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| Number | Title | Issue Date |
| 7985695 | Forming silicon oxide film from RF plasma of oxidizing gas An oxide film formation method comprises steps of: generating a plasma from a gas mixture containing an inert gas and an oxidizing gas whose mixing ratio to the inert gas is higher than 0, and is 0.007 or lower; and forming an oxide film on a surface of a silicon su... | 07/26/2011 |
| 7811945 | Selective plasma processing method A selective plasma processing method, within a processing chamber of a plasma processing apparatus, acts oxygen-containing plasma on a target object having silicon and a silicon nitride layer to selectively oxidize the silicon with respect to the silicon nitride lay... | 10/12/2010 |
| 7786021 | High-density plasma multilayer gate oxide A thin-film transistor (TFT) with a multilayer gate insulator is provided, along with a method for forming the same. The method comprises: forming a channel, first source/drain (S/D) region, and a second S/D region in a Silicon (Si) active layer; using a high-densit... | 08/31/2010 |
| 7709400 | Thermal methods for cleaning post-CMP wafers Methods for cleaning semiconductor wafers following chemical mechanical polishing are provided. An exemplary method exposes a wafer to a thermal treatment in an oxidizing environment followed by a thermal treatment in a reducing environment. The thermal treatment in... | 05/04/2010 |
| 7674723 | Plasma immersion ion implantation using an electrode with edge-effect suppression by a downwardly curving edge In a plasma reactor, RF bias power is applied from an RF bias power generator to a disk-shaped electrode underlying and insulated from a workpiece and having a circumferential edge underlying a circumferential edge of the workpiece. The RF bias power is sufficient t... | 03/09/2010 |
| 7670962 | Substrate having stiffener fabrication method An integral plated semiconductor package substrate stiffener provides a low-cost and space-efficient mechanism for maintaining substrate planarity during the manufacturing process. By patterning and plating the stiffener along with the other substrate fabrication pr... | 03/02/2010 |
| 7429369 | Silicon nanoparticle nanotubes and method for making the same A relatively thick electrode is positioned opposite the surface of a substrate/second electrode. The electrode and the substrate surface are both contacted by a solution including silicon nanoparticles. The substrate surface is completely immersed in the solution in... | 09/30/2008 |
| 7413998 | Biased pulse DC reactive sputtering of oxide films A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed... | 08/19/2008 |
| 7381657 | Biased pulse DC reactive sputtering of oxide films A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed... | 06/03/2008 |
| 7371697 | Ion-assisted oxidation methods and the resulting structures Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over d... | 05/13/2008 |
| 7352023 | Constructions comprising hafnium oxide The invention includes methods of forming hafnium-containing materials, such as, for example, hafnium oxide. In one aspect, a semiconductor substrate is provided, and first reaction conditions are utilized to form hafnium-containing seed material in a desired crysta... | 04/01/2008 |
| 7326652 | Atomic layer deposition using photo-enhanced bond reconfiguration An atomic layer deposition process that reduces defective bonds formed when depositing atomic layers on a substrate or atomic layer when forming an integrated circuit device. As the layers are formed, a substrate or previous layer is exposed to a first reactant. Aft... | 02/05/2008 |
| 7291566 | Barrier layer for a processing element and a method of forming the same In order to mitigate erosion of exposed processing elements in a processing system by the process and any subsequent contamination of the substrate in the processing system, processing elements exposed to the process are coated with a protective barrier. The protect... | 11/06/2007 |
| 7288490 | Increased alignment in carbon nanotube growth Method and system for fabricating an array of two or more carbon nanotube (CNT) structures on a coated substrate surface, the structures having substantially the same orientation with respect to a substrate surface. A single electrode, having an associated voltage s... | 10/30/2007 |
| 7273638 | High density plasma oxidation A method of oxidizing a substrate having area of about 30,000 mm2 or more. The surface is preferably comprised of silicon-containing materials, such as silicon, silicon germanium, silicon carbide, silicon nitride, and metal suicides. A mixture of oxygen-b... | 09/25/2007 |
| 7271467 | Multiple oxide thicknesses for merged memory and logic applications Structures are provided for multiple oxide thicknesses on a single silicon wafer. In particular, structures are provided for multiple gate oxide thicknesses on a single chip. The chip can include circuitry including but not limited to the memory and logic technologi... | 09/18/2007 |
| 7268050 | Method for fabricating a MOS transistor in a semiconductor device including annealing in a nitrogen environment to form a nitrided oxide film A method for fabricating a MOS transistor in a semiconductor device is disclosed. An example method subjects a surface of a semiconductor substrate to thermal oxidation to form an oxide film for forming a gate insulating film, deposits a polysilicon layer on the oxi... | 09/11/2007 |
| 7238629 | Deposition method, method of manufacturing semiconductor device, and semiconductor device The present invention relates to a deposition method of a low dielectric constant insulating film, which comprises the steps of generating a first deposition gas containing at least one silicon source selecting from the group consisting of silicon containing organic... | 07/03/2007 |
| 7232724 | Radical oxidation for bitline oxide of SONOS Methods are disclosed for fabricating multi-bit SONOS flash memory cells, comprising forming a first dielectric layer and a charge trapping layer over a substrate of a wafer and selectively etching the dielectric and charge trapping layers down to a substrate region... | 06/19/2007 |
| 7232772 | Substrate processing method A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a plan... | 06/19/2007 |
