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| Number | Title | Issue Date |
| 8058181 | Method for post-etch cleans The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise ... | 11/15/2011 |
| 7879735 | Cleaning solution for silicon surface and methods of fabricating semiconductor device using the same A cleaning solution and methods of fabricating semiconductor devices using the same are provided. A cleaning solution used for cleaning a silicon surface and methods of fabricating a semiconductor device using the same are also provided. The cleaning solution may in... | 02/01/2011 |
| 7790625 | Method for manufacturing semiconductor device A method of manufacturing a semiconductor device includes preparing a semiconductor wafer, forming a semiconductor function element on the semiconductor wafer, drying the semiconductor wafer after forming the semiconductor function element by using an isopropyl alco... | 09/07/2010 |
| 7651952 | Aerodynamic shapes for wafer structures to reduce damage caused by cleaning processes Wafer structures and associated methods of fabrication are described. The wafer structures are fabricated to have aerodynamic shapes. Even if the structures on the wafer are fragile, the aerodynamic shapes of the structures create less resistance to a fluid flow of ... | 01/26/2010 |
| 7569492 | Method for post-etch cleans The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise ... | 08/04/2009 |
| 7534728 | Process for cleaning silicon substrate In the production process of an SOI substrate using a hydrogen ion implantation method, a process is provided for cleaning the substrate which can prevent formation of voids when bonding substrates and formation of blistering after exfoliation. In the process for cl... | 05/19/2009 |
| 7431860 | Etching process A method for etching a pattern in a material in precise target areas comprising depositing selectively onto the material droplets of a substance for dissolving or reacting chemically with the material. Droplets may be deposited from a print head of the type having a... | 10/07/2008 |
| 7419914 | Semiconductor device fabrication method A method for fabricating a semiconductor device with a borderless via/wiring structure includes the steps of performing borderless via etching using a resist mask to form a contact hole in an interlevel dielectric layer over a semiconductor substrate so as to expose... | 09/02/2008 |
| 7405165 | Dual-tank etch method for oxide thickness control A dual-tank etch method which is suitable for the stripping of a silicon nitride layer from a pad oxide layer provided on a substrate, and etching of the pad oxide layer to a desired target thickness, is disclosed. The method includes providing a first processing ta... | 07/29/2008 |
| 7390755 | Methods for post etch cleans The current invention provides methods for performing a cleaning process that provides greater cleaning efficiency with less damage to device structures. After etching and photoresist stripping, a first plasma clean is performed. The first plasma clean may comprise ... | 06/24/2008 |
| 7371333 | Methods of etching nickel silicide and cobalt silicide and methods of forming conductive lines The invention includes methods of etching nickel silicide and cobalt silicide, and methods of forming conductive lines. In one implementation, a substrate comprising nickel silicide is exposed to a fluid comprising H3PO4 and H2O at a... | 05/13/2008 |
| 7354869 | Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method A method for a substrate processing apparatus having a substrate holding mechanism and a chemical solution dispensing/sucking mechanism including a chemical solution dispensing port for supplying a first chemical solution and a chemical solution suction port, includ... | 04/08/2008 |
| 7344999 | Method for cleaning substrate having exposed silicon and silicon germanium layers and related method for fabricating semiconductor device A method for cleaning a substrate on which a silicon layer and a silicon germanium layer are formed and exposed, and method for fabricating a semiconductor device using the cleaning method are disclosed. The cleaning method comprises preparing a semiconductor substr... | 03/18/2008 |
| 7339240 | Dual-gate integrated circuit semiconductor device The present invention provides a method for fabricating a dual gate semiconductor device. In one aspect, the method comprises forming a nitridated, high voltage gate dielectric layer over a semiconductor substrate, patterning a photoresist over the nitridated, high ... | 03/04/2008 |
| 7332437 | Method for processing semiconductor wafer and semiconductor wafer There is provided a method for processing a semiconductor wafer subjected to a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid et... | 02/19/2008 |
| 7323421 | Silicon wafer etching process and composition A process for etching silicon wafers using a caustic etchant in the form of an aqueous solution comprising water, a hydroxide ion source, and a chelating agent. The process produces silicon wafers substantially free from diffused metal ions. ... | 01/29/2008 |
| 7319076 | Low resistance T-shaped ridge structure A method and apparatus to provide a low resistance interconnect. A void is defined in the sacrificial layer that is proximate to an active layer. An overgrowth layer is formed in the void and over portions of the sacrificial layer adjacent to the void. A ridge secti... | 01/15/2008 |
| 7303933 | Process of manufacturing a semiconductor device A process of manufacturing a semiconductor device includes the steps of forming a stacked structure of a first III-V compound semiconductor layer containing In and having a composition different from InP and a second III-V compound semiconductor layer containing In.... | 12/04/2007 |
| 7291283 | Combined wet etching method for stacked films and wet etching system used for same A combined wet etching method for stacked films which is capable of performing etching processes in a collective manner while controlling an amount of side-etching on each of stacked films and of making uniform side edges. In the wet etching method, two or more type... | 11/06/2007 |
| 7288206 | High-purity alkali etching solution for silicon wafers and use thereof A high-purity alkali etching solution for silicon wafers results in silicon wafers with extremely low metal impurity contamination, and excellent surface flatness. The alkali etching solution contains sodium hydroxide containing 1 ppb or less of the elements Cu, Ni,... | 10/30/2007 |
| 7267127 | Method for manufacturing electronic device A method for manufacturing an electronic device comprising the steps of: dry-etching a Ti-containing metal film formed on a substrate with a gas containing fluorine; and treating the substrate with a chemical solution containing fluorine ions after the dry etching s... | 09/11/2007 |
