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| Number | Title | Issue Date |
| 8026184 | Semiconductor device and method of manufacturing the same Disclosed is a method of manufacturing a semiconductor device formed by laminating a capacitor including a bottom metal electrode, a capacitive insulating film, and an upper metal electrode. When the capacitive insulating film is formed by performing a first step of... | 09/27/2011 |
| 8021989 | Method for high topography patterning One inventive aspect is related to a method for isolating structures of a semiconductor material, comprising providing a pattern of the semiconductor material comprising at least one elevated line, defining device regions in the pattern, the device regions each comp... | 09/20/2011 |
| 7989359 | Semiconductor module manufacturing method, semiconductor module, and mobile device A semiconductor substrate having on its surface an electrode of a semiconductor device and a pattern unit is prepared. A copper plate is formed provided with a first principle surface having a bump and a second principle surface, opposite to the first principle surf... | 08/02/2011 |
| 7951728 | Method of improving oxide growth rate of selective oxidation processes A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydr... | 05/31/2011 |
| 7851383 | Method and system for forming a controllable gate oxide Method and system for forming gate structure with controllable oxide. The method includes a step for providing a semiconductor substrate and defining a source region and a drain region within the semiconductor substrate. Furthermore, the method includes a step for d... | 12/14/2010 |
| 7795159 | Charge trap layer for a charge trap semiconductor memory device and method of manufacturing the same Provided are a charge trap semiconductor memory device including a charge trap layer on a semiconductor substrate, and a method of manufacturing the charge trap semiconductor memory device. The method includes: (a) coating a first precursor material on a surface of ... | 09/14/2010 |
| 7674724 | Oxidizing method and oxidizing unit for object to be processed An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermin... | 03/09/2010 |
| 7442655 | Selective oxidation methods and transistor fabrication methods The invention includes selective oxidation methods and transistor fabrication methods. In one implementation, a selective oxidation method includes positioning a substrate within a chamber. The substrate has first and second different oxidizable materials. The subst... | 10/28/2008 |
| 7435690 | Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy Method of preparing a silicon dioxide layer by high-temperature oxidation on a substrate of formula Si1-xGex in which x is greater than 0 and less than or equal to 1, the said method comprising the following successive steps: ... | 10/14/2008 |
| 7429514 | Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device A sidewall oxidation process for use during the formation of a transistor such as a flash memory cell allows for improved control of a gate oxide profile. The method comprises doping transistor source and drain regions to different doping levels, then performing a t... | 09/30/2008 |
| 7410912 | Methods of manufacturing metal oxide nanowires Metal oxide nanowires are being investigated to make nanodevices and nanosensors. High operation temperatures or vacuum is required in the manufacturing of metal oxide nanowires by existing vapor phase evaporation methods. This invention provides a method of manufac... | 08/12/2008 |
| 7371697 | Ion-assisted oxidation methods and the resulting structures Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over d... | 05/13/2008 |
| 7368342 | Semiconductor device and method of manufacturing the same A method for manufacturing a semiconductor device includes forming a gate-insulating film on a semiconductor substrate; forming a gate electrode on the gate-insulating film to be electrically insulated from the semiconductor substrate; etching the gate electrode, th... | 05/06/2008 |
| 7368400 | Method for forming oxide film in semiconductor device The present invention relates to a method for forming an oxide film in semiconductor devices. According to the present invention, after an oxide film is formed, interface trap charge and oxide trap charge can be reduced through a high-temperature thermal treatment p... | 05/06/2008 |
| 7351656 | Semiconductor device having oxidized metal film and manufacture method of the same A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in ... | 04/01/2008 |
| 7340710 | Integrated circuit binning and layout design system A method for binning and layout of an integrated circuit design which includes providing a table setting forth predefined widths of signal wires and corresponding spacing to shield wires, characterizing effects on timing, noise, and power distribution based on prede... | 03/04/2008 |
| 7338869 | Semiconductor device and its manufacturing method A semiconductor device and a method of manufacturing the device using a (000-1)-faced silicon carbide substrate are provided. A SiC semiconductor device having a high voltage resistancehigh blocking voltage and high channel mobility is manufactured by optimizing the... | 03/04/2008 |
| RE40113 | Method for fabricating gate oxide A method for fabricating gate oxide includes a dilute wet oxidation process with additional nitrogen and moisture and an annealing process with a nitrogen base gas, wherein the volume of additional nitrogen is about 6-12 6-20 times of the volume of the additional m... | 02/26/2008 |
| 7326655 | Method of forming an oxide layer A method for forming an oxide layer on a substrate. The method includes exposing a process gas containing H2, an oxygen-containing gas, and a halogen-containing oxidation accelerant gas to the substrate, where the process chamber is maintained at a subatm... | 02/05/2008 |
| 7319066 | Semiconductor device and method for fabricating the same The semiconductor device comprises a silicon wafer 10, a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10, and a silicon nitride film 16b which is formed on the... | 01/15/2008 |
| 7312139 | Method of fabricating nitrogen-containing gate dielectric layer and semiconductor device A method of fabricating a nitrogen-containing gate dielectric layer is described. First, a gate dielectric layer is formed on a substrate by performing a dilute wet oxidation process. Then, a nitridation step is performed for doping nitrogen into the gate dielectric... | 12/25/2007 |