| 7229931 | Oxygen plasma treatment for enhanced HDP-CVD gapfill Methods are provided for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A process gas having a silicon-containing gas, an oxygen-containing gas, and a fluent... | 06/12/2007 |
| 7196021 | HDP-CVD deposition process for filling high aspect ratio gaps A method for forming a silicon oxide layer over a substrate disposed in a high density plasma substrate processing chamber. The method includes flowing a process gas that includes a silicon-containing source, an oxygen-containing source and a fluorine-containing sou... | 03/27/2007 |
| 7187079 | Stacked memory cell having diffusion barriers A nonconductive hydrogen barrier layer is deposited on a substrate and completely covers the surface area over a memory capacitor and a MOSFET switch of an integrated circuit memory cell. A portion of an insulator layer adjacent to the bottom electrode of a memory c... | 03/06/2007 |
| 7183143 | Method for forming nitrided tunnel oxide layer A method for forming a nitrided tunnel oxide layer is described. A silicon oxide layer as a tunnel oxide layer is formed on a semiconductor substrate, and a plasma nitridation process is performed to implant nitrogen atoms into the silicon oxide layer. A thermal dri... | 02/27/2007 |
| 7179361 | Method of forming a mass over a semiconductor substrate The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a si... | 02/20/2007 |
| 7179716 | Method of forming a metal-containing layer over selected regions of a semiconductor substrate The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a si... | 02/20/2007 |
| 7129175 | Method of manufacturing semiconductor device A semiconductor device manufacturing method comprises forming a first insulating film including silicon, carbon, nitrogen, and hydrogen above a substrate in a first chamber, carrying the substrate into a second chamber other than the first chamber, and discharging a... | 10/31/2006 |
| 7129133 | Method and structure of memory element plug with conductive Ta removed from sidewall at region of memory element film Disclosed are methods and structures for fabrication of reliable and efficient memory cells. The methods involve formation of a conformal diffusion barrier layer in a via, deposition of an electrode material in the via, removal of a certain portion of the electrode ... | 10/31/2006 |
| 7129187 | Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films A method for low-temperature plasma-enhanced chemical vapor deposition of a silicon-nitrogen-containing film on a substrate. The method includes providing a substrate in a process chamber, exciting a reactant gas in a remote plasma source, thereafter mixing the exci... | 10/31/2006 |
| 7122487 | Method for forming an oxide with improved oxygen bonding A deposition oxide interface with improved oxygen bonding and a method for bonding oxygen in an oxide layer are provided. The method includes depositing an M oxide layer where M is a first element selected from a group including elements chemically defined as a soli... | 10/17/2006 |
| 7119033 | Ion-assisted oxidation methods and the resulting structures Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over d... | 10/10/2006 |
| 7112541 | In-situ oxide capping after CVD low k deposition A method of processing a substrate including depositing a low dielectric constant film comprising silicon, carbon, and oxygen on the substrate and depositing an oxide rich cap on the low dielectric constant film is provided. The low dielectric constant film is depos... | 09/26/2006 |
| 7109542 | Capacitor constructions having a conductive layer A capacitor fabrication method may include atomic layer depositing a conductive barrier layer to oxygen diffusion over the first electrode. A method may instead include chemisorbing a layer of a first precursor at least one monolayer thick over the first electrode a... | 09/19/2006 |
| 7102141 | Flash lamp annealing apparatus to generate electromagnetic radiation having selective wavelengths Flash lamp apparatuses that generate electromagnetic radiation with wavelengths greater than and/or less than a defined range of wavelengths are disclosed. ... | 09/05/2006 |
| 7098147 | Semiconductor memory device and method for manufacturing semiconductor device After a lower silicon oxide film is formed on a silicon region, a silicon film is formed on the lower silicon oxide film by, for example, a thermal CVD method. Subsequently, the silicon film is completely nitrided by a plasma nitriding method to be replaced by a sil... | 08/29/2006 |
| 7091129 | Atomic layer deposition using photo-enhanced bond reconfiguration An atomic layer deposition process that reduces defective bonds formed when depositing atomic layers on a substrate or atomic layer when forming an integrated circuit device. As the layers are formed, a substrate or previous layer is exposed to a first reactant. Aft... | 08/15/2006 |
| 7087536 | Silicon oxide gapfill deposition using liquid precursors A silicon oxide film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A liquid Si—C—O—H precursor is vaporized. A flow of the vaporized liquid Si—C—O—H precursor is p... | 08/08/2006 |
| 7071519 | Control of high-k gate dielectric film composition profile for property optimization Methods and systems are disclosed that facilitate formation of dielectric layers having a particular composition profile by forming the dielectric layer as a number of sub-layers. The sub-layers are thin enough so that specific relative compositions can be achieved ... | 07/04/2006 |
| 7052971 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device of the present invention includes, forming a first silicon oxide film by HDP-CVD so as to bury a recess portion in a three-dimensional portion formed in a surface region of a semiconductor workpiece to a position low... | 05/30/2006 |
| 7045447 | Semiconductor device producing method and semiconductor device producing apparatus including forming an oxide layer and changing the impedance or potential to form an oxynitride A semiconductor device producing method using a plasma processing apparatus including a processing chamber, a substrate-supporting body which supports a substrate in the processing chamber, and a cylindrical electrode and a magnetic lines of force-forming member dis... | 05/16/2006 |
