Did You Know...
...that two musicians were responsible for the invention of color print film? Fascinated by photography, Leopold Godowsky and Leopold Mannes worked together to produce an easy-to-use, practical color film. They worked full time as music teachers and gave concerts while experimenting during their off hours in Mannes' kitchen. Their success earned them full-time, well-paying jobs at Kodak and their efforts resulted in Kodachrome film, which was introduced in 1935.
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| Number | Title | Issue Date |
| 8158527 | Semiconductor device fabrication method using multiple resist patterns A resist pattern (5) is formed in a dimension of a limitation of an exposure resolution over a hard mask material film (4) over a work film (3). The material film (4) is processed using the resist pattern (5) as a mask. A hard mask... | 04/17/2012 |
| 8129285 | Substrate processing system A substrate processing method implemented in a substrate processing system that includes an etching apparatus that carries out plasma etching processing on a substrate and a vacuum-type substrate transferring apparatus to which the etching apparatus is connected is ... | 03/06/2012 |
| 8097541 | Method for surface treating semiconductor Native oxide film on a semiconductor silicon wafer(s) is dry etched at a temperature of 50° C. or less. Hydrogen treatment is then carried out a temperature of 100° C. or more to bond the dangling bonds with hydrogen. A jig 9 that has been used is again use... | 01/17/2012 |
| 7977247 | Field effect transistor device including an array of channel elements The present invention relates to a semiconductor structure such as a field effect transistors (FETs) in which the channel region of each of the FETs is composed of an array of more than one electrically isolated channel. In accordance with the present invention, the... | 07/12/2011 |
| 7858530 | Processing method for wafer and processing apparatus therefor A processing method for a wafer includes: preparing a wafer which has a device region having plural devices formed on a surface of the wafer; and a peripheral reinforcing portion which is integrally formed around the device region and has a projection projecting out... | 12/28/2010 |
| 7820554 | Method for unloading thermally treated non-planar silicon wafers with a conveying blade A process for producing a silicon wafer by conveying a (100) face silicon wafer into and from a treating furnace of a single wafer heat-treating apparatus or a vapor phase growth apparatus with a conveying blade having a mounting face capable of mounting only a spec... | 10/26/2010 |
| 7566665 | Semiconductor device manufacturing method and manufacturing line thereof The present invention provides a semiconductor device manufacturing line for applying a series of processes on a semiconductor substrate, and forming an integrated circuit on the semiconductor substrate by employing a semiconductor wafer having a diameter of 6 inche... | 07/28/2009 |
| 7413963 | Method of edge bevel rinse A method of edge bevel rinse. First, a wafer having a coating material layer disposed thereon is provided. A light beam is optically projected on the wafer to form a reference pattern. The reference pattern defines a central region, and a bevel region surrounding th... | 08/19/2008 |
| 7387968 | Batch photoresist dry strip and ash system and process Photoresist stripping is provided that employs batch processing to maximize throughput and an upstream plasma activation source using vapor or gas processing to efficiently create reactive species and minimize chemical consumption. An upstream plasma activation sour... | 06/17/2008 |
| 7365019 | Atmospheric process and system for controlled and rapid removal of polymers from high aspect ratio holes A system that generates an intense hot gas stream is described to etch a polymer on a substrate used in the manufacture of semiconductor and MEMS devices with no surface damage. The etching process is particularly useful to remove a polymer from relatively high aspe... | 04/29/2008 |
| 7357115 | Wafer clamping apparatus and method for operating the same A wafer clamping apparatus is provided to secure a wafer within a chamber during wafer processing. The wafer clamping apparatus creates a pressure differential between a top surface and a bottom surface of the wafer. The pressure differential serves to pull the wafe... | 04/15/2008 |
| 7359177 | Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output A plasma reactor has a dual frequency plasma RF bias power supply furnishing RF bias power comprising first and second frequency components, f(1), f(2), respectively, and an RF power path having an input end coupled to the plasma RF bias power supply a... | 04/15/2008 |
