Quotables
"To place a man in a multi-stage rocket and project him into the controlling gravitational field of the moon where the passengers can make scientific observations, perhaps land alive, and then return to earth--all that constitutes a wild dream worthy of Jules Verne. I am bold enough to say that such a man-made voyage will never occur regardless of all future advances."
Lee deForest, American radio pioneer ; 1957
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| Number | Title | Issue Date |
| 8183164 | Method for preferential growth of semiconducting vertically aligned single walled carbon nanotubes A method and system for the preferential growth of semiconducting vertically-aligned single-walled carbon nanotubes (VA-SWNTs) is provided. The method combines the use of plasma-enhanced chemical vapor deposition at low pressure with rapid heating. The method provid... | 05/22/2012 |
| 8178446 | Strained metal nitride films and method of forming A method for forming a strained metal nitride film and a semiconductor device containing the strained metal nitride film. The method includes exposing a substrate to a gas containing a metal precursor, exposing the substrate to a gas containing a first nitrogen prec... | 05/15/2012 |
| 8105959 | Method for manufacturing a semiconductor device having a nitrogen-containing gate insulating film A method for manufacturing a semiconductor device includes the steps of: forming a SiO2 layer on a silicon substrate; forming on the SiO2 layer an SiN film having a N/Si composition ratio smaller than the stoichiometric composition ratio of SiN... | 01/31/2012 |
| 8053374 | Method of manufacturing a metal wiring structure In a method of manufacturing a metal wiring structure, a first metal wiring and a first barrier layer are formed on a substrate, and the first barrier layer is nitridated. An insulating interlayer is formed on the substrate so as to extend over the first metal wirin... | 11/08/2011 |
| 8008216 | Nitrogen profile in high-K dielectrics using ultrathin disposable capping layers Metal Oxide Semiconductor (MOS) transistors fabricated using current art may utilize a nitridation process on the gate dielectric to improve transistor reliability. Nitridation by the current art, which involves exposing the gate dielectric to a nitridation source, ... | 08/30/2011 |
| 7981809 | Film formation method and apparatus for semiconductor process A film formation method for a semiconductor process for forming a silicon oxynitride film on a target substrate within a reaction chamber includes a step of performing a pre-process on members inside the reaction chamber without the target substrate loaded therein, ... | 07/19/2011 |
| 7915179 | Insulating film forming method and substrate processing method In a method for forming an insulating film by performing plasma nitriding process to an oxide film on a substrate and then by annealing the substrate in a process chamber (51), the substrate is annealed under a low pressure of 667 Pa or lower. The annealing i... | 03/29/2011 |
| 7888272 | Methods for manufacturing memory and logic devices using the same process without the need for additional masks A semiconductor fabrication process allows the fabrication of both logic and memory devices using a conventional CMOS process with a few additional steps. The additional steps, however, do not require additional masks. Accordingly, the process can be reduce the comp... | 02/15/2011 |
| 7871939 | Method for manufacturing semiconductor device using a free radical assisted chemical vapor deposition nitrifying process A method for manufacturing a semiconductor device for use in avoiding unwanted oxidation along exposed surfaces and for use in relieving etching damage is presented. The method includes step of forming sequentially a gate insulation layer, a polysilicon layer, a bar... | 01/18/2011 |
| 7867917 | Etch stop layer for a metallization layer with enhanced adhesion, etch selectivity and hermeticity By providing a barrier layer stack including a thin SiCN layer for enhanced adhesion, a silicon nitride layer for confining a copper-based metal region (thereby also effectively avoiding any diffusion of oxygen and moisture into the copper region), and a SiCN layer,... | 01/11/2011 |
| 7820557 | Method for nitriding substrate and method for forming insulating film In a substrate nitriding method for nitriding a target substrate by allowing a nitrogen-containing plasma to act on silicon on a surface of the substrate in a processing chamber of a plasma processing apparatus, the nitridation by the nitrogen-containing plasma is p... | 10/26/2010 |
| 7816281 | Method for manufacturing a semiconductor device A method for manufacturing a semiconductor device includes the steps of forming a silicon oxide film on a silicon substrate, and forming a silicon nitride film on the silicon oxide film. The step of forming the silicon nitride film includes the steps of growing a fi... | 10/19/2010 |
