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| Number | Title | Issue Date |
| 8143169 | Methods for multi-stage molding of integrated circuit package Methods for providing an integrated circuit using a multi-stage molding process to protect wirebonds. In one embodiment, a method includes attaching a die to a leadframe having a lead finger, attaching a wirebond between the die and the leadfinger, applying a first ... | 03/27/2012 |
| 7618896 | Semiconductor die package including multiple dies and a common node structure A semiconductor die package capable of being mounted to a motherboard is disclosed. The semiconductor die package includes a substrate, and a first semiconductor die mounted on the substrate, where the first semiconductor die includes a first vertical device compris... | 11/17/2009 |
| 7582569 | Distributor and distributing method, plasma processing system and method, and process for fabricating LCD A distributor (30) includes a square waveguide (31) to be connected to a microwave oscillator (20) and a square waveguide (41) having a plurality of openings (43) formed in a narrow wall (41B). The square waveguide (31 | 09/01/2009 |
| 7341922 | Dry etching method, fabrication method for semiconductor device, and dry etching apparatus When etching is performed with respect to a silicon-containing material by using a dry etching apparatus having a dual power source, the application of bias power is initiated before oxidization proceeds at a surface of the silicon-containing material. Specifically,... | 03/11/2008 |
| 7329609 | Substrate processing method and substrate processing apparatus In a substrate processing apparatus, a control electrode (131) separates a process space (11C) including a substrate to be processed and a plasma formation space (11B) not including the substrate. The control electrode includes a conductive memb... | 02/12/2008 |
| 7320734 | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceil... | 01/22/2008 |
| 7312157 | Methods and apparatus for cleaning semiconductor devices Methods and apparatus for cleaning a semiconductor device are disclosed. A disclosed method comprises forming a capping layer on top of a substrate including a bottom interconnect layer; depositing and patterning an insulating layer on the capping layer to form a da... | 12/25/2007 |
| 7303982 | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpi... | 12/04/2007 |
| 7291360 | Chemical vapor deposition plasma process using plural ion shower grids A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mu... | 11/06/2007 |
| 7288485 | Device and method for anisotropic plasma etching of a substrate, particularly a silicon element A method and a device suitable for its execution are provided for the anisotropic plasma etching of a substrate, especially a silicon element. The device has a chamber and a plasma source for generating a high-frequency electromagnetic alternating field and a reacti... | 10/30/2007 |
| RE39895 | Semiconductor integrated circuit arrangement fabrication method To realize etching with a high selection ratio and a high accuracy in fabrication of an LSI, the composition of dissociated species of a reaction gas is accurately controlled when dry-etching a thin film on a semiconductor substrate by causing an inert gas excited t... | 10/23/2007 |
| 7244474 | Chemical vapor deposition plasma process using an ion shower grid A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction r... | 07/17/2007 |
| 7223676 | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer A low temperature process for depositing a coating containing any of silicon, nitrogen, hydrogen or oxygen on a workpiece includes placing the workpiece in a reactor chamber facing a processing region of the chamber, introducing a process gas containing any of silic... | 05/29/2007 |
| 7189653 | Etching method and etching apparatus A mask material layer 102 of a desired pattern is formed on a silicon oxide film 101. The exposed parts of the silicon oxide film 101 is etched in accordance with the pattern of the mask material layer 102 by plasma etching by using a mix... | 03/13/2007 |
| 7183214 | High-density plasma (HDP) chemical vapor deposition (CVD) methods and methods of fabricating semiconductor devices employing the same In one embodiment, a semiconductor substrate is placed into a process chamber. A gas mixture including a silicon-containing gas, a fluorine-containing gas, an inert gas, and an oxygen gas is introduced into the chamber at a pressure range of from about 30 mTorr to a... | 02/27/2007 |
| 7183130 | Magnetic random access memory and method of fabricating thereof A device structure and method for forming an interconnect structure in a magnetic random access memory (MRAM) device. In an exemplary embodiment, the method includes defining a magnetic stack layer on a lower metallization level, the magnetic stack layer including a... | 02/27/2007 |
| 7178126 | Method of protecting a semiconductor integrated circuit from plasma damage In the design of an integrated circuit having a semiconductor substrate and metal interconnecting lines, including a core ring with metal power and ground lines that supply power to a core area inside the core ring, one or more metal-oxide-semiconductor capacitor un... | 02/13/2007 |
| 7169255 | Plasma processing apparatus A plasma processing apparatus for providing plasma processing to an object placed inside a processing chamber includes a vacuum chamber, a process gas feeder feeding gas into the vacuum chamber, a wafer electrode disposed within the vacuum chamber for mounting the o... | 01/30/2007 |
| 7163602 | Apparatus for generating planar plasma using concentric coils and ferromagnetic cores A plasma source using a combination of concentric coils and ferromagnetic cores drives a radio frequency magnetic flux with controlled radial magnitude variation through a window into a reduced pressure process chamber, to provide improved plasma generation efficien... | 01/16/2007 |
| 7137354 | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage A plasma immersion ion implantation reactor for ion implanting a species into a surface layer of a workpiece includes an enclosure which has a side wall and a ceiling defining a chamber and a workpiece support pedestal within the chamber having a workpiece support s... | 11/21/2006 |
