Class 438/755 - Silicide

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein the material undergoing wet chemical etching
No. of patents: 59
Last issue date: 01/27/2009

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Number	Title	Issue Date
7482282	Use of dilute hydrochloric acid in advanced interconnect contact clean in nickel semiconductor technologies A method for cleaning oxide from the interconnects of a semiconductor that are comprised of nickel (Ni) silicide or nickel-silicide alloys where nickel is the primary metallic component is disclosed. The cleaning comprises performing an SC1 cycle, exposing the wafer...	01/27/2009
7432181	Method of forming self-aligned silicides A method of forming self-aligned silicides is described and applied to a substrate having an isolation area, which divides the substrate into a first area and a second area. A resist protective oxide layer is formed on the substrate, and subsequently a mask layer is...	10/07/2008
7425482	Non-volatile memory device and method for fabricating the same A non-volatile memory device and a method for fabricating the same are provided. The method includes: forming a plurality of gate structures on a substrate, each gate structure including a first electrode layer for a floating gate; forming a first insulation layer c...	09/16/2008
7402531	Method for selectively controlling lengths of nanowires A method for selectively controlling lengths of nanowires in a substantially non-uniform array of nanowires includes establishing at least two different catalyzing nanoparticles on a substrate. A nanowire from each of the at least two different catalyzing nanopartic...	07/22/2008
7396764	Manufacturing method for forming all regions of the gate electrode silicided The technology which can improve the performance of a MOS transistor in which all the regions of the gate electrode were silicided is offered. A gate insulating film and a gate electrode of an nMOS transistor are laminated and formed in this order on a semico...	07/08/2008
7390754	Method of forming a silicide A method of stripping a remnant metal is disclosed. The remnant metal is formed on a transitional silicide of a silicon substrate. Firstly, a surface oxidation process is performed on the transitional silicide, so as to form a protective layer on the transitional si...	06/24/2008
7384877	Technique for reducing silicide defects by reducing deleterious effects of particle bombardment prior to silicidation By reducing the effect of particle bombardment during the sequence for forming a metal silicide in semiconductor devices, the defect rate and the metal silicide uniformity may be enhanced. For this purpose, the metal may be deposited without an immediately preceding...	06/10/2008
7375013	Semiconductor integrated circuit device and process for manufacturing the same Formation of an WNX film 24 constituting a barrier layer of a gate electrode 7A having a polymetal structure is effected in an atmosphere containing a high concentration nitrogen gas, whereby release of N (nitrogen) from the WNX f...	05/20/2008
7255749	Substrate cleaning method and substrate cleaning apparatus In a cleaning treatment of a substrate using an aqueous solution of ammonium fluoride or a mixture of an aqueous solution of ammonium fluoride and hydrofluoric acid as a cleaning liquid, the cleaning liquid is replenished by at least one liquid selected from the gro...	08/14/2007
7192835	Method of forming a high-k film on a semiconductor device According to the present invention, high-k film can be etched to provide a desired geometry without damaging the silicon underlying material. A silicon oxide film 52 is formed on a silicon substrate 50 by thermal oxidation, and a high dielectric consta...	03/20/2007
7187047	Method and structure for reducing resistance of a semiconductor device feature A method used to form a semiconductor device comprises forming a polysilicon layer, forming a conductive barrier layer on the polysilicon layer, then forming a conductive nitride layer on the conductive barrier layer. Next, a conductive amorphous layer is formed on ...	03/06/2007
7119028	Surface imprinted films with carbon nanotubes A film surface imprinted with nanometer-sized particles to produce micro- and/or nano-structured electron and hole collecting interfaces, including: at least one substrate; at least one photoabsorbing conjugated polymer (including polybutylthiophene (pbT)) applied o...	10/10/2006
7105458	Method of etching semiconductor devices using a hydrogen peroxide-water mixture The present invention is a method of producing semiconductor devices and an etching liquid with which the titanium nitride film can be removed without thinning of the CoSi layer. A hydrogen peroxide-water mixture is used for removal of the titanium nitride film in t...	09/12/2006