| 7790627 | Semiconductor device, method of manufacturing the same, and method of manufacturing metal compound thin film A method of manufacturing a metal compound thin film is disclosed. The method may include forming a first metal compound layer on a substrate by atomic layer deposition, performing annealing on the first metal compound layer in an atmosphere containing a nitrogen co... | 09/07/2010 |
| 7776761 | Method of fabricating semiconductor device having multiple gate insulating layer A method of fabricating a semiconductor device is provided. The method includes preparing a semiconductor substrate having first and second regions, forming a mask layer pattern on the second region, growing an oxidation retarding layer on the first region and remov... | 08/17/2010 |
| 7772129 | Method for manufacturing a semiconductor device It is made possible to restrain generation of defects at the time of insulating film formation. A method for manufacturing a semiconductor device, includes: placing a semiconductor substrate into an atmosphere, thereby forming a nitride film on a surface of the semi... | 08/10/2010 |
| 7759260 | Selective nitridation of gate oxides A method of fabricating a semiconductor structure. The method includes forming a first feature of a first active device and a second feature of a second active device, introducing a first amount of nitrogen into the first feature of the first active device, and intr... | 07/20/2010 |
| 7749919 | Semiconductor device and method for manufacturing the same A semiconductor device includes: a semiconductor substrate; a source region and a drain region formed at a distance from each other in the semiconductor substrate; a first insulating film formed on a portion of the semiconductor substrate, the portion being located ... | 07/06/2010 |
| 7718548 | Selective copper-silicon-nitride layer formation for an improved dielectric film/copper line interface A process to form a copper-silicon-nitride layer on a copper surface on a semiconductor wafer is described. The process may include the step of exposing the wafer to a first plasma made from helium. The process may also include exposing the wafer to a second plasma ... | 05/18/2010 |
| 7682988 | Thermal treatment of nitrided oxide to improve negative bias thermal instability A method of reducing threshold voltage shift of a MOSFET transistor resulting after temperature and voltage stress, and an integrated circuit device fabricated according to the method. The method includes the steps of forming a nitrided dielectric layer on a semicon... | 03/23/2010 |
| 7659214 | Method for growing an oxynitride film on a substrate A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a first wet process gas comprising water vapor into the process chamber, and reacting the substrate with the first we... | 02/09/2010 |
| 7615500 | Method for depositing film and method for manufacturing semiconductor device A method for depositing a film includes: (a) processing a wafer, including forming a high dielectric constant film on a first wafer; and achieving nitridation of the high dielectric constant film formed on the first wafer; and (b) performing coating process includin... | 11/10/2009 |
| 7560394 | Nanodots formed on silicon oxide and method of manufacturing the same A nanodot material including nanodots formed on silicon oxide, and a method of manufacturing the same, is provided. The nanodot material includes a substrate, a silicon oxide layer, and a plurality of nanodots on the silicon oxide layer. ... | 07/14/2009 |
| 7547646 | Trench capacitor structure and process for applying a covering layer and a mask for trench etching processes in semiconductor substrates A stress relief layer between a single-crystal semiconductor substrate and a deposited silicon nitride layer or pad nitride is formed from thermally produced silicon nitride. The stress relief layer made from thermally produced silicon nitride replaces a silicon dio... | 06/16/2009 |
| 7524774 | Manufacturing method of semiconductor device, semiconductor manufacturing apparatus, plasma nitridation method, computer recording medium, and program An object of the present invention is to prevent an increase in film thickness and inhibit a reduction in capacity of a capacitor. In a semiconductor device having a capacitor, the capacitor includes a lower electrode, an upper electrode, and an insulating film inte... | 04/28/2009 |
| 7514373 | Method and apparatus for plasma nitridation of gate dielectrics using amplitude modulated radio-frequency energy A method and apparatus for forming a nitrided gate dielectric layer. The method includes generating a nitrogen-containing plasma in a processing chamber via a smooth-varying modulated RF power source to reduce electron temperature spike. Field effect transistor chan... | 04/07/2009 |
