Did You Know...
...that on Dec. 15, 1836, the Patent Office was completely destroyed by fire? Lost were some 7,000 models, 9,000 drawings, and 230 books plus all records of patent applications and grants.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8093159 | Manufacturing method of semiconductor device, and semiconductor device Provided is a manufacturing method of a semiconductor device, which is capable of realizing fine-pitch patterns and thus improving stabilization of patterning precision. The manufacturing method of the semiconductor device comprises forming a first photoresist patte... | 01/10/2012 |
| 8084369 | Producing method of semiconductor device and substrate processing apparatus Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas into the processing chamber to process the plurality of substrates by ... | 12/27/2011 |
| 8039403 | Thin film transistor, method of manufacturing same, display device, method of modifying an oxide film, method of forming an oxide film, semiconductor device, method of manufacturing semiconductor device, and apparatus for manufacturing semiconductor device In a manufacturing method of a thin film transistor (1), the oxide film forming step is performed whereby: a process-target substrate (2) having a surface on which a gate oxide film (4) should be formed is immersed in an oxidizing solution conta... | 10/18/2011 |
| 8012886 | Leadframe treatment for enhancing adhesion of encapsulant thereto A method is provided for treating a leadframe comprising copper or copper alloy to enhance adhesion of molding compound to it. The leadframe is oxidized in an oxidation treatment bath to form copper oxide on the surface of the leadframe. It is then dipped in a compl... | 09/06/2011 |
| 8008215 | Integration of buried oxide layers with crystalline layers A method of forming a buried oxide/crystalline III-V semiconductor dielectric stack is presented. The method includes providing a substrate and forming a layered structure on the substrate comprising of layers of different materials, one of the different materials i... | 08/30/2011 |
| 7998879 | Insulation structure for high temperature conditions and manufacturing method thereof An insulation structure for high temperature conditions and a manufacturing method thereof. In the insulation structure, a substrate has a conductive pattern formed on at least one surface thereof for electrical connection of a device. A metal oxide layer pattern is... | 08/16/2011 |
| 7977254 | Method of forming a gate insulator in group III-V nitride semiconductor devices A method of forming a gate insulator in the manufacture of a semiconductor device comprises conducting a photo-assisted electrochemical process to form a gate-insulating layer on a gallium nitride layer of the semiconductor device, wherein the gate-insulating layer ... | 07/12/2011 |
| 7977253 | Manufacturing method of semiconductor device A method for forming a semiconductor layer having a fine shape is provided. A method for manufacturing a semiconductor device with few variations is provided. In addition, a method for manufacturing a semiconductor device with a high yield is provided where the cost... | 07/12/2011 |
| 7964515 | Method of forming high-dielectric constant films for semiconductor devices A method is provided for forming high dielectric constant (high-k) films for semiconductor devices. According to one embodiment, a metal-carbon-oxygen high-k film is deposited by alternately and sequentially exposing a substrate to a metal-carbon precursor and near ... | 06/21/2011 |
| 7943530 | Semiconductor nanowires having mobility-optimized orientations Prototype semiconductor structures each including a semiconductor link portion and two adjoined pad portions are formed by lithographic patterning of a semiconductor layer on a dielectric material layer. The sidewalls of the semiconductor link portions are oriented ... | 05/17/2011 |
| 7928019 | Semiconductor processing Embodiments of the present disclosure include semiconductor processing methods and systems. One method includes forming a material layer on a semiconductor substrate by exposing a deposition surface of the substrate to at least a first and a second reactant sequenti... | 04/19/2011 |
| 7923380 | Substrate processing apparatus and substrate processing method A substrate processing apparatus includes a processing chamber that processes a substrate, and a substrate placing base enclosed in the processing chamber, and a substrate transporting member that allows the substrate to wait temporarily on the substrate placing bas... | 04/12/2011 |
