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| Number | Title | Issue Date |
| 8183161 | Method and system for dry etching a hafnium containing material A method and system for etching a hafnium containing material using a boron tri-chloride (BCl3) based process chemistry is described. A substrate having a hafnium containing layer, such as a layer of hafnium dioxide (HfO2) is subjected a dry et... | 05/22/2012 |
| 8163652 | Plasma processing method and plasma processing device A plasma processing method using plasma includes steps of applying current to a coil and introducing gas into a processing chamber, applying a bias power that does not generate plasma, applying a source power to generate plasma so that a plasma density distribution ... | 04/24/2012 |
| 8158526 | Endpoint detection for photomask etching Apparatus and method for endpoint detection are provided for photomask etching. The apparatus provides a plasma etch chamber with a substrate support member. The substrate support member has at least two optical components disposed therein for use in endpoint detect... | 04/17/2012 |
| 8138096 | Plasma etching method In a plasma etching method, a substrate including an underlying film, an insulating film and a resist mask is plasma etched to thereby form a number of holes in the insulating film including a dense region and a sparse region by using a parallel plate plasma etching... | 03/20/2012 |
| 8133817 | Shallow trench isolation etch process Methods for fabricating one or more shallow trench isolation (STI) structures are provided herein. In some embodiments, a method for fabricating one or more shallow trench isolation (STI) structures may include providing a substrate having a patterned mask layer dis... | 03/13/2012 |
| 8129283 | Plasma processing method and plasma processing apparatus The invention provides a plasma processing apparatus and a dry etching method for etching a multilayered film structure having steps with high accuracy. The plasma processing apparatus comprises a vacuum reactor 107, a lower electrode 113 placed within... | 03/06/2012 |
| 8124539 | Plasma processing apparatus, focus ring, and susceptor A plasma processing apparatus having a focus ring, enables the efficiency of cooling of the focus ring to be greatly improved, while preventing an increase in cost thereof. The plasma processing apparatus is comprised of a susceptor which has an electrostatic chuck ... | 02/28/2012 |
| 8080479 | Plasma process uniformity across a wafer by controlling a variable frequency coupled to a harmonic resonator A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes cou... | 12/20/2011 |
| 8076247 | Plasma process uniformity across a wafer by controlling RF phase between opposing electrodes A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency... | 12/13/2011 |
| 8067313 | Semiconductor device, method of manufacturing the same, and electronic apparatus Disclosed is a method of manufacturing a semiconductor device including forming a transistor on a first surface of a device substrate, forming a hole in a second surface opposite to the first surface of the device substrate, and supplying hydrogen to a gate insulati... | 11/29/2011 |
| 8058179 | Atomic layer removal process with higher etch amount Higher overall etch rate and throughput for atomic layer removal (ALR) is achieved. The reaction is a self-limiting process, thus limiting the total amount of material that may be etched per cycle. By pumping down the process station between reacting operations, the... | 11/15/2011 |
| 8043971 | Plasma processing apparatus, ring member and plasma processing method [Problem to be Solved] In a plasma processing apparatus for executing a process using plasma, promoting the sharing of an apparatus in executing a plurality of different processes and plasma states amongst apparatuses in executing same processes in a plurality of ap... | 10/25/2011 |
| 8017526 | Gate profile control through effective frequency of dual HF/VHF sources in a plasma etch process A method of processing a wafer in a plasma, in which target values of two different plasma process parameters are simultaneously realized under predetermined process conditions by setting respective power levels of VHF and HF power simultaneously coupled to the wafe... | 09/13/2011 |
| 7968469 | Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ... | 06/28/2011 |
| 7955986 | Capacitively coupled plasma reactor with magnetic plasma control A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a... | 06/07/2011 |
| 7943523 | Plasma etching method and computer readable storage medium A plasma etching method for plasma-etching an anti-reflective coating formed on a target object includes the step of placing the target object into a processing chamber having a first electrode and a second electrode provided while facing each other, the target obje... | 05/17/2011 |
| 7910488 | Alternative method for advanced CMOS logic gate etch applications Methods for etching, such as for fabricating a CMOS logic gate are provided herein. In some embodiments, a method of etching includes (a) providing a substrate having a first stack and a second stack disposed thereupon, the first stack comprising a high-k dielectric... | 03/22/2011 |
| 7888268 | Method of forming a gate layer with multiple ecthing steps A method of manufacturing a semiconductor device has forming a first silicon film over the first insulating film, forming a second silicon film over the first silicon film, a first etching the second silicon film in a depth, which the first silicon film is not expos... | 02/15/2011 |
| 7884025 | Plasma process uniformity across a wafer by apportioning ground return path impedances among plural VHF sources In a plasma reactor chamber a ceiling electrode and a workpiece support electrode, respective RF power sources of respective VHF frequencies f1 and f2 are coupled to either respective ones of the electrodes or to a common one of the electrodes, where f... | 02/08/2011 |
| 7879732 | Thin film etching method and semiconductor device fabrication using same A method for etching a thin film and fabricating a semiconductor device includes etching the thin film on a substrate, while monitoring the removal of an endpoint detection layer remotely located from the substrate, such that precise control of the thin film etching... | 02/01/2011 |
