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| Number | Title | Issue Date |
| 8105958 | Semiconductor device manufacturing method and plasma oxidation treatment method A selective oxidation process is performed on a gate electrode in a plasma processing apparatus 100. A wafer W with the gate electrode formed thereon is placed on a susceptor 2 within a chamber 1. Ar gas, H2 gas, and O2 gas... | 01/31/2012 |
| 8043979 | Plasma oxidizing method, storage medium, and plasma processing apparatus A plasma oxidizing method in which a plasma is produced in a processing chamber of a plasma processing apparatus under a processing condition that the proportion of oxygen in the processing gas is 20% or more and the processing pressure is 400 to 1333 Pa, and silico... | 10/25/2011 |
| 7972973 | Method for forming silicon oxide film, plasma processing apparatus and storage medium The present invention provides a method for forming a silicon oxide film, with a substantially uniform film thickness and without being so influenced by dense sites and scattered sites in a pattern provided on an object to be processed, while keeping advantageous po... | 07/05/2011 |
| 7910495 | Plasma oxidizing method, plasma processing apparatus, and storage medium A plasma oxidizing method includes a step of placing an object to be processed and having a surface containing silicon on a susceptor disposed in a processing vessel of a plasma processing apparatus, a step of producing a plasma from a processing gas containing oxyg... | 03/22/2011 |
| 7906440 | Semiconductor device manufacturing method and plasma oxidation method A semiconductor device manufacturing method includes forming a gate insulating film on a semiconductor substrate; forming, on the gate insulating film, a multilayered structure including at least a polysilicon layer and a metal layer containing a refractory metal; f... | 03/15/2011 |
| 7855153 | Method for manufacturing semiconductor device A method for manufacturing an insulating film, which is used as an insulating film used for a semiconductor integrated circuit, whose reliability can be ensured even though it has small thickness, is provided. In particular, a method for manufacturing a high-quality... | 12/21/2010 |
| 7718547 | Semiconductor device and method for manufacturing the same A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting... | 05/18/2010 |
| 7465677 | Semiconductor device and method for manufacturing the same A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting... | 12/16/2008 |
| 7238629 | Deposition method, method of manufacturing semiconductor device, and semiconductor device The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic... | 07/03/2007 |
| 7232772 | Substrate processing method A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a plan... | 06/19/2007 |
| 7226874 | Substrate processing method A substrate processing method forming an oxynitride film by nitriding an oxide film formed on a silicon substrate includes a nitridation processing step that nitrides a surface of the oxide film by radicals or ions formed by exciting a nitrogen gas by microwave-exci... | 06/05/2007 |
| 7199022 | Manufacturing method of semiconductor device In order to achieve an isolation trench formation process according to the present invention in which the structure of a silicon nitride film liner can be easily controlled and to allow both of reduction of the device feature length and reduction in stress occurring... | 04/03/2007 |
| 7183143 | Method for forming nitrided tunnel oxide layer A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed to implant nitrogen atoms into the silicon oxide layer. A thermal dri... | 02/27/2007 |
| 7135369 | Atomic layer deposited ZrAlO dielectric layers including ZrAlO An atomic layer deposited ZrAlxOy dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a zirconium-c... | 11/14/2006 |
| 7129187 | Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate. The method includes providing a substrate in a process chamber, exciting a reactant gas in a remote plasma source, thereafter mixing the exci... | 10/31/2006 |
| 7125754 | Semiconductor device and its manufacturing method The present invention has an object of providing a thyristor-type semiconductor device and a manufacturing method for the same which can prevent, even when conventional manufacturing equipment is used, the electrode terminals 13, 14 from being provided in a s... | 10/24/2006 |
| 7122454 | Method for improving nitrogen profile in plasma nitrided gate dielectric layers A method is provided wherein a gate dielectric film that is plasma nitrided in a chamber of one system is subsequently heated or “annealed” in another chamber of the same system. Processing delay can be controlled so that all wafers processed in the system exper... | 10/17/2006 |
| 7122488 | High density plasma process for the formation of silicon dioxide on silicon carbide substrates Methods are provided for forming silicon dioxide (SiO2) on a silicon carbide (SiC) substrate. The method comprises: providing a SiC substrate; supplying an atmosphere including oxygen; performing a high-density (HD) plasma-based process; and, forming a SiO2 layer ov... | 10/17/2006 |
| 7115530 | Top surface roughness reduction of high-k dielectric materials using plasma based processes A system and method for manufacturing semiconductor devices with dielectric layers having a dielectric constant greater than silicon dioxide includes depositing a dielectric layer on a substrate and subjecting the dielectric layer to a plasma to reduce top surface r... | 10/03/2006 |
| 7098147 | Semiconductor memory device and method for manufacturing semiconductor device After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a sil... | 08/29/2006 |
| 7087271 | Method for preparing low dielectric films A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by bringing an organosilicon or organosilicate compound having at least one vinyl or ethynyl group, or a mixture of a saturated organosilicon or organosilicate compound and an unsatu... | 08/08/2006 |
| 7037861 | Method and apparatus for oxidizing nitrides A method for oxidizing a nitride film is disclosed, which includes the steps of: providing a nitride film formed on an electrically conductive substrate; irradiating the nitride film with a light beam and getting close to the nitride film with a electrically conduct... | 05/02/2006 |
