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| Number | Title | Issue Date |
| 8043978 | Electronic device and method for producing electronic device Provided is a novel electronic device that comprises graphite, graphene or the like. An electronic device having a substrate, a layer comprising a 6-member ring-structured carbon homologue as the main ingredient, a pair of electrodes, a layer comprising alumi... | 10/25/2011 |
| 7635654 | Magnetic tunnel junction device with improved barrier layer Methods and apparatus are provided for magnetic tunnel junction (MTJ) devices and arrays, comprising metal-insulator-metal (M-I-M) structures with opposed first and second ferro-magnetic electrodes with alterable relative magnetization direction. The insulator is fo... | 12/22/2009 |
| 7442655 | Selective oxidation methods and transistor fabrication methods The invention includes selective oxidation methods and transistor fabrication methods. In one implementation, a selective oxidation method includes positioning a substrate within a chamber. The substrate has first and second different oxidizable materials. The subst... | 10/28/2008 |
| 7429515 | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate oxides formed from alloys such as cobalt-titanium are thermodynamically stable s... | 09/30/2008 |
| 7338826 | Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN b... | 03/04/2008 |
| 7329362 | Dual angle milling for current perpendicular to plane (CPP) magnetoresistive sensor definition A method for constructing a magnetoresistive sensor which eliminates all redeposited material (redep) from the sides of the sensor. The method involves forming a mask over a plurality of sensor layers, and then performing an ion mill at an angle that is nearly norma... | 02/12/2008 |
| 7329614 | Heat resistant ohmic electrode and method of manufacturing the same An aspect of the present invention provides an ohmic electrode that includes an SiC (silicon carbide) substrate, an impurity region selectively formed in a surface of the SiC substrate, an insulating film formed on the surface of the SiC substrate, a contact hole op... | 02/12/2008 |
| 7319066 | Semiconductor device and method for fabricating the same The semiconductor device comprises a silicon wafer 10, a multilayer interconnection 12 buried in inter-layer insulation film formed on the upper surface of the silicon wafer 10, and a silicon nitride film 16b which is formed on the... | 01/15/2008 |
| 7291566 | Barrier layer for a processing element and a method of forming the same In order to mitigate erosion of exposed processing elements in a processing system by the process and any subsequent contamination of the substrate in the processing system, processing elements exposed to the process are coated with a protective barrier. The protect... | 11/06/2007 |
| 7282131 | Methods of electrochemically treating semiconductor substrates The invention includes methods of electrochemically treating semiconductor substrates. The invention includes a method of electroplating a substance. A substrate having defined first and second regions is provided. The first and second regions can be defined by a si... | 10/16/2007 |
| 7279393 | Trench isolation structure and method of manufacture therefor The present invention provides a trench isolation structure, a method for manufacturing a trench isolation structure, and a method for manufacturing an integrated circuit including the trench isolation structure. In one aspect, the method includes forming a hardmask... | 10/09/2007 |
| 7279732 | Enhanced atomic layer deposition A method of enhanced atomic layer deposition is described. In an embodiment, the enhancement is the use of plasma. Plasma begins prior to flowing a second precursor into the chamber. The second precursor reacts with a prior precursor to deposit a layer on the substr... | 10/09/2007 |
| 7229914 | Wiring layer structure for ferroelectric capacitor Wiring layers through that come into direct contact with an electrode of a ferroelectric capacitor provide a wiring layer structure configured so that the characteristic of the ferroelectric substance is not degraded by production of a reducing agent. One of coating... | 06/12/2007 |
| 7221586 | Memory utilizing oxide nanolaminates Structures, systems and methods for transistors utilizing oxide nanolaminates are provided. One transistor embodiment includes a first source/drain region, a second source/drain region, and a channel region therebetween. A gate is separated from the channel region b... | 05/22/2007 |
| 7208804 | Crystalline or amorphous medium-K gate oxides, Y0and Gd0 A gate oxide and method of fabricating a gate oxide that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Also shown is a gate oxide with a conduction band offset of 2 eV or greater. Gate oxi... | 04/24/2007 |
| 7205218 | Method including forming gate dielectrics having multiple lanthanide oxide layers A dielectric film having a layer of a lanthanide oxide and a layer of another lanthanide oxide, and a method of fabricating such a dielectric film produce a reliable gate dielectric with a equivalent oxide thickness thinner than attainable using SiO2. A g... | 04/17/2007 |
| 7205620 | Highly reliable amorphous high-k gate dielectric ZrON A gate dielectric and method of fabricating a gate dielectric that produces a more reliable and thinner equivalent oxide thickness than conventional SiO2 gate oxides are provided. Gate dielectrics formed from metals such as zirconium are thermodynamically... | 04/17/2007 |
| 7199023 | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed A dielectric film containing atomic layer deposited HfSiON and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The HfSiON layer thickness is contro... | 04/03/2007 |
| 7193893 | Write once read only memory employing floating gates Structures and methods for write once read only memory employing floating gates are provided. The write once read only memory cell includes a floating gate transistor formed in a modified dynamic random access memory (DRAM) fabrication process. The floating gate tra... | 03/20/2007 |
| 7192892 | Atomic layer deposited dielectric layers An atomic layer deposited dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing a hafnium metal layer on a substrate sur... | 03/20/2007 |