| 7118992 | Wafer thinning using magnetic mirror plasma A method for manufacturing integrated circuits uses an atmospheric magnetic mirror plasma etching apparatus to thin a semiconductor wafer. In addition the process may, while thinning, both segregate and expose through-die vias for an integrated circuit chip. To segr... | 10/10/2006 |
| 7112536 | Plasma processing system and method A plasma processing system and method wherein a power source produces a magnetic field and an electric field, and a window disposed between the power source and an interior of a plasma chamber couples the magnetic field into the plasma chamber thereby to couple powe... | 09/26/2006 |
| 7109123 | Silicon etching method A Si etching method etches a Si wafer held on a susceptor placed in a processing vessel by a plasma-assisted etching process. A mixed etching gas prepared by mixing fluorosulfur gas, such as SF6 gas, or fluorocarbon gas, O2 gas and fluorosilico... | 09/19/2006 |
| 7094316 | Externally excited torroidal plasma source A plasma reactor for processing a workpiece, including an enclosure defining a vacuum chamber, a workpiece support within the enclosure facing an overlying portion of the enclosure, the enclosure having at least first and second openings therethrough near generally ... | 08/22/2006 |
| 7094706 | Device and method for etching a substrate by using an inductively coupled plasma A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles... | 08/22/2006 |
| 7037813 | Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage A method for implanting ions in a surface layer of a workpiece includes placing the workpiece on a workpiece support in a chamber with the surface layer being in facing relationship with a ceiling of the chamber, thereby defining a processing zone between the workpi... | 05/02/2006 |
| 7033521 | Piezoelectric actuator, ink jet head, and discharge apparatus A piezoelectric actuator includes: a buffer layer that is composed of an oxide or a nitride epitaxially formed on a Si substrate; a bottom electrode formed on the buffer layer, being composed of a transition metal oxide, and having a pseudo-cubic (100) or (111) orie... | 04/25/2006 |
| 6958112 | Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation Methods and systems are provided for depositing silicon oxide in a gap on a substrate. The silicon oxide is formed by flowing a process gas into a process chamber and forming a plasma having an overall ion density of at least 1011 ions/cm3. The... | 10/25/2005 |
| 6939434 | Externally excited torroidal plasma source with magnetic control of ion distribution A plasma reactor is described that includes a vacuum chamber defined by an enclosure including a side wall and a workpiece support pedestal within the chamber defining a processing region overlying said pedestal. The chamber has at least a first pair of ports near o... | 09/06/2005 |
| 6924239 | Method for removal of hydrocarbon contamination on gate oxide prior to non-thermal nitridation using “spike” radical oxidation The present invention is generally directed towards a method for removing hydrocarbon contamination from a substrate prior to a nitridation step, therein providing for a generally uniform nitridation of the substrate. The method comprises placing the substrate in a ... | 08/02/2005 |
| 6902959 | Semiconductor device having junction diode and fabricating method therefor A semiconductor device having a junction diode and a fabricating method therefor prevents deterioration of the gate insulating layer during a plasma etching process required for wire formation. The semiconductor device includes a junction diode (a unidirectional or ... | 06/07/2005 |
| 6713969 | Method and apparatus for determination and control of plasma state A plasma processing system that includes a plasma chamber, an open resonator movably mounted within the plasma chamber, and a detector. The open resonator produces a microwave signal, and the detector detects the microwave signal and measures a mean electron plasma ... | 03/30/2004 |
| 6673722 | Microwave enhanced CVD system under magnetic field An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonanc... | 01/06/2004 |
| 6673199 | Shaping a plasma with a magnetic field to control etch rate uniformity A substrate etching chamber has a substrate support, a gas supply to introduce a process gas into the chamber; an inductor antenna to sustain a plasma of the process gas in a process zone of the chamber, and an exhaust to exhaust the process gas. A magnet... | 01/06/2004 |
| 6649514 | EEPROM device having improved data retention and process for fabricating the device An EEPROM device having improved data retention and process for fabricating the device includes a two-step deposition process for the fabrication of an ILD layer overlying the high voltage elements of an EEPROM memory cell. The ILD layer is fabricated by ... | 11/18/2003 |
| 6573190 | Dry etching device and dry etching method A dry etching apparatus and method which can uniformly and stably generate a high-density plasma over a wide range, and can cope with increase of wafer diameter and making the pattern finer in etch processing of the fine pattern of a semiconductor device.... | 06/03/2003 |
| 6562722 | Method and apparatus for dry etching A method and apparatus for dry etching changes at least one of the effective pumping speed of a vacuum chamber and the gas flow rate to alter the processing of an etching pattern side wall of a sample between first and second conditions. The first and sec... | 05/13/2003 |
| 6563148 | Semiconductor device with dummy patterns The semiconductor device includes a semiconductor substrate and, in an element isolating region in the semiconductor substrate, a first active area A/A dummy pattern and a second A/A dummy pattern having a pitch smaller than that of the first A/A dummy pa... | 05/13/2003 |
| 6506687 | Dry etching device and method of producing semiconductor devices A technique of dry etching the surface of a wafer by using a dry etching apparatus in which the distance between a wafer and a surface facing the wafer is set to the half or less of the diameter of the wafer is disclosed. Even in the case of using, especi... | 01/14/2003 |
| 6403491 | Etch method using a dielectric etch chamber with expanded process window A method for etching a dielectric in a thermally controlled plasma etch chamber with an expanded processing window. The method is adapted to incorporate benefits of a the thermal control and high evacuation capability of the chamber. Etchent gases include... | 06/11/2002 |
