Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
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| Number | Title | Issue Date |
| 7538044 | Process for producing high-purity silicon and apparatus When high purity silicon is produced through a gas-phase reaction between silicon tetra-chloride and zinc in a reaction furnace, the produce silicon is obtained as block or molten state. after the reaction in which the silicon is not in contact with air and reaction... | 05/26/2009 |
| 7420202 | Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic device An electronic device can include a transistor structure of a first conductivity type, a field isolation region, and a layer of a first stress type overlying the field isolation region. For example, the transistor structure may be a p-channel transistor structure and... | 09/02/2008 |
| 7407873 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes irradiating a region to be crystallized of a non-monocrystalline semiconductor film with laser beam modulated by an optical modulator to have light intensity distribution having a minimum light intensity line... | 08/05/2008 |
| 7355269 | IC on non-semiconductor substrate An integrated circuit and method of fabrication including a non-semiconductor material substrate with a layer of single crystal rare earth deposited on the surface thereof. A layer of single crystal semiconductor material is grown on the layer of single crystal rare... | 04/08/2008 |
| 7300888 | Methods of manufacturing integrated circuit devices having an encapsulated insulation layer An integrated circuit device is manufactured by forming an insulating layer on a substrate. A capping layer is formed on the insulating layer and both the capping layer and the insulating layer are patterned. Insulating spacers are formed on sidewalls of the insulat... | 11/27/2007 |
| 7294583 | Methods for the use of alkoxysilanol precursors for vapor deposition of SiOfilms A method for depositing conformal dielectric films uses alkoxy silanol or silanediol precursors and oxidizing and/or hydrolyzing agents. The method produces a material with liquid-like flow properties capable of achieving improved high aspect ratio gap fill more eff... | 11/13/2007 |
| 7268088 | Formation of low leakage thermally assisted radical nitrided dielectrics One or more aspects of the present invention relate to forming a dielectric suitable for use as a gate dielectric in a transistor. The gate dielectric is formed by a nitridation process that adds nitrogen to a semiconductor substrate. ... | 09/11/2007 |
| 7265061 | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties Methods and apparatus for preparing a porous low-k dielectric material on a substrate are provided. The methods optionally involve the use of ultraviolet radiation to react with and remove porogen from a porogen containing precursor film leaving a porous dielectric ... | 09/04/2007 |
| 7175713 | Apparatus for cyclical deposition of thin films An apparatus for cyclical depositing of thin films on semiconductor substrates, comprising a process chamber having a gas distribution system with separate paths for process gases and an exhaust system synchronized with operation of valves dosing the process gases i... | 02/13/2007 |
| 7176145 | Manufacturing method of semiconductor device In forming a high density plasma oxide film, a projection shaped like the mesa, the peaked roof, the cone or the like is formed on an element formation region. This projection gives rise to a problem of producing a polishing scar when the CMD (Chemical Mechanical Po... | 02/13/2007 |
| 7163899 | Localized energy pulse rapid thermal anneal dielectric film densification method A densified dielectric film is formed on a substrate by a process that involves annealing a film deposited on the substrate by application of a localized energy pulse, such as a laser pulse, for example one of about 10 to 100 ns in duration from an excimer laser, th... | 01/16/2007 |
| 7157331 | Ultraviolet blocking layer Methods and apparatuses are disclosed relating to blocking ultraviolet electromagnetic radiation from a semiconductor. Ultraviolet electromagnetic radiation, such as ultraviolet electromagnetic radiation generated by a plasma process, which may otherwise damage a se... | 01/02/2007 |
| 7138607 | Determining method of thermal processing condition The invention is a method of determining a set temperature profile of a method of controlling respective substrate temperatures of plurality of groups in accordance with respective corresponding set temperature profiles. The invention includes a first heat processin... | 11/21/2006 |
| 7135418 | Optimal operation of conformal silica deposition reactors Methods of forming conformal films that reduce the amount of metal-containing precursor and/or silicon containing precursor materials required are described. The methods increase the amount of film grown following each dose of metal-containing and/or silicon-contain... | 11/14/2006 |
| 7098079 | Electronic assembly with high capacity thermal interface and methods of manufacture To accommodate high power densities associated with high performance integrated circuits, an integrated circuit package includes a heat-dissipating structure in which heat is dissipated from a surface of one or more dice to an integrated heat spreader (IHS) through ... | 08/29/2006 |
| 7067439 | ALD metal oxide deposition process using direct oxidation Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surpri... | 06/27/2006 |
| 7022628 | Method for forming quantum dots using metal thin film or metal powder Disclosed herein is a method for forming quantum dots, comprising the steps of (a) depositing a metal thin layer onto a substrate, (b) coating a dielectric precursor onto the metal thin layer, and (c) stepwisely heating the resultant substrate; or a method for formi... | 04/04/2006 |
| 6991999 | Bi-layer silicon film and method of fabrication A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure. ... | 01/31/2006 |
| 6977223 | Three dimensional microfabrication Method for making three-dimensional structures. A template is provided having at least two conductive regions separated by a non-conductive region. The template is disposed in an electrolyte in an electrodeposition cell and a voltage is established between one of th... | 12/20/2005 |
| 6949476 | Method of creating shielded structures to protect semiconductor devices An apparatus on a wafer, comprising: a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall comprising: one or more base frames, a fourth metal layer of the wall comprising: one or more vertical frame pairs each on top of th... | 09/27/2005 |
