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| Number | Title | Issue Date |
| 7351598 | Solid-stage image pickup device and method for producing the same A solid-state image pickup device includes an element isolation insulating film electrically isolating pixels on the surface of a well region; a first isolation diffusion layer electrically isolating the pixels under the element isolation insulating film; and a seco... | 04/01/2008 |
| 7342276 | Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme... | 03/11/2008 |
| 7270713 | Tunable gas distribution plate assembly A gas distribution plate assembly and a method for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution plate assembly includes a tuning plate coupled to a diffuser plate. The tuning plate has a plurality of orifice holes form... | 09/18/2007 |
| 7217626 | Transistor fabrication methods using dual sidewall spacers Methods (50) are presented for transistor fabrication, in which first and second sidewall spacers (120a, 120b) are formed laterally outward from a gate structure (114), after which a source/drain region (116) is impla... | 05/15/2007 |
| 7186595 | Solid picture element manufacturing method A solid picture element that transfers charges completely from a photodiode portion to an amplifying transistor portion to substantially eliminate residual images and methods of its manufacture are disclosed. The solid picture element includes a buried photodiode an... | 03/06/2007 |
| 7157754 | Solid-state imaging device and interline transfer CCD image sensor A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stor... | 01/02/2007 |
| 6927091 | Method for fabricating solid-state imaging device Disclosed is a method for fabricating a solid-state imaging device including a semiconductor substrate of a first conductivity type, a plurality of light-receiving sections provided at a distance in the surface region of the semiconductor substrate, and channel stop... | 08/09/2005 |
| 6913980 | Process method of source drain spacer engineering to improve transistor capacitance A method of forming an associated transistor is presented whereby short channel effects and junction capacitances are mitigated and enhanced switching speeds are thereby facilitated. Compensation regions are formed within a substrate by implanting dopants relatively... | 07/05/2005 |
| 6902945 | Tapered threshold reset FET for CMOS imagers A sensor may be formed with a transistor comprising a gate that has both n-type and p-type regions to increase the gate work function. In combination with moving the p-type well such that the p-type well only partially dopes the channel of the transistor, the increa... | 06/07/2005 |
| 6852565 | CMOS image sensor with substrate noise barrier An image sensor element includes a vertical overflow drain structure to eliminate substrate charge diffusion causing CMOS image sensor noise. An extra chemical mechanical polish step used to shorten the micro-lens to silicon surface distance in order to reduce optic... | 02/08/2005 |
| 6833282 | Method of forming an optical sensor device having a composite sandwich structure of alternating titanium and titanium nitride layers In order to make a charge couple device including an interconnect layer to contact active areas, a first layer of a first titanium nitride layer on the active areas, and then a series of alternating titanium and titanium nitride layers are deposited to form a compos... | 12/21/2004 |
| 6794219 | Method for creating a lateral overflow drain, anti-blooming structure in a charge coupled device A method for creating a lateral overflow drain, anti-blooming structure in a charge-coupled device, the method includes the steps of providing a substrate of a first conductivity type; providing a layer of silicon dioxide on the substrate; providing a layer of silic... | 09/21/2004 |
| 6657716 | Method and apparatus for detecting necking over field/active transitions A method and an apparatus for detecting a necking error during semiconductor manufacturing. At least one semiconductor wafer is processed. Metrology data from the processed semiconductor wafer is acquired. Data from a reference library comprising optical ... | 12/02/2003 |
| 6210990 | Method for fabricating solid state image sensor Method for fabricating a solid state image sensor, which can improve a charge transfer efficiency of an end terminal, including the steps of (1) providing a first conduction type substrate having a second conduction type well and a BCCD formed therein for... | 04/03/2001 |
| 6194748 | MOSFET with suppressed gate-edge fringing field effect A method of fabricating an integrated circuit with less susceptibility to gate-edge fringing field effect is disclosed. The transistor includes a low-k dielectric spacer and a high-k gate dielectric. The high-k gate dielectric can be tantalum pentaoxide o... | 02/27/2001 |
| 5981309 | Method for fabricating charge coupled device image sensor A method for fabricating a CCD image sensor includes the steps of forming a P type well in a surface of a semiconductor substrate, forming a buried CCD (BCCD) in a surface of the P type well, forming an offset gate and a reset gate on the BCCD at a predet... | 11/09/1999 |
| 5943556 | Method for manufacturing an electric charge transfer device In a method for manufacturing a charge transfer device, an N type semiconductor region is formed in a principal surface of a P type semiconductor substrate, to constitute a transfer channel of the charge transfer device. A silicon oxide film is formed to ... | 08/24/1999 |
| 5877520 | Trench lateral overflow drain antiblooming structure for virtual phase charge coupled devices with virtual gate element The lateral overflow drain for charge coupled devices includes: a semiconductor region 70 of a first conductivity type having a trench 92; a drain region 24 of a second conductivity type below the trench 92; a gate 20 in the trench 92 overlying and separa... | 03/02/1999 |
| 5858812 | Method for fabricating interline-transfer CCD image sensor A solid-state image sensor has a photodiode region, a vertical CCD register for transferring a charge received at the photodiode region, a read-out gate region for reading the charge out to the vertical CCD register, and an element isolation region for is... | 01/12/1999 |
| 5837563 | Self aligned barrier process for small pixel virtual phase charged coupled devices The method for making a charge coupled device includes: forming a semiconductor region 24 of a first conductivity type; forming gate regions 28 and 30 overlying and separated from the semiconductor region 24; forming clocked barrier implants 36 and 38 of ... | 11/17/1998 |
