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| Number | Title | Issue Date |
| 7670957 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided. The method includes sequentially forming etch target layers, a hard mask layer and an anti-reflective coating layer, selectively etching the anti-reflective coating layer and the hard mask layer using a ga... | 03/02/2010 |
| 7666793 | Method of manufacturing amorphous metal oxide film and methods of manufacturing capacitance element having amorphous metal oxide film and semiconductor device A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorpho... | 02/23/2010 |
| 7632756 | Semiconductor processing using energized hydrogen gas and in combination with wet cleaning A method of fabricating a semiconductor device. The method comprises subjecting a substrate having formed thereon photoresist layer to a plasma hydrogen, the substrate further having formed thereon a sacrificial layer; contacting the photoresist layer with a photore... | 12/15/2009 |
| 7622393 | Method and apparatus for manufacturing a semiconductor device, control program thereof and computer-readable storage medium storing the control program A semiconductor device manufacturing method includes a plasma etching process for selectively plasma etching a silicon nitride film against a silicon oxide film formed under the silicon nitride film in a substrate to be processed. The plasma etching process uses an ... | 11/24/2009 |
| 7585777 | Photoresist strip method for low-k dielectrics The present invention pertains to methods for removing unwanted material from a semiconductor wafer during wafer manufacturing. More specifically, the invention pertains to stripping photo-resist material and removing etch-related residues from a semiconductor wafer... | 09/08/2009 |
| 7563722 | Method of making a textured surface A method of micro- and nanotexturing of various solid surfaces in plasma where carbon nanotubes are used as an etch mask. The method allows obtaining textures with feature sizes that can be controlled with the nanotube dimensions and the density of coating the treat... | 07/21/2009 |
| 7550390 | Method and apparatus for dielectric etching during integrated circuit fabrication A method for multi-step dielectric etching includes discharge steps between each of the etching steps in order to help release accumulated charge on the wafer produced by the previous etching step. The discharge steps stabilize the plasma discharge in each transitio... | 06/23/2009 |
| 7547635 | Process for etching dielectric films with improved resist and/or etch profile characteristics A process of etching openings in a dielectric layer includes supporting a semiconductor substrate in a plasma etch reactor, the substrate having a dielectric layer and a patterned photoresist and/or hardmask layer above the dielectric layer; supplying to the plasma ... | 06/16/2009 |
| 7538038 | Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor device Disclosed is a method of removing resist preventing increase of dielectric constant of low permittivity insulating films and preventing remains of resist. Using a resist mask, a protection insulating film, a MSQ film, and a silicon oxide film composing an ILD are RI... | 05/26/2009 |
| 7521369 | Selective removal of rare earth based high-k materials in a semiconductor device A method is disclosed for the selective removal of rare earth based high-k materials such as rare earth scandate high-k materials (e.g. DyScO3) over silicon or silicon dioxide. As an example Dy and Sc comprising high-k materials are used as a high-k mater... | 04/21/2009 |
| 7517803 | Silicon parts having reduced metallic impurity concentration for plasma reaction chambers Silicon parts of a semiconductor processing apparatus containing low levels of metal impurities that are highly mobile in silicon are provided. The silicon parts include, for example, rings, electrodes and electrode assemblies. The silicon parts can reduce metal con... | 04/14/2009 |
| 7510976 | Dielectric plasma etch process with in-situ amorphous carbon mask with improved critical dimension and etch selectivity A plasma etch process for successively different layers, including an anti-reflection coating (ARC), an amorphous carbon layer (ACL) and a dielectric layer, with successively different etch chemistries is performed in a single plasma reactor chamber. A first transit... | 03/31/2009 |
| 7494934 | Method of etching carbon-containing layer and method of fabricating semiconductor device A method of etching a carbon-containing layer on a semiconductor substrate using a Si-containing gas and a related method of fabricating a semiconductor device in which a plurality of contact holes having excellent sidewall profiles are formed by etching an interlay... | 02/24/2009 |
| 7485580 | Method for removing organic electroluminescent residues from a substrate A process for removing organic electroluminescent residues from a substrate is described herein. The process includes the steps of providing a process gas comprising a fluorine-containing gas, optionally an oxygen-containing gas, and optionally an additive gas; acti... | 02/03/2009 |
| 7470627 | Wafer area pressure control for plasma confinement A plasma processing chamber is provided which provides improved wafer area pressure control. The plasma processing chamber is a vacuum chamber with a device connected for generating and sustaining a plasma. Part of this device would be an etchant gas source and an e... | 12/30/2008 |
| 7470628 | Etching methods Processes, etchants, and apparatus useful for etching an insulating oxide layer of a substrate without damaging underlying nitride features or field oxide regions. The processes exhibit good selectivity to both nitrides and field oxides. Integrated circuits produced... | 12/30/2008 |
| 7462565 | Method of manufacturing semiconductor device A substrate having a copper wiring is prepared. An insulating film is formed on the copper wiring. The insulating film is etched with a gas containing fluorine to form an opening reaching the copper wiring. A plasma treatment is carried out on a surface of copper ex... | 12/09/2008 |
| 7449415 | Gas for plasma reaction and process for producing thereof A high-purity gas for plasma reaction having an octafluorocyclopentene purity of at least 99.9% by volume based on the total volume of the gas for plasma reaction, wherein the total content of nitrogen gas and oxygen gas, contained as trace gaseous ingredients of th... | 11/11/2008 |
| 7442274 | Plasma etching method and apparatus therefor A fluorine-containing compound gas, e.g., SF6 gas, is converted into a plasma and a silicon portion of an object to be processed is etched by the plasma. At the same time, using a light source having a peak intensity of light in a wavelength range of ligh... | 10/28/2008 |
