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Class 438/753 - Silicon


Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein the material undergoing wet chemical etching
No. of patents: 487
Last issue date: 05/29/2012


1                      
NumberTitleIssue Date
8187982Manufacture method for photovoltaic module
The invention permits a plurality of strips of resin adhesive film having a desired width and unwound from a single feeding reel to be simultaneously pasted on a solar cell. For this purpose, the invention comprises the steps of: unwinding a resin adhesive film shee...
05/29/2012
8158531Method of manufacturing solar cell and plasma treatment apparatus
This method of manufacturing a solar cell includes a step of forming a photoelectric conversion layer on a substrate with a plasma treatment apparatus including a first electrode provided in a treatment chamber, a second electrode and a gas supply source supplying g...
04/17/2012
8080480Method of forming fine patterns and manufacturing semiconductor light emitting device using the same
A method of forming a fine pattern begins with providing a c-plane hexagonal semiconductor crystal. A mask having a predetermined pattern is formed on the semiconductor crystal. The semiconductor crystal is dry-etched by using the mask to form a first fine pattern o...
12/20/2011
8012882Method of manufacturing nitride substrate for semiconductors
In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, bow will be a large ±...
09/06/2011
7998877Diffraction grating in conjunction with reduced thickness to increase efficiency of solar cells
This invention describes a method of making solar cells wherein the efficiency of the solar cell is enhanced by defining a diffraction grating either on top of the cell or at the bottom of the cell. The diffraction grating spacing is defined such that it bends one o...
08/16/2011
7951725Manufacturing method of translucent solar cell
A translucent solar cell and a manufacturing method thereof are provided. The translucent solar cell at least includes a substrate, a front electrode layer, a photoconductive layer, and a back electrode layer stacked in order. Therein, a plurality of apertures are f...
05/31/2011
7943526Process for the wet-chemical treatment of one side of silicon wafers
The present invention relates in general terms to the treatment or processing of substrate surfaces. In particular, the invention relates to processes for modifying the surface of silicon wafers. ...
05/17/2011
7939454Module and lamination process for multijunction cells
A method for packaging solar cell module. The method includes providing a first substrate member and forming a plurality of thin film photovoltaic cells overlying the surface region of the first substrate member. A first connector member and a second connector membe...
05/10/2011
7932184Method of manufacturing solar cell module and solar cell module thus manufactured
A method of manufacturing a solar cell module, including: forming a laminated body including a first protective member, a first sealing member having a first melting point, a plurality of solar cells, a second sealing member having a second melting point higher than...
04/26/2011
7902081Methods of etching polysilicon and methods of forming pluralities of capacitors
A method of etching polysilicon includes exposing a substrate comprising polysilicon to a solution comprising water, HF, and at least one of a conductive metal nitride, Pt, and Au under conditions effective to etch polysilicon from the substrate. In one embodiment, ...
03/08/2011
7884029Solar cell, solar module and system and fabrication method thereof
A solar cell having an improved structure of rear surface includes a p-type doped region, a dense metal layer, a loose metal layer, at least one bus bar opening, and solderable material on or within the bus bar opening. The solderable material contacts with the dens...
02/08/2011
7851375Alkaline etchant for controlling surface roughness of semiconductor wafer
An alkali etchant for controlling surface roughness of a semiconductor wafer, which is a sodium hydroxide solution or a potassium hydroxide solution having a weight concentration of 55 wt % to 70 wt %. ...
12/14/2010
7759258Method for making solar cell
A surface texturization process for a silicon wafer, which is applied to a method for making a solar cell, is provided. The surface texturization process substantially comprises: 1) providing an acidic mixed solution; 2) immersing the silicon wafer in the acidic mix...
07/20/2010
7696104Mirror package and method of manufacturing the mirror package
A mirror package is provided which can reflect a laser to an external screen according to a video signal when the laser enters from outside, and a method of manufacturing the mirror package. The mirror is packaged with a glass to protect from external contamination,...
04/13/2010
7696105Method for producing catalyst-free single crystal silicon nanowires, nanowires produced by the method and nanodevice comprising the nanowires
Disclosed herein is a method for producing catalyst-free single crystal silicon nanowires. According to the method, nanowires can be produced in a simple and economical manner without the use of any metal catalyst. In addition, impurities contained in a metal cataly...
04/13/2010
7678706Method of manufacturing a semiconductor device
The occurrence of a package crack in the back vicinity of a die pad is restrained by making the outward appearance of the die pad of a lead frame smaller than that of a semiconductor chip which is mounted on it, and also the occurrence of a package crack in the main...
03/16/2010
7642198Method for evaluating crystal defects of silicon wafer
A method for evaluating crystal defects of a silicon wafer comprising: etching a surface of the silicon wafer by immersing the wafer in an etching solution; and observing etch pits formed on the etched surface of the wafer, wherein the silicon wafer of which crystal...
01/05/2010
7563724Method of producing semiconductor pressure sensor
A method of producing a semiconductor pressure sensor, the sensor having a diaphragm to be deformed by pressure, including: a step of preparing a semiconductor substrate having front and rear surfaces, both of the surfaces being mirror surfaces; a thermally oxidizin...
07/21/2009
7547642Micro-structure manufacturing method
A method of manufacturing a micro-structure includes dry-etching a sacrificial layer provided to a silicon substrate to form structures the sacrificial layer reacting with etching gas to generate reaction products including H2O, wherein the dry-etching in...
