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| Number | Title | Issue Date |
| 8138100 | Microelectronic structure by selective deposition A finFET structure includes a semiconductor fin located over a substrate. A gate electrode is located traversing the semiconductor fin. The gate electrode has a spacer layer located adjoining a sidewall thereof. The spacer layer does not cover completely a sidewall ... | 03/20/2012 |
| 8105956 | Methods of forming silicon oxides and methods of forming interlevel dielectrics A method of forming silicon oxide includes depositing a silicon nitride-comprising material over a substrate. The silicon nitride-comprising material has an elevationally outermost silicon nitride-comprising surface. Such surface is treated with a fluid that is at l... | 01/31/2012 |
| 8076249 | Structures containing titanium silicon oxide A dielectric containing a titanium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric provide a dielectric for use in a variety of electronic devices. Embodiments include a dielectric containing a titanium silicon oxid... | 12/13/2011 |
| 8076250 | PECVD oxide-nitride and oxide-silicon stacks for 3D memory application A layer stack of different materials is deposited on a substrate in a single plasma enhanced chemical vapor deposition processing chamber while maintaining a vacuum. A substrate is placed in the processing chamber and a first processing gas is used to form a first l... | 12/13/2011 |
| 8058182 | Surface micromachining process of MEMS ink jet drop ejectors on glass substrates Method and device for forming a membrane includes providing a glass substrate, and depositing a thin layer of chromium on the glass substrate. The thin layer of chromium is patterned to form a deflection electrode and interconnect leads. A sacrificial layer of alumi... | 11/15/2011 |
| 8008213 | Self-assembly process for memory array A method of making a device includes forming at least one anodizable metal layer over at least one of an electrode or a semiconductor device, forming a plurality of pores in the anodizable metal layer by anodization of the anodizable metal layer to expose a portion ... | 08/30/2011 |
| 7964513 | Method to form ultra high quality silicon-containing compound layers Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon p... | 06/21/2011 |
| 7960292 | Method of fabricating zinc oxide film having matching crystal orientation to silicon substrate A zinc oxide (ZnO) film is fabricated. Metal-organic chemical vapor deposition (MOCVD) is used to obtain the film with few defects, high integrity and low cost through an easy procedure. The ZnO film above a silicon substrate has a matching crystal orientation to th... | 06/14/2011 |
| 7923379 | Multi-step process for forming high-aspect-ratio holes for MEMS devices A method of forming an integrated circuit structure includes forming an opening in a substrate, with the opening extending from a top surface of the substrate into the substrate. The opening is filled with a filling material until a top surface of the filling materi... | 04/12/2011 |
| 7923378 | Film formation method and apparatus for forming silicon-containing insulating film A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film ... | 04/12/2011 |
| 7867914 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 01/11/2011 |
| 7863199 | Methods of forming particle-containing materials The invention includes methods of forming particle-containing materials, and also includes semiconductor constructions comprising particle-containing materials. One aspect of the invention includes a method in which a first monolayer is formed across at least a port... | 01/04/2011 |
| 7858531 | Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel region A method of forming a semiconductor structure comprises providing a semiconductor substrate comprising at least one transistor element. An etch stop layer is formed over the transistor element. A stressed first dielectric layer is formed over the etch stop layer. A ... | 12/28/2010 |
| 7851380 | Process for atomic layer deposition The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic lay... | 12/14/2010 |
| 7816280 | Semiconductor device, semiconductor wafer, and methods of producing the same device and wafer A method of forming a multi-layered insulation film includes forming a first insulation layer using a first feed gas, the first insulation layer including methyl silsesquioxane (MSQ), forming a second insulation layer using a second feed gas, the second insulation l... | 10/19/2010 |
| 7811944 | Semiconductor device and a method of manufacture therefor The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the aforementioned semiconductor device. The semiconductor device, in accordance with the principles of the present invention, may include a ... | 10/12/2010 |
| 7772127 | Semiconductor heterostructure and method for forming same The invention relates to a method for forming a semiconductor heterostructure by providing a substrate with a first in-plane lattice parameter a1, providing a buffer layer with a second in-plane lattice parameter a2 and providing a top layer ov... | 08/10/2010 |
| 7772128 | Semiconductor system with surface modification A semiconductor system includes: providing a dielectric layer; providing a conductor in the dielectric layer, the conductor exposed at the top of the dielectric layer; capping the exposed conductor; and modifying the surface of the dielectric layer, modifying the su... | 08/10/2010 |
| 7767591 | Method and device for producing electronic components The invention relates to a method for producing electronic components in a vacuum. The aim of the invention is to create flexible electronic components that have an optimum action, are cost-effective, and easy to produce in a single working cycle. To this end, a car... | 08/03/2010 |
| 7759259 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device including heating a semiconductor substrate, has forming a cap film on a surface of said semiconductor substrate; selectively removing said cap film at least from an upper surface of an edge of said semiconductor subs... | 07/20/2010 |
| 7737049 | Method for forming a structure on a substrate and device In one aspect, a method of forming a structure on a substrate is disclosed. For example, the method includes forming a first mask layer and a second mask layer, modifying a material property in regions of the first and second mask layers, and forming the structure b... | 06/15/2010 |