| 7910494 | Thermal processing furnace, gas delivery system therefor, and methods for delivering a process gas thereto A gas delivery system for supplying a process gas from a gas supply to a thermal processing furnace, a thermal processing furnace equipped with the gas delivery system, and methods for delivering process gas to a thermal processing furnace. The gas delivery system c... | 03/22/2011 |
| 7879737 | Methods for fabricating improved gate dielectrics Disclosed are a variety of methods for increasing the relative thickness in the peripheral or edge regions of gate dielectric patterns to suppress leakage through these regions. The methods provide alternatives to conventional GPOX processes and provide the improved... | 02/01/2011 |
| 7871938 | Producing method of semiconductor device and substrate processing apparatus Disclosed is a producing method of a semiconductor device produced by transferring a plurality of substrates into a processing chamber, supplying oxygen-containing gas and hydrogen-containing gas into the processing chamber which is in a heated state to process the ... | 01/18/2011 |
| 7851382 | Method for manufacturing SiC semiconductor device A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes: implanting an impurity in the SiC layer; applying a cap layer on the SiC la... | 12/14/2010 |
| 7795158 | Oxidation method and apparatus for semiconductor process In an oxidation method for a semiconductor process, target substrates are placed at intervals in a vertical direction within a process field of a process container. An oxidizing gas and a deoxidizing gas are supplied to the process field from one side of the process... | 09/14/2010 |
| 7749918 | Method and apparatus for processing semiconductor substrates Substrates in a reaction chamber are sequentially exposed to at least three gas atmospheres: a first atmosphere of a first purge gas, a second atmosphere of a process gas and a third atmosphere of a second purge gas. The gases are introduced into the reaction chambe... | 07/06/2010 |
| 7741231 | Techniques for providing decoupling capacitance Techniques for electronic device fabrication are provided. In one aspect, an electronic device is provided. The electronic device comprises at least one interposer structure having one or mole vias and a plurality of decoupling capacitors integrated therein, the at ... | 06/22/2010 |
| 7737050 | Method of fabricating a nitrided silicon oxide gate dielectric layer A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C.... | 06/15/2010 |
| 7727904 | Methods of forming SiC MOSFETs with high inversion layer mobility Methods of forming an oxide layer on silicon carbide include thermally growing an oxide layer on a layer of silicon carbide, and annealing the oxide layer in an environment containing NO at a temperature greater than 1175° C. The oxide layer may be annealed in NO i... | 06/01/2010 |
| 7723240 | Methods of low temperature oxidation A method for forming a dielectric is provided. The method includes providing a substrate having a silicon-containing semiconductor layer within a process chamber. The process chamber is capable of ionizing a process precursor to a plasma comprising an oxygen-contain... | 05/25/2010 |
| 7713883 | Manufacturing method of a semiconductor device, and substrate processing apparatus An object of this invention is to make it possible to suppress early-stage oxidation of a substrate surface prior to oxidation processing, and to remove a natural oxidation film. For this reason, a method is provided comprising the steps of loading a substrate into ... | 05/11/2010 |
| 7674722 | Method of forming gate insulating film, semiconductor device and computer recording medium In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large n... | 03/09/2010 |
| 7645709 | Methods for low temperature oxidation of a semiconductor device Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. In some embodiments, a method of forming an oxide layer on a semiconductor substrate includes placing a substrate to be oxidized on a substrate support in a vacuum chamber of a p... | 01/12/2010 |
| 7638439 | Peripheral processing method and method of manufacturing a semiconductor device A peripheral processing method includes: by at least one of locally heating the periphery of a workpiece including a silicon-based substrate and selectively supplying reacting activation species to the periphery, allowing oxidation rate on the periphery to be higher... | 12/29/2009 |
