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| Number | Title | Issue Date |
| 8173553 | Epitaxial wafer and production method thereof A small amount of oxygen is ion-implanted in a wafer surface layer, and then heat treatment is performed so as to form an incomplete implanted oxide film in the surface layer. Thereby, wafer cost is reduced; a pit is prevented from forming in a surface of an epitaxi... | 05/08/2012 |
| 8101528 | Low temperature ion implantation A method of processing to a substrate while minimizing cost and manufacturing time is disclosed. The implantation of the source and drain regions of a semiconductor device are performed at low temperatures, such as below 273° K. This low temperature implant reduces... | 01/24/2012 |
| 8080482 | Methods for preparing a semiconductor structure for use in backside illumination applications This invention generally relates to an epitaxial silicon semiconductor wafer with increased thermal conductivity to transfer heat away from a device layer, while also having resistance to common failure mechanisms, such as latch-up failures and radiation event failu... | 12/20/2011 |
| 7875560 | Semiconductor having optimized insulation structure and process for producing the semiconductor A semiconductor having an optimized insulation structure which is simple and inexpensive to produce and can be made smaller than LOCOS insulation structures is disclosed. An implantation mask on a surface of a semiconductor substrate is used to implant elements into... | 01/25/2011 |
| 7838437 | Method for simultaneous recrystallization and doping of semiconductor layers The invention relates to a method for simultaneous recrystallization and doping of semiconductor layers, in particular for the production of crystalline silicon thin layer solar cells. In this method, in a first step a substrate base layer 1 is produced, in a... | 11/23/2010 |
| 7659213 | Transistor having an embedded tensile strain layer with reduced offset to the gate electrode and a method for forming the same By incorporating carbon by means of ion implantation and a subsequent flash-based or laser-based anneal process, strained silicon/carbon material with tensile strain may be positioned in close proximity to the channel region, thereby enhancing the strain-inducing me... | 02/09/2010 |
| 7635653 | Method of fabricating a semiconductor circuit having a plurality of MOS transistors and flash memory A semiconductor integrated circuit that includes thereon a flash memory and a plurality of MOS transistors using different power supply voltages is formed by a process in which a thermal oxidation process is applied to one of the device regions while covering the ot... | 12/22/2009 |
| 7569496 | Method for manufacturing SiC semiconductor device A method for manufacturing a SiC semiconductor device includes: forming an impurity layer in a SiC layer; and forming an oxide film on the SiC layer. The forming the impurity layer includes: implanting an impurity ion in the SiC layer; forming a carbon layer on the ... | 08/04/2009 |
| 7452826 | Oxidation method and oxidation system An oxidation method is capable of forming oxide films in an improved interfilm thickness uniformity. The oxidation method includes the steps of supplying an oxidizing gas and a reducing gas into a processing vessel 22 capable of being evacuated and holding a ... | 11/18/2008 |
| 7429514 | Use of selective oxidation to form asymmetrical oxide features during the manufacture of a semiconductor device A sidewall oxidation process for use during the formation of a transistor such as a flash memory cell allows for improved control of a gate oxide profile. The method comprises doping transistor source and drain regions to different doping levels, then performing a t... | 09/30/2008 |
| 7419917 | Ion implanted microscale and nanoscale device method A method is used for producing nanoscale and microscale devices in a variety of materials, such as silicon dioxide patterned buried films. The method is inexpensive and reliable for making small scale mechanical, optical, or electrical devices and relies upon the im... | 09/02/2008 |
| 7413996 | High k gate insulator removal A method of forming a high k gate insulation layer in an integrated circuit on a substrate. A high k layer is deposited onto the substrate, and patterned with a mask to define the high k gate insulation layer and exposed portions of the high k layer. The exposed por... | 08/19/2008 |
| 7410877 | Method for manufacturing SIMOX wafer and SIMOX wafer A method for manufacturing a SIMOX wafer includes: heating a silicon wafer, implanting oxygen ions so as to form a high oxygen concentration layer; implanting oxygen ions into the silicon wafer obtained by the forming of the high oxygen concentration layer to form a... | 08/12/2008 |
| 7384857 | Method to fabricate completely isolated silicon regions The construction of Shallow Trench Isolation, STI, regions is integrated in to a SIMOX fabrication process for a Silicon On Insulator, SOI, wafer. Prior to the beginning of the SOI process, a preferred nitrogen (N2) implant is applied to the silicon wafer... | 06/10/2008 |
| 7371697 | Ion-assisted oxidation methods and the resulting structures Oxidation methods and resulting structures including providing an oxide layer on a substrate and then re-oxidizing the oxide layer by vertical ion bombardment of the oxide layer in an atmosphere containing at least one oxidant. The oxide layer may be provided over d... | 05/13/2008 |
| 7371648 | Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the same The present invention provides a method for manufacturing a transistor device, and a method for manufacturing an integrated circuit including the same. The method for manufacturing the transistor device, among other elements, includes forming a gate structure over a... | 05/13/2008 |
| 7368359 | Method for manufacturing semiconductor substrate and semiconductor substrate A semiconductor substrate (100) is acquired by forming a mask with a target thickness on a major surface of a single-crystal silicon substrate, implanting oxygen ions to the major surface at a high temperature, forming a surface protection layer for blocking ... | 05/06/2008 |
| 7361586 | Preamorphization to minimize void formation Methods are described for eliminating void formation during the fabrication of and/or operation of memory cells/devices. According to one aspect of the present disclosure, the methods to eliminate voids include formation of an opening on a semiconductor structure, f... | 04/22/2008 |
| 7348273 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device that can inhibit transformation of an NiSi layer into a disilicide is to be provided. An NiSi layer is formed on gate electrodes and source/drain regions in both of a P-MOS transistor and a N-MOS transistor (a silicid... | 03/25/2008 |
