Bizarre Patents
An aircraft having vertical takeoff and landing capability provided with at least first and second laterally extending paddle wheels rotatable on a central axis perpendicular to the longitudinal axis of the aircraft fuselage and between its nose and tail.
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 7776757 | Method of fabricating high-k metal gate devices The present disclosure provides a method for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a first me... | 08/17/2010 |
| 7776756 | Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a conc... | 08/17/2010 |
| 7598181 | Process for enhancing solubility and reaction rates in supercritical fluids Processes for enhancing solubility and the reaction rates in supercritical fluids are provided. In preferred embodiments, such processes provide for the uniform and precise deposition of metal-containing films on semiconductor substrates as well as the uniform and p... | 10/06/2009 |
| 7550395 | Control of photoelectrochemical (PEC) etching by modification of the local electrochemical potential of the semiconductor structure relative to the electrolyte A method for locally controlling an electrical potential of a semiconductor structure or device, and hence locally controlling lateral and/or vertical photoelectrochemical (PEC) etch rates, by appropriate placement of electrically resistive layers or layers that imp... | 06/23/2009 |
| 7538042 | Method of manufacturing a structure having a projection A method of manufacturing a structure is provided. This method include a steps of preparing a first substrate having a projection, forming a first layer on the projection, transferring the first layer to a second substrate, and removing at least apart of the second ... | 05/26/2009 |
| 7410814 | Process and apparatus for cleaning silicon wafers An effective electropurge process and apparatus for wet processing of semiconductor wafers applies electrical charges to the wafer surface with an ample voltage sufficient to provide an effective field intensity which can substantially eliminate intolerable sub-0.05... | 08/12/2008 |
| 7410909 | Method of removing ion implanted photoresist A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic process is applied, first rinsing the semiconductor substrate using co... | 08/12/2008 |
| 7375017 | Method for fabricating semiconductor device having stacked-gate structure A method for fabricating a semiconductor a semiconductor device having a stacked-gate structure. A polysilicon layer is formed overlying a substrate, which is insulated from the substrate by a dielectric layer. A metal-flash layer is formed overlying the polysilicon... | 05/20/2008 |
| 7332433 | Methods of modulating the work functions of film layers Methods for fabricating two metal gate stacks with varying work functions for complementary metal oxide semiconductor (CMOS) devices are provided A first metal layer may be deposited onto a gate dielectric, followed by the deposition of a second metal layer, where t... | 02/19/2008 |
| 7317231 | Method for making a semiconductor device having a high-K gate dielectric and a titanium carbide gate electrode A method for making a titanium carbide layer is described. That method comprises alternately introducing a carbon containing precursor and a titanium containing precursor into a chemical vapor deposition reactor, while a substrate is maintained at a selected tempera... | 01/08/2008 |
| 7309529 | Structure and method for improved adhesion between two polymer films A method for improving the adhesion between polyimide layers and the structure formed by the method. A silicon oxide-containing layer is formed on the surface of a polyimide layer and a second layer of polyimide is formed on the silicon oxide-containing layer. ... | 12/18/2007 |
| 7307026 | Method of forming an epitaxial layer for raised drain and source regions by removing contaminations According to the present invention, a wet chemical oxidation and etch process cycle allows efficient removal of contaminated silicon surface layers prior to the epitaxial growth of raised source and drain regions, thereby effectively reducing the total thermal budge... | 12/11/2007 |
| 7276454 | Application of impressed-current cathodic protection to prevent metal corrosion and oxidation A new method is provided for the processing of metals, most notably copper, such that damage to exposed surfaces of these metals is prevented. During a step of semiconductor processing, which results in exposing a metal surface to a wet substance having a pH value, ... | 10/02/2007 |
| 7255800 | Wet etching process The present invention illustrates a bulk silicon etching technique that yields straight sidewalls, through wafer structures in very short times using standard silicon wet etching techniques. The method of the present invention employs selective porous silicon format... | 08/14/2007 |
| 7247577 | Insulated pad conditioner and method of using same A wafer planarization process with a conditioning tool having an electrical insulator that electrically insulates the abrasive surface of the conditioning tool. The electrical insulator extends the useful life of the abrasive surface of the conditioning tool by redu... | 07/24/2007 |
| 7226842 | Fabricating strained channel epitaxial source/drain transistors The mobility of carriers may be increased in strained channel epitaxial source/drain transistors. Doped silicon material may be blanket deposited after removing ion implanted source/drain regions. The blanket deposition forms amorphous films over non-source/drain ar... | 06/05/2007 |
| 7183225 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is disclosed. In the method, a buffer oxide film and a nitride film are formed on a semiconductor substrate in succession, an opening is formed in the nitride film and the buffer oxide film for exposing a field region ... | 02/27/2007 |
| 7176090 | Method for making a semiconductor device that includes a metal gate electrode A method for making a semiconductor device is described. That method comprises forming on a substrate a dielectric layer and a sacrificial structure that comprises a first layer and a second layer, such that the second layer is formed on the first layer and is wider... | 02/13/2007 |
| 7165560 | Etching method, etching apparatus, and method for manufacturing semiconductor device In order to reliably remove, by wet etching, a compound containing a metal and silicon, e.g., a silicate (101a) containing hafnium metal, the silicate (101a) is oxidized and then the oxidized silicate (101a) is wet-etched. | 01/23/2007 |