06/16/2009
7524773Anti-reflective substrate and the manufacturing method thereof
The present invention is to provide an anti-reflective substrate, and the manufacturing method of the substrate. The method comprises the steps of: (a) providing a substrate; (b) depositing an amorphous silicon layer on the substrate; and (c) etching the amorphous s...
04/28/2009
7514369Method of producing porous silicon particles by stain-etching and silicon nanoparticles from stain-etched silicon powder
The present invention is for a porous silicon powder comprising silicon particles wherein the outermost layers of said particles are porous. The present invention is also directed to a method of making this porous silicon powder using a stain etch method. The presen...
04/07/2009
7479461Method of etching silicon anisotropically
A method for etching Si anisotropically uses a solution containing NH4F and HF. ...
01/20/2009
7449417Cleaning solution for silicon surface and methods of fabricating semiconductor device using the same
There are provided a cleaning solution for a silicon surface containing a buffer solution including acetic acid (CH3COOH) and ammonium acetate (CH3COONH4), iodine oxidizer, hydrofluoric acid (HF), and water. In a method for fabricati...
11/11/2008
7439184Method of making comb-teeth electrode pair
A pair of comb-teeth electrodes are made from a material substrate including a first conduction layer, a second conduction layer and an intervening insulation layer. The paired electrodes includes first and second comb-teeth electrodes. The first comb-teeth electrod...
10/21/2008
7439165Method of fabricating tensile strained layers and compressive strain layers for a CMOS device
A process for forming both tensile and compressive strained silicon layers to accommodate channel regions of MOSFET or CMOS devices has been developed. After formation of shallow trench isolation structures as well as application of high temperature oxidation and ac...
10/21/2008
7432214Compositions for dissolution of low-k dielectric film, and methods of use
An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both ...
10/07/2008
7429369Silicon nanoparticle nanotubes and method for making the same
A relatively thick electrode is positioned opposite the surface of a substrate/second electrode. The electrode and the substrate surface are both contacted by a solution including silicon nanoparticles. The substrate surface is completely immersed in the solution in...
09/30/2008
7410844Device fabrication by anisotropic wet etch
A method of fabrication and a field effect device structure are presented that reduce source/drain capacitance and allow for device body contact. A Si based material pedestal is produced, the top surface and the sidewalls of which are oriented in a way to be substan...
08/12/2008
7407868Chemical thinning of silicon body of an SOI substrate
The present invention discloses a method including: providing a silicon wafer; forming a buried oxide (BOX) in the silicon wafer below a silicon body; and reducing a thickness of the silicon body by chemical thinning. ...
08/05/2008
7396483Uniform chemical etching method
The invention concerns a method of wet chemical etching of a wafer comprising at least one surface layer of silicon-germanium (SiGe) for etching by dispensing an etching solution deposited on a rotating wafer, the method being characterized in that it comprises a fi...
07/08/2008
7396773Method for cleaning a gate stack
A method of making a semiconductor structure, comprises cleaning a gate stack with a cleaning solution. The gate stack comprises a gate layer, a metallic layer on the gate layer, and a etch-stop layer on the metallic layer. The gate layer is on a semiconductor subst...
07/08/2008
7387739Mask and method of manufacturing the same, electroluminescent device and method of manufacturing the same, and electronic instrument
A plurality of penetrating holes are formed in a substrate, each of the penetrating holes connecting a first opening and a second opening larger than the first opening. An etching resistant film is formed on a first surface of the substrate avoiding areas in which t...
06/17/2008
7384799Method to avoid amorphous-si damage during wet stripping processes in the manufacture of MEMS devices
A method for forming a MEMS device using an amorphous silicon layer as a release layer includes etching superjacent films and using the amorphous silicon layer as an etch stop layer. The amorphous silicon layer is resistant to attack during the post-etch solvent str...
06/10/2008
7378355System and methods for polishing a wafer
In methods for smoothing or polishing a surface of a wafer, such as a silicon wafer, a liquid layer is formed on a surface of the wafer. The liquid layer may be an invisible microscopic layer, or a visible macroscopic layer. A flow of an oxidizing gas is directed ov...
05/27/2008
7371660Controlled cleaving process
A technique for forming a film of material (12) from a donor substrate (10). The technique has a step of introducing energetic particles (22) through a surface of a donor substrate (10) to a selected depth (20) underneath the surfa...
05/13/2008
7368395Method for fabricating a nano-imprinting mold
An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vert...
05/06/2008
7361538Transistors and methods of manufacture thereof
Transistors and methods of manufacture thereof are disclosed. A workpiece is provided, a gate dielectric is formed over the workpiece, and a gate is formed over the gate dielectric by exposing the workpiece to a precursor of hafnium (Hf) and a precursor of silicon (...
04/22/2008
7354863Methods of selectively removing silicon
An etch solution that comprises tetramethylammonium hydroxide (“TMAH”) and at least one organic solvent. The etch solution may be substantially free of water. The etch solution is formulated to selectively etch a silicon layer relative to other layers on an inte...
04/08/2008
7338610Etching method for manufacturing semiconductor device
A wafer having a dielectric layer and an electrode partially protruding from the top surface of the dielectric layer is provided. The dielectric layer is etched with a chemical solution such as LAL. Prior to etching, the protruding portion of the electrode is remove...
03/04/2008
7339204Backside contact for touchchip
A contact is formed within an active region of a substrate at the edge of a die, preferably within the first metallization level in the active region of the substrate. An opening having sloped sidewalls is then etched into the back side of the substrate, exposing a ...
03/04/2008
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