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| Number | Title | Issue Date |
| 8053371 | Apparatus and methods for selective removal of material from wafer alignment marks A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon. ... | 11/08/2011 |
| 8043974 | Semiconductor wet etchant and method of forming interconnection structure using the same A semiconductor wet etchant includes deionized water, a fluorine-based compound, an oxidizer and an inorganic salt. A concentration of the fluorine-based compound is 0.25 to 10.0 wt % based on a total weight of the etchant, a concentration of the oxidizer is 0.45 to... | 10/25/2011 |
| 7981807 | Manufacturing method of semiconductor device with smoothing Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semico... | 07/19/2011 |
| 7432214 | Compositions for dissolution of low-k dielectric film, and methods of use An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both ... | 10/07/2008 |
| 7396773 | Method for cleaning a gate stack A method of making a semiconductor structure, comprises cleaning a gate stack with a cleaning solution. The gate stack comprises a gate layer, a metallic layer on the gate layer, and a etch-stop layer on the metallic layer. The gate layer is on a semiconductor subst... | 07/08/2008 |
| 7371693 | Manufacturing method of semiconductor device with chamfering Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semico... | 05/13/2008 |
| 7371694 | Semiconductor device fabrication method and fabrication apparatus The flatness of the surface of a Si substrate is requested as the present gate length is miniaturized. The present invention is a semiconductor device fabrication method for flattening a silicon surface by continuously supplying a high-temperature fluoride ammonium ... | 05/13/2008 |
| 7354869 | Substrate processing method, substrate processing apparatus, and semiconductor device manufacturing method A method for a substrate processing apparatus having a substrate holding mechanism and a chemical solution dispensing/sucking mechanism including a chemical solution dispensing port for supplying a first chemical solution and a chemical solution suction port, includ... | 04/08/2008 |
| 7354530 | Chemical mechanical polishing systems and methods for their use Alpha-amino acid containing chemical mechanical polishing compositions and slurries that are useful for polishing substrates including multiple layers of metals, or metals and dielectrics. ... | 04/08/2008 |
| 7341065 | Single wafer cleaning method to reduce particle defects on a wafer surface Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times duri... | 03/11/2008 |
| 7332437 | Method for processing semiconductor wafer and semiconductor wafer There is provided a method for processing a semiconductor wafer subjected to a chamfering process, a lapping process, an etching process, and a mirror-polishing process, wherein acid etching is performed after alkaline etching as the etching process, and the acid et... | 02/19/2008 |
| 7312159 | Compositions for dissolution of low-k dielectric films, and methods of use An improved composition and method for cleaning the surface of a semiconductor wafer are provided. The composition can be used to selectively remove a low-k dielectric material such as silicon dioxide, a photoresist layer overlying a low-k dielectric layer, or both ... | 12/25/2007 |
| 7307026 | Method of forming an epitaxial layer for raised drain and source regions by removing contaminations According to the present invention, a wet chemical oxidation and etch process cycle allows efficient removal of contaminated silicon surface layers prior to the epitaxial growth of raised source and drain regions, thereby effectively reducing the total thermal budge... | 12/11/2007 |
| 7291283 | Combined wet etching method for stacked films and wet etching system used for same A combined wet etching method for stacked films which is capable of performing etching processes in a collective manner while controlling an amount of side-etching on each of stacked films and of making uniform side edges. In the wet etching method, two or more type... | 11/06/2007 |
| 7288207 | Etching liquid for controlling silicon wafer surface shape and method for manufacturing silicon wafer using the same A method for manufacturing a silicon wafer includes a planarizing process 13 for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process for dipping t... | 10/30/2007 |
| 7235141 | Lift-off method and chemical liquid tank A lift-off procedure is provided which enables prevention of damage to a wiring pattern caused by contact of a metal being peeled off from a wafer with a wiring pattern at a time of lift-off procedure. A wafer having a surface on which a pattern is formed which cont... | 06/26/2007 |
| 7217952 | Method of manufacturing a semiconductor device and semiconductor manufacturing apparatus A technique for manufacturing TFTs having little dispersion in their electrical characteristics is provided. Contamination of a semiconductor film is reduced by performing oxidation processing having an organic matter removing effect, forming a clean oxide film, aft... | 05/15/2007 |
| 7205245 | Method of forming trench isolation within a semiconductor substrate A method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon nitride and an oxide of aluminum. The silicon nitride and the oxide is exposed to an etching solution comprising HF and a... | 04/17/2007 |
| 7183574 | Thin film transistor with gate electrode portion crossing grain growing direction and liquid crystal display comprising the same The present invention relates to a thin film transistor and a liquid crystal display. A gate electrode is formed to include at least one portion extending in a direction perpendicular to a gain growing direction in order to make electrical charge mobility of TFTs un... | 02/27/2007 |
| 7179753 | Process for planarizing substrates of semiconductor technology In a process for planarization of semiconductor substrates in which a layer which has been applied to a semiconductor substrate which has a trench and/or contact holes is removed such that the layer remains solely in the area of the trenches or contact holes, instea... | 02/20/2007 |
| 7179693 | Method for manufacturing thin film device that includes a chemical etchant process The present invention relates to a method for manufacturing a thin film device. The thin film device is manufactured by bonding a second substrate (106) to a thin film device layer (103) provided on a protective layer (102) formed on a first sub... | 02/20/2007 |