| 7879731 | Improving plasma process uniformity across a wafer by apportioning power among plural VHF sources A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 a... | 02/01/2011 |
| 7875555 | Method for plasma processing over wide pressure range A method for treating a substrate with plasma over a wide pressure range is described. The method comprises exposing the substrate to a low pressure plasma in a process chamber. Further, the method comprises exposing the substrate to a high pressure plasma in the pr... | 01/25/2011 |
| 7851368 | Methods and apparatus for igniting a low pressure plasma In a plasma processing system having a plasma processing chamber, at least one powered electrode and an ignition electrode, a method for igniting a plasma is disclosed. The method includes introducing a substrate into the plasma processing chamber. The method also i... | 12/14/2010 |
| 7838432 | Etch process with controlled critical dimension shrink Methods to etch an opening in a substrate layer with reduced critical dimensions are described. A multi-layered mask including a lithographically patterned photoresist and an unpatterned organic antireflective coating (BARC) is formed over a substrate layer to be et... | 11/23/2010 |
| 7829469 | Method and system for uniformity control in ballistic electron beam enhanced plasma processing system A method and system for adjusting and controlling the plasma uniformity in a plasma processing system is described. The plasma processing system includes an electron source electrode to which direct current (DC) power is coupled in order to generate a ballistic elec... | 11/09/2010 |
| 7829468 | Method and apparatus to detect fault conditions of plasma processing reactor A method of fault detection for use in a plasma processing chamber is provided. The method comprises monitoring plasma parameters within a plasma chamber with a single planar ion flux (PIF) probe, analyzing the resulting information, measuring the plasma parameters ... | 11/09/2010 |
| 7829470 | Method for manufacturing semiconductor device A contact hole, after hole etching, is subjected to light etching using a process gas containing a fluorocarbon-based gas and oxygen, with the oxygen being enriched, under condition without applying bias. Then, reaction products (5) having C—F bond and adhe... | 11/09/2010 |
| 7816272 | Process of cleaning a semiconductor manufacturing system and method of manufacturing a semiconductor device A process of cleaning a semiconductor manufacturing system, and a method of manufacturing a semiconductor device. The cleaning process includes, for example, positioning a ceramic cover on the electrostatic chuck in tight contact with the chuck, and feeding a fluori... | 10/19/2010 |
| 7807581 | Plasma processing apparatus and plasma processing method The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a ... | 10/05/2010 |
| 7799694 | Methods of forming semiconductor constructions The invention includes methods of forming isolation regions for semiconductor constructions. A hard mask can be formed and patterned over a semiconductor substrate, with the patterned hard mask exposing a region of the substrate. Such exposed region can be etched to... | 09/21/2010 |
| 7795153 | Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters The invention involves a method of processing a workpiece on workpiece support pedestal in a plasma reactor chamber in accordance with user-selected values of plural (i.e., N) plasma parameters by controlling plural chamber parameters. The plasma parameters may be s... | 09/14/2010 |
| 7763547 | Technique for enhancing process flexibility during the formation of vias and trenches in low-k interlayer dielectrics In an etch process for forming via openings and trench openings in a low-k dielectric layer, the material removal of an underlying etch stop layer is decoupled from the etching through the low-k dielectric in that the reduction in thickness is substantially achieved... | 07/27/2010 |
| 7754615 | Method and apparatus for detecting endpoint in a dry etching system by monitoring a superimposed DC current A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied b... | 07/13/2010 |
| 7749914 | Plasma etching method The present invention is a plasma etching method including: an arranging step of arranging a pair of electrodes oppositely in a chamber and making one of the electrodes support a substrate to be processed in such a manner that the substrate is arranged between the e... | 07/06/2010 |
| 7737042 | Pulsed-plasma system for etching semiconductor structures A pulsed plasma system for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. The ON state of a duty cycle is... | 06/15/2010 |
| 7723239 | Method for fabricating capacitor in semiconductor device A method for fabricating capacitor in a semiconductor device includes forming an sacrificial layer and over a substrate, forming a mask pattern over the sacrificial layer, etching the sacrificial layer in two steps with differentiated top and bottom power levels usi... | 05/25/2010 |
| 7718538 | Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates A pulsed plasma system with pulsed sample bias for etching semiconductor structures is described. In one embodiment, a portion of a sample is removed by applying a pulsed plasma process, wherein the pulsed plasma process comprises a plurality of duty cycles. A negat... | 05/18/2010 |
| 7704889 | Method and system for advanced process control in an etch system by gas flow control on the basis of CD measurements By controlling the flow rate of one or more gaseous components of an etch ambient during the formation of metal lines and vias on the basis of feedback measurement data from critical dimensions, process variations may be reduced, thereby enhancing performance and re... | 04/27/2010 |
| 7682982 | Plasma processing apparatus and control method thereof There is provided a plasma processing apparatus includes a lower electrode in a processing chamber on which a object to be processed is mounted; an upper electrode confronting the lower electrode; a first and a second high-frequency power supply for applying high-fr... | 03/23/2010 |
| 7670959 | Memory device etch methods A method of manufacturing a memory device forms a first dielectric layer over a substrate, forms a charge storage layer over the first dielectric layer, forms a second dielectric layer over the charge storage layer, and forms a control gate layer over the second die... | 03/02/2010 |
