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| Number | Title | Issue Date |
| 7329609 | Substrate processing method and substrate processing apparatus In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive memb... | 02/12/2008 |
| 7312157 | Methods and apparatus for cleaning semiconductor devices Methods and apparatus for cleaning a semiconductor device are disclosed. A disclosed method comprises forming a capping layer on top of a substrate including a bottom interconnect layer; depositing and patterning an insulating layer on the capping layer to form a da... | 12/25/2007 |
| 7256129 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming a hard mask layer on the inter-layer insulation layer; etching the hard mask layer using a contact mask; and etching the... | 08/14/2007 |
| 7253079 | Coplanar mounting member for a MEM sensor A coplanar mounting member for a MEM sensor includes a first surface coplanar with a connection pad on the surface of a MEM sensor board containing the MEM sensor control circuit; a second surface inclined to the surface of the board for mounting a MEM sensor and an... | 08/07/2007 |
| 7247575 | Multi-step EBR process for photoresist removal An edge bead removal process is disclosed. The process includes providing a wafer having a feature layer, coating a photoresist on the feature layer, rotating the wafer, and removing an edge bead from the wafer by removing an edge bump portion from the edge bead and... | 07/24/2007 |
| 7232762 | Method for forming an improved low power SRAM contact A method of forming contact openings in a semiconductor device including providing a semiconducting substrate; forming an etch stop layer on said semiconducting substrate; forming a dielectric layer on said etch stop layer; forming a bottom anti-reflective coating (... | 06/19/2007 |
| 7166534 | Method of dry cleaning photoresist strips after via contact etching Semiconductor manufacturing processes that reduce production costs as well as increase throughput by substituting the PR strip and ACT wet cleaning procedure after the via contact etching of a semiconductor with dry cleaning to be performed while removing a photores... | 01/23/2007 |
| 7125786 | Method of forming vias in silicon carbide and resulting devices and circuits A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon... | 10/24/2006 |
| 7109122 | Method and apparatus for reducing substrate charging damage The present invention presents a method and apparatus for reducing charging damage to a substrate is described. In particular, a method of operating a plasma processing system is described that leads to the removal of, or significant reduction of, the accumulated ch... | 09/19/2006 |
| 7033952 | Apparatus and method using a remote RF energized plasma for processing semiconductor wafers Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species is generated by creating free radicals, and combining the free radic... | 04/25/2006 |
| 7005032 | Wafer table for local dry etching apparatus To resolve a problem that an etching rate profile is changed by a position of a nozzle relative to a semiconductor wafer and accordingly, at a vicinity of an outer edge of the semiconductor wafer, an accurate machining result is difficult to achieve, gas including a... | 02/28/2006 |
| 6968850 | In-situ cleaning of light source collector optics A method and system for cleaning collector optics in a light source chamber. In producing, for example, extreme ultraviolet light for lithography, debris such as tungsten can accumulate on optical components near a light source in the light source chamber. An... | 11/29/2005 |
| 6955991 | Atmospheric process and system for controlled and rapid removal of polymers from high depth to width aspect ratio holes A hot arc-type plasma generating system is described to etch a polymer on a substrate used in the manufacture of semiconductor devices. The etching process is particularly useful to remove a polymer from high aspect ratio holes, that can include trenches, greater th... | 10/18/2005 |
| 6936546 | Apparatus for shaping thin films in the near-edge regions of in-process semiconductor substrates An apparatus for shaping and encapsulating near edge regions of a semiconductor wafer is described. A housing of the apparatus has a slot for receiving an edge of a wafer affixed on a rotatable chuck. At least one plasma source connected to the housing generates a f... | 08/30/2005 |
| 6921695 | Etching method for forming a square cornered polysilicon wordline electrode A split gate FET wordline electrode structure and method for forming the same including an improved polysilicon etching process including providing a semiconductor wafer process surface comprising first exposed polysilicon portions and adjacent oxide portions; formi... | 07/26/2005 |
| 6875698 | Dry etching method In dry etching process wherein a substrate having a multi-layer film is etched, the etching process is monitored by determining a layer being processed. CHF3 gas is added to the processing gas during a period from the time when the lowermost layer on the ... | 04/05/2005 |
| 6849555 | Wafer processing apparatus and wafer processing method using the same An integrated in situ cluster type wafer processing apparatus which can be used for forming metal wiring layers having a multi-layered structure and a wafer processing method using the same are provided. The wafer processing apparatus includes a transfer chamber whi... | 02/01/2005 |
| 6822311 | DC or AC electric field assisted anneal A method for forming a desired junction profile in a semiconductor device. At least one dopant is introduced into a semiconductor substrate. The at least one dopant is diffused in the semiconductor substrate through annealing the semiconductor substrate and the at l... | 11/23/2004 |
| 6800559 | Method and apparatus for generating H20 to be used in a wet oxidation process to form SiO2 on a silicon surface Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species is generated by creating free radicals, and combining the free radic... | 10/05/2004 |
| 6770540 | Method of fabricating semiconductor device having L-shaped spacer A method of fabricating a semiconductor device having an L-shaped spacer is provided. A buffer dielectric layer, a first dielectric layer, and a second dielectric layer are sequentially formed on the surface of the gate electrode and on the semiconductor substrate. ... | 08/03/2004 |
