Class 438/758 - COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes for forming or applying a coating on a semiconductor
No. of patents: 1262
Last issue date: 05/15/2012

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Number	Title	Issue Date
8178445	Substrate processing apparatus and manufacturing method of semiconductor device using plasma generation A manufacturing method for a semiconductor device, that loads a substrate on which a film containing oxygen atoms, chlorine atoms, and metal atoms is formed into a processing chamber so as to be supported by a substrate support part. The substrate is heated by the s...	05/15/2012
8173551	Defect reduction using aspect ratio trapping Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls. ...	05/08/2012
8153534	Direct oxidation method for semiconductor process An oxidation method for performing direct oxidation includes respectively supplying an oxidizing gas and a deoxidizing gas to the process field, and directly oxidizing a surface target substrates by use of oxygen radicals and hydroxyl group radicals generated by a r...	04/10/2012
8093158	Semiconductor device manufacturing method and substrate processing apparatus Provided are a semiconductor device manufacturing method and a substrate processing apparatus. The method comprise: a first process of forming a film containing a predetermined element on a substrate by supplying a source gas containing the predetermined element to ...	01/10/2012
8084368	Method of forming barrier film A barrier film made of a ZrB2 film is formed by use of a coating apparatus provided with plasma generation means including a coaxial resonant cavity and a microwave supply circuit for exciting the coaxial resonant cavity, the coaxial resonant cavity inclu...	12/27/2011
8080481	Method of manufacturing a nanowire device The present invention provides a method for manufacturing a semiconductor nanowire device in mass production at a low cost without an additional complex nanowire alignment process or SOI substrate by forming a single crystal silicon nanowire with a simple process wi...	12/20/2011
8043975	Silicon dioxide deposition methods using at least ozone and TEOS as deposition precursors Embodiments disclosed herein pertain to silicon dioxide deposition methods using at least ozone and tetraethylorthosilicate (TEOS) as deposition precursors. In one embodiment, a silicon dioxide deposition method using at least ozone and TEOS as deposition precursors...	10/25/2011
8034723	Film deposition apparatus and film deposition method A film deposition apparatus for depositing a film on a substrate by performing a cycle of alternately supplying at least two kinds of reaction gases that react with each other on the substrate to produce a layer of a reaction product in a vacuum chamber is disclosed...	10/11/2011
8030219	Dielectric coatings and use in capacitors A coated substrate product is described comprising a substrate and a dielectric coating material comprising carbon, hydrogen, silicon, and oxygen. According to the method, the substrate is processed by plasma cleaning the surface and then depositing a dielectric coa...	10/04/2011
8021987	Method of modifying insulating film An insulting film is modified by subjecting the insulting film to a modification treatment comprising a combination of a plasma treatment and a thermal annealing treatment. There is provided a method of enhancing the characteristic of an insulating film by improving...	09/20/2011
8012884	Semiconductor device manufacturing method and semiconductor device manufacturing apparatus A predicted film formation rate value is computed based on a film formation rate prediction formula obtained in advance and apparatus parameters obtained during a previously-performed film formation process. A processing time required for an amount of film formed on...	09/06/2011
8003546	Method of growing silicon and method of manufacturing solar cell using the same In a method of growing silicon (Si) using a reactor, a supercritical fluid including a silicon Si source and hydrogen flows in the reactor, and the Si source reacts with hydrogen. A base substrate of a solar cell may be formed with Si made using the method of growin...	08/23/2011
7994068	Method for fabricating a 3-D integrated circuit using a hard mask of silicon-oxynitride on amorphous carbon A method for fabricating a 3-D monolithic memory device. Silicon-oxynitride (SixOyNz) on amorphous carbon is used an effective, easily removable hard mask with high selectivity to silicon, oxide, and tungsten. A silicon-oxynitride la...	08/09/2011
7989358	Prevention of backside cracks in semiconductor chips or wafers using backside film or backside wet etch A method of preventing the formation of cracks on the backside of a silicon (Si) semiconductor chip or wafer during the processing thereof. Also provided is a method for inhibiting the propagation of cracks, which have already formed in the backside of a silicon chi...	08/02/2011
7977252	Method of formation of coherent wavy nanostructures (variants) The method for forming wavelike coherent nanostructures by irradiating a surface of a material by a homogeneous flow of ions is disclosed. The rate of coherency is increased by applying preliminary preprocessing steps. ...	07/12/2011
7972971	Method for producing SiGebased zones with different contents in Ge on a same substrate by condensation of germanium The disclosure relates to a method for producing a microelectronic device including a plurality of Si1-yGey based semi-conducting zones (where 0	07/05/2011
7960291	Porous organosilicate layers, and vapor deposition systems and methods for preparing same The present invention provides porous organosilicate layers, and vapor deposition systems and methods for preparing such layers on substrates. The porous organosilicate layers are useful, for example, as masks. ...	06/14/2011
7960290	Method of fabricating a semiconductor device A method for fabricating a semiconductor device. A preferred embodiment comprises forming a via in a semiconductor substrate, filling the via with a disposable material such as amorphous carbon, forming a dielectric layer on the substrate covering the via, performin...	06/14/2011
7955990	Method for improved thickness repeatability of PECVD deposited carbon films Provided herein are improved methods of depositing carbon-based films using acetylene as a precursor. The methods involve using a low-vapor pressure solvent, e.g., dimethylfluoride (DMF) to stabilize the acetylene and delivering the acetylene to a deposition chamber...	06/07/2011
7943528	Substrate processing apparatus and semiconductor devices manufacturing method Substrate processing of a substrate is performed in a processing chamber and the evenness in in-plane film thickness is enhanced. An exhaust unit exhausts the atmosphere in the processing chamber and a processing gas is supplied that is excited by an exciting unit. ...	05/17/2011