| 7498271 | Nitrogen based plasma process for metal gate MOS device The present invention, in one embodiment, provides a method of forming a gate structure including providing a substrate including a semiconducting device region, a high-k dielectric material present atop the semiconducting device region, and a metal gate conductor a... | 03/03/2009 |
| 7491652 | In-line processing for forming a silicon nitride film A process for manufacturing semiconductor devices in an in-line processing includes the steps of: forming a silicon nitride film on a semiconductor wafer by nitrization in a reactor chamber having an inner pressure at a specific pressure; reducing the inner pressure... | 02/17/2009 |
| 7456115 | Method for forming semiconductor devices having reduced gate edge leakage current The present invention provides methods for forming semiconductor FET devices having reduced gate edge leakage current by using plasma or thermal nitridation and low-temperature plasma re-oxidation processes post gate etch. ... | 11/25/2008 |
| 7442653 | Inter-metal dielectric of semiconductor device and manufacturing method thereof including plasma treating a plasma enhanced fluorosilicate glass An exemplary manufacturing method of an inter-metal dielectric of a semiconductor device according to an embodiment of the present invention includes forming a first silicon-rich oxide (SRO) layer on a silicon substrate provided with or otherwise having a copper lin... | 10/28/2008 |
| 7439192 | Method of forming a layer on a semiconductor substrate In a method of forming a thin layer for a semiconductor device through an ALD process and a CVD process in the same chamber, a semiconductor substrate is introduced into a processing chamber, and an interval between a showerhead and the substrate is adjusted to a fi... | 10/21/2008 |
| 7432217 | Method of achieving uniform length of carbon nanotubes (CNTS) and method of manufacturing field emission device (FED) using such CNTS In a method of achieving uniform lengths of Carbon NanoTubes (CNTs) and a method of manufacturing a Field Emission Device (FED) using such CNTs, an organic film is coated to cover CNTs formed on a predetermined material layer. The organic film is etched to a predete... | 10/07/2008 |
| 7429538 | Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric A method of forming a silicon oxynitride gate dielectric. The method includes incorporating nitrogen into a dielectric film using a plasma nitridation process to form a silicon oxynitride film. The silicon oxynitride film is annealed in a first ambient. The first am... | 09/30/2008 |
| 7429540 | Silicon oxynitride gate dielectric formation using multiple annealing steps A method for processing a semiconductor substrate in a chamber includes forming a silicon oxynitride film using a two-step anneal process. The first anneal step includes annealing the silicon oxynitride film in the presence of an oxidizing gas that has a partial pre... | 09/30/2008 |
| 7427572 | Method and apparatus for forming silicon nitride film A method for forming a silicon nitride film first deposits a silicon nitride film on a target substrate by CVD in a process field within a reaction container. This step is arranged to supply a first process gas containing a silane family gas and a second process gas... | 09/23/2008 |
| 7419918 | Methods of forming a thin-film structure, methods of manufacturing non-volatile semiconductor devices using the same, and resulting non-volatile semiconductor devices In a method of forming a thin-film structure employed in a non-volatile semiconductor device, an oxide film is formed on a substrate. An upper nitride film is formed on the oxide film by nitrifying an upper portion of the oxide film through a plasma nitration proces... | 09/02/2008 |
| 7420202 | Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example, the transistor structure may be a p-channel transistor structure and... | 09/02/2008 |
| 7413966 | Method of fabricating polysilicon thin film transistor with catalyst A method of forming a polycrystalline silicon active layer for use in a thin film transistor is provided. The method includes forming a buffer layer over a substrate, forming an amorphous silicon layer over the buffer layer, applying a catalytic metal to a surface o... | 08/19/2008 |
| 7405125 | Tunnel oxynitride in flash memories Methods for forming a tunnel oxide structure device and methods for forming the structure are described. A structure comprising nitrogen is formed on a semiconductor substrate. The structure is oxidized. Nitrogen of the oxide structure is redistributed to form a reg... | 07/29/2008 |
| 7402472 | Method of making a nitrided gate dielectric A gate dielectric is treated with a nitridation step and an anneal. After this, an additional nitridation step and anneal is performed. The second nitridation and anneal results in an improvement in the relationship between gate leakage current density and current d... | 07/22/2008 |
| 7399714 | Method of forming a structure over a semiconductor substrate The invention includes a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nitrog... | 07/15/2008 |