| 7737048 | Method for controlling thickness distribution of a film A method for forming an oxide film includes a first in-situ steam generation (ISSG) process using a 1%-H2 concentration in the ambient gas and a subsequent second ISSG process using a 5%-H2 concentration in the ambient gas, wherein the second I... | 06/15/2010 |
| 7696106 | Film formation method and apparatus for semiconductor process A film formation method for a semiconductor process includes placing a plurality of target objects at intervals in a vertical direction inside a process container of a film formation apparatus. Then, the method includes setting the process container to have a first ... | 04/13/2010 |
| 7687409 | Atomic layer deposited titanium silicon oxide films A dielectric layer containing an atomic layer deposited titanium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric layer provide a dielectric layer for use in a variety of electronic devices. Embodiments include formi... | 03/30/2010 |
| 7674721 | Semiconductor device, semiconductor wafer, and methods of producing same device and wafer A method of forming a multi-layered insulation film includes forming a first insulation layer using a first feed gas, the first insulation layer including methyl silsesquioxane (MSQ), forming a second insulation layer using a second feed gas, the second insulation l... | 03/09/2010 |
| 7670961 | Reduction of cracking in low-k spin-on dielectric films The present invention relates to a process that minimizes the cracking of low-k dielectric polymers. In an example embodiment, on a semiconductor substrate (200), there is a method of forming a composite dielectric disposed on a metal layer passivated with plasma de... | 03/02/2010 |
| 7651953 | Method to form ultra high quality silicon-containing compound layers Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon p... | 01/26/2010 |
| 7651954 | Manufacturing method of semiconductor device and semiconductor device manufacturing apparatus To provide a manufacturing method of a semiconductor device for forming a diffusion layer by diffusing phosphorus atoms on a surface of a silicon substrate on which resist is applied, including the step of forming a diffusion layer, with a temperature of the silicon... | 01/26/2010 |
| 7648922 | Fluorocarbon film and method for forming same The major objective is to provide a fluorocarbon film wherein fine voids are formed by a step (SA1) for introducing a mixed gas containing a first carbon fluoride gas and a second carbon fluoride gas on a substrate placed inside a chamber, and depositing a fluorocar... | 01/19/2010 |
| 7645708 | Shadow mask deposition of materials using reconfigurable shadow masks A shadow mask deposition system includes a plurality of identical shadow masks arranged in a number of stacks to form a like number of compound shadow masks, each of which is disposed in a deposition vacuum vessel along with a material deposition source. Materials f... | 01/12/2010 |
| 7632760 | Semiconductor device having field stabilization film and method In one embodiment, a high voltage semiconductor device is formed with a first dielectric layer and a charge stabilization layer comprising a flowable glass formed over the first dielectric layer. ... | 12/15/2009 |
| 7601648 | Method for fabricating an integrated gate dielectric layer for field effect transistors Methods for forming a integrated gate dielectric layer on a substrate are provided. In one embodiment, the method includes forming a silicon oxide layer on a substrate, plasma treating the silicon oxide layer, depositing a silicon nitride layer on the silicon oxide ... | 10/13/2009 |
| 7592269 | Method and apparatus for depositing charge and/or nanoparticles A method of forming a charge pattern includes treating a stamp layer with a plasma, applying the treated stamp layer to a surface of a substrate to thereby form a charge pattern on the surface of the substrate, and separating the stamp layer from the surface of the ... | 09/22/2009 |
| 7592268 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided. The method includes: forming a plurality of gate lines on a substrate by performing an etching process; forming an oxide layer on the gate lines and the substrate by employing an atomic layer deposition (A... | 09/22/2009 |
| 7569495 | Semiconductor devices and methods of manufacturing the same Semiconductor devices and methods of manufacturing the same are disclosed. In a disclosed method, a dangling bond in the active region(s) is removed by providing an enough H2 in the PMD liner layer and the interlayer insulating layer directly contacting t... | 08/04/2009 |
| 7557047 | Method of forming a layer of material using an atomic layer deposition process Disclosed is a method of forming a layer of material using an atomic layer deposition (ALD) process in a process chamber of a process tool. In one illustrative embodiment, the method includes identifying a target characteristic for the layer of material, determining... | 07/07/2009 |
| 7550397 | Method of manufacturing a semiconductor device having a pre-metal dielectric liner Embodiments relate to a semiconductor device and a method of manufacturing a semiconductor device having a pre-metal dielectric liner. In embodiments, method for forming a semiconductor device may include forming a pre-metal dielectric liner, which has a multi-layer... | 06/23/2009 |
| 7501351 | Relaxed SiGe platform for high speed CMOS electronics and high speed analog circuits Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform. The relaxed SiGe allows for a plethora of strained Si layers that possess enhanced electronic properties. ... | 03/10/2009 |
| 7491651 | Method of forming thick silica-based film A silica-based coating film on a substrate surface is prepared by forming a reaction mixture comprising a tetraalkoxysilicon compound (A) and/or an alkyl/alkoxy silane compound (B), an alcohol (C), and oxalic acid (D), in such ratios that the amount of alcohol (C) r... | 02/17/2009 |
| 7476626 | Etch stop layer for a metallization layer with enhanced etch selectivity and hermeticity By providing a barrier layer stack including a silicon nitride layer for confining a copper-based metal region, thereby also effectively avoiding any diffusion of oxygen and moisture into the copper region, and a nitrogen-enriched silicon carbide layer, the total re... | 01/13/2009 |
