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| Number | Title | Issue Date |
| 8158530 | Methods for retaining metal-comprising materials using liquid chemistry dispense systems from which oxygen has been removed Methods for fabricating a semiconductor device from a semiconductor substrate having a metal-comprising material and a disposable material are provided. In accordance with an exemplary embodiment, the method comprises providing a system for exposing the disposable m... | 04/17/2012 |
| 8153533 | Methods and systems for preventing feature collapse during microelectronic topography fabrication Methods for preventing feature collapse subsequent to etching a layer encasing the features include adding a non-aqueous liquid to a microelectronic topography having remnants of an aqueous liquid arranged upon its surface and subsequently exposing the topography to... | 04/10/2012 |
| 8143172 | Printable etching media for silicon dioxide and silicon nitride layers The present invention relates to a novel printable etching medium having non-Newtonian flow behavior for the etching of surfaces in the production of solar cells, and to the use thereof. The present invention furthermore also relates to etching and doping media whic... | 03/27/2012 |
| 8138098 | Method of patterning stacked structure A stacked structure including a soluble organic semiconductor material and a water soluble photosensitive material is provided. The water soluble photosensitive material is disposed on the surface of the soluble organic semiconductor material. ... | 03/20/2012 |
| 8129287 | Method for manufacturing semiconductor device and semiconductor device A first oxide film and a second oxide film 16 are formed in a first region 13a and a second region 13b, respectively, on the surface of the semiconductor substrate 10, via thermal oxidization method, and the first oxide film... | 03/06/2012 |
| 8124544 | Method for manufacturing semiconductor device It is an object of the present invention to provide a semiconductor device including a wiring having a preferable shape. A manufacturing method includes the steps of forming a first conductive layer connected to an element and a second conductive layer thereover; fo... | 02/28/2012 |
| 8110508 | Method of forming a bump structure using an etching composition for an under bump metallurgy layer In an etching composition for an under-bump metallurgy (UBM) layer and a method of forming a bump structure, the etching composition includes about 40% by weight to about 90% by weight of hydrogen peroxide (H2O2), about 1% by weight to about 20... | 02/07/2012 |
| 8088693 | Substrate treatment method There is provided a substrate treatment method for performing treatment by feeding a chemical liquid to a surface of a substrate, in which, before feeding the chemical liquid to a predetermined area of the substrate, a liquid substance having a resistivity lower tha... | 01/03/2012 |
| 8084367 | Etching, cleaning and drying methods using supercritical fluid and chamber systems using these methods Provided herein are etching, cleaning and drying methods using a supercritical fluid, and a chamber system for conducting the same. The etching method includes etching the material layer using a supercritical carbon dioxide in which an etching chemical is dissolved,... | 12/27/2011 |
| 8058180 | Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture This invention provides methods of fabricating semiconductor devices, wherein an alloy layer is formed on a semiconductor substrate to form a substrate structure, which methods include using an aqueous solution diluted ammonia and peroxide mixture (APM) to perform c... | 11/15/2011 |
| 7994067 | Semiconductor manufacturing equipment with an open-topped cassette apparatus A semiconductor manufacturing apparatus and a semiconductor manufacturing method, and has as one object to process a wafer easily and stably irrespective of thickness. To achieve the above object, a semiconductor manufacturing apparatus includes: an open-topped cass... | 08/09/2011 |
| 7960289 | Etching method, pattern forming process, thin-film transistor fabrication process, and etching solution An etching method is provided in which selective etching can be carried out for an amorphous oxide semiconductor film including at least one of gallium and zinc, and indium. In the etching method, the selective etching is performed using an alkaline etching solution... | 06/14/2011 |
| 7955989 | Texturing semiconductor substrates Semiconductors are textured with aqueous solutions containing non-volatile alkoxylated glycols, their ethers and ether acetate derivatives having molecular weights of 170 or greater and flash points of 75° C. or greater. The textured semiconductors can be used in t... | 06/07/2011 |
| 7951724 | Wafer fixture for wet process applications The present invention is a wafer fixture comprising a housing body, a thrust plate, a flexure clamp, gaskets, flexure pins on an inner circumference of the housing body, locking grooves on an outer circumference of the flexure clamp, and a handle. A wafer may be pla... | 05/31/2011 |
| 7935642 | Replenishment method for an advanced coating removal stripping solution A method for calculating the amount of solution components to add to an advanced coating removal (ACR) stripping solution in a coating removal stripping bath to replenish and recover stripping potential. The stripping effectiveness may be restored by the addition of... | 05/03/2011 |
| 7923375 | Method for manufacturing semiconductor device A method for manufacturing a semiconductor device includes forming a photo-resist pattern above a first film, implanting a predetermined dopant that increases an etching rate of the first film into the first film using the photo-resist pattern as a mask, thereby for... | 04/12/2011 |
| 7906437 | System and method for the manufacture of surgical blades A method for manufacturing surgical blades from either a crystalline or poly-crystalline material, preferably in the form of a wafer, is disclosed. The method includes preparing the crystalline or poly-crystalline wafers by mounting them and machining trenches into ... | 03/15/2011 |
| 7906438 | Single wafer etching method An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal i... | 03/15/2011 |
| 7888270 | Etching method for nitride semiconductor The invention discloses etching method for the nitride semiconductor. Firstly dielectric layer is formed on gallium nitride. The line pattern or dot pattern is formed on the dielectric layer by using the exposure, development, and etching processes. The dielectric l... | 02/15/2011 |
| 7884028 | Method of removing material layer and remnant metal A method of removing material layer is disclosed. First, a semiconductor substrate is fixed on a rotating platform, where a remnant material layer is included on the surface of the semiconductor substrate. Afterward, an etching process is carried out. In the etching... | 02/08/2011 |
