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Behavior Modification Wristwatch
A wristwatch including a watch band and a watch body having an octagon shaped perimeter and being red in color and having the word STOP thereon to resemble a stop sign.
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| Number | Title | Issue Date |
| 8318612 | Methods for improving the quality of group III-nitride materials and structures produced by the methods The invention provides methods which can be applied during the epitaxial growth of two or more layers of Group III-nitride semiconductor materials so that the qualities of successive layer are successively improved. In preferred embodiments, surface defects interact... | 11/27/2012 |
| 8227355 | Method and apparatus of fabricating semiconductor device An underlying film forming section forming an underlying film on a semiconductor substrate is provided to an apparatus of fabricating a semiconductor device. The apparatus is further provided with a cooling section cooling the semiconductor substrate and a plasma ni... | 07/24/2012 |
| 8053372 | Method of reducing plasma stabilization time in a cyclic deposition process The present invention relates to an enhanced cyclic deposition process suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and... | 11/08/2011 |
| 7928017 | Method of forming nanowire and method of manufacturing semiconductor device comprising the nanowire A method of forming a nanowire and a semiconductor device comprising the nanowire are provided. The method of forming a nanowire includes forming a patterned SiyGe1-y layer (where, y is a real number that satisfies 0≦y | 04/19/2011 |
| 7875559 | Method of manufacturing P-type ZnO semiconductor layer using atomic layer deposition and thin film transistor including the P-type ZnO semiconductor layer Provided are a method of manufacturing a transparent N-doped p-type ZnO semiconductor layer using a surface chemical reaction between precursors containing elements constituting thin layers, and a thin film transistor (TFT) including the p-type ZnO semiconductor lay... | 01/25/2011 |
| 7737047 | Semiconductor constructions, and methods of forming dielectric materials Some embodiments include methods of forming dielectric materials associated with semiconductor constructions. A semiconductor substrate surface having two different compositions may be exposed to a first silanol, then to organoaluminum to form a monolayer, and final... | 06/15/2010 |
| 7709399 | Atomic layer deposition systems and methods including metal β-diketiminate compounds The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates. ... | 05/04/2010 |
| 7592267 | Method for manufacturing semiconductor silicon substrate and apparatus for manufacturing the same This invention provides a method for manufacturing a semiconductor silicon substrate by use of carbon dioxide in a supercritical state, which method is capable of making the semiconductor silicon substrate highly reliable one. Specifically, this invention provides a... | 09/22/2009 |
| 7569494 | Apparatus and method for deposition of thin films An apparatus for forming a multicomponent thin film, such as a superconducting thin film, on a substrate includes a holder for holding at least one substrate and a deposition/reaction vessel. The deposition/reaction vessel has at least three zones, each zone being s... | 08/04/2009 |
| 7566667 | Methods of fabricating a semiconductor device having a barrier metal layer and devices formed thereby A semiconductor device is formed by forming a gate region, including a gate oxide layer, and impurity diffusion regions on a semiconductor substrate, forming a barrier metal layer on the gate region and the impurity diffusion regions of the semiconductor substrate, ... | 07/28/2009 |
| 7553775 | Method for coating semiconductor surface, process for production of semiconductor particles using said method, and optical element using said semiconductor particles The present invention provides a method for coating a group 4 semiconductor surface composed mainly of a group 4 semiconductor elements and a process for producing group 4 semiconductor particles having a luminescent capability and semiconductor... | 06/30/2009 |
| 7416994 | Atomic layer deposition systems and methods including metal beta-diketiminate compounds The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates. ... | 08/26/2008 |
| 7405120 | Method of forming a gate insulator and thin film transistor incorporating the same Disclosed herein is a method of manufacturing a gate insulator and a thin film transistor (“TFT”) incorporating the gate insulator, including forming an oxygen-containing, conductive gate on a substrate; forming a gate insulator material layer on the substrate s... | 07/29/2008 |
| 7393785 | Methods and apparatus for forming rhodium-containing layers A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for c... | 07/01/2008 |
| 7384880 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises converting a hydrophobic surface of a substrate into a hydrophilic surface, and forming a high-k gate dielectric layer on the hydrophilic surface. ... | 06/10/2008 |
| 7371647 | Methods of forming transistors The invention encompasses a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nit... | 05/13/2008 |
| 7371628 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided. The method mainly involves steps of forming at least one first patterned high stress layer below a silicon substrate, then forming a semiconductor device onto the substrate, and forming at least one second... | 05/13/2008 |
| 7368400 | Method for forming oxide film in semiconductor device The present invention relates to a method for forming an oxide film in semiconductor devices. According to the present invention, after an oxide film is formed, interface trap charge and oxide trap charge can be reduced through a high-temperature thermal treatment p... | 05/06/2008 |
| 7368751 | Method of manufacturing an electronic device comprising a thin film transistor A method of manufacturing an electronic device comprising a thin film transistor (42), comprises forming a hydrogen-containing layer (22) over a semiconductor layer (10;20), irradiating the hydrogen-containing layer so as to hydrogenate the semi... | 05/06/2008 |
| 7355672 | Method for the removal of deposition on an optical element, method for the protection of an optical element, device manufacturing method, apparatus including an optical element, and lithographic apparatus A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2... | 04/08/2008 |
