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| Number | Title | Issue Date |
| 8158534 | Reduction of defects formed on the surface of a silicon oxynitride film Methods for reducing defects on the surface of a silicon oxynitride film are disclosed, in one embodiment, the methods include, forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a s... | 04/17/2012 |
| 8053373 | Semiconductor-on-insulator(SOI) structures including gradient nitrided buried oxide (BOX) A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the... | 11/08/2011 |
| 8034724 | Method for manufacturing semiconductor device It is an object to provide a method of manufacturing a crystalline silicon device and a semiconductor device in which formation of cracks in a substrate, a base protective film, and a crystalline silicon film can be suppressed. First, a layer including a semiconduct... | 10/11/2011 |
| 8021988 | Method of forming semiconductor device and semiconductor device The present invention provides a semiconductor device having an improved silicon oxide film as a gate insulation film of a Metal Insulator Semiconductor structure and a method of making the same. ... | 09/20/2011 |
| 8008214 | Method of forming an insulation structure and method of manufacturing a semiconductor device using the same In a method of forming an insulation structure, at least one oxide layer is formed on an object by at least one oxidation process, and then at least one nitride layer is formed from the oxide layer by at least one nitration process. An edge portion of the insulation... | 08/30/2011 |
| 7964514 | Multiple nitrogen plasma treatments for thin SiON dielectrics A method for the deposition of a dielectric film including forming silicon nitride on the surface of the substrate, oxidizing the silicon nitride on the surface of the substrate, exposing the surface of the substrate to a hydrogen-free nitrogen source, and annealing... | 06/21/2011 |
| 7951727 | Capacitor fabrication method The nitride film forming method comprises the first step of loading a semiconductor substrate 12 into a reaction furnace, and decompressing the inside of the reaction furnace 14 to remove oxygen and water from the inside of the reaction furnace 14 | 05/31/2011 |
| 7947610 | Semiconductor device having a gate insulating film structure including an insulating film containing metal, silicon and oxygen and manufacturing method thereof Claimed and disclosed is a semiconductor device including a transistor having a gate insulating film structure containing nitrogen or fluorine in a compound, such as metal silicate, containing metal, silicon and oxygen, a gate insulating film structure having a lami... | 05/24/2011 |
| 7928018 | Plasma processing method and method for manufacturing an electronic device The application of oxynitriding treatment to electronic appliances involve the problem that N2 ions are formed to thereby damage any oxynitride film. It is intended to provide a method of plasma treatment capable of realizing high-quality oxynitriding and... | 04/19/2011 |
| 7910493 | Semiconductor device manufacturing method, semiconductor device, plasma nitriding treatment method, control program and computer storage medium A nitrided region is formed on a surface of a polysilicon layer by a nitriding treatment wherein plasma of a processing gas is generated by introducing microwaves into a processing chamber by a planar antenna having a plurality of slots. Then, a CVD oxide film or th... | 03/22/2011 |
| 7892984 | Reduction of defects formed on the surface of a silicon oxynitride film Methods for reducing defects on the surface of a silicon oxynitride film are disclosed. In one embodiment, the methods include forming a silicon oxynitride film on a semiconductor substrate and heating the silicon oxynitride film to increase a hydrophilicity of a su... | 02/22/2011 |
| 7842621 | Method of measuring nitrogen concentration, method of forming silicon oxynitride film, and method of manufacturing semiconductor device. The total film thickness T1N of silicon oxynitride film and silicon oxide film remaining as its underlying layer is measured. A measurement target substrate is re-oxidized, and, after the re-oxidization, the total film thickness (T2N) of the silicon ox... | 11/30/2010 |
| 7825036 | Method of synthesizing silicon wires A method of synthesizing silicon wires generally includes the steps of: providing a substrate; forming a copper catalyst particle layer on a top surface of the substrate; heating the reactive device at a temperature of above 450° C. in a flowing protective gas; and... | 11/02/2010 |
| 7696107 | Nitride film forming method, semiconductor device fabrication method, capacitor fabrication method and nitride film forming apparatus The nitride film forming method comprises the first step of loading a semiconductor substrate 12 into a reaction furnace, and decompressing the inside of the reaction furnace 14 to remove oxygen and water from the inside of the reaction furnace 14 | 04/13/2010 |
| 7678709 | Method of forming low-temperature conformal dielectric films A deposition method modulates the reaction rate and thickness of highly conformal dielectric films deposited by forming a saturated catalytic layer on the surface and then exposing the surface to silicon-containing precursor gas and a reaction modulator, which may a... | 03/16/2010 |
| 7666800 | Feature patterning methods Methods of patterning features of semiconductor devices and methods of processing and fabricating semiconductor devices are disclosed. In one embodiment, a method of processing a semiconductor device includes forming first sidewall spacers on a first hard mask, remo... | 02/23/2010 |
| 7651955 | Method for forming silicon-containing materials during a photoexcitation deposition process Embodiments of the invention generally provide a method for depositing films or layers using a UV source during a photoexcitation process. The films are deposited on a substrate and usually contain a material, such as silicon (e.g., epitaxy, crystalline, microcrysta... | 01/26/2010 |
| 7648923 | Method of fabricating semiconductor device A method of fabricating a flash memory device is disclosed. The method comprises forming a first insulating layer on a semiconductor substrate; accumulating nitrogen at an interface between the semiconductor substrate and the first insulating layer to form a second ... | 01/19/2010 |
