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| Number | Title | Issue Date |
| 7884031 | Semiconductor device The semiconductor device includes an interconnect having a width of 0.1 μm or less and formed in an insulating layer constituted of a low relative dielectric constant film having a relative dielectric constant of 3.0 or lower, a via having a diameter of 0.1 μm or ... | 02/08/2011 |
| 7662727 | Method for manufacturing semiconductor device background To improve a step coverage and a loading effect, without inviting a deterioration of throughput and an increase of cost, in a method for forming a thin film by alternately flowing a raw material and alcohol to a processing chamber. The method includes: loading a sil... | 02/16/2010 |
| 7531464 | Semiconductive device fabricated using a substantially disassociated chlorohydrocarbon The invention provides a method of fabricating a semiconductive device. In one aspect, the method comprises heating a gas mixture [225] comprising chlorohydrocarbon having a general formula of CxHxClx, wherein x=2, 3, or 4. Th... | 05/12/2009 |
| 7358171 | Method to chemically remove metal impurities from polycide gate sidewalls An embodiment includes a process of forming a gate stack that acts to resist the redeposition to the semiconductive substrate of mobilized metal such as from a metal gate electrode. An embodiment also relates to a system that achieves the process. An embodiment also... | 04/15/2008 |
| 7339251 | Shallow trench isolation structure and formation method thereof A method for fabricating an STI structure in a semiconductor device is disclosed. A disclosed method comprises: forming a pad oxide layer and a pad nitride layer on a substrate in sequence; patterning the pad oxide layer and the pad nitride layer to expose a predete... | 03/04/2008 |
| 7335570 | Method of forming insulating films, capacitances, and semiconductor devices Insulating metal oxide or nitride films are deposited by RF magnetron sputtering. During sputtering, the atmospheric gas comprises an oxygen or nitride compound gas and an inert gas. The proportion of the inert gas is decreased to 25 atom % or lower. By this sputter... | 02/26/2008 |
| 7326655 | Method of forming an oxide layer A method for forming an oxide layer on a substrate. The method includes exposing a process gas containing H2, an oxygen-containing gas, and a halogen-containing oxidation accelerant gas to the substrate, where the process chamber is maintained at a subatm... | 02/05/2008 |
| 7304002 | Method of oxidizing member to be treated A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidatio... | 12/04/2007 |
| 7300829 | Low temperature process for TFT fabrication Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subject... | 11/27/2007 |
| 7256143 | Semiconductor device having self-aligned contact plug and method for fabricating the same Provided are a semiconductor device having a self-aligned contact plug and a method of fabricating the semiconductor device. The semiconductor device includes conductive patterns, a first interlayer insulating layer, a first spacer, a second interlayer insulating la... | 08/14/2007 |
| 7235498 | Process for growing a dielectric layer on a silicon-containing surface using a mixture of NO and O This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance gr... | 06/26/2007 |
| 7211295 | Silicon dioxide film forming method Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a proce... | 05/01/2007 |
| 7196021 | HDP-CVD deposition process for filling high aspect ratio gaps A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing sou... | 03/27/2007 |
| 7192887 | Semiconductor device with nitrogen in oxide film on semiconductor substrate and method of manufacturing the same A method of manufacturing a MOS transistor is provided that achieves high-speed devices by reducing nitrogen diffusion to a silicon substrate interface due to redistribution of nitrogen and further suppressing its diffusion to a polysilicon interface, which prevents... | 03/20/2007 |
| 7183143 | Method for forming nitrided tunnel oxide layer A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed to implant nitrogen atoms into the silicon oxide layer. A thermal dri... | 02/27/2007 |
| 7179726 | Laser processing apparatus and laser processing process A laser processing process which comprises laser annealing a silicon film 2 μm or less in thickness by irradiating a laser beam 400 nm or less in wavelength and being operated in pulsed mode with a pulse width of 50 nsec or more, and preferably, 100 nsec or more. | 02/20/2007 |
| 7169714 | Method and structure for graded gate oxides on vertical and non-planar surfaces A method for forming an oxide layer on a vertical, non-planar semiconductor surface provides a low stress oxide layer having a pristine interface characterized by a roughness of less than 3 angstroms. The oxide layer includes a portion that is substantially amorphou... | 01/30/2007 |
| 7148103 | Multilevel poly-Si tiling for semiconductor circuit manufacture Method of manufacturing a semiconductor device, including a first baseline technology electronic circuit (1) and a second option technology electronic circuit (2) as functional parts of a system-on-chip, by: manufacturing the first electro... | 12/12/2006 |
| 7148153 | Process for oxide fabrication using oxidation steps below and above a threshold temperature A process for forming an oxide layer includes forming a first oxide portion over a substrate at a temperature below a threshold temperature. A second oxide portion is formed under the first oxide portion at a temperature above the threshold temperature. The substrat... | 12/12/2006 |
| 7132362 | Semiconductor device with contacts having uniform contact resistance and method for manufacturing the same A semiconductor device having a contact hole capable of maintaining contact resistance of a contact connecting multi-layered interconnections with each other and a method for manufacturing the same are provided. An interconnection layer, a capping layer, and an etch... | 11/07/2006 |
