation film using a microwave-assisted oxidation process A method for forming a stressed passivation film. In one embodiment, the method includes depositing a silicon nitride film over an integrated circuit structure on a substrate and embedding oxygen into a surface of the silicon nitride film by exposing the silicon nit... | 02/21/2012 |
| 8114784 | Laminated stress overlayer using In-situ multiple plasma treatments for transistor improvement Integrated circuits (ICs) commonly contain pre-metal dielectric (PMD) liners with compressive stress to increase electron and hole mobilities in MOS transistors. The increase is limited by the thickness of the PMD liner. The instant invention is a multi-layered PMD ... | 02/14/2012 |
| 8084371 | Field effect transistors, methods of fabricating a carbon-insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor Field effect transistors, methods of fabricating a carbon insulating layer using molecular beam epitaxy and methods of fabricating a field effect transistor using the same are provided, the methods of fabricating the carbon insulating layer include maintaining a sub... | 12/27/2011 |
| 8084370 | Hafnium tantalum oxynitride dielectric Electronic apparatus and methods may include a hafnium tantalum oxynitride film on a substrate for use in a variety of electronic systems. The hafnium tantalum oxynitride film may be structured as one or more monolayers. The hafnium tantalum oxynitride film may be f... | 12/27/2011 |
| 8067315 | Microstructure device including a compressively stressed low-k material layer A nitrogen-containing silicon carbide material may be deposited on the basis of a single frequency or mixed frequency deposition recipe with a high internal compressive stress level up to 1.6 GPa or higher. Thus, this dielectric material may be advantageously used i... | 11/29/2011 |
| 8058183 | Restoring low dielectric constant film properties A method for restoring the dielectric constant of a low dielectric constant film is described. A porous dielectric layer having a plurality of pores is formed on a substrate. The plurality of pores is then filled with an additive to provide a plugged porous dielectr... | 11/15/2011 |
| 8053375 | Super-dry reagent compositions for formation of ultra low k films An ultra low k dielectric film, including a silicon film containing porosity deriving from a porogen, as formed from a precursor silane and a porogen, wherein the precursor silane has a water content below 10 ppm, based on total weight of the precursor silane, and/o... | 11/08/2011 |
| 8034725 | Method of eliminating small bin defects in high throughput TEOS films This invention provides a high throughput PECVD process for depositing TEOS films in a multi-station sequential deposition chamber. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing small bin defects. The m... | 10/11/2011 |
| 8030220 | Plasma treatment of a semiconductor surface for enhanced nucleation of a metal-containing layer A method for forming a dielectric layer is provided. The method may include providing a semiconductor surface and etching a thin layer of the semiconductor substrate to expose a surface of the semiconductor surface, wherein the exposed surface is hydrophobic. The me... | 10/04/2011 |
| 8021990 | Gate structure and method A MOSFET structure including silicate gate dielectrics with nitridation treatments of the gate dielectric prior to gate material deposition. ... | 09/20/2011 |
| 8017527 | Method and apparatus to reduce defects in liquid based PECVD films Apparatuses and methods for diverting a flow of a liquid precursor during flow stabilization and plasma stabilization stages during PECVD processes are effective at eliminating particle defects in PECVD films deposited using a liquid precursor. ... | 09/13/2011 |
| 8003547 | Method of manufacturing semiconductor device A substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of confirming an operation of a liquid flowrate control device are provided. The substrate processing apparatus comprises: a process chamber accommodating a substrate; a... | 08/23/2011 |
| 7998882 | Particle reduction in PECVD processes for depositing low-k material by using a plasma assisted post-deposition step When forming dielectric materials of reduced dielectric constant in sophisticated metallization systems, the creation of defect particles on the dielectric material may be reduced during a plasma enhanced deposition process by inserting an inert plasma step after th... | 08/16/2011 |
| 7998880 | Low k dielectric CVD film formation process with in-situ imbedded nanolayers to improve mechanical properties A low k dielectric stack having an effective dielectric constant k, of about 3.0 or less, in which the mechanical properties of the stack are improved by introducing at least one nanolayer into the dielectric stack. The improvement in mechanical properties is achiev... | 08/16/2011 |
| 7998881 | Method for making high stress boron-doped carbon films Transistor architectures and fabrication processes generate channel strain without adversely impacting the efficiency of the transistor fabrication process while preserving the material quality and enhancing the performance of the resulting transistor. Transistor st... | 08/16/2011 |
| 7994069 | Semiconductor wafer with low-K dielectric layer and process for fabrication thereof To improve the mechanical strength of a wafer comprising a low-k dielectric layer, the low-k dielectric layer is formed so as to have certain regions of low dielectric constant and the remainder having a higher mechanical strength. The higher-strength regions may ha... | 08/09/2011 |
| 7994070 | Low-temperature dielectric film formation by chemical vapor deposition A method for depositing a dielectric film on a substrate includes positioning a plurality of substrates in a process chamber, heating the process chamber to a deposition temperature between 400° C. and less than 650° C., flowing a first process gas comprising wate... | 08/09/2011 |
