Quotables
"Everyone acquainted with the subject will recognize it as a conspicuous failure."
Henry Morton, president of the Stevens Institute of Technology ; Said in 1880 about the light bulb
PatentStorm News
Make the Most of Our Site
See this month's Top Inventors and Most Cited Patents.
Stay on top of the latest innovations by subscribing to an RSS feed.
Registered users: Manage your profile.
| Number | Title | Issue Date |
| 8171441 | Integrated circuit devices and methods and apparatuses for designing integrated circuit devices Methods and apparatuses to design an Integrated Circuit (IC) with a shielding of wires. In at least one embodiment, a shielding mesh of at least two reference voltages (e.g., power and ground) is used to reduce both the capacitive coupling and the inductive coupling... | 05/01/2012 |
| 8166434 | Integrated circuit devices and methods and apparatuses for designing integrated circuit devices Methods and apparatuses to design an Integrated Circuit (IC) with a shielding of wires. In at least one embodiment, a shielding mesh of at least two reference voltages (e.g., power and ground) is used to reduce both the capacitive coupling and the inductive coupling... | 04/24/2012 |
| 8161442 | Integrated circuit devices and methods and apparatuses for designing integrated circuit devices Methods and apparatuses to design an Integrated Circuit (IC) with a shielding of wires. In at least one embodiment, a shielding mesh of at least two reference voltages (e.g., power and ground) is used to reduce both the capacitive coupling and the inductive coupling... | 04/17/2012 |
| 8122412 | Shelding mesh design for an integrated circuit device Methods and apparatuses to design an Integrated Circuit (IC) with a shielding of wires. In at least one embodiment, a shielding mesh of at least two reference voltages (e.g., power and ground) is used to reduce both the capacitive coupling and the inductive coupling... | 02/21/2012 |
| 7432209 | Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant material A plasma etch process with in-situ backside polymer removal begins with a workpiece having a porous or non-porous carbon-doped silicon oxide dielectric layer and a photoresist mask on a surface of the workpiece. The workpiece is clamped onto an electrostatic chuck i... | 10/07/2008 |
| 7335601 | Method of processing an object and method of controlling processing apparatus to prevent contamination of the object A method of manufacture includes processing an object in a chamber and subsequently generating an electrical force of attraction to float contaminants off of a region adjacent the processed object before the object is unloaded from the chamber. The object may be pro... | 02/26/2008 |
| 7309646 | De-fluoridation process A feature in a layer is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls, where the photoresist features have a first critical dimension. A fluorine-containing conforma... | 12/18/2007 |
| 7274048 | Substrate based ESD network protection for a flip chip In accordance with the objectives of the invention a new arrangement is provided for ESD protection of mounted flip chips. In a first embodiment of the invention, the Input/Output cells and power cells are provided with ESD protection that is connected to a dedicate... | 09/25/2007 |
| 7234412 | Semiconductor substrate deposition processor chamber liner apparatus A method includes removing at least a piece of a deposition chamber liner from a deposition chamber by passing it through a passageway to the deposition chamber through which semiconductor substrates pass into and out of the chamber for deposition processing. A repl... | 06/26/2007 |
| 7166167 | Laser CVD device and laser CVD method A laser CVD device capable of tightening adhesion of a film formed by laser CVD to a film formation face of a substrate and preventing cracks from occurring in the film itself is to be provided. The device comprises a plasma pretreating unit for turning pretreating ... | 01/23/2007 |
| 7156950 | Gas diffusion plate for use in ICP etcher A gas diffusion plate supplying process gases into a chamber of an ICP (inductively coupled plasma) etcher is provided in the present invention. The gas diffusion plate includes a porous plate comprised of a plurality of balls and formed by compressing and curing th... | 01/02/2007 |
| 7015569 | Method and apparatus for implementing a co-axial wire in a semiconductor chip A coaxial shield for a semiconductor chip includes: a top vertical shield wire formed in a top metal layer of a semiconductor chip wherein the top vertical shield wire has a selected length for providing a coaxial shield; a first side shield wire formed in an interm... | 03/21/2006 |