| 5804465 | Compact isolation and antiblooming structure for full-frame CCD image sensors operated in the accumulation mode By introducing an n-type drain implant substantially below the surface of the p-type substrate of a full frame image sensor, then enclosing the drain on the bottom and the sides with a deep p-type implant, and accumulating the surface with a shallow p-typ... | 09/08/1998 |
| 5702971 | Self-aligned LOD antiblooming structure for solid-state imagers A self aligned, lateral-overflow drain antiblooming structure that is insensitive to drain bias voltages and therefore has improved insensitivity to process variations. The length of the antiblooming barrier regions are easily adjusted and determined by p... | 12/30/1997 |
| 5679597 | Method for manufacturing CCD image pickup device A method for manufacturing a CCD (charge coupled device) image pickup device includes (1) forming a P well and a field oxide layer upon an N type substrate, forming a buried CCD channel, and a photo diode; (2) forming a gate insulating layer and gate elec... | 10/21/1997 |
| 5607872 | Method of fabricating charge coupled device Charge couples devices and methods for the fabrication of the same are disclosed. The charge coupled device is structured to comprise: a first electrode consisting of a first region and second region having lower resistance than the first region; and a se... | 03/04/1997 |
| 5593910 | Charge detection device, a method for producing the same, and a charge transfer and detection apparatus including such a charge detection device A charge detection device for converting a signal charge consisting of carriers of a first polarity externally provided into a voltage signal, the charge detection device comprising a MOS transistor, the MOS transistor including: a first semiconductor lay... | 01/14/1997 |
| 5583071 | Image sensor with improved output region for superior charge transfer characteristics The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases... | 12/10/1996 |
| 5578511 | Method of making signal charge transfer devices A method of making a signal charge transfer device, including the steps of: forming first conductivity-type channel regions (30) in each of second conductivity-type wells (20) formed in a first conductivity-type semiconductor substrate (10); forming a plu... | 11/26/1996 |
| 5516714 | Method of making output terminal of a solid-state image device A solid-state image device for outputting the charges transferred in one direction by given transfer clock is disclosed. It has a detection port for finally providing signal charges, a first active region of first conductivity for receiving the transferre... | 05/14/1996 |
| 5488010 | Method of fabricating sidewall charge-coupled device with trench isolation A charge-coupled imaging device comprising a plurality of trenches in the surface of the silicon substrate which separate adjacent columns in the CCD device. A plurality of surface electrodes are provided on the surface of the charge-coupled device extend... | 01/30/1996 |
| 5441910 | Method for manufacturing CCD type solid image pickup device using self-alignment process An impurity doped region for a vertical transfer portion is formed by using a first mask pattern layer. An impurity doped region for a horizontal transfer portion is formed by using a second mask pattern layer which is formed by using the first mask patte... | 08/15/1995 |
| 5369039 | Method of making charge coupled device/charge super sweep image system Described is a new high performance CCD image sensor technology which can be used to build a versatile image senor family with the sensors that have high resolution and high pixel density. The described sensor architectures are based on a new charge super... | 11/29/1994 |
| 5202282 | Method for producing a self-alignment type CCD sensor A process for producing a CCD image sensor comprising the steps of: providing a light-receiving photo-diode region and a VCCD transmission region by injecting ions into a substrate at a predetermined distance, the injected ions being different in type fro... | 04/13/1993 |
| 5185271 | Method of manufacturing a buried-channel charge-coupled image sensor In a method of manufacturing a raster transfer image sensor, the charge transport channels and the channel-bounding regions and the vertical anti-blooming channels are formed in a self-registering manner in that the channel-bounding regions are provided v... | 02/09/1993 |
| 5151380 | Method of making top buss virtual phase frame interline transfer CCD image sensor In one embodiment of the invention, a method for fabricating a virtual phase image sensor is disclosed comprising the steps of forming a semiconductor substrate of a first conductivity type, forming a buried channel region of a second conductivity type in... | 09/29/1992 |
| 5134087 | Fabricating a two-phase CCD imager cell for TV interlace operation A CCD imager cell (36, 38) is formed at a face of a semiconductor substrate (10) and has first (36) and second (38) phase regions. A first clocked well (14) is provided for receiving charge integrated in the first phase region (36). A second clocked well ... | 07/28/1992 |
| 5118631 | Self-aligned antiblooming structure for charge-coupled devices and method of fabrication thereof A self-aligned element antiblooming structure for application to charge-coupled devices includes a region in the substrate in which the charge-coupled device is fabricated into which both a P and an N conductivity type impurity are introduced. By introduc... | 06/02/1992 |
| 5086010 | Method for manufacturing solid state image sensing device formed of charge coupled devices on side surfaces of trenches A solid state image sensing device comprises photoelectric converting portions (8) and charge coupled portions. A plurality of parallel trenches (2) are formed on a main surface of a semiconductor substrate (1). Photoelectric converting portions are on th... | 02/04/1992 |
| 4992392 | Method of making a virtual phase CCD A virtual phase CCD is fabricated in a semiconductor substrate of n-type conductivity having a layer of silicon dioxide on a surface by first forming a channel region by the implantation of boron ions. Masking regions of polycrystalline silicon are then f... | 02/12/1991 |
| 4952523 | Process for fabricating charge-coupled device with reduced surface state at semiconductor-insulator interface To reduce the dark current to be produced in a semiconductor charge-coupled device, the device is fabricated by preparing a layer of a doped semiconductor having an insulator layer thereon, forming a plurality of transfer electrodes on said insulator laye... | 08/28/1990 |
| 4892842 | Method of treating an integrated circuit An integrated circuit formed in a semiconductor die which has at least two distinct functional regions is treated by mounting the die by way of its front face on a support member, and subsequently removing die material by way of its back face so as to phy... | 01/09/1990 |