| 7304003 | Oxidizing method and oxidizing unit for object to be processed An oxidizing method for an object to be processed according to the present invention includes: an arranging step of arranging a plurality of objects to be processed in a processing container whose inside can be vacuumed, the processing container having a predetermin... | 12/04/2007 |
| 7300833 | Process for producing semiconductor integrated circuit device When an oxidation treatment for regenerating a gate insulating film 6 is performed after forming gate electrodes 7A of a polymetal structure in which a WNx film and a W film are stacked on a polysilicon film, a wafer 1 is heated and c... | 11/27/2007 |
| 7282158 | Method of processing a workpiece This invention relates to a method of processing a workpiece in a chamber. Initially a surface of the workpiece is treated by a process which includes supplying a reactive gas to the chamber through a first gas supply and the surface is then further treated using a ... | 10/16/2007 |
| 7276403 | Selective oxidation of silicon in diode, TFT, and monolithic three dimensional memory arrays The present invention relates to use of selective oxidation to oxidize silicon in the presence of tungsten and/or tungsten nitride in memory cells and memory arrays. This technique is especially useful in monolithic three dimensional memory arrays. In one aspect of ... | 10/02/2007 |
| 7273819 | Method and apparatus for processing semiconductor substrates Substrates in a reaction chamber are sequentially exposed to at least three gas atmospheres: a first atmosphere of a first purge gas, a second atmosphere of a process gas and a third atmosphere of a second purge gas. The gases are introduced into the reaction chambe... | 09/25/2007 |
| 7268090 | Method of manufacturing flash memory device A method of manufacturing flash memory devices, comprises the steps of forming an oxide film on a semiconductor substrate, performing a pre-annealing process under N2 gas atmosphere, nitrifying the oxide film by performing a main annealing process under N... | 09/11/2007 |
| 7268205 | Medical devices and applications of polyhydroxyalkanoate polymers Devices formed of or including biocompatible polyhydroxyalkanoates are provided with controlled degradation rates, preferably less than one year under physiological conditions. Preferred devices include sutures, suture fasteners, meniscus repair devices, rivets, tac... | 09/11/2007 |
| 7258845 | Apparatus and reactor for generating and feeding high purity moisture A safe, reduced pressure apparatus for generating water vapor from hydrogen and oxygen and feeding high purity moisture to processes such as semiconductor production. The apparatus eliminates the possibility of the gas igniting by maintaining the internal pressure o... | 08/21/2007 |
| 7256143 | Semiconductor device having self-aligned contact plug and method for fabricating the same Provided are a semiconductor device having a self-aligned contact plug and a method of fabricating the semiconductor device. The semiconductor device includes conductive patterns, a first interlayer insulating layer, a first spacer, a second interlayer insulating la... | 08/14/2007 |
| 7250376 | Method for fabricating semiconductor integrated circuit device A method for fabricating a semiconductor integrated circuit device of the invention comprises feeding oxidation species containing a low concentration of water, which is generated from hydrogen and oxygen by the catalytic action, to the main surface of or in the vic... | 07/31/2007 |
| 7247534 | Silicon device on Si:C-OI and SGOI and method of manufacture A semiconductor structure and method of manufacturing is provided. The method of manufacturing includes forming shallow trench isolation (STI) in a substrate and providing a first material and a second material on the substrate. The first material and the second mat... | 07/24/2007 |
| 7235497 | Selective oxidation methods and transistor fabrication methods The invention includes selective oxidation methods and transistor fabrication methods. In one implementation, a selective oxidation method includes positioning a substrate within a chamber. The substrate has first and second different oxidizable materials. The subst... | 06/26/2007 |
| 7235498 | Process for growing a dielectric layer on a silicon-containing surface using a mixture of NO and O This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance gr... | 06/26/2007 |
| 7221010 | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) may include an n-type silicon carbide drift layer, a first p-type silicon carbide region adjacent the drift layer and having a first n-type silicon carbide region therein, an oxide layer on... | 05/22/2007 |
| 7211523 | Method for forming field oxide A method for forming a field oxide is disclosed. In one embodiment, the method comprises providing a semiconductor structure having a substrate, a pad oxide, and a patterned barrier layer, performing a dry oxidation process to form a first field oxide on the substra... | 05/01/2007 |
| 7211295 | Silicon dioxide film forming method Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a proce... | 05/01/2007 |
| 7199022 | Manufacturing method of semiconductor device In order to achieve an isolation trench formation process according to the present invention in which the structure of a silicon nitride film liner can be easily controlled and to allow both of reduction of the device feature length and reduction in stress occurring... | 04/03/2007 |
| 7189662 | Methods of forming semiconductor constructions The invention includes methods of forming and/or passivating semiconductor constructions. In particular aspects, various oxides of a semiconductor substrate can be formed by exposing semiconductive material of the substrate to deuterium-enriched steam. In other aspe... | 03/13/2007 |
| 7186632 | Method of fabricating a semiconductor device having a decreased concentration of phosphorus impurities in polysilicon In a method for manufacturing a semiconductor device having a laminated gate electrode, a phosphorus-doped polysilicon is formed on a gate oxide film. A high-melting metal or a compound of a high-melting metal and silicon is formed on the polysilicon. Phosphorus is ... | 03/06/2007 |