| 7183186 | Atomic layer deposited ZrTiOfilms After pulsing the second purging gas, a zirconium-containing precursor is pulsed into reaction chamber 220, at block 430. In an embodiment, the zirconium-containing precursor is ZTB. In other embodiments, a zirconium-containing precursor includes but i... | 02/27/2007 |
| 7166543 | Methods for forming an enriched metal oxide surface for use in a semiconductor device Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state for use in a semiconductor device are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state for use in a semiconductor ... | 01/23/2007 |
| 7141512 | Method of cleaning semiconductor device fabrication apparatus A semiconductor device fabrication apparatus is cleaned after a conductive layer is formed on a metal oxide layer of a substrate. The substrate is disposed on a heater in a process chamber of the apparatus, and the conductive layer is formed by introducing source ga... | 11/28/2006 |
| 7135369 | Atomic layer deposited ZrAlO dielectric layers including ZrAlO An atomic layer deposited ZrAlxOy dielectric layer and a method of fabricating such a dielectric layer produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Pulsing a zirconium-c... | 11/14/2006 |
| 7135421 | Atomic layer-deposited hafnium aluminum oxide A dielectric film containing HfAlO3 and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer depos... | 11/14/2006 |
| 7112494 | Write once read only memory employing charge trapping in insulators Structures and methods for write once read only memory employing charge trapping in insulators are provided. The write once read only memory cell includes a metal oxide semiconductor field effect transistor having a first source/drain region, a second source/drain r... | 09/26/2006 |
| 7101813 | Atomic layer deposited Zr-Sn-Ti-O films A dielectric film containing atomic layer deposited Zr—Sn—Ti—O and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. Depositing titanium and ox... | 09/05/2006 |
| 7101754 | Titanium silicate films with high dielectric constant A method of making a film with a high dielectric constant uses a spin-on sol-gel process to deposit the film on a substrate, the film having a composition (SiO2)x(TiO2)1−x, where 0.50 | 09/05/2006 |
| 7091133 | Two-step formation of etch stop layer A film is formed on a semiconductor substrate where a copper layer is to be formed and in contact with the film, by a method including the steps of: (i) introducing a first reaction gas comprising a deposition gas containing silicon, carbon, and hydrogen, and an ine... | 08/15/2006 |
| 7084078 | Atomic layer deposited lanthanide doped TiOx dielectric films A dielectric film containing atomic layer deposited lanthanide doped TiOx and a method of fabricating such a dielectric film produce a reliable dielectric layer having an equivalent oxide thickness thinner than attainable using SiO2. The lantha... | 08/01/2006 |
| 7064058 | Low-temperature growth high-quality ultra-thin praseodymium gate dieletrics A praseodymium (Pr) gate oxide and method of fabricating same that produces a high-quality and ultra-thin equivalent oxide thickness as compared to conventional SiO2 gate oxides are provided. The Pr gate oxide is thermodynamically stable so that the oxide... | 06/20/2006 |
| 7060508 | Self-aligned junction passivation for superconductor integrated circuit A superconductor integrated circuit (1) includes an anodization ring (35) disposed around a perimeter of a tunnel junction region (27) for preventing a short-circuit between an outside contact (41) and the base electrode layer (18)... | 06/13/2006 |
| 7052997 | Method to form etch and/or CMP stop layers In a DRAM fabrication process, a first oxide is provided over a transistor gate and over a substrate extending from under the gate. The deposition is non-conformal in that the oxide is thicker over the gate and over the substrate than it is on the side of the gate. ... | 05/30/2006 |
| 7049248 | Method for manufacturing semiconductor device The present invention discloses a method for manufacturing semiconductor device wherein a cleaning process of a buffer layer is performed prior to a formation of a nitride film. The cleaning process allows to maintain the deposition thickness of the nitride film eve... | 05/23/2006 |
| 7045430 | Atomic layer-deposited LaAlO3 films for gate dielectrics A dielectric film containing LaAlO3 and method of fabricating a dielectric film contained LaAlO3 produce a reliable gate dielectric having a thinner equivalent oxide thickness than attainable using SiO2. The LaAlO3 gate di... | 05/16/2006 |
| 7041530 | Method of production of nano particle dispersed composite material A method of the production of a nanoparticle dispersed composite material capable of controlling a particle size and a three dimensional arrangement of the nanoparticles is provided. The method of the production of a nanoparticle dispersed composite material of the ... | 05/09/2006 |
| 7005375 | Method to avoid copper contamination of a via or dual damascene structure A process for preventing interconnect metal diffusion into the surrounding dielectric material. Prior to the formation of a metal interconnect in an opening of a dielectric region, the underlying metal surface is cleaned, during which metal can be deposited on the s... | 02/28/2006 |
| 6992368 | Production of metal insulator metal (MIM) structures using anodizing process Metal-insulator-metal capacitor structures are formed in semiconductor substrates using an anodization procedure on deposited underlying metalization followed by deposition of the second metal and planarization by chemical-mechanical polishing or other procedures. T... | 01/31/2006 |
| 6979855 | High-quality praseodymium gate dielectrics A praseodymium (Pr) gate oxide and method of fabricating same that produces a high-quality and ultra-thin equivalent oxide thickness as compared to conventional SiO2 gate oxides are provided. The Pr gate oxide is thermodynamically stable so that the oxide... | 12/27/2005 |
| 6970370 | Ferroelectric write once read only memory for archival storage Structures and methods for ferroelectric write once read only memory adapted to be programmed for long retention archival storage are provided. The write once read only memory cell includes a charge amplifier transistor. The transistor includes a source region, a dr... | 11/29/2005 |