| 7618901 | Process for growing a dielectric layer on a silicon-containing surface using a mixture of NO and O This invention is embodied in an improved process for growing high-quality silicon dioxide layers on silicon by subjecting it to a gaseous mixture of nitrous oxide (N2O) and ozone (O3). The presence of O3 in the oxidizing ambiance gr... | 11/17/2009 |
| 7615499 | Method for oxidizing a layer, and associated holding devices for a substrate A method is presented in which a layer which is to be oxidized is processed, in a single-substrate process. The process temperature during the processing is recorded directly at the substrate or at a holding device for the substrate. The method includes introducing ... | 11/10/2009 |
| 7534730 | Producing method of semiconductor device and substrate processing apparatus Disclosed is a method for manufacturing a semiconductor device which comprises a step for carrying a plurality of substrates (1) in a process chamber (4), a step for supplying an oxygen-containing gas from the upstream side of the substrates (1)... | 05/19/2009 |
| 7517813 | Two-step oxidation process for semiconductor wafers An efficient method for the thermal oxidation of preferably silicon semiconductor wafers using LOCOS (local oxidation of silicon) processes is described. The mechanical stresses of the wafers are to be reduced. To this end, an oxidation method is proposed that compr... | 04/14/2009 |
| 7498270 | Method of forming a silicon oxynitride film with tensile stress A method for forming a densified silicon oxynitride film with tensile stress and a semiconductor device including the densified silicon oxynitride film. The densified silicon oxynitride film can be formed by depositing a porous SiNC:H film on a substrate in a LPCVD ... | 03/03/2009 |
| 7442571 | Semiconductor probe with resistive tip and method of fabricating the same, and information recording apparatus, information reproducing apparatus, and information measuring apparatus having the semiconductor probe Provided are a semiconductor probe having a resistive tip, a method of fabricating the semiconductor probe, and a method of recording and reproducing information using the semiconductor probe. The semiconductor probe includes a tip and a cantilever. The tip is doped... | 10/28/2008 |
| 7442655 | Selective oxidation methods and transistor fabrication methods The invention includes selective oxidation methods and transistor fabrication methods. In one implementation, a selective oxidation method includes positioning a substrate within a chamber. The substrate has first and second different oxidizable materials. The subst... | 10/28/2008 |
| 7439165 | Method of fabricating tensile strained layers and compressive strain layers for a CMOS device A process for forming both tensile and compressive strained silicon layers to accommodate channel regions of MOSFET or CMOS devices has been developed. After formation of shallow trench isolation structures as well as application of high temperature oxidation and ac... | 10/21/2008 |
| 7435690 | Method of preparing a silicon dioxide layer by high temperature oxidation on a substrate having, at least on the surface, germanium or a silicon-germanium alloy Method of preparing a silicon dioxide layer by high-temperature oxidation on a substrate of formula Si1-xGex in which x is greater than 0 and less than or equal to 1, the said method comprising the following successive steps: ... | 10/14/2008 |
| 7435691 | Micromechanical component and suitable method for its manufacture A micromechanical component having a silicon substrate; a cavity provided in the substrate; and a diaphragm, provided on the surface of the substrate, which closes the cavity; the diaphragm featuring a silicon-oxide layer having an opening that is formed by silicon-... | 10/14/2008 |
| 7429539 | Nitriding method of gate oxide film A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a plan... | 09/30/2008 |
| 7425480 | Semiconductor device and method of manufacture thereof A method of manufacturing a MOS transistor incorporating a silicon oxide film serving as a gate insulating film and containing nitrogen and a polycrystalline silicon film serving as a gate electrode and containing a dopant and arranged such that the gate electrode i... | 09/16/2008 |
| 7420202 | Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example, the transistor structure may be a p-channel transistor structure and... | 09/02/2008 |
| 7410910 | Lanthanum aluminum oxynitride dielectric films Electronic apparatus and methods of forming the electronic apparatus include a lanthanum aluminum oxynitride film on a substrate for use in a variety of electronic systems. The lanthanum aluminum oxynitride film may be structured as one or more monolayers. The lanth... | 08/12/2008 |
