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| Number | Title | Issue Date |
| 8187910 | Semiconductor device manufacturing method A method for manufacturing a semiconductor device that includes a semiconductor substrate, the method comprises: a first irradiation step of irradiating a first irradiated region with a focused ion beam so as to selectively remove a first portion corresponding to th... | 05/29/2012 |
| 8021912 | Method of fabricating an image sensor having an annealing layer A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer... | 09/20/2011 |
| 7985614 | Solid-state imaging device and method for manufacturing the same A solid-state imaging device having a high sensitivity and a structure in which a miniaturized pixel is obtained, and a method for manufacturing the solid-state imaging device in which an interface is stable, a spectroscopic characteristic is excellent and which can... | 07/26/2011 |
| 7910394 | Photodiode with improved charge capacity A method for forming a photodiode cathode in an integrated circuit imager includes defining and implanting a photodiode cathode region with a photodiode cathode implant dose of a dopant species and defining and implanting an edge region of the photodiode cathode reg... | 03/22/2011 |
| 7875491 | CMOS image sensors and methods of manufacturing the same A complementary metal-oxide-semiconductor image sensor may include: a semiconductor substrate; a photodiode formed on a first portion of the semiconductor substrate; a transfer gate formed on the semiconductor substrate, near the photodiode, to transfer optical char... | 01/25/2011 |
| 7867810 | Method for manufacturing a solid-state image capturing apparatus A method for manufacturing a solid-state image capturing apparatus including a pixel array constituted of a plurality of pixels, is provided, where each of the plurality of pixels includes a photoelectric conversion section, the method comprising the steps of: formi... | 01/11/2011 |
| 7816170 | Dual-pixel full color CMOS imager with large capacity well A dual-pixel full color CMOS imager comprises a two-photodiode stack including an n doped substrate, a bottom photodiode, and a top photodiode. The bottom photodiode has a bottom p doped layer at a first depth overlying the substrate and a bottom n doped layer catho... | 10/19/2010 |
| 7811850 | Method of operating image sensor Isolation methods and devices for isolating pixels of an image sensor pixel. The isolation structure and methods include forming a biased gate over a field isolation region and adjacent a pixel of an image sensor. The isolation methods also include forming an isolat... | 10/12/2010 |
| 7759157 | Gate oxide film structure for a solid state image pick-up device In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by ... | 07/20/2010 |
| 7749799 | Back-illuminated imager and method for making electrical and optical connections to same Methods for bringing or exposing metal pads or traces to the backside of a backside-illuminated imager allow the pads or traces to reside on the illumination side for electrical connection. These methods provide a solution to a key packaging problem for backside thi... | 07/06/2010 |
| 7749798 | Optimized photodiode process for improved transfer gate leakage An image sensing circuit and method is disclosed, wherein a photodiode is formed in a substrate through a series of angled implants. The photodiode is formed by a first, second and third implant, wherein at least one of the implants are angled so as to allow the res... | 07/06/2010 |
| 7687306 | CMOS image sensor and method for manufacturing the same A CMOS image sensor and manufacturing method thereof are disclosed. The present CMOS image sensor comprises: a semiconductor substrate including an active region having a photo diode region and a transistor region; a gate on the active region, comprising a gate insu... | 03/30/2010 |
| 7592200 | Solid-state imaging device and method of manufacturing the same There are provided a semiconductor substrate 101 on which solid-state imaging devices are formed, and a translucent member 201 provided onto a surface of the semiconductor substrate such that spaces are provided to oppose to light receiving areas of th... | 09/22/2009 |
| 7585695 | Lightshield architecture for interline transfer image sensors An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring ... | 09/08/2009 |
| 7582505 | Solid-state imaging device and method of manufacturing said solid-state imaging device It is an object to provide solid-state imaging device, which can easily be manufactured and has a high reliability, and a method of manufacturing the solid-state imaging device. In the present invention, a manufacturing method comprises the steps of forming a plural... | 09/01/2009 |
| 7544533 | Method and apparatus for providing an integrated circuit having p and n doped gates A method and apparatus providing an integrated circuit having a plurality of gate stack structures having gate oxide layers with differing thicknesses and nitrogen concentrations and gate electrodes with differing conductivity types and active dopant concentrations.... | 06/09/2009 |
| 7427528 | CMOS image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same in which color balance is enhanced by forming photodiodes to have a depth varied according to the wavelength of incident light to be received through a color filter layer. The predetermined depth varies, from... | 09/23/2008 |
| 7425456 | Antiferromagnetic stabilized storage layers in GMRAM storage devices A giant magnetoresistive memory device includes a magnetic sense layer, a magnetic storage layer, a non-magnetic spacer layer between the magnetic sense layer and the magnetic storage layer, and an antiferromagnetic layer formed in proximity to the magnetic storage ... | 09/16/2008 |
| 7422925 | Solid-state imaging apparatus and manufacturing method thereof The present invention aims to provide a solid-state apparatus and a manufacturing method thereof, the solid-state apparatus having both high transfer efficiency in a horizontal transfer CCD and efficient breakdown voltage in a vertical transfer CCD and including a s... | 09/09/2008 |
| 7416908 | Method for fabricating a micro structure A method for fabricating a micro structure includes depositing a first layer of a first material over a substrate; patterning a first hard mask over the first layer; depositing a second layer of a second material over the first layer and the first hard mask; pattern... | 08/26/2008 |