| 7337745 | Electrode, susceptor, plasma processing apparatus and method of making the electrode and the susceptor A susceptor 24 includes a heater 38 disposed in a planar state, upper and lower ceramic-metal composites 40A and 40B disposed so as to sandwich the heater 38 from above and from below, and a ceramic electrostatic chuck 28 fo... | 03/04/2008 |
| 7332262 | Photolithography scheme using a silicon containing resist A method for forming a patterned amorphous carbon layer in a semiconductor stack, including forming an amorphous carbon layer on a substrate and forming a silicon containing photoresist layer on top of the amorphous carbon layer. Thereafter, the method includes deve... | 02/19/2008 |
| 7332056 | Thin film removing device and thin film removing method A thin film removing device and a thin film removing method are capable of removing straight parts of a thin film formed on a square substrate from corners of the substrate, and of suppressing the formation of mists. An approach stage 20 having flat stage pla... | 02/19/2008 |
| 7330346 | Etching apparatus, method for measuring self-bias voltage, and method for monitoring etching apparatus The invention provides a means for estimating a self-bias voltage under arbitrary etching conditions via a simple procedure. The present invention provides a method for measuring self-bias voltage of an etching apparatus comprising an electrostatic chuck mechanism | 02/12/2008 |
| 7326358 | Plasma processing method and apparatus, and storage medium A plasma processing method performs a plasma processing on a substrate mounted on a mounting table installed in an airtight processing chamber, the mounting table having a smaller size than the substrate. The substrate having a surface, on which a resist mark is for... | 02/05/2008 |
| 7312156 | Method and apparatus for supporting a semiconductor wafer during processing A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas ... | 12/25/2007 |
| 7286890 | Transfer apparatus for target object A processing system includes a transfer chamber, a plurality of chambers connected to the transfer chamber, a transfer apparatus disposed in the transfer chamber, and a control section configured to control the transfer apparatus. The transfer apparatus includes a b... | 10/23/2007 |
| 7276097 | Load-lock system, exposure processing system, and device manufacturing method A load-lock system includes a load-lock chamber arranged between a storage port which stores a substrate and a process chamber which processes the substrate in a process space maintained at a pressure lower than that in the storage port, and a dehumidifying unit whi... | 10/02/2007 |
| 7274429 | Integrated lithographic fabrication cluster An integrated lithographic fabrication cluster system, as presented herein, comprises an exposure apparatus to expose a pattern onto a substrate with an associated exposure controller to control the exposure apparatus and a track apparatus interconnecting a pluralit... | 09/25/2007 |
| 7267129 | Device and process for liquid treatment of wafer-shaped articles A device for liquid treatment of a defined area of a wafer-shaped article, especially of a wafer, near the edge, in which the liquid is applied to a first surface, flows essentially radially to the outside to the peripheral-side edge of the wafer-shaped article and ... | 09/11/2007 |
| 7258811 | Wafer stage including electrostatic chuck and method for dechucking wafer using the wafer stage A wafer stage including an electrostatic chuck and a method for dechucking a wafer using the wafer stage are provided, wherein, the wafer stage includes an electrostatic chuck support, an electrostatic chuck, a lifting means, and a grounding means including a device... | 08/21/2007 |
| 7256132 | Substrate centering apparatus and method A semiconductor substrate centering mechanism includes a plurality of substrate support pins, each pin having a top surface. The top surfaces of the pins define a plane in which the substrate is supported. Each pin has a tab mounted eccentrically at the top surface ... | 08/14/2007 |
| 7247252 | Method of avoiding plasma arcing during RIE etching A method for avoiding plasma arcing during a reactive ion etching (RIE) process including providing a semiconductor wafer having a process surface for depositing a dielectric insulating layer; depositing at least a portion of a dielectric insulating layer to form a ... | 07/24/2007 |
| 7247218 | Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power A plasma reactor process measurement instrument includes an input phase processor receiving wafer bias voltage, current and power and computing an input impedance, an input current and an input voltage to the transmission line; a transmission line processor for comp... | 07/24/2007 |