| 7348282 | Forming method of gate insulating layer and nitrogen density measuring method thereof A method of forming a gate insulating layer and nitrogen density measuring method thereof, by which a transistor having enhanced electric characteristics can be fabricated without employing separate ion implantation in a manner of providing parameters for enhancing ... | 03/25/2008 |
| 7348205 | Method of forming resistance variable devices A method of forming a resistance variable device includes forming a first conductive electrode material on a substrate. A metal doped chalcogenide comprising material is formed over the first conductive electrode material. Such comprises the metal and AxB... | 03/25/2008 |
| 7349196 | Composite distributed dielectric structure A composite distributed dielectric structure includes one or more conductor layers, one or more dielectric layers distributed on the conductor layers, and one or more conductor traces distributed on the dielectric layers. One or more dielectric plates can be further... | 03/25/2008 |
| 7344913 | Spin on memory cell active layer doped with metal ions A method of making organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The controllably conductive media contains an active layer and passive layer. The active layer is formed using spin on techni... | 03/18/2008 |
| 7338826 | Silicon nitride passivation with ammonia plasma pretreatment for improving reliability of AlGaN/GaN HEMTs This invention pertains to an electronic device and to a method for making it. The device is a heterojunction transistor, particularly a high electron mobility transistor, characterized by presence of a 2 DEG channel. Transistors of this invention contain an AlGaN b... | 03/04/2008 |
| 7335606 | Silicide formed from ternary metal alloy films A NiSi layer over silicon that is thermally stable and can form even in the presence of oxides. The method of fabricating the nickel silicide layer includes providing a substrate comprising silicon, depositing a layer of at least a 3-component metal alloy comprising... | 02/26/2008 |
| 7332198 | Plating apparatus and plating method There is provided a plating apparatus and method which can control the temperature of a plating solution during plating more uniformly and easily form a uniform plated film on the to-be-plated surface of a workpiece, and which can simplify the device and decrease th... | 02/19/2008 |
| 7333544 | Lossless image encoding/decoding method and apparatus using inter-color plane prediction A lossless image encoding/decoding method and apparatus. The lossless color image encoding apparatus includes a motion prediction image generator estimating a motion between a previous image and a current image and outputting a corresponding prediction image, a resi... | 02/19/2008 |
| 7326657 | Post-deposition treatment to enhance properties of Si-O-C low k films A method for providing a dielectric film having enhanced adhesion and stability. The method includes a post deposition treatment that densifies the film in a reducing atmosphere to enhance stability if the film is to be cured ex-situ. The densification generally tak... | 02/05/2008 |
| 7319068 | Method of depositing low k barrier layers A method is provided for processing a substrate including providing a processing gas comprising an organosilicon compound comprising a phenyl group to the processing chamber, and reacting the processing gas to deposit a low k silicon carbide barrier layer useful as ... | 01/15/2008 |
| 7312163 | Atomic layer deposition methods, and methods of forming materials over semiconductor substrates The invention includes methods in which at least two different precursors are flowed into a reaction chamber at different and substantially non-overlapping times relative to one another to form a material over at least a portion of a substrate, and in which at least... | 12/25/2007 |
| 7312156 | Method and apparatus for supporting a semiconductor wafer during processing A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas ... | 12/25/2007 |
| 7304002 | Method of oxidizing member to be treated A method for oxidation of an object to be processed is provided wherein an oxide film can provide favorable film quality and a laminate structure of nitride film and oxide film can be obtained by a thermal oxidation of a nitride film. In a method for oxidatio... | 12/04/2007 |
| 7300855 | Reversible oxidation protection of microcomponents In a method for the reversible oxidation protection of microcomponents, a substrate is provided, a silicon nitride layer is provided on the substrate in order to protect it against oxidation, an insulation layer is applied to the silicon nitride layer, and a reoxida... | 11/27/2007 |
| 7291566 | Barrier layer for a processing element and a method of forming the same In order to mitigate erosion of exposed processing elements in a processing system by the process and any subsequent contamination of the substrate in the processing system, processing elements exposed to the process are coated with a protective barrier. The protect... | 11/06/2007 |
| 7288203 | Process for producing structure, process for producing magnetic recording medium, and process for producing molded product A process for producing a structure having a porous layer is provided. The process forms the porous layer with high thickness-controllability. The process comprises steps of preparing a layered product having, on a substrate, a first nonporous layer and a second non... | 10/30/2007 |
| 7279432 | System and method for forming an integrated barrier layer An apparatus and method for forming an integrated barrier layer on a substrate is described. The integrated barrier layer comprises at least a first refractory metal layer and a second refractory metal layer. The integrated barrier layer is formed using a dual-mode ... | 10/09/2007 |
| 7271077 | Deposition methods with time spaced and time abutting precursor pulses An atomic layer deposition method includes positioning a semiconductor substrate within an atomic layer deposition chamber. A first precursor gas is flowed to the substrate within the atomic layer deposition chamber effective to form a first monolayer on the substra... | 09/18/2007 |
| 7271463 | Trench insulation structures including an oxide liner that is thinner along the walls of the trench than along the base A method of depositing dielectric material into sub-micron spaces and resultant structures is provided. After a trench is etched in the surface of a wafer, a liner layer preferably is deposited into the trench. An anisotropic plasma process is then performed on the ... | 09/18/2007 |
| 7259043 | Circular test pads on scribe street area A semiconductor wafer design and process having test pads (36) reducing cracks generated during the wafer saw process from extending into and damaging adjacent die. The present invention provides a plurality of circular test pads (36) in a wafer scribe... | 08/21/2007 |
