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| Number | Title | Issue Date |
| 8129284 | Heat treatment method and heat treatment apparatus for heating substrate by light irradiation A semiconductor wafer in which a carbon thin film is formed on a surface of a silicon substrate implanted with impurities is irradiated with flash light emitted from flash lamps. Absorbing the flash light causes the temperature of the carbon thin film to increase. T... | 03/06/2012 |
| 8026181 | Manufacturing method for semiconductor chips By performing plasma etching on the second surface of a semiconductor wafer on the first surface of which an insulating film is placed in dividing regions and on the second surface of which a mask for defining the dividing regions are placed, the second surface bein... | 09/27/2011 |
| 8026182 | Heat treatment jig and heat treatment method for silicon wafer In this heat treatment jig and method for silicon wafers, a silicon wafer is heat-treated while being mounted on support projections provided on three support arms, having an intervening spacing, protruding from a support frame towards the center. At that time, all ... | 09/27/2011 |
| 8008209 | Thermal gradient control of high aspect ratio etching and deposition processes A technique is described whereby temperature gradients are created within a semiconductor wafer. Temperature sensitive etching and/or deposition processes are then employed. These temperature sensitive processes proceed at different rates in regions with different t... | 08/30/2011 |
| 7977246 | Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere A thermal anneal process for preventing formation of certain BPSG surface defects following an etch or silicon clean step using a fluorine and hydrogen chemistry. The thermal anneal process is carried out while protecting the wafer from moisture, by heating the wafe... | 07/12/2011 |
| 7923374 | Method and apparatus for production of metal film or the like In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a diff... | 04/12/2011 |
| 7776751 | Process for producing silicon compound A process for producing a silicon compound can minimize the number of steps and can form a desired compound in a low-temperature environment. The process comprises: allowing a radical of a halogen gas to act on a member 11 to be etched, which is disposed with... | 08/17/2010 |
| 7682983 | Manufacturing method of electronic device with resist ashing A manufacturing method of an electronic device, includes the steps of: implanting P (phosphorous) ions into a substrate semiconductor region made of Si or SiGe by using a resist as a mask; ashing the resist while it is heated in a vacuum environment; and taking out ... | 03/23/2010 |
| 7659209 | Barrier metal film production method A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodati... | 02/09/2010 |
| 7598179 | Techniques for removal of photolithographic films Techniques for removal of photolithographic films used in the manufacture of semiconductor devices are provided. A substrate support member of a first processing chamber includes at least three retractable pins capable of elevating a wafer from a surface of the subs... | 10/06/2009 |
| 7541290 | Methods of forming mask patterns on semiconductor wafers that compensate for nonuniform center-to-edge etch rates during photolithographic processing Methods of forming integrated circuit devices include steps to selectively widen portions of a mask pattern extending adjacent an outer edge of a semiconductor wafer. These steps to selectively widen portions of the mask pattern are performed so that more uniform ce... | 06/02/2009 |
| 7416405 | Vertical type of thermal processing apparatus and method of using the same A vertical type of thermal processing apparatus of the present invention includes a thermal processing furnace having a furnace opening at a lower portion thereof. A boat holding objects to be processed in a tier-like manner in a vertical direction is adapted to be ... | 08/26/2008 |
| 7413991 | Damascene process at semiconductor substrate level A damascene structure and process at semiconductor substrate level. A pre-metal dielectric layer is provided on a semiconductor substrate with an opening exposing a contact region on the substrate. A buffer metal layer is provided on the exposed contact region, and ... | 08/19/2008 |
| 7396480 | Method for front end of line fabrication A method for removing native oxides from a substrate surface is provided. In at least one embodiment, the method includes supporting the substrate surface in a vacuum chamber and generating reactive species from a gas mixture within the chamber. The substrate surfac... | 07/08/2008 |
| 7390751 | Dry etching method and apparatus for performing dry etching A dry etching method includes loading a wafer on a lower electrode having at least two cooling paths. Cooling fluids having different temperatures are supplied to each of the cooling paths of the lower electrode so that the multiple cooling paths are at different te... | 06/24/2008 |
| 7374696 | Method and apparatus for removing a halogen-containing residue The invention provides for a method and integrated system for removing a halogen-containing residue from a substrate comprising etching the substrate, heating the substrate and exposing the heated substrate to a plasma that removes the halogen-containing residue. | 05/20/2008 |
| 7371332 | Uniform etch system Etching a layer over a substrate is provided. The substrate is placed in a plasma processing chamber. A first gas is provided to an inner zone within the plasma processing chamber. A second gas is provided to the outer zone within the plasma processing chamber, wher... | 05/13/2008 |
| RE40264 | Multi-temperature processing The present invention provides a technique, including a method and apparatus, for etching a substrate in the manufacture of a device. The apparatus includes a chamber and a substrate holder disposed in the chamber. The substrate holder has a selected thermal mass to... | 04/29/2008 |
| 7355308 | Mover combination with two circulation flows A circulation system (330) for a mover (328) includes a fluid source (360) that directs a first fluid (356) into a first inlet (364A) of the mover (328) and a second fluid (358) into a second inlet (366A) of th... | 04/08/2008 |