| 7129187 | Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate. The method includes providing a substrate in a process chamber, exciting a reactant gas in a remote plasma source, thereafter mixing the exci... | 10/31/2006 |
| 7119033 | Ion-assisted oxidation methods and the resulting structures Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over d... | 10/10/2006 |
| 7087518 | Method of passivating and/or removing contaminants on a low-k dielectric/copper surface One aspect of the invention relates to a method of removing contaminants from a low-k film. The method involves forming a sacrificial layer over the contaminated film. The contaminants combine with the sacrificial layer and are removed by etching away the sacrificia... | 08/08/2006 |
| 7087536 | Silicon oxide gapfill deposition using liquid precursors A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is vaporized. A flow of the vaporized liquid Si—C—O—H precursor is p... | 08/08/2006 |
| 7081418 | Method of fabricating a multi-layered thin film by using photolysis chemical vapor deposition A method of forming a multi-layered thin film uses photolysis chemical vapor deposition (PCVD). In the method, a substrate for a process of forming the multi-layered thin film is prepared. At least two source gases are supplied to the substrate. Reaction lights havi... | 07/25/2006 |
| 6991987 | Method for producing a low defect homogeneous oxynitride A process technology effectuates production of low defect homogeneous oxynitride, which can be applied in tunneling dielectrics with high dielectric constants and low barrier heights for flash memory devices, and as gate oxide for ultra-thin logic devices. The proce... | 01/31/2006 |
| 6992370 | Memory cell structure having nitride layer with reduced charge loss and method for fabricating same According to one embodiment, a memory cell structure comprises a semiconductor substrate, a first silicon oxide layer situated over the semiconductor substrate, a charge storing layer situated over the first silicon oxide layer, a second silicon oxide layer situated... | 01/31/2006 |
| 6972223 | Use of atomic oxygen process for improved barrier layer A composite barrier layer formed between a glass film and active regions of a memory device is disclosed. The composite barrier layer comprises an oxide layer formed by atomic deposition process and an insulating layer, for example a nitride barrier layer, formed ov... | 12/06/2005 |
| 6960812 | Method of forming an oxide film A method of forming an oxide film and a method of manufacturing an electronic device utilizing the oxide film is disclosed. A silicon oxide film is formed on a substrate by sputtering. Therefore, the film formation is carried out at a low temperature. The sputtering... | 11/01/2005 |
| 6949478 | Oxide film forming method A method of forming an oxide film having high insularity capability is performed within an ultra clean environment, using charged particles. ... | 09/27/2005 |
| 6939749 | Method of manufacturing a semiconductor device that includes heating the gate insulating film A process for fabricating a thin film transistor, which comprises crystallizing an amorphous silicon film, forming thereon a gate insulating film and a gate electrode, implanting impurities in a self-aligned manner, adhering a coating containing a catalyst element w... | 09/06/2005 |
| 6933248 | Method for transistor gate dielectric layer with uniform nitrogen concentration The instant invention describes a method for forming a dielectric film with a uniform concentration of nitrogen. The films are formed by first incorporating nitrogen into a dielectric film using RPNO. The films are then annealed in N2O which redistributes... | 08/23/2005 |
| 6933235 | Method for removing contaminants on a substrate A method of processing a substrate is disclosed. The method includes depositing a dielectric layer having a metal oxide on a substrate. A portion of the dielectric layer is removed to form a dielectric structure, thereby exposing a surface of the substrate. For exam... | 08/23/2005 |
| 6927121 | Method for manufacturing ferroelectric random access memory capacitor A method for manufacturing an FeRAM capacitor is employed to enhance an adhesive property between a dielectric layer and a first bottom electrode of iridium. The method including the steps of: preparing an active matrix including a semiconductor substrate, a transis... | 08/09/2005 |
| 6914016 | HDP-CVD deposition process for filling high aspect ratio gaps A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing sou... | 07/05/2005 |
| 6887797 | Apparatus and method for forming an oxynitride insulating layer on a semiconductor wafer An apparatus and method of forming an oxynitride insulating layer on a substrate performed by putting the substrate at a first temperature within the main chamber of a furnace, exposing the substrate to a nitrogen containing gas at a second temperature which is high... | 05/03/2005 |
| 6864125 | Process for growing a dielectric layer on a silicon-containing surface using a mixture of N2O and O3 This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance gr... | 03/08/2005 |
| RE38674 | Process for forming a thin oxide layer A novel process for forming a robust, sub-100 Å oxide is disclosed. Native oxide growth is tightly controlled by flowing pure nitrogen during wafer push and nitrogen with a small amount of oxygen during temperature ramp and stabilization. First, a dry oxidation is... | 12/21/2004 |
| 6808993 | Ultra-thin gate dielectrics An in-situ ultra dilute ammonia nitridation process and apparatus of the following ultra-thin chemically tailored gate dielectrics: DCE/O2 (Trans 1,2-Dichloroethylene) based ultra-thin gate dielectric; Nitric Oxide (NO) based ultra-thin gate dielectric th... | 10/26/2004 |
| 6770538 | Ion-assisted oxidation methods and the resulting structures Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over d... | 08/03/2004 |
