Class 438/710 - By creating electric field (e.g., plasma, glow discharge, etc.)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes involving the application of an electric field
No. of patents: 1586
Last issue date: 01/24/2012

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Number	Title	Issue Date
8101525	Method for fabricating a semiconductor device having a lanthanum-family-based oxide layer Methods for fabricating a semiconductor device having a lanthanum-family-based oxide layer are described. A gate stack having a lanthanum-family-based oxide layer is provided above a substrate. At least a portion of the lanthanum-family-based oxide layer is modified...	01/24/2012
8058178	Photoresist strip method for low-k dielectrics The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer...	11/15/2011
8026180	Methods of modifying oxide spacers Methods for reducing line roughness of spacers and other features utilizing a non-plasma and non-wet etch fluoride processing technology are provided. Embodiments of the methods can be used for spacer or line reduction and/or smoothing the surfaces along the edges o...	09/27/2011
8003541	Methods of forming variable resistance memory cells, and methods of etching germanium, antimony, and tellurium-comprising materials A method of etching a material that includes comprising germanium, antimony, and tellurium encompasses exposing said material to a plasma-enhanced etching chemistry comprising Cl2 and CH2F2. A method of forming a variable resistance ...	08/23/2011
7989352	Technique for reducing plasma-induced etch damage during the formation of vias in interlayer dielectrics By forming a conductive material within an etch mask for an anisotropic etch process for patterning openings, such as vias, in a dielectric layer of a metallization structure, the probability for arcing events may be reduced, since excess charge may be laterally dis...	08/02/2011
7977245	Methods for etching a dielectric barrier layer with high selectivity Methods for etching a dielectric barrier layer with high selectivity to a dielectric bulk insulating layer are provided. In one embodiment, the method includes providing a substrate having a portion of a dielectric barrier layer exposed through a dielectric bulk ins...	07/12/2011
7964511	Plasma ashing method A plasma ashing method is used for removing a patterned resist film in a processing chamber after etching a portion of a low-k film from an object to be processed in the processing chamber by using the patterned resist film as a mask. The method includes a first ste...	06/21/2011
7928013	Display panel and rework method of gate insulating layer of thin film transistor A rework method of a gate insulating layer of a thin film transistor includes the following steps. First, a substrate including a silicon nitride layer, which serves as a gate insulating layer, disposed thereon. Subsequently, a first film removal process is performe...	04/19/2011
7902078	Processing method and plasma etching method A processing method includes a silicon oxide etching process of performing a plasma etching on a target layer mainly made up of silicon, a silicon oxide layer formed on the target layer and a target object having a previously patterned resist layer formed on the sil...	03/08/2011
7892980	Apparatus and a method for controlling the depth of etching during alternating plasma etching of semiconductor substrates The present invention provides apparatus for controlling the operation of plasma etching a semiconductor substrate by an alternating etching method, the apparatus comprising: a process chamber (1) in which said substrate (	02/22/2011
7871935	Non-plasma capping layer for interconnect applications The present invention provides an interconnect structure which has a high leakage resistance and substantially no metallic residues and no physical damage present at an interface between the interconnect dielectric and an overlying dielectric capping layer. The inte...	01/18/2011
7867911	Method for forming pattern using hard mask A method for forming a pattern in a semiconductor device includes forming an etch target layer, forming a hard mask over the etch target layer, the hard mask including a multiple-layer stack structure comprising a bottom layer, a transformed layer, and an upper laye...	01/11/2011
7842617	Etching method and etching apparatus The present invention is an etching method for performing an etching process in the presence of a plasma on an object to be processed in which a layer to be etched made of a tungsten-containing material is formed on a base layer made of a silicon-containing material...	11/30/2010
7825033	Methods of forming variable resistance memory cells, and methods of etching germanium, antimony, and tellurium-comprising materials A method of etching a material that includes comprising germanium, antimony, and tellurium encompasses exposing said material to a plasma-enhanced etching chemistry comprising Cl2 and CH2F2. A method of forming a variable resistance ...	11/02/2010
7811939	Plasma etching method A plasma etching apparatus is arranged to perform main etching for etching a poly-crystalline silicon film by use of Cl2/SF6/N2 plasma obtained by exciting Cl2 gas, SF6 gas, and N2 gas, and over etchi...	10/12/2010
7763546	Methods for reducing surface charges during the manufacture of microelectromechanical systems devices Provided herein are methods for preventing the formation and accumulation of surface-associated charges, and deleterious effects associated therewith, during the manufacture of a MEMS device. In some embodiments, methods provided herein comprise etching a sacrificia...	07/27/2010
7723238	Method for preventing striation at a sidewall of an opening of a resist during an etching process In a method for manufacturing a semiconductor device, a first high frequency power of a first frequency is applied to a processing gas to generate a plasma of the processing gas, a second high frequency power of a second frequency smaller than the first frequency is...	05/25/2010
7704887	Remote plasma pre-clean with low hydrogen pressure A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen press...	04/27/2010