7067417	Methods of removing resistive remnants from contact holes using silicidation A contact hole can be formed in an insulating layer to expose a surface of an underlying silicon layer at a bottom of the contact hole having a first size. A metal silicide layer can be formed beneath the bottom of the contact hole and removed to form a void beneath...	06/27/2006
7067391	Method to form a metal silicide gate device A new method to form metal silicide gates in the fabrication of an integrated circuit device is achieved. The method comprises forming polysilicon lines overlying a substrate with a dielectric layer therebetween. A first isolation layer is formed overlying the subst...	06/27/2006
7049245	Two-step GC etch for GC profile and process window improvement A method for manufacturing a semiconductor device that comprises defining a semiconductor substrate, forming a gate oxide on the semiconductor substrate, forming a polycrystalline silicon layer over the gate oxide, forming a tungsten silicide layer over the polycrys...	05/23/2006
7018937	Compositions for removal of processing byproducts and method for using same A composition and methods for using the composition in removing processing byproducts is provided. The composition can be non-aqueous or semi-aqueous. The non-aqueous composition includes a non-aqueous solvent and one or more components including a fluoride compound...	03/28/2006
6964929	Method of forming a narrow gate, and product produced thereby A method of making a semiconductor structure includes trimming a patterned hard mask with a wet etch, wherein the hard mask is on a gate layer; and etching the gate layer. In making multiple structures on a semiconductor wafer, an average width of lines in the patte...	11/15/2005
6946402	Fabricating method of polycrystalline silicon thin film transistor with improved electrical characteristics A fabricating method of a polycrystalline silicon thin film transistor includes forming a polycrystalline silicon layer on a substrate having first and second regions through a crystallization process using nickel silicide (NiSix) as a catalyst, patternin...	09/20/2005
6943416	Method and structure for reducing resistance of a semiconductor device feature A method used to form a semiconductor device comprises forming a polysilicon layer, forming a conductive barrier layer on the polysilicon layer, then forming a conductive nitride layer on the conductive barrier layer. Next, a conductive amorphous layer is formed on ...	09/13/2005
6939809	Method for release of surface micromachined structures in an epitaxial reactor A method for releasing from underlying substrate material micromachined structures or devices without application of chemically aggressive substances or excessive forces. The method starts with the step of providing a partially formed device, comprising a substrate ...	09/06/2005
6908569	Ruthenium silicide wet etch A method of removing ruthenium silicide from a substrate surface which comprises exposing the ruthenium silicide surface to a solution containing chlorine and fluorine containing chemicals. In particular, said solution is designed to react with said ruthenium silici...	06/21/2005
6905943	Forming a trench to define one or more isolation regions in a semiconductor structure In one embodiment, a method for forming a semiconductor structure in manufacturing a semiconductor device includes providing a pad layer on a surface of a substrate, providing a nitride layer on the pad layer, and providing a sacrificial oxide layer on the nitride l...	06/14/2005
6881670	Interconnect process and method for removing metal silicide A process for fabricating interconnects is provided. First, a substrate having a dielectric layer and silicon-containing mask layer on the dielectric layer is provided. The dielectric layer is patterned to form an opening. Thereafter, a metallic glue layer is formed...	04/19/2005
6867118	Semiconductor memory and method for fabricating the same A semiconductor substrate has a memory region and a logic region isolated by an isolation insulating film. Plural memory transistors are provided in the form of a matrix in the memory region, and a logic transistor is provided in the logic region. Gate electrodes of...	03/15/2005
6849543	Cobalt silicide formation method employing wet chemical silicon substrate oxidation A method for forming a cobalt silicide layer employs a sequential treatment of a silicon substrate with a hydrofluoric acid material followed by a wet chemical oxidant material. A cobalt material layer is then formed upon the sequentially treated silicon substrate a...	02/01/2005
