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| Number | Title | Issue Date |
| 8163590 | Image sensor and method for manufacturing the same Disclosed are an image sensor and a method of manufacturing the same. The image sensor includes a substrate including a pixel area and a logic circuit area; an interlayer dielectric layer on the substrate and having a trench in the pixel area; and an insulating laye... | 04/24/2012 |
| 8138013 | Method and apparatus for forming a photodiode A method for forming a photodiode is provided. The method comprises: providing a region of semiconductor material having a first surface and a second surface; coupling a first conductive layer to the first surface of the semiconductor material; and coupling a second... | 03/20/2012 |
| 8129212 | Surface cleaning and texturing process for crystalline solar cells Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface w... | 03/06/2012 |
| 8119438 | Method of manufacturing solar cell A method of manufacturing a solar cell having a texture on a surface of a silicon substrate includes first forming a porous layer on the surface of the silicon substrate by dipping the silicon substrate into a mixed aqueous solution of oxidizing reagent containing m... | 02/21/2012 |
| 8101454 | Method of forming pixel cell having a grated interface A pixel cell having a photosensor within a silicon substrate; and an oxide layer provided over the photosensor, the oxide layer having a grated interface with said silicon substrate, and a method of fabricating the pixel cell having a grated interface. ... | 01/24/2012 |
| 8053270 | Method for producing silicon substrate for solar cells A method for producing a silicon substrate for solar cells is provided. The method includes performing a saw damage removal (SDR) and surface macro-texturing on a silicon substrate with acids solution, so that a surface of the silicon substrate becomes an irregular ... | 11/08/2011 |
| 7910393 | Methods for forming a dual-doped emitter on a silicon substrate with a sub-critical shear thinning nanoparticle fluid A Group IV based nanoparticle fluid is disclosed. The nanoparticle fluid includes a set of nanoparticles—comprising a set of Group IV atoms, wherein the set of nanoparticles is present in an amount of between about 1 wt % and about 20 wt % of the nanoparticle flui... | 03/22/2011 |
| 7875488 | Method of fabricating image sensor having inner lens A method of fabricating an image sensor according to example embodiments may include forming a photodiode in a photoelectric conversion region of a substrate and forming an etch stop layer on the substrate. The etch stop layer may be patterned to form an inner lens ... | 01/25/2011 |
| 7803653 | Method of manufacturing image sensor A method of manufacturing an image sensor includes forming a device isolation region in an active pixel sensor area of a semiconductor substrate and alignment keys in a scribe lane area of the semiconductor substrate, such that the depth of the alignment keys is equ... | 09/28/2010 |
| 7736939 | Method for forming microlenses of different curvatures and fabricating process of solid-state image sensor A method for forming microlenses of different curvatures is described, wherein a substrate having at least a first and a second areas different in height is provided. A transparent photosensitive layer having a planar surface is formed on the substrate and then patt... | 06/15/2010 |
| 7723151 | CMOS image sensor and method for fabricating the same A CMOS image sensor and fabricating method thereof enhances a light-receiving capability of an image sensor by preventing poor light-refraction characteristics at the peripheral part of a microlens. The CMOS image sensor includes at least one microlens formed by ani... | 05/25/2010 |
| 7651884 | Method of fabricating a CMOS image sensor with micro lenses formed in a wiring layer A fabrication method of a CMOS image sensor provides forms micro lenses over a substrate by etching a plurality of holes in a wiring layer over a pixel area. An oxide layer is deposited to form a surface with a semi-circular cross section over the holes. The oxide l... | 01/26/2010 |
| 7579209 | Image sensor and fabricating method thereof An image sensor includes the steps of forming a sublayer including a photodiode, a transistor and a metal line on a substrate, forming a pattern layer on the sublayer to be overlapped with the photodiode and to having a curved surface, and forming a combined color f... | 08/25/2009 |