| 7884027 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes subjecting a semiconductor substrate having an aluminum film formed thereabove to a processing to at least partially expose a surface of the aluminum film, and carrying out a surface processing to remove an a... | 02/08/2011 |
| 7879734 | Method of manufacturing porous body A nanostructure is a porous body comprising a plurality of pillar-shaped pores and a region surrounding them, the region being an oxide amorphous region formed so as to contain C, Si, Ge or a material of a combination of them. Such a nanostructure can be used as a f... | 02/01/2011 |
| 7875557 | Semiconductor substrate treating method, semiconductor component and electronic appliance A semiconductor substrate treating method is disclosed that can selectively remove contaminants or unnecessary substances present on the surface of a semiconductor substrate. Also disclosed are a semiconductor component of enhanced reliability produced by this metho... | 01/25/2011 |
| 7875558 | Microetching composition and method of using the same The present invention is directed to a microetching composition comprising a source of cupric ions, acid, a nitrile compound, and a source of halide ions. Other additive, including organic solvents, a source of molybdenum ions, amines, polyamines, and acrylamides ma... | 01/25/2011 |
| 7871936 | Method of manufacturing active matrix display device A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT... | 01/18/2011 |
| 7855152 | Method of producing active matrix substrate The invention provides a production method for an active matrix substrate in which a plurality of contact holes are formed by a one-mask process so as to reach metal films which are present at different depth positions in an insulating layer and are not evaporated b... | 12/21/2010 |
| 7851372 | Composition for removing an insulation material, method of removing an insulation layer and method of recycling a substrate using the same In one aspect, a composition is provided which is capable of removing an insulation material which includes at least one of a low-k material and a passivation material. The composition of this aspect includes about 5 to about 40 percent by weight of a fluorine compo... | 12/14/2010 |
| 7851373 | Processing systems and methods for semiconductor devices Systems and methods for processing semiconductor devices are disclosed. A preferred embodiment comprises a processing method that includes providing a processing system including a first container and a second container fluidly coupled to the first container, the se... | 12/14/2010 |
| 7851374 | Silicon wafer reclamation process By exposing a process control wafer having a porous low-k-dielectric layer thereon in an HF-based low-k dielectric etching solvent comprising a dilating additive and a passivating additive, the pores in the low-k dielectric layer are dilated some of which connect wi... | 12/14/2010 |
| 7816275 | Gate patterning of nano-channel devices Methodologies and gate etching processes are presented to enable the fabrication of gate conductors of semiconductor devices, such as NFETs and/or PFETs, which are equipped with nano-channels. In one embodiment, a sacrificial spacer of equivalent thickness to the di... | 10/19/2010 |
| 7790621 | Ion implantation for increasing etch rate differential between adjacent materials Ion implantation is used to modify the chemical properties of portions of a material, such that the modified portions respond differently to a chemical etching operation than do the unmodified portions of the material. In a further aspect of the present invention, i... | 09/07/2010 |
| 7790622 | Methods for removing gate sidewall spacers in CMOS semiconductor fabrication processes Semiconductor fabrication processes are provided for removing sidewall spacers from gate structures while mitigating or otherwise preventing defect mechanisms such as damage to metal silicide structures or otherwise impeding or placing limitations on subsequent proc... | 09/07/2010 |
| 7790624 | Methods for removing a metal-comprising material from a semiconductor substrate Methods for removing metal-comprising materials from semiconductor materials are provided. In accordance with an exemplary embodiment, a method comprises providing a metal-comprising material overlying a semiconductor material and exposing the metal-comprising mater... | 09/07/2010 |
| 7776754 | Semiconductor device manufacturing method and chemical fluid used for manufacturing semiconductor device This disclosure is concerned a method of manufacturing a semiconductor device which includes providing an dielectric film on a substrate; providing a mask material on the dielectric film; etching the dielectric film using the mask material; performing a first treatm... | 08/17/2010 |
| 7776755 | Solution for polymer and capping layer removing with wet dipping in HK metal gate etching process The present disclosure provides a method for making metal gate stacks of a semiconductor device. The method includes applying a first etching process to the substrate to remove a polysilicon layer and a metal gate layer on the substrate; applying a diluted hydrofluo... | 08/17/2010 |
| 7763548 | Microfeature workpiece processing system for, e.g., semiconductor wafer analysis The present disclosure suggests apparatus and methods that can be used to chemically process microfeature workpieces, e.g., semiconductor wafers. One implementation of the invention provides a method in which a surface of a microfeature workpiece is contacted with a... | 07/27/2010 |
| 7763549 | Semiconductor device manufacturing method for preventing patterns from inclining in drying process A method of manufacturing a semiconductor device of the present invention has the steps of forming a pattern made of a processed film or a resist on a substrate, washing the pattern with a washing liquid which is a liquid including at least water, spreading an amphi... | 07/27/2010 |
| 7745345 | ZnO based semiconductor device manufacture method A manufacture method for a ZnO based semiconductor device includes the steps of: (a) preparing a ZnO based semiconductor wafer including a ZnO based semiconductor substrate having a wurzeit structure with a +C plane on one surface and a −C plane on an opposite sur... | 06/29/2010 |
| 7732345 | Method for using a modified post-etch clean rinsing agent The present invention provides a method for manufacturing an integrated circuit. In one embodiment, the method includes etching one or more openings within a substrate using an etch tool, and subjecting the one or more openings to a post-etch clean, wherein a delay ... | 06/08/2010 |
| 7732346 | Wet cleaning process and method for fabricating semiconductor device using the same A wet cleaning process is provided. The wet cleaning process includes at least one first rinse process and a second rinse step. The first rinse step includes rinsing a substrate using deionized water containing CO2, and then draining the water containing ... | 06/08/2010 |