| 7989360 | Semiconductor processing methods, and methods for forming silicon dioxide Some embodiments include methods for semiconductor processing. A semiconductor substrate may be placed within a reaction chamber. The semiconductor substrate may have an inner region and an outer region laterally outward of said inner region, and may have a depositi... | 08/02/2011 |
| 7985697 | Wafer level package and method of fabricating the same Provided are a wafer level package in which a communication line can be readily formed between an internal device and the outside of the package, and a method of fabricating the wafer level package. The wafer level package includes a first substrate having a cavity ... | 07/26/2011 |
| 7985696 | Method of manufacturing semiconductor device A method for manufacturing a semiconductor device, in which a substrate is disposed in a chamber and a fluorine-containing silicon oxide film is formed on the substrate using a plasma CVD process. The fluorine-containing silicon oxide film is formed such that the re... | 07/26/2011 |
| 7981810 | Methods of depositing highly selective transparent ashable hardmask films The present invention addresses this need by providing a method for forming transparent PECVD deposited ashable hardmasks (AHMs) that have high plasma etch selectivity to underlying layers. Methods of the invention involve depositing the AHM using dilute hydrocarbon... | 07/19/2011 |
| 7981811 | Semiconductor device and method for manufacturing same A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film... | 07/19/2011 |
| 7977257 | Methods of manufacturing semiconductor devices In a semiconductor device and a method of manufacturing a semiconductor device, a lower electrode is formed on a semiconductor substrate. A first zirconium oxide layer is formed on the lower electrode by performing a first deposition process using a first zirconium ... | 07/12/2011 |
| 7977256 | Method for removing a pore-generating material from an uncured low-k dielectric film A method of forming a porous low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to... | 07/12/2011 |
| 7972974 | Gallium lanthanide oxide films Electronic apparatus and methods of forming the electronic apparatus include a gallium lanthanide oxide film for use in a variety of electronic systems. The gallium lanthanide oxide film may be structured as one or more monolayers. The gallium lanthanide oxide film ... | 07/05/2011 |
| 7960294 | Method of modifying interlayer adhesion Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including depositing a barrier layer on t... | 06/14/2011 |
| 7955992 | Method of passivating and encapsulating CdTe and CZT segmented detectors A method of forming a passivation layer comprises contacting at least one surface of a wide band-gap semiconductor material with a passivating agent comprising an alkali hypochloride to form the passivation layer on said at least one surface. The passivation layer m... | 06/07/2011 |
| 7932187 | Method for fabricating a semiconductor device A semiconductor device has a first interlayer insulating film formed on a substrate, having a first interconnection buried therein, and having a depressed portion and an insulating barrier film formed on the first interlayer insulating film. A second interlayer insu... | 04/26/2011 |
| 7910496 | Technique for forming an interlayer dielectric material of increased reliability above a structure including closely spaced lines By removing excess material of an interlayer dielectric material deposited by SACVD, the gap filling capabilities of this deposition technique may be exploited, while, on the other hand, negative effects of this material may be reduced. In other aspects, a buffer ma... | 03/22/2011 |
| 7888273 | Density gradient-free gap fill Multi-cycle methods result in dense, seamless and void-free dielectric gap fill are provided. The methods involve forming liquid or flowable films that partially fill a gap, followed by a solidification and/or anneal process that uniformly densifies the just-formed ... | 02/15/2011 |
| 7884033 | Method of depositing fluids within a microelectric topography processing chamber An apparatus for processing microelectronic topographies, a method of use of such an apparatus, and a method for passivating hardware of microelectronic processing chambers are provided. The apparatus includes a substrate holder configured to support a microelectron... | 02/08/2011 |
| 7884032 | Thin film deposition A system, method and apparatus is capable of producing layers of various materials stacked on one another on a substrate without exposing the substrate to the pressure and contaminants of ambient air until the stack is complete. In one aspect, the stack of layers ca... | 02/08/2011 |
| 7879738 | Charge trapping dielectric structure for non-volatile memory An integrated circuit structure comprises a bottom dielectric layer on a substrate, a middle dielectric layer, and a top dielectric layer. The middle dielectric layer has a top surface and a bottom surface, and comprises a plurality of materials. Respective concentr... | 02/01/2011 |
| 7871940 | Apparatus and process for producing thin films and devices A silicon nitride thin film formation apparatus is provided for stationary and moving substrates and a process for forming such films. The process provides high uniformity of film thickness and film properties as well as a high deposition rate. The film properties a... | 01/18/2011 |
| 7867918 | Semiconductor topography including a thin oxide-nitride stack and method for making the same A semiconductor topography is provided which includes a silicon dioxide layer with a thickness equal to or less than approximately 10 angstroms and a silicon nitride layer arranged upon the silicon dioxide layer. In addition, a method is provided which includes grow... | 01/11/2011 |