7943527	Surface preparation for thin film growth by enhanced nucleation Various processes and related systems are provided for making structures on substrate surfaces. Disclosed are methods of making a structure supported by a substrate by providing a substrate having a receiving surface and exposing at least a portion of the receiving ...	05/17/2011
7939455	Method for forming strained silicon nitride films and a device containing such films A method for forming a strained SiN film and a semiconductor device containing the strained SiN film. The method includes exposing the substrate to a gas including a silicon precursor. The substrate is exposed to a gas including a first nitrogen precursor configured...	05/10/2011
7932185	Process for fabricating semiconductor device A laser annealing process capable of suppressing a variation in sheet resistance. A surface layer formed shallower than 100 nm in a substrate of semiconductor material is added with impurities. The substrate is irradiated with a laser beam or its harmonic beam emitt...	04/26/2011
7932186	Methods for fabricating an electronic device A method for fabricating an electronic device is provided. The method for fabricating the electrical device comprises providing a substrate. A patterned first self-assembled monolayer (SAM) and an adjacent patterned second SAM are formed on the substrate, wherein th...	04/26/2011
7923376	Method of reducing defects in PECVD TEOS films The present invention provides high deposition rate PECVD methods for depositing TEOS films. The methods significantly reduce the number of particles in the TEOS films, thereby eliminating or minimizing defects. According to various embodiments, the methods involve ...	04/12/2011
7923377	Method for forming amorphous carbon film An amorphous carbon film forming apparatus includes a supporting electrode that is connected to ground and supports a substrate, a counter electrode that is disposed so as to face the supporting electrode and has a mixed-gas injection orifice, a chamber containing t...	04/12/2011
7915177	Method of forming gate insulation film, semiconductor device, and computer recording medium In the present invention, when a gate insulation film in a DRAM is formed, an oxide film constituting a base of the gate insulation film is plasma-nitrided. The plasma nitridation is performed with microwave plasma generated by using a plane antenna having a large n...	03/29/2011
7910492	Nanowhiskers with PN junctions, doped nanowhiskers, and methods for preparing them Nano-engineered structures are disclosed, incorporating nanowhiskers of high mobility conductivity and incorporating pn junctions. In one embodiment, a nanowhisker of a first semiconducting material has a first band gap, and an enclosure comprising at least one seco...	03/22/2011
7902083	Passivation layer for a circuit device and method of manufacture According to one embodiment of the disclosure, a method for passivating a circuit device generally includes providing a substrate having a substrate surface, forming an electrical component on the substrate surface, and coating the substrate surface and the electric...	03/08/2011
7897517	Method of selectively depositing materials on a substrate using a supercritical fluid A method for depositing one or more materials on a substrate, such as for example, a semiconductor substrate that includes providing the substrate; applying a polymer film to at least a portion of a surface of the substrate; and exposing the semiconductor substrate ...	03/01/2011
7888271	Method of manufacturing silicon nano-structure A method for making silicon nano-structure, the method includes the following steps. Firstly, providing a growing substrate and a growing device, the growing device comprising a heating apparatus and a reacting room. Secondly, placing the growing substrate and a qua...	02/15/2011
7863198	Method and device to vary growth rate of thin films over semiconductor structures Methods and devices for controlling a growth rate of films in semiconductor structures are shown. Chemical vapor deposition methods and devices include the use of a reaction inhibitor that selectively varies a deposition rate along a surface. One specific method inc...	01/04/2011
7851376	Compressive nitride film and method of manufacturing thereof Embodiments of the invention provide a method of forming a compressive stress nitride film overlying a plurality of p-type field effect transistor gate structures produced on a substrate through a high-density plasma deposition process. Embodiments include generatin...	12/14/2010
7829473	Method for manufacturing memory element A first conductive layer is formed, a composition layer over the first conductive layer is formed by discharging a composition in which nanoparticles comprising a conductive material covered with an organic material are dispersed in a solvent, and the composition la...	11/09/2010
7825035	Semiconductor manufacturing method A semiconductor manufacturing method includes purging a growth chamber including a reaction product, a treatment chamber, and a glove box hermetically surrounding the growth chamber, with an inert gas atmosphere. The method also includes transferring the reaction pr...	11/02/2010
7820556	Method for purifying acetylene gas for use in semiconductor processes Acetylene is treated to remove some residual storage solvent that may be present with the acetylene in a source of acetylene such as a container. Such treatment may be performed prior to supplying the acetylene to a deposition chamber or other reactor where acetylen...	10/26/2010
7816276	Substrate treatment system, substrate treatment method, and computer readable storage medium In the present invention, a plurality of heat treatment plates are provided side by side in a linear form on a base of a heat treatment apparatus in a coating and developing treatment system. In the heat treatment apparatus, three transfer member groups are provided...	10/19/2010
7816277	Method for forming deposit, droplet ejection apparatus, electro-optic device, and liquid crystal display A deposit forming method including ejecting droplets of a deposit forming material onto a substrate, thereby forming a deposit by the droplets on the substrate, is provided. The droplets are ejected along a direction inclined at a predetermined angle in a predetermi...	10/19/2010
7816278	In-situ hybrid deposition of high dielectric constant films using atomic layer deposition and chemical vapor deposition An in-situ hybrid film deposition method for forming a high-k dielectric film on a plurality of substrates in a batch processing system. The method includes loading the plurality of substrates into a process chamber of the batch processing system, depositing by atom...	10/19/2010
7811943	Process for producing silicon carbide crystals having increased minority carrier lifetimes A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers s...	10/12/2010

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Class 438/758 - COATING OF SUBSTRATE CONTAINING SEMICONDUCTOR REGION OR OF SEMICONDUCTOR SUBSTRATE