| 6919273 | Method for forming TiSiN film, diffusion preventive film comprising TiSiN film, semiconductor device and its production method, and apparatus for forming TiSiN film A TiSiN film is used as a barrier metal layer for a semiconductor device to prevent the diffusion of Cu. The TiSiN film is formed by a plasma CVD process or a thermal CVD process. TiCl4 gas, a silicon hydride gas and NH3 gas are used as source ... | 07/19/2005 |
| 6893982 | Method for forming a thin film, methods for forming a gate electrode and transistor using the same, and a gate electrode manufactured using the same A method for forming a thin film on a gate electrode reduces oxidation of the gate electrode during a re-oxidation process to fix the damage to the gate oxide film caused during the formation of the gate electrode pattern. The gate electrode pattern formed in this m... | 05/17/2005 |
| 6872972 | Method for forming silicon film with changing grain size by thermal process Roughly described, a silicon layer transitions from polysilicon at one surface to amorphous silicon at the opposite surface. The transition can be monotonic, and can be either continuous or it can change abruptly from polysilicon to amorphous silicon. If such a laye... | 03/29/2005 |
| 6867151 | Mask for sequential lateral solidification and crystallization method using thereof A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from ea... | 03/15/2005 |
| 6818485 | Thin film transistor, thin film transistor array substrate, liquid crystal display device, and electroluminescent display device A thin film transistor having a source region and a drain region having a low melting point region composed of a semiconductor with a melting point lower than that of the semiconductor of the channel region is provided. In the thin film transistor, the dopant concen... | 11/16/2004 |
| 6780789 | Laser thermal oxidation to form ultra-thin gate oxide Ultra-thin gate oxides are formed by exposing the upper surface of a substrate to a pulsed laser light beam in an atmosphere containing oxygen. Embodiments include exposing a silicon substrate to a pulsed laser light beam at a radiant fluence of 0.1 to 0.8 joules/cm... | 08/24/2004 |
| 6774061 | Nanocrystalline silicon quantum dots within an oxide layer A process for forming a thin layer of Silicon nanocrystals in an oxide layer is disclosed. The process includes, on a semiconductive substrate, thermally oxidizing a first portion of the substrate into an oxide layer, forming Silicon ions within the layer of oxide, ... | 08/10/2004 |
| 6770570 | Method of forming a semiconductor device with a substantially uniform density low-k dielectric layer A semiconductor device 100 includes a low-k dielectric insulator 104. In the preferred embodiment, a low-k dielectric material 104 is deposited. This material 104 is then cured using a plasma cure step. The cure process causes the density... | 08/03/2004 |
| 6767773 | Method of Production of a thin film type semiconductor device having a heat-retaining layer An operating semiconductor layer is formed in such a manner that amorphous silicon layer is formed to be shaped so that it has a wide region and a narrow region and the narrow region is connected to the wide region at a position asymmetric to the wide region, and th... | 07/27/2004 |
| 6767799 | Laser beam irradiation method A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is fo... | 07/27/2004 |
| 6756319 | Silica microstructure and fabrication method thereof There is provided a silica microstructure fabrication method. An etch stop layer is first partially deposited on an etching area of a first silica layer formed on a semiconductor substrate. A second silica layer is deposited on the surfaces of the etch stop layer an... | 06/29/2004 |
| 6696369 | Method of creating shielded structures to protect semiconductor devices An apparatus on a wafer, including; a first metal layer of a wall, a second metal layer of the wall, a third metal layer of the wall including; one or more base frames, a fourth metal layer of the wall including; one or more vertical frame pairs each on t... | 02/24/2004 |
| 6660570 | Method of fabricating a high voltage semiconductor device using SIPOS A high voltage semiconductor device including a semiconductor substrate on which a semi-insulating polycrystalline silicon layer is formed to alleviate electric field concentration in a field region, is disclosed. A thermal oxide layer is formed on the se... | 12/09/2003 |
| 6649032 | System and method for sputtering silicon films using hydrogen gas mixtures A method has been provided for forming a polycrystalline silicon (p-Si) film with a small amount of hydrogen. Such a film has been found to have excellent sheet resistance, and it is useful in the fabrication of liquid crystal display (LCD) panels made fr... | 11/18/2003 |
| 6624089 | Wafer planarization using a uniform layer of material and method and apparatus for forming uniform layer of material used in semiconductor processing In connection with wafer planarization, an apparatus for forming a layer of material having a substantially uniform thickness and substantially parallel first and second major surfaces includes a pair of pressing elements and a stop. Each of the pair of p... | 09/23/2003 |
| 6624921 | Micromirror device package fabrication method A window is mounted directly to an upper surface of a micromirror device chip. More particularly, the window is mounted above a micromirror device area on the upper surface of the micromirror device chip by a bead. The window in combination with the bead ... | 09/23/2003 |
| 6566219 | Method of forming a self aligned trench in a semiconductor using a patterned sacrificial layer for defining the trench opening A method of forming a trench can be used in the fabrication of dynamic random access memory (DRAM) cells. In one aspect, a first layer of a first material (e.g., polysilicon) is formed over a semiconductor region (e.g., a silicon substrate). The first lay... | 05/20/2003 |
| 6566277 | Liquid-phase growth method, liquid-phase growth apparatus, and solar cell The present invention provides a method for producing a semiconductor substrate which comprises the steps of growing a first semiconductor layer on a substrate in liquid phase at a properly controlled temperature for eliminating defects and growing a seco... | 05/20/2003 |
| 6492240 | Method for forming improved high resistance resistor by treating the surface of polysilicon layer Performance of the high resistance resistor, which is polysilicon, is improved by treating the surface of the polysilicon layer in mixed signal integrated circuits for ADSL (Asymmetric Digital Subscriber Line) broadband service application. This treated s... | 12/10/2002 |
| 6486045 | Apparatus and method for forming deposited film In order to make possible formation of a deposited film of a relatively large area at a treatment rate which could not accomplished by the plasma process of the prior art, and in order to make possible stable production of the deposited film without varia... | 11/26/2002 |