| 7635655 | Method for replacing a nitrous oxide based oxidation process with a nitric oxide based oxidation process for substrate processing A method for performing an oxidation process on a plurality of substrates in a batch processing system. According to one embodiment, the method includes selecting a N2O-based oxidation process for the substrates including a first process gas containing N | 12/22/2009 |
| 7629270 | Remote plasma activated nitridation A nitrogen precursor that has been activated by exposure to a remotely excited species is used as a reactant to form nitrogen-containing layers. The remotely excited species can be, e.g., N2, Ar, and/or He, which has been excited in a microwave radical ge... | 12/08/2009 |
| 7563726 | Semiconductor device with multiple gate dielectric layers and method for fabricating the same Disclosed are a semiconductor device with dual gate dielectric layers and a method for fabricating the same. The semiconductor device includes: a silicon substrate divided into a cell region where NMOS transistors are formed and a peripheral region where NMOS and PM... | 07/21/2009 |
| 7534729 | Modification of semiconductor surfaces in a liquid Compositions and methods are provided herein that include modifications to at least one surface of a silicon-based semiconductor material. Modifications occur in a liquid and comprise alterations of surface states, passivation, cleaning and/or etching of the surface... | 05/19/2009 |
| 7521375 | Method of forming an oxinitride layer In methods of forming an oxide layer and an oxynitride layer, a substrate is loaded into a reaction chamber having a first pressure and a first temperature. The oxide layer is formed on the substrate using a reaction gas while increasing a temperature of the reactio... | 04/21/2009 |
| 7501352 | Method and system for forming an oxynitride layer The present invention generally provides a method for preparing an oxynitride film on a substrate. A surface of the substrate is exposed to oxygen radicals formed by ultraviolet (UV) radiation induced dissociation of a first process gas comprising at least one molec... | 03/10/2009 |
| 7432216 | Semiconductor device and manufacturing method thereof The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical thickness of 1.5 nm or more and the relative dielectric constant of 4.... | 10/07/2008 |
| 7429369 | Silicon nanoparticle nanotubes and method for making the same A relatively thick electrode is positioned opposite the surface of a substrate/second electrode. The electrode and the substrate surface are both contacted by a solution including silicon nanoparticles. The substrate surface is completely immersed in the solution in... | 09/30/2008 |
| 7429538 | Manufacturing method for two-step post nitridation annealing of plasma nitrided gate dielectric A method of forming a silicon oxynitride gate dielectric. The method includes incorporating nitrogen into a dielectric film using a plasma nitridation process to form a silicon oxynitride film. The silicon oxynitride film is annealed in a first ambient. The first am... | 09/30/2008 |
| 7429539 | Nitriding method of gate oxide film A substrate processing method comprises the step of forming an oxide film on a silicon substrate surface, and introducing nitrogen atoms into the oxide film by exposing the oxide film to nitrogen radicals excited in plasma formed by a microwave introduced via a plan... | 09/30/2008 |
| 7429540 | Silicon oxynitride gate dielectric formation using multiple annealing steps A method for processing a semiconductor substrate in a chamber includes forming a silicon oxynitride film using a two-step anneal process. The first anneal step includes annealing the silicon oxynitride film in the presence of an oxidizing gas that has a partial pre... | 09/30/2008 |
| 7420202 | Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example, the transistor structure may be a p-channel transistor structure and... | 09/02/2008 |
| 7413998 | Biased pulse DC reactive sputtering of oxide films A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed... | 08/19/2008 |
| 7410911 | Method for stabilizing high pressure oxidation of a semiconductor device A method and apparatus for preventing N2O from becoming super critical during a high pressure oxidation stage within a high pressure oxidation furnace are disclosed. The method and apparatus utilize a catalyst to catalytically disassociate N2O ... | 08/12/2008 |
| 7402472 | Method of making a nitrided gate dielectric A gate dielectric is treated with a nitridation step and an anneal. After this, an additional nitridation step and anneal is performed. The second nitridation and anneal results in an improvement in the relationship between gate leakage current density and current d... | 07/22/2008 |
| 7396776 | Semiconductor-on-insulator (SOI) structures including gradient nitrided buried oxide (BOX) A semiconductor-on-insulator structure includes a buried dielectric layer interposed between a base semiconductor substrate and a surface semiconductor layer. The buried dielectric layer comprises an oxide material that includes a nitrogen gradient that peaks at the... | 07/08/2008 |
| 7387972 | Reducing nitrogen concentration with in-situ steam generation In-situ steam generation (ISSG) is used to reduce the nitrogen concentration in silicon and silicon oxide areas. ... | 06/17/2008 |
| 7384880 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises converting a hydrophobic surface of a substrate into a hydrophilic surface, and forming a high-k gate dielectric layer on the hydrophilic surface. ... | 06/10/2008 |
| 7381657 | Biased pulse DC reactive sputtering of oxide films A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed... | 06/03/2008 |
| 7378358 | Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, an... | 05/27/2008 |
| 7378319 | Method of forming double gate dielectric layers and semiconductor device having the same A method of forming double gate dielectric layers composed of an underlying oxide layer and an overlying oxy-nitride layer is provided to prevent degradation of gate dielectric properties due to plasma-induced charges. In the method, the oxide layer is thermally gro... | 05/27/2008 |
| 7371647 | Methods of forming transistors The invention encompasses a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nit... | 05/13/2008 |
