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| Number | Title | Issue Date |
| 8183165 | Plasma processing method According to the present invention,when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to from an oxynitride film, the microwave is intermittently supplied. By the intermittent supply ... | 05/22/2012 |
| 7977255 | Method and system for depositing a thin-film transistor A method for forming a thin-film transistor gate insulating layer over a substrate disposed in a processing chamber is provided. The method includes: introducing a processing gas for producing a plasma in the processing chamber; heating the substrate to a substrate ... | 07/12/2011 |
| 7960293 | Method for forming insulating film and method for manufacturing semiconductor device A method for forming an insulating film includes forming a silicon nitride film on a silicon surface by subjecting a target substrate wherein silicon is exposed in the surface to a treatment for nitriding the silicon, forming a silicon oxynitride film by heating the... | 06/14/2011 |
| 7897518 | Plasma processing method and computer storage medium According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply... | 03/01/2011 |
| 7781350 | Method and system for controllable deposition of nanoparticles on a substrate In a method and system for controllable electrostatic-directed deposition of nanoparticles from the gas phase on a substrate patterned to have p-n junction(s), a bias electrical field is reversely applied to the p-n junction, so that uni-polarly charged nanoparticle... | 08/24/2010 |
| 7723241 | Plasma processing method and computer storage medium According to the present invention, when a nitridation process by plasma generated by a microwave is applied to a substrate with an oxide film having been formed thereon to form an oxynitride film, the microwave is intermittently supplied. By the intermittent supply... | 05/25/2010 |
| 7589027 | Method of manufacturing semiconductor device Provided is a method of manufacturing a semiconductor device. A first gate oxide layer is formed on a semiconductor substrate in which a core region and an input/output region are defined. The first gate oxide layer of the core region is selectively removed, and a s... | 09/15/2009 |
| 7423312 | Apparatus and method for a memory array with shallow trench isolation regions between bit lines for increased process margins The present invention provides an apparatus and method for a non-volatile memory comprising at least one array of memory cells with shallow trench isolation (STI) regions between bit lines for increased process margins. Specifically, in one embodiment, each of the m... | 09/09/2008 |
| 7413966 | Method of fabricating polysilicon thin film transistor with catalyst A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provided. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface o... | 08/19/2008 |
| 7410899 | Defectivity and process control of electroless deposition in microelectronics applications Methods and compositions for electrolessly depositing Co, Ni, or alloys thereof onto a substrate in manufacture of microelectronic devices. Grain refiners, levelers, oxygen scavengers, and stabilizers for electroless Co and Ni deposition solutions. ... | 08/12/2008 |
| 7371647 | Methods of forming transistors The invention encompasses a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nit... | 05/13/2008 |
| 7348282 | Forming method of gate insulating layer and nitrogen density measuring method thereof A method of forming a gate insulating layer and nitrogen density measuring method thereof, by which a transistor having enhanced electric characteristics can be fabricated without employing separate ion implantation in a manner of providing parameters for enhancing ... | 03/25/2008 |
| 7349079 | Methods for measurement or analysis of a nitrogen concentration of a specimen A method for measurement of a specimen is provided. The method includes measuring spectroscopic ellipsometric data of the specimen. The method also includes determining a nitrogen concentration of a nitrided oxide gate dielectric formed on the specimen from the spec... | 03/25/2008 |
| 7345001 | Gate dielectric having a flat nitrogen profile and method of manufacture therefor The present invention provides a gate dielectric having a flat nitrogen profile, a method of manufacture therefor, and a method of manufacturing an integrated circuit including the flat nitrogen profile. In one embodiment, the method of manufacturing the gate dielec... | 03/18/2008 |
| 7335603 | System and method for fabricating logic devices comprising carbon nanotube transistors Carbon nanotube devices and methods for fabricating these devices, wherein in one embodiment, the fabrication process consists of the following process steps: (1) generation of a template, (2) catalyst deposition, and (3) nanotube synthesis within the template. In a... | 02/26/2008 |
| 7329609 | Substrate processing method and substrate processing apparatus In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive memb... | 02/12/2008 |
| 7294582 | Low temperature silicon compound deposition Sequential processes are conducted in a batch reaction chamber to form ultra high quality silicon-containing compound layers, e.g., silicon nitride layers, at low temperatures. Under reaction rate limited conditions, a silicon layer is deposited on a substrate using... | 11/13/2007 |
| 7291568 | Method for fabricating a nitrided silicon-oxide gate dielectric A method of fabricating a gate dielectric layer, including: providing a substrate; forming a silicon dioxide layer on a top surface of the substrate; performing a plasma nitridation in a reducing atmosphere to convert the silicon dioxide layer into a silicon oxynitr... | 11/06/2007 |
| 7279429 | Method to improve ignition in plasma etching or plasma deposition steps In one embodiment, the present invention relates to a method for increasing the ignition reliability of a plasma in a plasma reactor, the method comprising: supplying a source gas to the plasma reactor, the source gas comprising: (a) at least one reactive compound; ... | 10/09/2007 |
