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| Number | Title | Issue Date |
| 7432166 | Methods of forming a nitrogen enriched region The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed wi... | 10/07/2008 |
| 7396480 | Method for front end of line fabrication A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surfac... | 07/08/2008 |
| 7341922 | Dry etching method, fabrication method for semiconductor device, and dry etching apparatus When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically,... | 03/11/2008 |
| 7329609 | Substrate processing method and substrate processing apparatus In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive memb... | 02/12/2008 |
| 7312157 | Methods and apparatus for cleaning semiconductor devices Methods and apparatus for cleaning a semiconductor device are disclosed. A disclosed method comprises forming a capping layer on top of a substrate including a bottom interconnect layer; depositing and patterning an insulating layer on the capping layer to form a da... | 12/25/2007 |
| 7252738 | Apparatus for reducing polymer deposition on a substrate and substrate support An adjustable RF coupling ring is capable of reducing a vertical gap between a substrate and a hot edge ring in a vacuum processing chamber. The reduction of the gap reduces polymer deposits on the substrate and electrostatic chuck and improves wafer processing.... | 08/07/2007 |
| 7232985 | Controlled fusion in a field reversed configuration and direct energy conversion A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are elect... | 06/19/2007 |
| 7223446 | Plasma CVD apparatus and dry cleaning method of the same In a parallel flat plate type plasma CVD apparatus, plasma damage of constituent parts in a reaction chamber due to irregularity of dry cleaning in the reaction chamber is reduced and the cost is lowered. In the parallel flat plate type plasma CVD apparatus in which... | 05/29/2007 |
| 7214628 | Plasma gate oxidation process using pulsed RF source power A method of fabricating a gate of a transistor device on a semiconductor substrate, includes the steps of placing the substrate in a vacuum chamber of a plasma reactor and introducing into the chamber a process gas that includes oxygen while maintaining a vacuum pre... | 05/08/2007 |
| 7183130 | Magnetic random access memory and method of fabricating thereof A device structure and method for forming an interconnect structure in a magnetic random access memory (MRAM) device. In an exemplary embodiment, the method includes defining a magnetic stack layer on a lower metallization level, the magnetic stack layer including a... | 02/27/2007 |
| 7118992 | Wafer thinning using magnetic mirror plasma A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segr... | 10/10/2006 |
| 7112536 | Plasma processing system and method A plasma processing system and method wherein a power source produces a magnetic field and an electric field, and a window disposed between the power source and an interior of a plasma chamber couples the magnetic field into the plasma chamber thereby to couple powe... | 09/26/2006 |
| 7094706 | Device and method for etching a substrate by using an inductively coupled plasma A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles... | 08/22/2006 |
| 7086347 | Apparatus and methods for minimizing arcing in a plasma processing chamber A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber durin... | 08/08/2006 |
| 7033514 | Method and apparatus for micromachining using a magnetic field and plasma etching This invention relates to a method and apparatus for forming a micromachined device, where a workpiece is plasma etched to define a microstructure. The plasma etching is conducted in the presence of a magnetic field, which can be generated and manipulated by an elec... | 04/25/2006 |
| 7002148 | Controlled fusion in a field reversed configuration and direct energy conversion A system and apparatus for controlled fusion in a field reversed configuration (FRC) magnetic topology and conversion of fusion product energies directly to electric power. Preferably, plasma ions are magnetically confined in the FRC while plasma electrons are elect... | 02/21/2006 |
| 6977229 | Manufacturing method for semiconductor devices The present invention is provided to prevent yield reduction of semiconductor device in dry cleaning of semiconductor device manufacturing process. The electric action and chemical action due to plasma of a first gas generated by means of a plasma generating means a... | 12/20/2005 |
| 6960528 | Method of forming a nanotip array in a substrate by forming masks on portions of the substrate and etching the unmasked portions Nanotip arrays are formed by exposing a substrate to a process gas mixture that simultaneously forms nanomasks on the substrate surface and etches exposed portions of the substrate surface to form the nanotip array. Components of the process gas mixture form nanocry... | 11/01/2005 |
| 6943104 | Method of etching insulating film and method of forming interconnection layer A method of rapid etching of an insulating film including an organic-based dielectric film without forming a damage layer or causing decline of the throughput, including the steps of forming an insulating film including an organic-based dielectric film such as a sta... | 09/13/2005 |
| 6933236 | Method for forming pattern using argon fluoride photolithography A method for forming a photoresist pattern with minimally reduced transformations through the use of ArF photolithography, including the steps of: forming an organic anti-reflective coating layer on a an etch-target layer already formed on a substrate; coating a pho... | 08/23/2005 |
| 6932092 | Method for cleaning plasma enhanced chemical vapor deposition chamber using very high frequency energy A method for cleaning a plasma enhanced chemical vapor deposition chamber. The method includes introducing a cleaning gas into the plasma enhanced chemical vapor deposition chamber, forming a plasma using a very high frequency (VHF) power having a frequency in a ran... | 08/23/2005 |