| 7348283 | Mechanically robust dielectric film and stack A method for forming a mechanically robust dielectric film comprises depositing a dielectric film on a substrate and then inducing a compressive strain in a top surface of the dielectric film to form a compressive strained surface. The compressive strain may be indu... | 03/25/2008 |
| 7348186 | Method for improving a semiconductor substrate having SiGe film and semiconductor device manufactured by using this method A method of improving a semiconductor substrate including a SiGe film on a Si or SOI substrate is provided. The method includes determining a relationship between a film condition of the SiGe film and a hydrogen ion implantation condition used in making the SiGe fil... | 03/25/2008 |
| 7332443 | Method for fabricating a semiconductor device The present invention relates to a method for fabricating a semiconductor device. In order to provide for a high carrier mobility in an active region of the device, germanium atoms are implanted into a surface of a semiconductor substrate such that a germanium-conta... | 02/19/2008 |
| 7332394 | Method to reduce a capacitor depletion phenomena A method of integrating the fabrication of a capacitor cell and a logic device region, wherein the surface area of a capacitor region is increased, and the risk of a capacitor depletion phenomena is reduced, has been developed. After formation of insulator filled ST... | 02/19/2008 |
| 7329589 | Method for manufacturing silicon-on-insulator wafer A method for manufacturing a SOI wafer includes a step of forming a SOI wafer including a silicon support, an insulating layer containing oxide, and a superficial silicon layer arranged in that order and also includes a step of introducing hydrogen into the interfac... | 02/12/2008 |
| 7309646 | De-fluoridation process A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conforma... | 12/18/2007 |
| 7306965 | Oxygen ion conductor device, method for fabricating oxygen ion conductor device, and oxygen concentration control system A first electrode thin film is formed on an upper surface of the oxygen ion conductive thin film so as to have a through hole. A resistor is formed on part of the upper surface of the oxygen conductive thin film located in the through hole. Thus, the oxygen ion cond... | 12/11/2007 |
| 7294200 | Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device A method for producing a nitride semiconductor crystal comprising steps (a), (b) and (c), which steps follow in sequence as follows: a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semico... | 11/13/2007 |
| 7291566 | Barrier layer for a processing element and a method of forming the same In order to mitigate erosion of exposed processing elements in a processing system by the process and any subsequent contamination of the substrate in the processing system, processing elements exposed to the process are coated with a protective barrier. The protect... | 11/06/2007 |
| 7285452 | Method to selectively form regions having differing properties and structure A semiconductor device is formed having two physically separate regions with differing properties such as different surface orientation, crystal rotation, strain or composition. In one form a first layer having a first property is formed on an insulating layer. The ... | 10/23/2007 |
| 7285495 | Methods for thermally treating a semiconductor layer A method for thermally treating a semiconductor layer is described. An embodiment of the technique includes implanting atomic species into a first surface of a donor wafer to form a zone of weakness at a predetermined depth that defines the thickness of a transfer l... | 10/23/2007 |
| 7282449 | Thermal treatment of a semiconductor layer A method for thermally treating a silicon germanium semiconductor layer from a donor wafer is described. An embodiment of the technique includes co-implanting atomic species into a first surface of the donor wafer to form a zone of weakness at a predetermined depth ... | 10/16/2007 |
| 7273788 | Ultra-thin semiconductors bonded on glass substrates A method for forming a semiconductor on insulator structure includes providing a glass substrate, providing a semiconductor wafer, and performing a bonding cut process on the semiconductor wafer and the glass substrate to provide a thin semiconductor layer bonded to... | 09/25/2007 |
| 7262428 | Strained Si/SiGe/SOI islands and processes of making same A process of making a strained silicon-on-insulator structure is disclosed. A recess is formed in a substrate to laterally isolate an active area. An undercutting etch forms a bubble recess under the active area to partially vertically isolate the active area. A the... | 08/28/2007 |
| 7253120 | Selectable area laser assisted processing of substrates A system and method for selectable area laser treatment of a substrate, such as thin film transistors, the system including a holder holding a substrate in proximity to reactant, and laser beams each addressing independently selectable mutually set apart locations o... | 08/07/2007 |
| 7247569 | Ultra-thin Si MOSFET device structure and method of manufacture The present invention comprises a method for forming an ultra-thin channel MOSFET and the ultra-thin channel MOSFET produced therefrom. Specifically, the method comprises providing an SOI substrate having a buried insulating layer underlying an SOI layer; forming a ... | 07/24/2007 |
| 7241702 | Processing method for annealing and doping a semiconductor A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer (13) formed on a substrate (11) with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material (... | 07/10/2007 |
| 7241703 | Film forming method for semiconductor device A method of forming films in a semiconductor device that can appropriately control a resistance value of a thin film resistance on an ozone TEOS film while preventing a metal thin film from remaining around a surface step unit after the metal thin film was dry etche... | 07/10/2007 |
| 7238973 | Semiconductor member, manufacturing method thereof, and semiconductor device An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and st... | 07/03/2007 |
| 7235835 | Semiconductor device and its manufacturing method, and electronic device The present invention proposes a semiconductor device, its manufacturing method and to an electronic apparatus thereof equipped with the semiconductor device where it becomes possible to make a CMOS type solid-state imaging device, an imager area formed with a MOS t... | 06/26/2007 |
| 7235446 | Methods of forming silicon-doped aluminum oxide, and methods of forming transistors and memory devices The invention encompasses a method of forming a silicon-doped aluminum oxide. Aluminum oxide and silicon monoxide are co-evaporated. Subsequently, at least some of the evaporated aluminum oxide and silicon monoxide is deposited on a substrate to form the silicon-dop... | 06/26/2007 |