7704888	Methods for removing photoresist from semiconductor structures having high-k dielectric material layers Methods for removing photoresist from semiconductor structures are provided. In an exemplary embodiment, a method for removing photoresist from a semiconductor structure having a high-k dielectric material layer overlying a substrate comprises depositing a photoresi...	04/27/2010
7682979	Phase change alloy etch A method of forming devices is provided. A phase change layer is provided. The phase change layer is etched by providing an etch gas comprising a bromine containing compound and forming a plasma from the etch gas. The phase change layer is of a material that may be ...	03/23/2010
7682980	Method to improve profile control and N/P loading in dual doped gate applications A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unpr...	03/23/2010
7670957	Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided. The method includes sequentially forming etch target layers, a hard mask layer and an anti-reflective coating layer, selectively etching the anti-reflective coating layer and the hard mask layer using a ga...	03/02/2010
7666793	Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having amorphous metal oxide film and semiconductor device A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorpho...	02/23/2010
7632756	Semiconductor processing using energized hydrogen gas and in combination with wet cleaning A method of fabricating a semiconductor device. The method comprises subjecting a substrate having formed thereon photoresist layer to a plasma hydrogen, the substrate further having formed thereon a sacrificial layer; contacting the photoresist layer with a photore...	12/15/2009
7622393	Method and apparatus for manufacturing a semiconductor device, control program thereof and computer-readable storage medium storing the control program A semiconductor device manufacturing method includes a plasma etching process for selectively plasma etching a silicon nitride film against a silicon oxide film formed under the silicon nitride film in a substrate to be processed. The plasma etching process uses an ...	11/24/2009
7585777	Photoresist strip method for low-k dielectrics The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer...	09/08/2009
7563722	Method of making a textured surface A method of micro- and nanotexturing of various solid surfaces in plasma where carbon nanotubes are used as an etch mask. The method allows obtaining textures with feature sizes that can be controlled with the nanotube dimensions and the density of coating the treat...	07/21/2009
7550390	Method and apparatus for dielectric etching during integrated circuit fabrication A method for multi-step dielectric etching includes discharge steps between each of the etching steps in order to help release accumulated charge on the wafer produced by the previous etching step. The discharge steps stabilize the plasma discharge in each transitio...	06/23/2009
7547635	Process for etching dielectric films with improved resist and/or etch profile characteristics A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma ...	06/16/2009
7538038	Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection insulating film, a MSQ film, and a silicon oxide film composing an ILD are RI...	05/26/2009
7521369	Selective removal of rare earth based high-k materials in a semiconductor device A method is disclosed for the selective removal of rare earth based high-k materials such as rare earth scandate high-k materials (e.g. DyScO3) over silicon or silicon dioxide. As an example Dy and Sc comprising high-k materials are used as a high-k mater...	04/21/2009
7517803	Silicon parts having reduced metallic impurity concentration for plasma reaction chambers Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal con...	04/14/2009
7510976	Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity A plasma etch process for successively different layers, including an anti-reflection coating (ARC), an amorphous carbon layer (ACL) and a dielectric layer, with successively different etch chemistries is performed in a single plasma reactor chamber. A first transit...	03/31/2009
7494934	Method of etching carbon-containing layer and method of fabricating semiconductor device A method of etching a carbon-containing layer on a semiconductor substrate using a Si-containing gas and a related method of fabricating a semiconductor device in which a plurality of contact holes having excellent sidewall profiles are formed by etching an interlay...	02/24/2009
7485580	Method for removing organic electroluminescent residues from a substrate A process for removing organic electroluminescent residues from a substrate is described herein. The process includes the steps of providing a process gas comprising a fluorine-containing gas, optionally an oxygen-containing gas, and optionally an additive gas; acti...	02/03/2009
7470628	Etching methods Processes, etchants, and apparatus useful for etching an insulating oxide layer of a substrate without damaging underlying nitride features or field oxide regions. The processes exhibit good selectivity to both nitrides and field oxides. Integrated circuits produced...	12/30/2008
7470627	Wafer area pressure control for plasma confinement A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an e...	12/30/2008
7462565	Method of manufacturing semiconductor device A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper ex...	12/09/2008
7449415	Gas for plasma reaction and process for producing thereof A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of th...	11/11/2008
7442274	Plasma etching method and apparatus therefor A fluorine-containing compound gas, e.g., SF6 gas, is converted into a plasma and a silicon portion of an object to be processed is etched by the plasma. At the same time, using a light source having a peak intensity of light in a wavelength range of ligh...	10/28/2008

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Class 438/710 - By creating electric field (e.g., plasma, glow discharge, etc.)