| 6991739 | Method of photoresist removal in the presence of a dielectric layer having a low k-value A method of photoresist removal is described. A substrate is located in a processing chamber. A mixture of gases is excited, the mixture comprising a majority component of a reducing process gas and a minority component of between 0.1% and 10% by volume of an oxidiz... | 01/31/2006 |
| 6974550 | Apparatus and method for controlling the voltage applied to an electrostatic shield used in a plasma generator An apparatus for controlling the voltage applied to a shield interposed between an induction coil powered by a power supply via a matching network, and the plasma it generates, comprises a shield, a first feedback circuit, and a second feedback circuit. The power su... | 12/13/2005 |
| 6949203 | System level in-situ integrated dielectric etch process particularly useful for copper dual damascene An integrated in situ etch process performed in a multichamber substrate processing system having first and second etching chambers. In one embodiment the first chamber includes an interior surface that has been roughened to at least 100 Ra and the second... | 09/27/2005 |
| 6887340 | Etch rate uniformity An etching apparatus has a chamber enclosing a first electrode, a second electrode, confinement rings, a focus ring, and a shield. The first electrode is coupled to a source of a fixed potential. The second electrode is coupled to a dual frequency RF power source. T... | 05/03/2005 |
| 6853055 | Radiation shielding die carrier package A semiconductor die carrier includes a radiation shielding base having a radiation shielding integrated base flange extending orthogonally from an upper surface of the base, the integrated base flange having an upper surface. A substrate is disposed on the radiation... | 02/08/2005 |
| 6822311 | DC or AC electric field assisted anneal A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at l... | 11/23/2004 |
| 6744117 | High frequency semiconductor device and method of manufacture A semiconductor device (10) having a gate (15), a source (19), and a drain (20) with a gate bus (25) and first ground shield (24) patterned from a first metal layer and a second ground shield (31) patterned from a sec... | 06/01/2004 |
| 6703092 | Resin molded article for chamber liner A resin molded article for fitting to an inside wall of a liner in a chamber of a dry etching apparatus used in semiconductor manufacture is disclosed. The resin molded article is a seamless annular molded article having a heat resistance temperature of a... | 03/09/2004 |
| 6666982 | Protection of dielectric window in inductively coupled plasma generation To protect a dielectric window in an inductively coupled plasma reactor from depositions of coating or etched material from the plasma, a dielectric insert is placed inside of the chamber closely adjacent the window. Where a slotted shield inside of the w... | 12/23/2003 |
| 6656846 | Apparatus for processing samples Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample... | 12/02/2003 |
| 6585907 | Method for manufacturing a shield for an inductively-couple plasma apparatus An inductive-coupled plasma apparatus employs a shield to reduce sputter contamination. A method for manufacturing the shield is included. An apparatus for generating a high-density plasma includes a process chamber having a dielectric window located alon... | 07/01/2003 |
| 6465363 | Vacuum processing method and vacuum processing apparatus A vacuum processing apparatus produces fluorine radicals by activating a fluorinating gas containing at least fluorine atoms and fluorinates the surface of a component formed of an organic material (32) exposed to an atmosphere of a processing chamber (2)... | 10/15/2002 |
| 6436303 | Film removal employing a remote plasma source A method and device for removing film from a substrate are provided that take advantage of a remote plasma source to etch away undesired portions of films, such as dielectric films formed on a substrate. To that end, the method includes forming a plasma r... | 08/20/2002 |
| 6387817 | Plasma confinement shield Improvements of the shielding of the reactor chamber in a radio frequency (RF) reactor are realized by providing dressed edges on the apertures found in the shield. These improvements to the reactor chamber lead to decreased defect density on processed wa... | 05/14/2002 |