| 7459334 | Method of manufacturing quartz crystal vibrating piece A method of manufacturing a quartz crystal vibrating piece is provided. Etching masks of different sizes are each arranged on respective front and rear surfaces of a quartz crystal wafer such that the etching mask on one of the surfaces (e.g., the rear surface) is l... | 12/02/2008 |
| 7439091 | Light-emitting diode and method for manufacturing the same A light-emitting diode (LED) and a method for manufacturing the same are described. The method for manufacturing the LED comprises the following steps. An illuminant epitaxial structure is provided, in which the illuminant epitaxial structure has a first surface and... | 10/21/2008 |
| 7435615 | Method for fabricating CMOS image sensor A method for fabricating a CMOS image sensor improves the characteristics of device by preventing a pad from being contaminated without damaging a micro-lens. The method includes steps of forming a device protection layer on a semiconductor substrate including at le... | 10/14/2008 |
| 7413923 | Method of manufacturing CMOS image sensor Provided is a manufacturing method of a CMOS image sensor. The method includes forming an interlayer insulating layer, a color filter layer, and a planarizing layer. A first photoresist is applied on the planarizing layer, and patterning of the first photoresist is ... | 08/19/2008 |
| 7393709 | Microlens manufacturing method The present invention provides a method for manufacturing a microlens in a semiconductor substrate having a first surface and a second surface, comprising the steps of preparing the semiconductor substrate, forming a first resist layer approximately cylindrical in f... | 07/01/2008 |
| 7390689 | Systems and methods for light absorption and field emission using microstructured silicon Methods and systems for absorbing infrared light, and for emitting current are described. A sample, such as a sample containing mainly silicon, is microstructured by at least one laser pulse to produce cone-like structures on the exposed surface. Such microstructuri... | 06/24/2008 |
| 7388270 | Method of fabricating CMOS image sensor A method of fabricating a CMOS image sensor is provided, in which a trapezoidal microlens pattern profile is formed to facilitate reflowing the microlens pattern and by which a curvature of the microlens may be enhanced to raise its light-condensing efficiency. The ... | 06/17/2008 |
| 7384809 | Method of forming three-dimensional features on light emitting diodes for improved light extraction A method is disclosed for obtaining a high-resolution lenticular pattern on the surface of a light emitting diode. The method comprises imprinting a patterned sacrificial layer of etchable material that is positioned on a semiconductor surface that is in turn adjace... | 06/10/2008 |
| 7371603 | Method of fabricating light emitting diode package The invention relates to an LED package and proposes a method of fabricating an LED package including steps of providing a package substrate having a mounting area of an LED and a metal pattern to be connected with the LED, and plasma-treating the package substrate ... | 05/13/2008 |
| 7358111 | Imageable bottom anti-reflective coating for high resolution lithography A semiconductor wafer may be coated with an imageable anti-reflective coating. As a result, the coating may be removed using the same techniques used to remove overlying photoresists. This may overcome the difficulty of etching anti-reflective coatings using standar... | 04/15/2008 |
| 7348192 | Method for monitoring film thickness, a system for monitoring film thickness, a method for manufacturing a semiconductor device, and a program product for controlling film thickness monitoring system A method monitors a thickness of a subject film deposited on an underlying structure, the underlying structure contains at least one thin film formed on a substrate. The method includes determining thickness data of the underlying structure and storing the thickness... | 03/25/2008 |
| 7282132 | Zinc oxide film treatment method and method of manufacturing photovoltaic device utilizing the same A film of zinc oxide electrochemically deposited from an aqueous solution is subjected to heat treatment at a temperature equal to or higher than 150° C. and equal to or lower than 400° C. in a nitrogen or inert gas atmosphere that contains oxygen, thereby obtaini... | 10/16/2007 |
| 7256386 | Fabrication of low leakage-current backside illuminated photodiodes Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As... | 08/14/2007 |