| 7348257 | Process for manufacturing wafers of semiconductor material by layer transfer A process manufactures a wafer using semiconductor processing techniques. A bonding layer is formed on a top surface of a first wafer; a deep trench is dug in a substrate of semiconductor material belonging to a second wafer. A top layer of semiconductor material is... | 03/25/2008 |
| 7341945 | Method of fabricating semiconductor device A method of fabricating a semiconductor device prevents agglomeration of a seed metal layer in a recess. A recess is formed in a dielectric layer formed on or over a wafer. A seed metal layer (e.g., Cu or Cu alloy) is then formed on a bottom face and an inner side f... | 03/11/2008 |
| 7329610 | Method of high selectivity SAC etching A method for SAC etching is provided involving a) etching a Si wafer having a nitride present thereon with a first etching gas containing a first perfluorocarbon and carbon monoxide, and b) etching the resultant Si wafer having an initially etched nitride photoresis... | 02/12/2008 |
| 7329361 | Method and apparatus for fabricating or altering microstructures using local chemical alterations A method and apparatus for fabricating or altering a microstructure use means for heating to facilitate a local chemical reaction that forms or alters the submicrostructure. ... | 02/12/2008 |
| 7313931 | Method and device for heat treatment After carrying an LCD substrate in a reaction container of a heat treatment unit, blowing a previously heated helium gas from a gas supply part, which opposes to the surface of the LCD substrate, over the entire surface of the LCD substrate. The temperature of the L... | 01/01/2008 |
| 7312156 | Method and apparatus for supporting a semiconductor wafer during processing A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas ... | 12/25/2007 |
| 7311109 | Method for cleaning a processing chamber and method for manufacturing a semiconductor device A method for cleaning a processing chamber and manufacturing a semiconductor device by removing impurities from a substrate in the processing chamber with a plasma of a first gas including hydrogen gas. After the substrate is removed from the processing chamber, the... | 12/25/2007 |
| 7309641 | Method for rounding bottom corners of trench and shallow trench isolation process A method for rounding the bottom corners of a trench is described. In the method, an etching process is performed using a fluorocarbon compound with at least two carbon atoms, He and O2 as an etching gas to round the bottom corners of the trench. ... | 12/18/2007 |
| 7303998 | Plasma processing method A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sa... | 12/04/2007 |
| 7297286 | Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants A method for manufacturing an article having polymeric residue that is to be removed during the manufacture of the article is disclosed. The article is introduced into a controlled environment of a processing tool having one or more processing chambers. Free radical... | 11/20/2007 |
| 7297894 | Method for multi-step temperature control of a substrate A method of changing the temperature of a substrate during processing of the substrate includes providing the substrate on a substrate holder, the substrate holder including a temperature controlled substrate support for supporting the substrate, a temperature contr... | 11/20/2007 |
| 7294579 | Method for forming contact opening The present invention relates to a method for forming a contact opening. First, a substrate having at least a dielectric layer formed thereon is provided. Then, a photoresist layer having a first opening is formed on the dielectric layer. A plasma etching operation ... | 11/13/2007 |
| 7291565 | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid A method and system is described for treating a substrate with a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for treating the substrate surface. The process chemistry comprises fl... | 11/06/2007 |
| 7288483 | Method and system for patterning a dielectric film A method and system for patterning a dielectric film such as a low dielectric constant (low-k) material. A dry non-plasma etching process can be implemented to transfer a pattern from a photo-lithographic layer to a hard mask layer, while minimizing the evolution of... | 10/30/2007 |
| 7282158 | Method of processing a workpiece This invention relates to a method of processing a workpiece in a chamber. Initially a surface of the workpiece is treated by a process which includes supplying a reactive gas to the chamber through a first gas supply and the surface is then further treated using a ... | 10/16/2007 |
| 7276447 | Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material A plasma etch process for etching a porous carbon-doped silicon oxide dielectric layer using a photoresist mask is carried out first in an etch reactor by performing a fluoro-carbon based etch process on the workpiece to etch exposed portions of the dielectric layer... | 10/02/2007 |
| 7270724 | Scanning plasma reactor A scanning plasma reactor for exciting reactant gases at a substrate surface including a beam forming module, a gas injection module, a reaction chamber with a window and a vacuum chuck, a gas exhaust module. Radiation from the beam forming module and the reactant g... | 09/18/2007 |
| 7267724 | Thin-film disposition apparatus A dividing plate for a thin-film deposition apparatus divides the interior of the vacuum reaction chamber into a plasma discharge space and a film deposition process space, by fixing or connecting a plurality of laminated plates together by securely bonding them ove... | 09/11/2007 |
| 7267726 | Method and apparatus for removing polymer residue from semiconductor wafer edge and back side A method for cleaning a semiconductor device has the steps of securing a wafer (16) with a modified chuck (11) and applying a cleaning solution (18) to the backside (20) of the wafer (16). The cleaning solution (18) is formu... | 09/11/2007 |
| 7262138 | Organic BARC with adjustable etch rate Systems and method for adjusting an etch rate of an organic bottom antireflective coating (BARC) layer on a wafer. The BARC layer can be exposed to an energy source at varied intensities to determine a relationship between bake temperature and solubility of the BARC... | 08/28/2007 |
| 7259104 | Sample surface processing method A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of inst... | 08/21/2007 |