| 7225820 | High-pressure processing chamber for a semiconductor wafer A processing chamber having an improved sealing means is disclosed. The processing chamber comprises a lower element, an upper element, and a seal energizer. The seal energizer is configured to maintain the upper element against the lower element to maintain a proce... | 06/05/2007 |
| 7223702 | Method of and apparatus for performing sequential processes requiring different amounts of time in the manufacturing of semiconductor devices A method of manufacturing a semiconductor device includes first and second processes, the latter requiring more processing time. An apparatus for performing the semiconductor manufacturing process includes a first reactor, and a plurality of second reactors for each... | 05/29/2007 |
| 7223162 | Holder for wafers The present invention provides a holder (20) for wafers (14) which makes it possible to more easily manipulate the wafer (14) and makes it more suitable than prior art devices for to liquid handling, wafer handling and on-wafer manipulation of s... | 05/29/2007 |
| 7221553 | Substrate support having heat transfer system A support for a substrate processing chamber has upper and lower walls that are joined by a peripheral sidewall to define a reservoir. A fluid inlet supplies a heat transfer fluid to the reservoir. In one version, a plurality of protrusions extends into the reservoi... | 05/22/2007 |
| 7220937 | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination A gas distribution ceiling electrode for use as a capacitive source power applicator and gas distribution showerhead in a plasma reactor includes a metal base and a process-compatible protective layer on the interior surface of he electrode having a dopant impurity ... | 05/22/2007 |
| 7218503 | Method of determining the correct average bias compensation voltage during a plasma process A method for removing a substrate that is attached to a bipolar electrostatic chuck (ESC) by application of a bipolar ESC voltage is provided which includes discontinuing the bipolar ESC voltage after processing a current substrate, and determining a monopolar compo... | 05/15/2007 |
| 7211518 | Waferless automatic cleaning after barrier removal A method for forming features in dielectric layers and opening barrier layers for a plurality of wafers and cleaning an etch chamber after processing and removing each wafer of the plurality of wafers is provided. A wafer of the plurality of wafers is placed into th... | 05/01/2007 |
| 7208423 | Semiconductor device fabrication method and semiconductor device A resist pattern (5) is formed in a dimension of a limitation of an exposure resolution over a hard mask material film (4) over a work film (3). The material film (4) is processed using the resist pattern (5) as a mask. A hard mask... | 04/24/2007 |
| 7205250 | Plasma processing method and apparatus A Plasma processing method and apparatus exhibit excellent characteristics of reducing the amount of electric charge on a plasma-processed processing-object substrate and of preventing plasma damage and dielectric breakdown. Before the processing-object substrate is... | 04/17/2007 |
| 7196283 | Plasma reactor overhead source power electrode with low arcing tendency, cylindrical gas outlets and shaped surface An overhead gas distribution electrode forming at least a portion of the ceiling of a plasma reactor has a bottom surface facing a processing zone of the reactor. The electrode includes a gas supply manifold for receiving process gas at a supply pressure at a top po... | 03/27/2007 |
| 7189647 | Sequential station tool for wet processing of semiconductor wafers Methods and apparatus are provided for processing semiconductor wafers sequentially. Sequential processes employ multi-station processing modules, where particular encompassing wafer processes are divided into sub-processes, each optimized for increasing wafer to wa... | 03/13/2007 |
| 7186943 | MERIE plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for su... | 03/06/2007 |
| 7183208 | Methods for treating pluralities of discrete semiconductor substrates The invention includes a method for treating a plurality of discrete semiconductor substrates. The discrete semiconductor substrates are placed within a reactor chamber. While the substrates are within the chamber, they are simultaneously exposed to one or more of H... | 02/27/2007 |
| 7179397 | Plasma processing methods and apparatus To move an article in and out of plasma during plasma processing, the article is rotated by a first drive around a first axis, and the first drive is itself rotated by a second drive. As a result, the article enters the plasma at different angles for different posit... | 02/20/2007 |