| 7443001 | Preparation of microelectromechanical system device using an anti-stiction material and selective plasma sputtering A method for preparing a microelectromechanical system (MEMS) device for subsequent processing is disclosed. The method includes establishing an anti-stiction material on exposed surfaces of the MEMS device. The exposed surfaces include at least an interior surface ... | 10/28/2008 |
| 7442649 | Etch with photoresist mask A method for etching a dielectric layer over a substrate is provided. A photoresist mask is formed over the dielectric layer. The substrate is placed in a plasma processing chamber. An etchant gas comprising NF3 is provided into the plasma chamber. A plas... | 10/28/2008 |
| 7439188 | Reactor with heated and textured electrodes and surfaces A reactor for processing semiconductor wafers with electrodes and other surfaces that can be one of heated, textured and/or pre-coated in order to facilitate adherence of materials deposited thereon, and eliminate the disadvantages resulting from the spaulding, flak... | 10/21/2008 |
| 7435616 | CMOS image sensor and method of fabricating the same Provided is a method of fabricating a CMOS image sensor. According to an embodiment method, an insulating layer can be formed on a semiconductor substrate, and a metal pad can be formed on the insulating layer. A first overcoat layer can be formed on the insulating ... | 10/14/2008 |
| 7431857 | Plasma generation and control using a dual frequency RF source A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the proce... | 10/07/2008 |
| 7431859 | Plasma etch process using polymerizing etch gases with different etch and polymer-deposition rates in different radial gas injection zones with time modulation A plasma etch process includes injecting process gases with different compositions of chemical species through different radial gas injection zones of an overhead electrode to establish a desired distribution of chemical species among the plural gas injection zones.... | 10/07/2008 |
| 7432210 | Process to open carbon based hardmask A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H2, N2, and CO. ... | 10/07/2008 |
| 7429532 | Semiconductor substrate process using an optically writable carbon-containing mask A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordan... | 09/30/2008 |
| 7425512 | Method for etching a substrate and a device formed using the method The present invention provides a method for etching a substrate, a method for forming an integrated circuit, an integrated circuit formed using the method, and an integrated circuit. The method for etching a substrate includes, among other steps, providing a substra... | 09/16/2008 |
| 7425506 | Methods of providing an adhesion layer for adhesion of barrier and/or seed layers to dielectric films A process for enhancing the adhesion of directly plateable materials to an underlying dielectric is demonstrated, so as to withstand damascene processing. Using diffusion barriers onto which copper can be deposited facilitates conventional electrolytic processing. A... | 09/16/2008 |
| 7416973 | Method of increasing the etch selectivity in a contact structure of semiconductor devices By providing an additional silicon dioxide based etch stop layer, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. In another aspect, the etch selectiv... | 08/26/2008 |
| 7416676 | Plasma etching method and apparatus, control program for performing the etching method, and storage medium storing the control program A plasma etching method for etching an etching target layer of a silicon layer through a mask of a silicon oxide film includes the following sequential steps of forming an opening in the silicon oxide film, wherein an opening dimension of a portion between a top and... | 08/26/2008 |
| 7413993 | Process for removing a residue from a metal structure on a semiconductor substrate The invention is concerned with a process for removing residue comprising a polymeric resist and metal oxide from a metal structure on a semiconductor substrate, the process comprising the steps of: (a) heating up the substrate with the metal structure in the presen... | 08/19/2008 |
| 7410593 | Plasma etching methods using nitrogen memory species for sustaining glow discharge Methods are described which comprise: providing a plasma etching apparatus having an etching chamber; disposing a substrate to be etched in the chamber; introducing N2 gas and one or more process gases into the chamber; and etching the substrate, wherein ... | 08/12/2008 |
| 7405161 | Method for fabricating a semiconductor device Method for fabricating a semiconductor device in which a by-product of etching is deposited on a photoresist film for using as a mask. The method for fabricating a semiconductor device includes the steps of depositing a polysilicon, and a bottom anti-refection coati... | 07/29/2008 |
| 7405160 | Method of making semiconductor device A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing ... | 07/29/2008 |
| 7402528 | Fabricating method of active device array substrate A method of fabricating an active device array substrate is provided. A substrate having scan lines, data lines and active devices formed thereon is provided. Each of the active devices is electrically connected to the corresponding scan line and data line. An organ... | 07/22/2008 |
| 7402524 | Post high voltage gate oxide pattern high-vacuum outgas surface treatment The present invention provides a method for fabricating a dual gate semiconductor device. In one aspect, the method comprises forming a nitridated, high voltage gate dielectric layer over a semiconductor substrate, patterning a photoresist over the nitridated, high ... | 07/22/2008 |
| 7402523 | Etching method A method for etching an insulation film through a patterned mask, includes the steps of etching the insulation film until just before an underlayer is about to be exposed by applying a plasma, and modifying a quality of a remaining film of the insulation film by app... | 07/22/2008 |
| 7402522 | Hard mask structure for deep trenched super-junction device A hard mask structure is disclosed. The hard mask structure is used for manufacturing a deep trench of a super-junction device having a substrate and an epitaxial layer formed on the substrate. The hard mask structure comprises an ion barrier layer formed on the epi... | 07/22/2008 |
| 7399703 | Process for patterning nanocarbon material, semiconductor device, and method for manufacturing semiconductor device A process for patterning a nanocarbon material includes a step of forming a nanocarbon layer on a substrate; a step of forming a first metal layer on the nanocarbon layer to pattern the first metal layer, the first metal layer containing at least one selected from t... | 07/15/2008 |