| 6258287 | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment A method of low-damage, anisotropic etching of substrates including mounting the substrate upon a mechanical support located within an ac or dc plasma reactor. The mechanical support is independent of the plasma reactor generating apparatus and capable of... | 07/10/2001 |
| 6245192 | Gas distribution apparatus for semiconductor processing A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chambe... | 06/12/2001 |
| 6245686 | Process for forming a semiconductor device and a process for operating an apparatus A process for forming a semiconductor device includes placing a substrate (104) into an apparatus (300), creating a plasma, and processing the substrate (104). The apparatus (300) includes an electromagnetic source (120), a bulk material (302), and a firs... | 06/12/2001 |
| 6221782 | Adjusting DC bias voltage in plasma chamber A method of adjusting the cathode DC bias in a plasma chamber for fabricating semiconductor devices. A dielectric shield is positioned between the plasma and a selected portion of the electrically grounded components of the chamber, such as the electrical... | 04/24/2001 |
| 6214161 | Method and apparatus for anisotropic etching of substrates Method, apparatus and plasma processing system for anisotropic etching of a substrate using a plasma. A high-frequency alternating electromagnetic field is generated using an inductive coupled plasma source, and a reactive gas or reactive gas mixture is e... | 04/10/2001 |
| 6132566 | Apparatus and method for sputtering ionized material in a plasma An external inductive coil is used in a plasma process system having a dielectric shield which separates the coil from the plasma. The shield includes channels provided along the inner side of the shield facing the plasma region. The channels inhibit the ... | 10/17/2000 |
| 5968275 | Methods and apparatus for passivating a substrate in a plasma reactor A plasma processing system configured for use in processing a substrate after metal etching. The substrate includes a layer of photoresist disposed thereon. The plasma processing system includes a plasma generating region and a baffle plate disposed betwe... | 10/19/1999 |
| 5945354 | Method for reducing particles deposited onto a semiconductor wafer during plasma processing A method for reducing particles (235) during a semiconductor process. A semiconductor substrate (230) is placed into a processing chamber (210). A processing pressure (108) is applied within the chamber (212). A processing power (102) is applied to the ch... | 08/31/1999 |
| 5945351 | Method for etching damaged zones on an edge of a semiconductor substrate, and etching system The apparatus and method of the invention allow etching of the edge of a semiconductor substrate even where no resist is applied to the front side and back side of the semiconductor substrate. The semiconductor substrate is introduced into a protective ch... | 08/31/1999 |
| 5904571 | Methods and apparatus for reducing charging during plasma processing An apparatus and method in a plasma processing chamber for reducing charging of a wafer is described. A plasma generating element is configured to cause a plasma including ions and free radicals to be formed in a plasma generating region. A plasma diffusi... | 05/18/1999 |
| 5824604 | Hydrocarbon-enhanced dry stripping of photoresist Means for increasing the selectivity of photoresist stripping to oxide etching are disclosed. A plasma of an oxidizing gas, a fluoride-containing compound, and a hydrocarbon contains reactive species that preferentially strip photoresist from a substrate ... | 10/20/1998 |
| 5811022 | Inductive plasma reactor A plasma reactor and methods for processing semiconductor wafers are described. Gases are introduced into a reactor chamber. An induction coil surrounds the reactor chamber. RF power is applied to the induction coil and is inductively coupled into the rea... | 09/22/1998 |
| 5759922 | Control of etch profiles during extended overetch An etch process to substantially eliminate notching in sub-micron features by exposing a wafer to a chlorine plasma; operating the plasma under conditions which reduce the relative role of ions in the etch (as compared to neutrals in the etch); and essent... | 06/02/1998 |
| 5733821 | Process for fabricating semiconductor devices A downflow-type ashing apparatus comprises a microwave guide for feeding microwaves, a plasma generating chamber for generating O2 plasmas by the microwaves fed into the microwave guide, and an ashing reaction chamber for ashing by the oxygen a... | 03/31/1998 |