| 7166539 | Wet etching method of removing silicon from a substrate A wet etching method of removing silicon from a substrate includes depositing a layer comprising silicon in elemental form over a substrate. The layer is exposed to an aqueous liquid etching solution comprising a hydroxide and a fluoride, and having a pH of at least... | 01/23/2007 |
| 7160779 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer that contacts a metal oxide layer. The metal oxide layer is generated by forming a metal layer, then oxidizing the metal layer. ... | 01/09/2007 |
| 7153734 | CMOS device with metal and silicide gate electrodes and a method for making it A semiconductor device and a method for forming it are described. The semiconductor device comprises a metal NMOS gate electrode that is formed on a first part of a substrate, and a silicide PMOS gate electrode that is formed on a second part of the substrate. ... | 12/26/2006 |
| 7148149 | Method for fabricating nitride-based compound semiconductor element A method for fabricating a nitride semiconductor element according to the present invention comprises the steps of: forming a nitride semiconductor layer 13 on a base substrate 11; forming, on part of the upper surface of the nitride semiconductor laye... | 12/12/2006 |
| 7129160 | Method for simultaneously removing multiple conductive materials from microelectronic substrates A method and apparatus for simultaneously removing conductive materials from a microelectronic substrate. A method in accordance with one embodiment of the invention includes contacting a surface of a microelectronic substrate with an electrolytic liquid, the microe... | 10/31/2006 |
| 7083679 | Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 08/01/2006 |
| 7084038 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperat... | 08/01/2006 |
| 7074680 | Method for making a semiconductor device having a high-k gate dielectric A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperat... | 07/11/2006 |
| 7064082 | Methods for forming pin alloy-semiconductor devices with rectifying junction contacts The present invention pertains to a more efficient system and method for forming rectifying junction contacts in PIN alloy-semiconductor devices using photoelectrical and chemical etching. The present invention provides a means of creating rectifying junction contac... | 06/20/2006 |
| 7064066 | Method for making a semiconductor device having a high-k gate dielectric and a titanium carbide gate electrode A method for making a titanium carbide layer is described. That method comprises alternately introducing a carbon containing precursor and a titanium containing precursor into a chemical vapor deposition reactor, while a substrate is maintained at a selected tempera... | 06/20/2006 |
| 7049235 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes a process for forming a photoresist pattern. In the disclosed process, residual photoresist polymers are removed using a photoresist polymer remover composition that includes: (a) 5% to 15% of sulfuric acid b... | 05/23/2006 |
| 7041554 | Methods of fabricating flash memory devices having self aligned shallow trench isolation structures Flash memory devices are provided including an integrated circuit substrate and a stack gate structure on the integrated circuit substrate. A trench isolation region is provided on the integrated circuit substrate adjacent the stack gate structure. A portion of the ... | 05/09/2006 |
| 7026255 | Method and device for photo-electrochemically etching a semiconductor sample, especially gallium nitride In a method for photo-electrochemical etching of a semiconductor sample, the semiconductor sample is brought in contact with an electrolyte liquid. The contact area formed thereby is illuminated through the electrolyte liquid with UV light. The photo-current created... | 04/11/2006 |
| 7018936 | Ion implant lithography method of processing a semiconductor substrate A method of masking and etching a semiconductor substrate includes forming a layer to be etched over a semiconductor substrate. An imaging layer is formed over the layer to be etched. Selected regions of the imaging layer are removed to leave a pattern of openings e... | 03/28/2006 |
| 7018938 | Controlled use of photochemically susceptible chemistries for etching, cleaning and surface conditioning Radiant energy may be applied to a photochemically susceptible etching or conditioning solution to enable precise control of the removal of material or alteration of the top surface of a wafer during the fabrication of semiconductor integrated circuits. A particular... | 03/28/2006 |
| 6989312 | Method for fabricating semiconductor optical device Provided is a method for fabricating a semiconductor optical device that can be used as a reflecting semiconductor mirror or an optical filter, in which two or more types of semiconductor layers having different etch rates are alternately stacked, at least one type ... | 01/24/2006 |
| 6943124 | Two step exposure to strengthen structure of polyimide or negative tone photosensitive material A method is provided for forming features in a polyimide layer that is employed as an insulating layer or buffer layer during the fabrication of semiconductor devices or chip packaging structures. A pattern is formed in a photosensitive layer that has a high film re... | 09/13/2005 |
| 6939734 | Method for producing a protective cover for a device In a method for producing a protective cover for a device which is formed in a substrate, a first cover layer is initially deposited on the substrate, the first cover layer covering an area of the substrate which includes the device. Subsequently, an opening is form... | 09/06/2005 |
| 6940103 | Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device A method of growing a nitride semiconductor crystal which has very few crystal defects and can be used as a substrate is disclosed. This invention includes the step of forming a first selective growth mask on a support member including a dissimilar substrate having ... | 09/06/2005 |
| 6914008 | Structure having pores and its manufacturing method A structure having pores includes a first layer containing alumina, a second layer that includes at least one of Ti, Zr, Hf, Nb, Ta, Mo, W and Si, and a third layer with electrical conductivity, in this order, wherein the first and second layers have pores. ... | 07/05/2005 |
| 6897161 | Method of cleaning component in plasma processing chamber and method of producing semiconductor devices A component having small holes, such as a silicon electrode plate having gas nozzles, used in a plasma processing apparatus is cleaned by producing a cavitation zone that extends through an entire depth of the holes so that deposited layers on the inner walls of the... | 05/24/2005 |