| 6762136 | Method for rapid thermal processing of substrates A technique is described for a very rapid thermal treatment of a substrate used to make semiconductor devices. The substrate is subjected to a very hot gas stream such as can be produced from an arc-type plasma generator. The substrate is then moved through the hot ... | 07/13/2004 |
| 6689685 | Process for forming a diffusion barrier material nitride film A process is disclosed for manufacturing a film that is smooth and has large nitride grains of a diffusion barrier material. Under the process, a nitride of the diffusion barrier material is deposited by physical vapor deposition in an environment of nitr... | 02/10/2004 |
| 6607987 | Method for improving uniformity in batch processing of semiconductor wafers A novel batch processing system used, for example, in plasma etching and chemical vapor deposition, wherein the pressure in the reactor is cycled through a varying pressure to increase the transfer of the reactant materials to the center of the wafer. One... | 08/19/2003 |
| 6579805 | In situ chemical generator and method Chemical generator and method for generating a chemical species at a point of use such as the chamber of a reactor in which a workpiece such as a semiconductor wafer is to be processed. The species is generated by creating free radicals, and combining the... | 06/17/2003 |
| 6566272 | Method for providing pulsed plasma during a portion of a semiconductor wafer process A method for processing a semiconductor wafer with a plasma using continuous RF power for a first phase of wafer processing and with pulsed RF power for a second phase of wafer processing.... | 05/20/2003 |
| 6509275 | Method of manufacturing thin film and pretreating method thereof In pre-treating a surface of a substrate in a process of forming a narrowed thin film pattern on the surface of the substrate from a solution such as a plating liquid, a mask with an opening corresponding to the thin film pattern to be formed later is for... | 01/21/2003 |
| 6475889 | Method of forming vias in silicon carbide and resulting devices and circuits A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device on a first surface of a silicon ca... | 11/05/2002 |
| 6461972 | Integrated circuit fabrication dual plasma process with separate introduction of different gases into gas flow A dual plasma process generates a microwave neutral plasma remote from a semiconductor wafer and a radio frequency (RF) ionized plasma adjacent to the wafer for simultaneous application to the wafer. A first gas flows through a microwave plasma generation... | 10/08/2002 |
| 6395643 | Gas manifold for uniform gas distribution and photochemistry The invention provides a system for providing a flow of a short-lived, reactive process gas species into an RTP chamber without creating ionic species. An RTP chamber includes a transparent quartz window assembly. The window assembly has a first pane faci... | 05/28/2002 |
| 6348158 | Plasma processing with energy supplied In a plasma processing method, a plasma is generated using a process gas, and an electron beam is injected into the plasma to control an electron energy distribution in the plasma. Then, a semiconductor substrate is processed using the plasma with control... | 02/19/2002 |
| 6329297 | Dilute remote plasma clean A method and apparatus for enhancing the etch characteristics of a plasma formed in a remote plasma generator. A plasma formed in a remote plasma generator (27) is flown through a tube (62) to a plenum (60) where it is diluted to form a plasma mixture bef... | 12/11/2001 |
| 6299788 | Silicon etching process A method for polysilicon etching with HBr, He and He/O2 as reactive gas source is disclosed. A chamber pressure greater than 30 mTorr is held to achieve high selectivity to polysilicon over silicon oxide. A total flow rate of HBr and He greater... | 10/09/2001 |
| 6245192 | Gas distribution apparatus for semiconductor processing A gas distribution system for uniformly or non-uniformly distributing gas across the surface of a semiconductor substrate. The gas distribution system includes a support plate and a showerhead which are secured together to define a gas distribution chambe... | 06/12/2001 |
| 6245686 | Process for forming a semiconductor device and a process for operating an apparatus A process for forming a semiconductor device includes placing a substrate (104) into an apparatus (300), creating a plasma, and processing the substrate (104). The apparatus (300) includes an electromagnetic source (120), a bulk material (302), and a firs... | 06/12/2001 |
| 6153529 | Photo-assisted remote plasma apparatus and method The present invention provides a plasma processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, an... | 11/28/2000 |
| 6056848 | Thin film electrostatic shield for inductive plasma processing A plasma reactor and methods for processing semiconductor substrates are described. An induction coil inductively couples power into the reactor to produce a plasma. A thin electrostatic shield is interposed between the induction coil and plasma to reduce... | 05/02/2000 |
| 6008139 | Method of etching polycide structures A method for etching metal silicide layers 22a, 22b and polysilicon layers 24a, 24b on a substrate 20 with high etching selectivity, and anisotropic etching properties, is described. In the method, the substrate 20 is placed in a plasma zone 55, and proce... | 12/28/1999 |
| 6004631 | Apparatus and method of removing unnecessary matter and coating process using such method An apparatus for removing unnecessary matter formed on an edge portion of a substrate without damaging a middle area of a top face of the substrate is provided. The substrate is supported on a stage which is in contact only with a bottom face of the subst... | 12/21/1999 |
| 5948702 | Selective removal of TixNy A dry etch method for removing TixNy films by using a remote plasma to excite a oxygen+fluorine source gas mixture, generating active species that etch TixNy with minimum attack to other materials. In particular, an isotropic dry etch can be used for the ... | 09/07/1999 |
| 5916455 | Method and apparatus for generating a low pressure plasma A low pressure plasma ignition method and apparatus includes an ignition cylinder which passes through an anode of a vacuum chamber, where the outlet of the ignition cylinder forms a nozzle. A coil is arranged around the cylinder and a plasma-generating g... | 06/29/1999 |
