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| Number | Title | Issue Date |
| 8168546 | Method for selective deposition and devices A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is has in its backbone, s... | 05/01/2012 |
| 8133820 | Substrate processing method and substrate processing apparatus Substrate contamination from tungsten is prevented. A substrate processing method comprises a main treatment process for oxidizing a substrate containing tungsten with a gas containing oxygen, and a cleaning process for removing tungsten oxides with a gas containing... | 03/13/2012 |
| 8105957 | Method of producing semiconductor device Disclosed is a producing method of a semiconductor device comprising a first step of supplying a first reactant to a substrate to cause a ligand-exchange reaction between a ligand of the first reactant and a ligand as a reactive site existing on a surface of the sub... | 01/31/2012 |
| 8043977 | Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon c... | 10/25/2011 |
| 7998878 | Method for selective deposition and devices A chemical vapor deposition method such as an atomic-layer-deposition method for forming a patterned thin film includes applying a deposition inhibitor material to a substrate. The deposition inhibitor material is a hydrophilic polymer that is soluble in an aqueous ... | 08/16/2011 |
| 7972972 | Molecular self-assembly in substrate processing Methods for sealing a porous dielectric are presented including: receiving a substrate, the substrate including the porous dielectric; exposing the substrate to an organosilane, where the organosilane includes a hydrolysable group for facilitating attachment with th... | 07/05/2011 |
| 7955991 | Producing method of a semiconductor device using CVD processing Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibl... | 06/07/2011 |
| 7915178 | Passivation of aluminum nitride substrates The present invention provides methods of protecting a surface of an aluminum nitride substrate. The substrate with the protected surface can be stored for a period of time and easily activated to be in a condition ready for thin film growth or other processing. In ... | 03/29/2011 |
| 7867915 | Method for activating nitride surfaces for amine-reactive chemistry Provided is a method for controllably activating a surface for stable amine-reactive chemistries. A surface containing nitride is exposed to a plasma having a reactive species containing hydrogen for a period of time sufficient to activate the substrate for amine-re... | 01/11/2011 |
| 7867916 | Horizontal coffee-stain method using control structure to pattern self-organized line structures A modified coffee-stain method for producing self-organized line structures and other very fine features that involves disposing a solution puddle on a target substrate, and then controlling the peripheral boundary shape of the puddle using a control structure that ... | 01/11/2011 |
| 7851381 | Surface treatment method for nitride crystal, nitride crystal substrate, nitride crystal substrate with epitaxial layer and semiconductor device, and method of manufacturing nitride crystal substrate with epitaxial layer and semiconductor device A surface treatment method for a nitride crystal is a surface treatment method of chemically and mechanically polishing a surface of the nitride crystal. Oxide abrasive grains are used. The abrasive grains have a standard free energy of formation of at least −850 ... | 12/14/2010 |
| 7799703 | Processing method and storage medium A processing method includes a gas having a Si—CH3 bond supplied into a processing chamber after a target substrate to be processed is loaded into the processing chamber; and a silylation process performed on the target substrate. The internal pressure ... | 09/21/2010 |
| 7763550 | Method of forming a layer on a wafer A layer is formed on a semiconductor wafer in an apparatus having a processing chamber, a transferring chamber, and a wafer boat. The boat having the semiconductor wafer thereon is rotated in the transferring chamber. While the boat is rotated, the boat is transferr... | 07/27/2010 |
| 7749917 | Dry cleaning of silicon surface for solar cell applications A method and apparatus for cleaning layers of solar cell substrates is disclosed. The substrate is exposed to a reactive gas that may comprise neutral radicals comprising nitrogen and fluorine, or that may comprise anhydrous HF and water, alcohol, or a mixture of wa... | 07/06/2010 |
| 7682987 | Device for processing substrate and method of manufacturing semiconductor device Provided is a substrate processing apparatus and a method of manufacturing a semiconductor device, which are hard to cause a defect in processing a substrate owing to that a pressure inside a process chamber is not kept constant, and which enable a better processing... | 03/23/2010 |
| 7655575 | InN/InP/TiOphotosensitized electrode The present invention is a photosensitized electrode which absorbs sunlight to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell de... | 02/02/2010 |
| 7622397 | InN/TiOphotosensitized electrode The present invention is a photosensitized electrode which absorbs sun light to obtain pairs of separated electron and hole. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resistance and is fi... | 11/24/2009 |
| 7572741 | Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen Methods of forming oxide layers on silicon carbide layers are disclosed, including placing a silicon carbide layer in a chamber such as an oxidation furnace tube that is substantially free of metallic impurities, heating an atmosphere of the chamber to a temperature... | 08/11/2009 |
| 7541294 | Semiconductor package and semiconductor package mounting method To provide a semiconductor package mounting method, with excellent work efficiency, wherein the direction of a semiconductor package can be verified by a simple method before mounting. One corner of a square shaped display section provided on the surface of a semico... | 06/02/2009 |
| 7541295 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device according to one aspect of the present invention comprises: forming a gate insulation film on a semiconductor substrate in which element separation regions are formed; depositing a gate lower layer material on the sem... | 06/02/2009 |