| 7416916 | Solid-state image sensing device driving method and solid-state image sensing apparatus A method of driving a solid-state image sensing device comprises plural photoelectric conversion devices arranged in rows and columns perpendicular to the rows, VCCDs through which charges generated by the photoelectric conversion devices are transferred in the colu... | 08/26/2008 |
| 7410823 | Image sensors for reducing dark current and methods of manufacturing the same An image sensor includes a substrate region of a first conductivity type, a photodiode region of a second conductivity type located in the substrate, a hole accumulated device (HAD) region of the first conductivity type located at a surface of the substrate and over... | 08/12/2008 |
| 7402451 | Optimized transistor for imager device An imager device that has mitigated dark current leakage and punch-through protection. The transistor associated with the photoconversion device is formed with a single (i.e, one-sided) active area extension region on one side of the transistor gate opposite the pho... | 07/22/2008 |
| 7402452 | Gate oxide film structure for a solid state image pick-up device In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by ... | 07/22/2008 |
| 7402787 | Method of thin lightshield process for solid-state image sensors An image sensor includes a substrate having photosensitive areas; an insulator spanning at least a portion of the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected porti... | 07/22/2008 |
| 7391001 | Thin lightshield process for solid-state image sensors An image sensor includes a substrate having photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensit... | 06/24/2008 |
| 7382003 | Solid-state image pick-up unit and method of manufacturing the same A solid-state image pick-up unit comprises: a semiconductor substrate comprising an area in which a photoelectric converting portion is formed; and an electric charge transfer portion that transfers an electric charge formed by the photoelectric converting portion, ... | 06/03/2008 |
| 7368771 | CMOS image sensor and method of fabricating the same Provided are a complementary metal oxide semiconductor (CMOS) image sensor and a method of fabricating the same, where the CMOS image sensor includes a photodiode, a drive transistor, a reset transistor, and a selection transistor; the drive transistor includes a th... | 05/06/2008 |
| 7364960 | Methods for fabricating solid state image sensor devices having non-planar transistors Methods for fabricating CMOS image sensor devices are provided, wherein active pixel sensors are constructed with non-planar transistors having vertical gate electrodes and channels, which minimize the effects of image lag and dark current. ... | 04/29/2008 |
| 7361527 | Image sensor with improved charge transfer efficiency and method for fabricating the same An image sensor includes: a gate structure on a semiconductor layer of a first conductive type; a first impurity region of the first conductive type aligned with one side of the gate structure and extending to a predetermined depth from a surface portion of the semi... | 04/22/2008 |
| 7358105 | Solid-state imaging device, method for manufacturing the same and interline transfer CCD image sensor A high-performance solid-state imaging device is provided. The solid-state imaging device includes: a plurality of pixel cells; and a driving unit. Each of the plurality of pixel cells includes: a photodiode that converts incident light into a signal charge and stor... | 04/15/2008 |
| 7354791 | Solid-state imaging device, method for manufacturing the same, and method for driving the same In a solid-state imaging device in which a N-type photoelectric conversion region is formed in a P−-type well region, a light-blocking film and a transparent conductive film are formed on the N-type photoelectric conversion region with a second interlay... | 04/08/2008 |
| 7348204 | Method of fabricating solid state imaging device including filling interelectrode spacings A method for fabricating a solid state imaging device comprising photoelectric conversion sections and charge transfer sections having single-layered charge transfer electrodes for transferring charges generated in the photoelectric conversion sections, the method i... | 03/25/2008 |
| 7342276 | Method and apparatus utilizing monocrystalline insulator A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive eleme... | 03/11/2008 |
| 7338880 | Method of fabricating a semiconductor device A method of fabricating a semiconductor device includes steps of forming at least one shallow-trench isolation region in a semiconductor substrate; forming a photoresist pattern for blocking a photodiode region; sequentially implanting dopant ions and boron ions int... | 03/04/2008 |
| 7332368 | Light guide for image sensor A new method to form an image sensor device is achieved. The method comprises forming an image sensing array in a substrate comprising a plurality of light detecting diodes with spaces between the diodes. A first dielectric layer is formed overlying the diodes but n... | 02/19/2008 |
| 7329557 | Method of manufacturing solid-state imaging device with P-type diffusion layers A solid-state imaging device includes: a plurality of N-type photodiode regions formed inside a P-type well; a gate electrode having one edge being positioned adjacent to each of the photodiode regions; a N-type drain region positioned adjacent to the other edge of ... | 02/12/2008 |
| 7321141 | Image sensor device and manufacturing method thereof A semiconductor substrate is provided on which a plurality of shallow trench isolations (STI) defining a plurality of active areas are formed. The active areas comprise a photo sensing region, and a plurality of photodiodes are formed in each photo sensing region. T... | 01/22/2008 |
| 7316937 | Method for manufacturing a solid-state image sensing device, such as a CCD Light detecting elements are formed in areas marked off by scribe lines on a semiconductor substrate, and color filters are deposited in such a manner as to cover the formed areas of the light detecting elements, and then an infrared cut-off filter, on which an infr... | 01/08/2008 |
| 7312098 | CMOS image sensor and method of manufacturing the same There is provided a CMOS image sensor comprises a LOCOS isolation film 6 formed on the surface of a semiconductor substrate 100 containing a peripheral circuit 31 and a photodiode region 15, a gate electrode 1 formed on the surface... | 12/25/2007 |