| 7262101 | Method of manufacturing a semiconductor integrated circuit device A method of manufacturing a semiconductor integrated circuit device comprising forming a silicon oxide film as thin as 5 nm or less on the surfaces of p type wells and n type wells by wet oxidizing a substrate, heating the substrate in an atmosphere containing about... | 08/28/2007 |
| 7250375 | Substrate processing method and material for electronic device A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of s... | 07/31/2007 |
| 7247582 | Deposition of tensile and compressive stressed materials A method of depositing tensile or compressively stressed silicon nitride on a substrate is described. Silicon nitride having a tensile stress with an absolute value of at least about 1200 MPa can be deposited from process gas comprising silicon-containing gas and ni... | 07/24/2007 |
| 7226874 | Substrate processing method A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-exci... | 06/05/2007 |
| 7220461 | Method and apparatus for forming silicon oxide film A method for forming a silicon oxide film includes disposing a silicon oxide film on a surface of a target substrate, and performing a reformation process on the silicon oxide film. The reformation process is performed by annealing the silicon oxide film while expos... | 05/22/2007 |
| 7214628 | Plasma gate oxidation process using pulsed RF source power A method of fabricating a gate of a transistor device on a semiconductor substrate, includes the steps of placing the substrate in a vacuum chamber of a plasma reactor and introducing into the chamber a process gas that includes oxygen while maintaining a vacuum pre... | 05/08/2007 |
| 7202186 | Method of forming uniform ultra-thin oxynitride layers Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride... | 04/10/2007 |
| 7202164 | Method of forming ultra thin silicon oxynitride for gate dielectric applications A method of forming a gate dielectric layer is disclosed. The method comprises the following steps. A substrate is provided having silicon regions containing surfaces upon which gate dielectrics are to be disposed. An oxide is formed over the surfaces. A silicon lay... | 04/10/2007 |
| 7192827 | Methods of forming capacitor structures The invention includes a method of forming a capacitor structure. A first electrical node is formed, and a layer of metallic aluminum is formed over the first electrical node. Subsequently, an entirety of the metallic aluminum within the layer is transformed into on... | 03/20/2007 |
| 7183143 | Method for forming nitrided tunnel oxide layer A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed to implant nitrogen atoms into the silicon oxide layer. A thermal dri... | 02/27/2007 |
| 7157339 | Method for fabricating semiconductor devices having dual gate oxide layers A method for forming a dual gate oxide layer, including the steps of: a) forming a gate oxide layer on a semiconductor substrate; and b) increasing a thickness of a part of the gate oxide layer by performing a decoupled plasma treatment. Additional heat processes ar... | 01/02/2007 |
| 7144825 | Multi-layer dielectric containing diffusion barrier material A method for forming a dielectric is disclosed. The method comprises forming a first dielectric layer over semiconductor material. A diffusion barrier material is introduced into the first dielectric layer. Lastly, a second dielectric layer is formed over the first ... | 12/05/2006 |
| 7144806 | ALD of tantalum using a hydride reducing agent An ALD method deposits conformal tantalum-containing material layers on small features of a substrate surface. The method includes the following principal operations: depositing a thin conformal and saturated layer of tantalum-containing precursor over some or all o... | 12/05/2006 |
| 7141514 | Selective plasma re-oxidation process using pulsed RF source power A transistor gate selective re-oxidation process includes the steps of introducing into the vacuum chamber containing the semiconductor substrate a process gas that includes oxygen while maintaining a vacuum pressure in the chamber. An oxide insulating layer on the ... | 11/28/2006 |
| 7129187 | Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate. The method includes providing a substrate in a process chamber, exciting a reactant gas in a remote plasma source, thereafter mixing the exci... | 10/31/2006 |
| 7109125 | Selective fabrication of high capacitance density areas in a low dielectric constant material Method for selective fabrication of high capacitance density areas in a low dielectric constant material and related structure are disclosed. In one embodiment, a first area of a dielectric layer is covered, for example with photoresist, while a second area of the d... | 09/19/2006 |
| 7101802 | Method for forming bottle-shaped trench The invention provides a method for forming a bottle-shaped trench. A semiconductor substrate having a trench and a pad stack layer formed thereon is provided. A masking layer is then formed in the lower portion of the trench. Plasma nitridation is then performed to... | 09/05/2006 |
| 7098147 | Semiconductor memory device and method for manufacturing semiconductor device After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a sil... | 08/29/2006 |
| 7098154 | Method for fabricating semiconductor device and semiconductor device Part of a first oxide film formed by thermal oxidation is removed by etching. A second oxide film is formed in the part of substrate from which the first oxide film has been removed using heated nitric acid. The two oxide films are nitrided by a nitrogen plasma havi... | 08/29/2006 |
| 7094641 | Method for forming wiring pattern, method for manufacturing semiconductor device, electro-optic device and electronic equipment A method is provided that is capable of forming a wiring pattern having an extremely flat surface and few convexo-concave shapes on a substrate on which the wiring pattern is formed. The method to form a wiring pattern includes a bank forming process, a conductive l... | 08/22/2006 |
| 7049246 | Method for selective fabrication of high capacitance density areas in a low dielectric constant material Method for selective fabrication of high capacitance density areas in a low dielectric constant material and related structure are disclosed. In one embodiment, a first area of a dielectric layer is covered while a second area of the dielectric layer is exposed to a... | 05/23/2006 |