| 6987056 | Method of forming gates in semiconductor devices Disclosed is the method of forming the gate in the semiconductor device. The present method can prevent abnormal oxidization and lifting at the interface of the stack gate consisting of polysilicon and a metal and can be applied to even the single metal gate, by rep... | 01/17/2006 |
| 6967130 | Method of forming dual gate insulator layers for CMOS applications A method of forming dual gate insulator layers, each with a specific insulator thickness, featuring a HF type pre-clean procedure performed prior to formation of each of the gate insulator layers, has been developed. After a first HF type pre-clean procedure a silic... | 11/22/2005 |
| 6927121 | Method for manufacturing ferroelectric random access memory capacitor A method for manufacturing an FeRAM capacitor is employed to enhance an adhesive property between a dielectric layer and a first bottom electrode of iridium. The method including the steps of: preparing an active matrix including a semiconductor substrate, a transis... | 08/09/2005 |
| 6777346 | Planarization using plasma oxidized amorphous silicon A planarization process for filling spaces between patterned metal features formed over a surface of a semiconductor substrate. The patterned metal features are preferably coated with a dielectric barrier. The dielectric barrier is coated with an material that expan... | 08/17/2004 |
| 6713383 | Semiconductor device manufacturing method A surface of a copper (Cu) wiring layer formed over a semiconductor substrate is exposed to a plasma gas selected from the group consisting of an ammonia gas, a mixed gas of nitrogen and hydrogen, a CF4 gas, a C2F6 gas and a NF3... | 03/30/2004 |
| 6689675 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, oxidizing the surface of the high-k gate dielectric layer, and then forming a gate electrode on the oxidized high-k gate ... | 02/10/2004 |
| 6551947 | Method of forming a high quality gate oxide at low temperatures A method of low-temperature oxidation of a silicon substrate includes placing a silicon wafer in a vacuum chamber; maintaining the silicon wafer at a temperature of between about room temperature and 350° C.; introducing an oxidation gas in the vacuum ch... | 04/22/2003 |
| 6534421 | Method to fabricate thin insulating film The invention grows SiO2 films over silicon at temperatures as low as room temperature and at pressures as high as 1 atmosphere. The lower temperature oxidation is made possible by creation of oxygen atoms and radicals by adding noble gas(es) a... | 03/18/2003 |
| 6500735 | Semiconductor device and method of manufacturing the same There is disclosed a method of manufacturing a semiconductor device, wherein a semiconductor layer having an acute projection containing polycrystalline silicon is formed on a substrate, and then, an insulating layer is formed on the semiconductor layer t... | 12/31/2002 |
| 6498082 | Method of forming a polysilicon layer A method of forming a polysilicon layer includes the steps of: loading a semiconductor substrate in a CVD reactor wherein a gate insulating layer is formed on the substrate; decompressing the reactor; depositing a first polysilicon layer on the substrate ... | 12/24/2002 |
| 6417115 | Treatment of dielectric materials A method of treating a dielectric material deposited on a substrate in semiconductor device manufacturing processes. The dielectric material is exposed to radiation. The dielectric material is exposed to a temperature of 20° C. or greater. The dielectric... | 07/09/2002 |
| 6376276 | Method of preparing diamond semiconductor There is provided a method of reliably preparing a diamond semiconductor by irradiating diamond with a corpuscular ray. In this method, when a diamond substrate is irradiated with a corpuscular ray, the diamond substrate is maintained at a temperature of ... | 04/23/2002 |
| 6331494 | Deposition of low dielectric constant thin film without use of an oxidizer An organic precursor compound is gasified and fed into the reaction chamber of a high density plasma chemical vapor deposition (HDP-CVD) reactor. The organic precursor comprises silicon, oxygen and carbon atoms. No reactive oxygen gas or other oxidizer is... | 12/18/2001 |
| 6287889 | Diamond thin film or the like, method for forming and modifying the thin film, and method for processing the thin film An improved gas phase synthesized diamond, CBN, BCN, or CN thin film having a modified region in which strain, defects, color and the like are reduced and/or eliminated. The thin film can be formed on a substrate or be a free-standing thin film from which... | 09/11/2001 |
| 6284674 | Plasma processing device and a method of plasma process Disclosed is a plasma process apparatus which permits generating microwaves and a magnetic field so as to bring about electron cyclotron resonance and, thus, to generate a plasma which is applied to a semiconductor wafer, comprising microwave generating m... | 09/04/2001 |
| 6274513 | Method of oxidizing a nitride film on a conductive substrate The present invention discloses a method of oxidizing a nitride film on a conductive substrate comprising the following steps. First, a conductive substrate is provided, and a nitride film is formed on the main surface of the conductive substrate by perfo... | 08/14/2001 |
| 6265327 | Method for forming an insulating film on semiconductor substrate surface and apparatus for carrying out the method Disclosed are a method and apparatus for forming an insulating film on the surface of a semiconductor substrate capable of improving the quality and electrical properties of the insulating film with no employment of high-temperature heating and with good ... | 07/24/2001 |
| 6197647 | Method of forming ultra-thin oxides with low temperature oxidation A semiconductor process in which a low temperature oxidation of a semiconductor substrate upper surface followed by an in situ deposition of polysilicon are used to create a thin oxide MOS structure. Preliminarily, the upper surface of a semiconductor sub... | 03/06/2001 |