| 7172975 | Process for the wet chemical treatment of semiconductor wafers A process for the wet chemical treatment of semiconductor wafers, in which the semiconductor wafers are treated with treatment liquids, has the semiconductor wafers firstly treated with an aqueous HF solution, then treated with an aqueous O3 solution and ... | 02/06/2007 |
| 7172708 | Process for the fabrication of thin-film device and thin-film device A thin-film device is fabricated by forming a protective layer and a thin-film device layer one by one on a first substrate and bonding a second substrate on the thin-film device layer via a first adhesive layer or a coating layer and first adhesive layer, removing ... | 02/06/2007 |
| 7135120 | Method of manufacturing a spectral filter for green and shorter wavelengths The UV, deep UV and/or far UV (ultraviolet) filter transmission spectrum of an MPSi spectral filter is optimized by introducing at least one layer of substantially transparent dielectric material on the pore walls. Such a layer will modify strongly the spectral depe... | 11/14/2006 |
| 7104267 | Planarized copper cleaning for reduced defects A process for treating a copper or copper alloy substrate surface with a composition and corrosion inhibitor solution to minimize defect formation and surface corrosion, the method including applying a composition including one or more chelating agents, a pH adjusti... | 09/12/2006 |
| 7067414 | Low k interlevel dielectric layer fabrication methods A low k inter-level dielectric layer fabrication method includes providing a substrate having integrated circuitry at least partially formed thereon. An oxide-comprising inter-level dielectric layer including carbon and having a dielectric constant no greater than 3... | 06/27/2006 |
| 7059762 | Three-dimensional-motion-like rotational blend device The three dimensional shaker consists of a base box with shaking platform, magnetic holders for liquid containers, and a mounted temperature control chamber. The three dimensional rocking movement of the platform can mix and blend liquids thoroughly and rapidly. The... | 06/13/2006 |
| 7048824 | Device for treating silicon wafers A device (1) for treating objects, in particular silicon wafers (2), with a fluid (3), comprising a container (4) that holds the fluid (3); a rotatable carrying arrangement (5) for accommodation of the objects to be treated,... | 05/23/2006 |
| 7040330 | Method and apparatus for megasonic cleaning of patterned substrates A system for cleaning a semiconductor substrate is provided. The system includes transducers for generating acoustic energy oriented in a substantially perpendicular direction to a surface of a semiconductor substrate and an acoustic energy oriented in a substantial... | 05/09/2006 |
| 7037758 | Semiconductor device, method of manufacturing the same, circuit board and electronic apparatus The invention provides a method of manufacturing a semiconductor that improves the productivity and the yield of a product, and grinds a semiconductor substrate so that it has almost uniform thickness. The method can include forming a protrusion on a semiconductor s... | 05/02/2006 |
| 7030034 | Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum A method of etching silicon nitride substantially selectively relative to an oxide of aluminum includes providing a substrate comprising silicon nitride and an oxide of aluminum. The silicon nitride and the oxide is exposed to an etching solution comprising HF and a... | 04/18/2006 |
| 7026255 | Method and device for photo-electrochemically etching a semiconductor sample, especially gallium nitride In a method for photo-electrochemical etching of a semiconductor sample, the semiconductor sample is brought in contact with an electrolyte liquid. The contact area formed thereby is illuminated through the electrolyte liquid with UV light. The photo-current created... | 04/11/2006 |
| 7026210 | Method for forming a bottle-shaped trench The invention provides a method for forming a bottle-shaped trench. A semiconductor substrate having a pad stack layer and a trench formed thereon is provided. Sidewall protective layers are then formed on the upper sidewalls of the trench. A masking layer is formed... | 04/11/2006 |
| 7018939 | Micellar technology for post-etch residues A method is provided herein for cleaning a semiconductor device. In accordance with the method, a semiconductor device is provided (11), and a micellar solution is applied (13) to the semiconductor device. The method is particularly useful for cleaning... | 03/28/2006 |
| 7001086 | Developing method, substrate treating method, and substrate treating apparatus A developing method comprises determining in advance the relation of resist dissolution concentration in a developing solution and resist dissolution speed by the developing solution, estimating in advance the resist dissolution concentration where the resist dissol... | 02/21/2006 |
| 6992014 | Method and apparatus for etch rate uniformity control A method for controlling a process on a substrate. The method comprising: providing the substrate, the substrate having an upper surface, an opposite lower surface and an edge between the upper and lower surfaces; processing the upper surface of the substrate with a... | 01/31/2006 |
| 6969688 | Wet etchant composition and method for etching HfO2 and ZrO2 A wet etchant solution composition and method for etching oxides of hafnium and zirconium including at least one solvent present at greater than about 50 weight percent with respect to an arbitrary volume of the wet etchant solution; at least one chelating agent pre... | 11/29/2005 |
| 6955994 | Method of manufacturing semiconductor device and method of manufacturing optical wave guide A method of manufacturing a semiconductor device, including the steps of (a) rowing an InP layer on a surface of starting growth, resulting in the InP layer having a convex structure, and (b) wet etching the InP layer by an enchant including hydrochloric acid and ac... | 10/18/2005 |
| 6947862 | Method for simulating slurry flow for a grooved polishing pad A method for determining the flow of a fluid (60) in a gap (64) between a pad (48) and a substrate (12) includes the step of utilizing a hybrid Navier-Stokes/lubrication formulation to calculate the flow of the fluid (60) in the ga... | 09/20/2005 |
| 6932871 | Multi-station deposition apparatus and method A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rota... | 08/23/2005 |