| 7227066 | Polycrystalline optoelectronic devices based on templating technique Methods for passivating crystalline grains in an active layer for an optoelectronic device and optoelectronic devices having active layers with passivated crystalline grains are disclosed. Crystalline grains of an active layer material and/or window layer material a... | 06/05/2007 |
| 7217883 | Manufacturing a solar cell with backside contacts A solar cell involving a silicon wafer having a basic doping, a light-receiving front side and a backside, which is provided with an interdigital semiconductor pattern, which interdigital semiconductor pattern has a first pattern of at least one first diffusion zone... | 05/15/2007 |
| 7214116 | Light-emitting diode and method for its production A light-emitting diode with no fluctuations in optical properties and good sealing properties, and a simple production method for producing this light-emitting diode. The light-emitting diode has a base comprising a cup part on which the light-emitting diode is plac... | 05/08/2007 |
| 7195993 | Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocati... | 03/27/2007 |
| 7166489 | Complementary metal oxide semiconductor image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same is disclosed, to enhance the image-sensing efficiency by forming a concave lens area for improving the light-condensing efficiency in a planarization layer formed before a micro-lens array, in which the CMOS ... | 01/23/2007 |
| 7128975 | Multicrystalline silicon substrate and process for roughening surface thereof A surface of a multicrystalline silicon substrate is etched with an alkaline aqueous solution in a condition so that a surface area-to-planar surface area ratio R is smaller than 1.1. A multiplicity of fine textures are formed over the irregularities by dry etching.... | 10/31/2006 |
| 7126683 | Direct method for the correction of pressure induced scrambling of polarized fluorescence intensities The present invention provides a simple and direct method for the simultaneous correction of steady-state polarized fluorescence intensities, depolarized (or scrambled) by the effects of applied hydrostatic pressure without having to first determine the scrambling f... | 10/24/2006 |
| 7101726 | Solid-state imaging device and method of manufacturing solid-state imaging device background of the invention A solid state imaging device having a back-illuminated type structure in which a lens is formed on the back side of a silicon layer with a light-receiving sensor portion being formed thereon. Insulating layers are buried into the silicon layer around an image pickup... | 09/05/2006 |
| 7101727 | Passivation planarization A pixel cell is formed by locating a first passivation layer over the final layer of metal lines. Subsequently, the uneven, non-uniform passivation layer is subjected to a planarization process such as chemical mechanical polishing, mechanical abrasion, or etching. ... | 09/05/2006 |
| 7037745 | Method of making electrical connections to hermetically sealed MEMS devices In the manufacture of a MEMS device having a semiconductor-on-insulator substrate with a first portion closed by a lid to provide a hermetically sealed region and an second portion external to said hermetically sealed region, a method of providing electrical connect... | 05/02/2006 |
| 7026662 | Semiconductor device having a photon absorption layer to prevent plasma damage A MOSFET device structure and a method of manufacturing the same, in which a photon absorption layer is formed over a gate structure and a substrate in order to avoid plasma induced damage to the gate oxide during high density plasma deposition of a interlayer diele... | 04/11/2006 |
| 7026542 | Cover glass for a solar battery, a method for producing the cover glass and a solar battery module using the cover glass A transparent substrate for a cover for a solar battery and a method for producing the same are presented. Hemispherical concave portions are formed in a surface of light entering side of a cover glass almost over the entire surface wherein the ratio d/D of the dept... | 04/11/2006 |
| 7022577 | Method of forming ultra shallow junctions The present invention relates to a method of fabricating a semiconductor device. In specific embodiments, the method comprises providing a semiconductor substrate, and ion implanting dopant impurities over a time period into the semiconductor device by varying an io... | 04/04/2006 |
| 6963024 | Solar cell module and its installing module A solar cell module 60 has a plurality of solar cells 14 having a plurality of parallel grooves 8 on the individual light-receiving surfaces thereof, each of the grooves having an electrode 5 for extracting output on the inner side face (... | 11/08/2005 |