| 6793835 | System level in-situ integrated dielectric etch process particularly useful for copper dual damascene An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, a dielectri... | 09/21/2004 |
| 6793965 | Clog resistant injection valve An injection valve is provided with vibration to dislodge residue therefrom and to thus avoid injection valve clogging. A wave generator which preferably generates an ultrasonic sine wave, is operatively coupled to the vaporization region of the injection valve (i.e... | 09/21/2004 |
| 6713401 | Method for manufacturing semiconductor device Disclosed is a method for manufacturing a semiconductor device which efficiently carries out a process on a semiconductor substrate, such as dry etching, and cleaning for removing a foreign matter after the process. The method includes a step of removing a foreign m... | 03/30/2004 |
| 6673199 | Shaping a plasma with a magnetic field to control etch rate uniformity A substrate etching chamber has a substrate support, a gas supply to introduce a process gas into the chamber; an inductor antenna to sustain a plasma of the process gas in a process zone of the chamber, and an exhaust to exhaust the process gas. A magnet... | 01/06/2004 |
| 6653245 | Method for liquid phase deposition A method for liquid phase deposition, including the steps of providing at least two raw materials from at least two supply devices of a saturation reaction system into a mixture trough and stirring until saturation occurs, filtering out unnecessary solid-... | 11/25/2003 |
| 6624084 | Plasma processing equipment and plasma processing method using the same In plasma processing equipment having a vacuum processing chamber, a plasma generation means, a stage for loading a wafer to be processed in the vacuum processing chamber, an opposing electrode having an area almost equal to or wider than the aforemention... | 09/23/2003 |
| 6613434 | Method for treating polymer surface The invention concerns a method for treating a surface for the protection and functionalisation of polymers (4) by gas plasma deposit in a confined chamber (10) of one or several silicon alloy layers (43). The silicon alloy is selected among silicon and i... | 09/02/2003 |
| 6573190 | Dry etching device and dry etching method A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch processing of the fine pattern of a semiconductor device.... | 06/03/2003 |
| 6563148 | Semiconductor device with dummy patterns The semiconductor device includes a semiconductor substrate and, in an element isolating region in the semiconductor substrate, a first active area A/A dummy pattern and a second A/A dummy pattern having a pitch smaller than that of the first A/A dummy pa... | 05/13/2003 |
| 6506687 | Dry etching device and method of producing semiconductor devices A technique of dry etching the surface of a wafer by using a dry etching apparatus in which the distance between a wafer and a surface facing the wafer is set to the half or less of the diameter of the wafer is disclosed. Even in the case of using, especi... | 01/14/2003 |
| 6500357 | System level in-situ integrated dielectric etch process particularly useful for copper dual damascene An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. The process includes transferring a substrate having formed thereon in a downward direction a patterned photoresist mask, ... | 12/31/2002 |
| 6488863 | Plasma etching method An etching gas is supplied into a process chamber and turned into plasma so as to etch a silicon nitride film arranged on a field silicon oxide film on a wafer (w). A mixture gas containing at least CH2 F2 gas and O2 gas i... | 12/03/2002 |
| 6475918 | Plasma treatment apparatus and plasma treatment method An etching method capable of obtaining a fine fabricated shape, particularly, a vertical fabricated shape with less bowing upon fabrication of insulation films in the production of semiconductors, the method comprising controlling the incident amount of O... | 11/05/2002 |
| 6461972 | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow A dual plasma process generates a microwave neutral plasma remote from a semiconductor wafer and a radio frequency (RF) ionized plasma adjacent to the wafer for simultaneous application to the wafer. A first gas flows through a microwave plasma generation... | 10/08/2002 |
| 6429140 | Method of etching of photoresist layer A method of forming a patterned photoresist layer is performed in a nitrogen gas atmosphere. The method includes the steps of sequentially forming a layer to be etched and first photoresist layer on a semiconductor substrate, and sequentially forming an i... | 08/06/2002 |
| 6376388 | Dry etching with reduced damage to MOS device A method of manufacturing a semiconductor device having an insulated gate type field effect transistor. A gate insulating film, a gate electrode layer having a predetermined area and facing the semiconductor substrate with the gate insulating film being i... | 04/23/2002 |
| 6372654 | Apparatus for fabricating a semiconductor device and method of doing the same There is provided a method of fabricating a semiconductor device, including the steps of (a) generating plasma in the following conditions: (a1) an RF bias voltage has a frequency equal to or greater than 1 MHz, (a2) an RF source voltage has a frequency e... | 04/16/2002 |
| 6350701 | Etching system A small, light-weight and highly maintainable etching system and an etching method for etching a large substrate with a homogeneous etching rate are provided. The etching system comprises an agitating electric field system disposed around the substrate, a... | 02/26/2002 |
| 6333246 | Semiconductor device manufacturing method using electrostatic chuck and semiconductor device manufacturing system A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the nega... | 12/25/2001 |