| 7256465 | Ultra-shallow metal oxide surface channel MOS transistor An ultra-shallow surface channel MOS transistor and method for fabricating the same have been provided. The method comprises: forming CMOS source and drain regions, and an intervening well region; depositing a surface channel on the surface overlying the well region... | 08/14/2007 |
| 7256138 | Method and composition for selectively etching against cobalt silicide An etching method for use in integrated circuit fabrication includes providing a metal nitride layer on a substrate assembly, providing regions of cobalt silicide on first portions of the metal nitride layer, and providing regions of cobalt on second portions of the... | 08/14/2007 |
| 7247578 | Method of varying etch selectivities of a film A method of patterning a crystalline film. A crystalline film having a degenerate lattice comprising first atoms in a first region and a second region is provided. Dopants are substituted for said first atoms in said first region to form a non-degenerate crystalline... | 07/24/2007 |
| 7244308 | Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device A crystal substrate and a crystal film of a III-V compound of the nitride system which have no defects in the surfaces. A method of manufacturing a crystal of a III-V compound of the nitride system, and a method of manufacturing a device. A base crystal layer is for... | 07/17/2007 |
| 7208069 | Device for etching semiconductors with a large surface area The device etches semiconductors with a large surface area in a trough-shaped receptacle containing a liquid electrolyte. A sample head is mounted inside the etching trough, and is provided with a device for holding at least one semiconductor wafer. The device is ti... | 04/24/2007 |
| 7205245 | Method of forming trench isolation within a semiconductor substrate A method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon nitride and an oxide of aluminum. The silicon nitride and the oxide is exposed to an etching solution comprising HF and a... | 04/17/2007 |
| 7205184 | Method of crystallizing silicon film and method of manufacturing thin film transistor liquid crystal display A method of crystallizing a silicon film by which it is possible to obtain a polycrystalline silicon thin film having a uniform crystal structure and a good quality, and a method of manufacturing a thin film transistor-liquid crystal display (TFT-LCD) using the same... | 04/17/2007 |
| 7195927 | Process for making magnetic memory structures having different-sized memory cell layers An exemplary method for making a memory structure having different-sized memory cell layers comprises forming at least two layers of ferromagnetic materials, forming at least one mask layer above the ferromagnetic materials, patterning the at least one mask layer, e... | 03/27/2007 |
| 7189628 | Fabrication of trenches with multiple depths on the same substrate Dual trench depths are achieved on the same wafer by forming an initial trench having a depth corresponding to the difference in final depths of the shallow and deep trenches. A second mask is used to open areas for the deep trenches over the preliminary trenches an... | 03/13/2007 |
| 7183575 | High reverse voltage silicon carbide diode and method of manufacturing the same high reverse voltage silicon carbide diode A high reverse voltage diode includes a hetero junction made up from a silicon carbide base layer, which constitutes a first semiconductor base layer, and a polycrystalline silicon layer, which constitutes a second semiconductor layer, and whose band gap is differen... | 02/27/2007 |
| 7183226 | Method of forming a trench for use in manufacturing a semiconductor device A method for use in manufacturing a semiconductor device includes forming a photoresist pattern on a substrate, performing first etching process in which an initial trench is formed using the photoresist pattern as a mask, and performing second distinct etching proc... | 02/27/2007 |
| 7172975 | Process for the wet chemical treatment of semiconductor wafers A process for the wet chemical treatment of semiconductor wafers, in which the semiconductor wafers are treated with treatment liquids, has the semiconductor wafers firstly treated with an aqueous HF solution, then treated with an aqueous O3 solution and ... | 02/06/2007 |
| 7165560 | Etching method, etching apparatus, and method for manufacturing semiconductor device In order to reliably remove, by wet etching, a compound containing a metal and silicon, e.g., a silicate (101a) containing hafnium metal, the silicate (101a) is oxidized and then the oxidized silicate (101a) is wet-etched. | 01/23/2007 |
| 7160816 | Method for fabricating semiconductor device The present invention relates to a method for fabricating a semiconductor device. In more detail of the aforementioned method, a first mask layer covering a cell region is formed on an insulation layer in the cell region. Meanwhile, a second mask layer is formed in ... | 01/09/2007 |
| 7155963 | Cleaning evaluation method for a substrate The present invention relates to a cleaning evaluation method for evaluating a surface cleanliness of a substrate which has been cleaned after being polished. This method includes preparing a dummy substrate having a metal film formed on a surface thereof and a moni... | 01/02/2007 |
| 7148114 | Process for patterning high-k dielectric material A method of patterning a layer of high-k dielectric material is provided, which may be used in the fabrication of a semiconductor device. A first etch is performed on the high-k dielectric layer. A portion of the high-k dielectric layer being etched with the first e... | 12/12/2006 |
| 7148130 | Semiconductor device and method of manufacturing the same A semiconductor device is disclosed, which comprises a semiconductor substrate, source/drain regions formed in the semiconductor substrate, a gate insulating film formed on a channel region between the source/drain regions, a gate electrode formed on the gate insula... | 12/12/2006 |
| 7135414 | Method for producing multicrystalline silicon substrate for solar cells Disclosed is a method for producing a multicrystalline silicon substrate for solar cells comprising: a metal deposition step for depositing such metal particles as platinum and silver on the surface of the substrate by electroless-plating chloroplatinic acid or silv... | 11/14/2006 |
| 7129177 | Write head fabrication by inverting order of process steps During fabrication of a write head via holes are first opened in a gap layer, followed by formation of seed layers instead of the other way around. Moreover a first seed layer is formed, and without the first seed layer being used a second seed layer is formed. The ... | 10/31/2006 |