| 7517812 | Method and system for forming a nitrided germanium-containing layer using plasma processing A method and system for forming a nitrided germanium-containing layer by plasma processing. The method includes providing a germanium-containing substrate in a process chamber, generating a plasma from a process gas containing N2 and a noble gas, where th... | 04/14/2009 |
| 7420202 | Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example, the transistor structure may be a p-channel transistor structure and... | 09/02/2008 |
| 7413914 | Method and apparatus for manufacturing semiconductor device, method and apparatus for controlling the same, and method and apparatus for simulating manufacturing process of semiconductor device A process of manufacturing a semiconductor device utilizing a thermo-chemical reaction is started based on preset initial settings, a state function of an atmosphere associated with the thermo-chemical reaction is measured, a state of the atmosphere and a change the... | 08/19/2008 |
| 7378358 | Method for forming insulating film on substrate, method for manufacturing semiconductor device and substrate-processing apparatus A substrate-processing apparatus (100, 40) comprises a radical-forming unit (26) for forming the nitrogen radicals and oxygen radicals through a high-frequency plasma, a processing vessel (21) in which a substrate (W) to be processed is held, an... | 05/27/2008 |
| 7378319 | Method of forming double gate dielectric layers and semiconductor device having the same A method of forming double gate dielectric layers composed of an underlying oxide layer and an overlying oxy-nitride layer is provided to prevent degradation of gate dielectric properties due to plasma-induced charges. In the method, the oxide layer is thermally gro... | 05/27/2008 |
| 7368400 | Method for forming oxide film in semiconductor device The present invention relates to a method for forming an oxide film in semiconductor devices. According to the present invention, after an oxide film is formed, interface trap charge and oxide trap charge can be reduced through a high-temperature thermal treatment p... | 05/06/2008 |
| 7365028 | Methods of forming metal oxide and semimetal oxide The invention includes methods of forming metal oxide and/or semimetal oxide. The invention can include formation of at least one metal-and-halogen-containing material and/or at least one semimetal-and-halogen-containing material over a semiconductor substrate surfa... | 04/29/2008 |
| 7358162 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device, includes the steps of: raising a temperature of a sapphire substrate which is included in the semiconductor device from a room temperature to a preheat temperature of 150° C. to 450° C. and keeping the preheat temp... | 04/15/2008 |
| 7339270 | Semiconductor device and method for fabricating the same A semiconductor device has a porous low-dielectric-constant film formed on a substrate and having an opening and a fine particle film composed of a plurality of aggregately deposited fine particles each having a diameter of not less than 1 nm and not more than 2 nm ... | 03/04/2008 |
| 7338613 | System and process for automated microcontact printing An automated process for microcontact printing is provided, comprising the steps of providing a substrate and a stamp; automatically aligning the substrate and stamp so that the stamp is aligned relative to the substrate to impart a pattern to the substrate at a des... | 03/04/2008 |
| 7315068 | Interface layer for the fabrication of electronic devices The present invention is directed to methods for making electronic devices with a thin anisotropic conducting layer interface layer formed between a substrate and an active device layer that is preferably patterned conductive layer. The interface layer preferably pr... | 01/01/2008 |
| 7312163 | Atomic layer deposition methods, and methods of forming materials over semiconductor substrates The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a material over at least a portion of a substrate, and in which at least... | 12/25/2007 |
| 7309660 | Buffer layer for selective SiGe growth for uniform nucleation Methods for preparing a surface for selective silicon-germanium epitaxy by forming a thin silicon (Si) buffer layer or a thin, low concentration SiGe buffer layer for uniform nucleation, are disclosed. ... | 12/18/2007 |
| 7304002 | Method of oxidizing member to be treated A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidatio... | 12/04/2007 |
| 7288490 | Increased alignment in carbon nanotube growth Method and system for fabricating an array of two or more carbon nanotube (CNT) structures on a coated substrate surface, the structures having substantially the same orientation with respect to a substrate surface. A single electrode, having an associated voltage s... | 10/30/2007 |
| 7282437 | Insulating tube, semiconductor device employing the tube, and method of manufacturing the same An insulating tube includes a underlying insulating film, a first sidewall insulating film disposed on the underlying insulating film, a second sidewall insulating film disposed on the underlying insulating film, opposite to the first sidewall insulating film so as ... | 10/16/2007 |
| 7268090 | Method of manufacturing flash memory device A method of manufacturing flash memory devices, comprises the steps of forming an oxide film on a semiconductor substrate, performing a pre-annealing process under N2 gas atmosphere, nitrifying the oxide film by performing a main annealing process under N... | 09/11/2007 |
| 7265015 | Use of chlorine to fabricate trench dielectric in integrated circuits Chlorine is incorporated into pad oxide (110) formed on a silicon substrate (120) before the etch of substrate isolation trenches (134). The chlorine enhances the rounding of the top corners (140C) of the trenches when a silicon oxide lin... | 09/04/2007 |
| 7256259 | Methods for ligation of molecules to surfaces The present invention is a method for a covalent ligation of one or more molecules to one or more surfaces, that is site-specific and both rapid and high yielding. The covalent ligation to the surface is based on the reaction of an azide and a phosphinothioester to ... | 08/14/2007 |
| 7250375 | Substrate processing method and material for electronic device A method of processing a for an electronic device, comprising, at least: a nitridation step (a) of supplying nitrogen radicals on the surface of the electronic device substrate, to thereby form a nitride film on the surface thereof; and a hydrogenation step (b) of s... | 07/31/2007 |
