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| Number | Title | Issue Date |
| 7374960 | Stress measurement and stress balance in films Methods and systems are provided of fabricating a compound nitride semiconductor structure. A substrate is disposed within a processing chamber into which a group-III precursor and a nitrogen precursor are flowed. A layer is deposited over the substrate with a therm... | 05/20/2008 |
| 7345297 | Nitride semiconductor device A semiconductor device includes an active layer, an n-side contact layer, and a p-side contact layer. The nitride semiconductor device includes at least a first n-side layer, a second n-side layer, a third n-side layer and a fourth n-side layer formed in this order ... | 03/18/2008 |
| 7342261 | Light emitting device A light emitting device includes a substrate having a patterned surface and formed with a plurality of spaced apart cavities, and an epitaxial layer formed on the patterned surface of the substrate, having a patterned surface that is in face-to-face contact with the... | 03/11/2008 |
| 7297569 | Semiconductor devices with reduced active region defects and unique contacting schemes A method of making a semiconductor device having a predetermined epitaxial region, such as an active region, with reduced defect density includes the steps of: (a) forming a dielectric cladding region on a major surface of a single crystal body of a first material; ... | 11/20/2007 |
| 7279698 | System and method for an optical modulator having a quantum well The optical modulator may include a strained layer of SiGe to confine carriers in a quantum well. The strained layer of SiGe may be doped with arsenic to provide electrons. The optical modulator may receive an optical signal and modulate the received signal by alter... | 10/09/2007 |
| 7208133 | Method for the preparation of IV-VI semiconductor nanoparticles A high temperature non-aqueous synthetic procedure for the preparation of substantially monodisperse IV-VI semiconductor nanoparticles is provided. The procedure includes introducing a first precursor selected from the group consisting of a molecular precursor of a ... | 04/24/2007 |
| 7122392 | Methods of forming a high germanium concentration silicon germanium alloy by epitaxial lateral overgrowth and structures formed thereby A method of forming a high germanium concentration, low defect density silicon germanium film and its associated structures is described, comprising forming a dielectric layer on a substrate, patterning the dielectric layer to form a silicon region and at least one ... | 10/17/2006 |
| 7008814 | Method and apparatus for increasing digital color imaging utilizing tandem RGB photodiodes An apparatus is directed to increasing the resolution of digital color imaging that includes a photosensing semiconductor structure. The apparatus provides a monocrystalline silicon substrate, a first buffer layer epitaxially formed and overlying the monocrystalline... | 03/07/2006 |
| 6967119 | Semiconductor laser device and method of fabricating the same There is provided a semiconductor laser device having on a single substrate a plurality of laser portions each oscillating laser light of a different wavelength, the plurality of laser portions containing different types, respectively, of dopant. There is also provi... | 11/22/2005 |
| 6967345 | Dual band QWIP focal plane array A quantum well infrared photodetector (QWIP) that provides two-color image sensing. Two different quantum wells are configured to absorb two different wavelengths. The QWIPs are arrayed in a focal plane array (FPA). The two-color QWIPs are selected for readout by se... | 11/22/2005 |
| 6958257 | Tantalum sputtering target and method of manufacture Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum. ... | 10/25/2005 |
| 6955938 | Tantalum sputtering target and method of manufacture Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum. ... | 10/18/2005 |
| 6921470 | Method of forming metal blanks for sputtering targets The present invention relates to an improvement in the manufacture of metal blanks, discs, and sputtering targets by flattening only one of the two surfaces of a metal plate. The elimination of flattening the metal plate's second surface results in a significant cos... | 07/26/2005 |
| 6902945 | Tapered threshold reset FET for CMOS imagers A sensor may be formed with a transistor comprising a gate that has both n-type and p-type regions to increase the gate work function. In combination with moving the p-type well such that the p-type well only partially dopes the channel of the transistor, the increa... | 06/07/2005 |
| 6784074 | Defect-free semiconductor templates for epitaxial growth and method of making same A method for fabrication of defect-free epitaxial layers on top of a surface of a first defect-containing solid state material includes the steps of selective deposition of a second material, having a high temperature stability, on defect-free regions of the first s... | 08/31/2004 |
| 6781211 | Photodiode having an active region shaped in a convex lens Disclosed is a photodiode with improved light-receiving efficiency and coupling effect with an optical fiber, whose capacitance may be decreased. The inventive photodiode includes a substrate; a buffer layer and a light-absorbing layer laminated in sequence on the s... | 08/24/2004 |
| 6734452 | Infrared radiation-detecting device An AlxGa1−xAs/GaAs/AlxGa1−xAs quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the same energy as... | 05/11/2004 |
| 6724059 | Magnetoelectric transducer and method for producing the same The present invention provides a thin magnetoelectric transducer which has a projected size substantially equal to that of a pellet and which can be subjected to an inspection test nondestructively. The magnetoelectric transducer has a semiconductor device provided ... | 04/20/2004 |
| 6709903 | Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing A method to obtain thin ( | 03/23/2004 |
| 6653701 | Semiconductor device and production method thereof A semiconductor device having laminated successively a porous semiconductor layer, an inorganic semiconductor layer, and optionally an organic substance layer formed therebetween is disclosed. The semiconductor device is produced by immersing a porous sem... | 11/25/2003 |