6815235	Methods of controlling formation of metal silicide regions, and system for performing same The present invention is generally directed to various methods of controlling the formation of metal silicide regions, and a system for performing same. In one illustrative embodiment, the method comprises forming a layer of refractory metal above a feature, perform...	11/09/2004
6746915	Stack-type DRAM memory structure and its manufacturing method The stack-type DRAM memory structure of the present invention comprises a plurality of self-aligned thin third conductive islands over shallow heavily-doped source diffusion regions without dummy transistors to obtain a cell size of 6F2 or smaller; a rect...	06/08/2004
6723657	Method for fabricating a gate stack in very large scale integrated semiconductor memories A method for the fabrication of a gate stack, in particular in very large scale integrated semiconductor memories, uses a combination of a damascene process and a CMP process to produce a gate stack which includes a polysilicon section, a silicide section and a cove...	04/20/2004
6670281	HF etching and oxide scale removal Methods for etching or removing oxide scale from a substrate by applying a composition containing a polymer and an effective amount of hydrofluoric acid and maintaining the composition on the substrate until the substrate is etched or the oxide scale is r...	12/30/2003
6667233	Method for forming a silicide layer of semiconductor device A method for forming a silicide layer of a semiconductor memory device is disclosed. A silicide layer is formed in an impurity junction region through a contact hole exposing the impurity junction region on a semiconductor substrate. Here, two thermal ann...	12/23/2003
6624921	Micromirror device package fabrication method A window is mounted directly to an upper surface of a micromirror device chip. More particularly, the window is mounted above a micromirror device area on the upper surface of the micromirror device chip by a bead. The window in combination with the bead ...	09/23/2003
6613673	Technique for elimination of pitting on silicon substrate during gate stack etch A method for forming a gate stack which minimizes or eliminates damage to the gate dielectric layer and/or silicon substrate during the gate stack formation by the reduction of the temperature during formation. The temperature reduction prevents the forma...	09/02/2003
6589884	Method of forming an inset in a tungsten silicide layer in a transistor gate stack The invention relates to the fabrication of a gate stack or other layered structure in a semiconductor device, and more particularly to methods to selectively etch a metal silicide layer, such as tungsten silicide (WSix), without etching excess...	07/08/2003
6558986	Method of crystallizing amorphous silicon thin film and method of fabricating polysilicon thin film transistor using the crystallization method A method of crystallizing an amorphous silicon thin film is disclosed including the steps of preparing a substrate having a conductive layer, depositing an amorphous silicon thin film on the substrate, forming a metal thin film selectively overlying the a...	05/06/2003
6521540	Method for making self-aligned contacts to source/drain without a hard mask layer An improved and new process for fabricating self-aligned contacts (SAC) to source/drain areas of complimentary (CMOS) FET's has been developed using a non-conformal layer of silicon nitride, eliminating the need for a hard mask. This process allows for "z...	02/18/2003
6498110	Ruthenium silicide wet etch A method of removing ruthenium silicide from a substrate surface which comprises exposing the ruthenium silicide surface to a solution containing chlorine and fluorine containing chemicals. In particular, said solution is designed to react with said ruthe...	12/24/2002
6486067	Method for improving the electrical isolation between the contact and gate in a self-aligned contact MOSFET device structure A method for fabricating a polycide self aligned contact for MOSFET devices in which the electrical isolation between the source/drain contact and gate structure is improved. In the method a gate insulator layer, a polysilicon layer, a metal silicide laye...	11/26/2002
6468914	Method of forming gate electrode in semiconductor device A method of forming a gate electrode in a semiconductor device which can prevent abnormal oxidation of a titanium silicide layer when performing gate re-oxidation process after a gate electrode having a stacked structure of a doped polysilicon layer and t...	10/22/2002
6458711	Self-aligned silicide process A self-aligned silicide process with a selective etch of unreacted metal (plus any nitride) with respect to silicide plus a two step process of highly selective strip of unreacted metal (plus any nitride) followed by a silicide etch to remove unwanted sil...	10/01/2002

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Class 438/755 - Silicide