| 6653166 | Semiconductor device and method of making same The method produces coherent dislocation-free regions from initially dislocated and/or defect-rich lattice mismatched layer grown on top of the substrate having a different lattice constant, which does not contain any processing steps before of after the ... | 11/25/2003 |
| 6635505 | Method of manufacturing an active matrix type semiconductor display device There is provided an active matrix type semiconductor display device which realizes low power consumption and high reliability. In the active matrix type semiconductor display device of the present invention, a counter electrode is divided into two, diffe... | 10/21/2003 |
| 6566161 | Tantalum sputtering target and method of manufacture Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.... | 05/20/2003 |
| 6559058 | Method of fabricating three-dimensional components using endpoint detection One embodiment of the present invention provides a system for using selective etching to form three-dimensional components on a substrate. The system operates by receiving a substrate composed of a first material. Next, a second layer composed of a second... | 05/06/2003 |
| 6492193 | Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structure An optoelectronic device with a Group III Nitride active layer is disclosed that comprises a silicon carbide substrate; an optoelectronic diode with a Group III nitride active layer; a buffer structure selected from the group consisting of gallium nitride... | 12/10/2002 |
| 6431455 | Contactless data carrier A data carrier for noncontacting control of persons with nontransferable entitlement to utilize a service is integrated into a bracelet (1) so as to be useless after the bracelet (1) is opened.... | 08/13/2002 |
| 6380005 | Charge transfer device and method for manufacturing the same In a charge transfer device of the two-layer electrode, two-phase drive type, an N-- semiconductor region 108 and a first insulator film 103 are formed on a P-type semiconductor substrate 101 in the named order. Then, first transfer electrodes ... | 04/30/2002 |
| 6380601 | Multilayer semiconductor structure with phosphide-passivated germanium substrate A multilayer semiconductor structure includes a germanium substrate having a first surface. The germanium substrate has two regions, a bulk p-type germanium region, and a phosphorus-doped n-type germanium region adjacent to the first surface. A layer of a... | 04/30/2002 |
| 6355511 | Method of providing a frontside contact to substrate of SOI device A method for making frontside contact to a substrate through an SOI structure thereon is provided. An etching step is undertaken to form a trench in the SOI structure so as to expose and define a rough surface of the substrate. Then, a thin insulating lay... | 03/12/2002 |
| 6323055 | Tantalum sputtering target and method of manufacture Described is a method for producing high purity tantalum, the high purity tantalum so produced and sputtering targets of high purity tantalum. The method involves purifying starting materials followed by subsequent refining into high purity tantalum.... | 11/27/2001 |
| 6239354 | Electrical isolation of component cells in monolithically interconnected modules A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface an... | 05/29/2001 |
| 6211529 | Infrared radiation-detecting device An Alx Ga1-x As/GaAs/Alx Ga1-x As quantum well exhibiting a bound-to-quasibound intersubband absorptive transition is described. The bound-to-quasibound transition exists when the first excited state has the sam... | 04/03/2001 |
| 5906708 | Silicon-germanium-carbon compositions in selective etch processes Silicon-germanium-based compositions comprising silicon, germanium, and carbon (i.e., Si--Ge--C), methods for growing Si--Ge--C epitaxial layer(s) on a substrate, etchants especially suitable for Si--Ge--C etch-stops, and novel methods of use for Si--Ge--... | 05/25/1999 |
| 5877520 | Trench lateral overflow drain antiblooming structure for virtual phase charge coupled devices with virtual gate element The lateral overflow drain for charge coupled devices includes: a semiconductor region 70 of a first conductivity type having a trench 92; a drain region 24 of a second conductivity type below the trench 92; a gate 20 in the trench 92 overlying and separa... | 03/02/1999 |
| 5130259 | Infrared staring imaging array and method of manufacture Monolithic InSb array devices are described for staring infrared imaging systems operating in the 3-5 μm spectral region. These devices are fabricated with only 4 mask levels compared to 5 mask levels for prior devices and have higher output dynamic rang... | 07/14/1992 |
| 4749659 | Method of manufacturing an infrared-sensitive charge coupled device A charge coupled device (CCD) sensitive to infrared radiation composed of a succession of three layers of Group III-V semiconductor material. The layers are a window layer, a sensitive layer and a storage layer. The layers are fixed to a supporting plate ... | 06/07/1988 |
| 4559695 | Method of manufacturing an infrared radiation imaging device An array of photovoltaic infrared radiation detector elements are formed in a body of infrared sensitive material, e.g. of cadmium mercury telluride. The body is present on a circuit substrate, which may comprise a silicon CCD for processing signals from ... | 12/24/1985 |
| 4377904 | Method of fabricating a narrow band-gap semiconductor CCD imaging device A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation. An opaque field plate over first level insulation is... | 03/29/1983 |
| 4273596 | Method of preparing a monolithic intrinsic infrared focal plane charge coupled device imager An infrared (IR) detector device comprised of a solid state, radiation ha and high resolution monolithic IR focal plane array for imaging applications. The monolithic IR focal plane array has a heterostructure injection scheme that prevents charged-coupl... | 06/16/1981 |
| 4231149 | Narrow band-gap semiconductor CCD imaging device and method of fabrication A monolithic charge-coupled infrared imaging device (CCIRID) is fabricated on N-type HgCdTe. A native oxide layer on the semiconductor is used, in combination with ZnS to provide first level insulation. An opaque field plate over first level insulation is... | 11/04/1980 |
