Did You Know...
...that the Band-Aid Bandage was invented by a Johnson & Johnson employee whose wife had cut herself? Earl Dickson's wife was rather accident prone, so he set out to develop a bandage that she could apply without help. He placed a small piece of gauze in the center of a small piece of surgical tape, and what we know today as the Band Aid bandage was born!
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| Number | Title | Issue Date |
| 7799693 | Method for manufacturing a semiconductor device Method for manufacturing a semiconductor device including a semiconductor substrate, an element formed on the substrate, and an insulating film formed on the element, includes: (a) forming a first conductive layer (b) forming a first insulating film on the upper por... | 09/21/2010 |
| 7670956 | Beam-induced etching A method and apparatus for local beam processing using a beam activated gas to etch material are described. Compounds are disclosed that are suitable for beam-induced etching. The invention is particularly suitable for electron beam induced etching of chromium mater... | 03/02/2010 |
| 7642193 | Method of treating a mask layer prior to performing an etching process A method of pre-treating a mask layer prior to etching an underlying thin film is described. A thin film, such as a dielectric film, is etched using plasma that is enhanced with a ballistic electron beam. In order to reduce the loss of pattern definition, such as li... | 01/05/2010 |
| 7553772 | Process and apparatus for simultaneous light and radical surface treatment of integrated circuit structure Process and apparatus provide reactive radicals generated from a remote plasma source which contact a portion of a substrate surface simultaneous with a contact of the same substrate surface with a light source which locally activates the portion of the substrate su... | 06/30/2009 |
| 7432209 | Plasma dielectric etch process including in-situ backside polymer removal for low-dielectric constant material A plasma etch process with in-situ backside polymer removal begins with a workpiece having a porous or non-porous carbon-doped silicon oxide dielectric layer and a photoresist mask on a surface of the workpiece. The workpiece is clamped onto an electrostatic chuck i... | 10/07/2008 |
| 7429536 | Methods for forming arrays of small, closely spaced features Methods of forming arrays of small, densely spaced holes or pillars for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. Conventional ... | 09/30/2008 |
| 7427519 | Method of detecting end point of plasma etching process A method of detecting an end point of a plasma etching process for etching a first layer on a second layer is described, the first layer producing a first etching product and the second layer a second etching product. Time-dependent intensity [Ij=1 to m(t... | 09/23/2008 |
| 7416990 | Method for patterning low dielectric layer of semiconductor device A method for patterning a low dielectric insulating layer of a semiconductor device improves adhesion between a photoresist and the low dielectric (Low-K) insulating layer by removing at least one hydroxyl group from a surface of the Low-K insulating layer with a be... | 08/26/2008 |
| 7413960 | Method of forming floating gate electrode in flash memory device A method of forming a floating gate electrode in a flash memory device. The method includes forming an isolation film in an inactive region so that a step with a predetermined thickness can be generated between an active region and the inactive region, which are def... | 08/19/2008 |
| 7405160 | Method of making semiconductor device A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing ... | 07/29/2008 |
| 7396769 | Method for stripping photoresist from etched wafer A method of forming a feature in a low-k (k | 07/08/2008 |
| 7396725 | Method of manufacturing semiconductor device A method of manufacturing a semiconductor device includes forming an insulating layer, a first conductive layer, a dielectric layer and a capping conductive layer over a semiconductor substrate in which a cell region is defined. The capping conductive layer and the ... | 07/08/2008 |
| 7368390 | Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition process A carbon hard mask layer is applied to a substrate to be patterned by means of a plasma-enhanced deposition process in such a manner that it has a hardness comparable to that of diamond in at least one layer thickness section. During the production of this diamond-l... | 05/06/2008 |
| 7367865 | Methods for making wafers with low-defect surfaces, wafers obtained thereby and electronic components made from the wafers The electronic semiconductor component has a crystalline wafer substrate with an active surface and a semiconductor layer coating the active surface. So that the semiconductor layer has a few surface defects the crystalline wafer substrate is a sapphire or silicon c... | 05/06/2008 |
| 7361607 | Method for multi-layer resist plasma etch A method for etching a multi-layer resist defined over a substrate in a plasma etch chamber is provided. The method initiates with introducing the substrate having a pattern defined on a first layer of the multi-layer resist into the etch chamber. SO2 gas... | 04/22/2008 |
| 7361606 | Method of forming a metal line and method of manufacturing display substrate having the same A method of forming a metal line is provided. A first metal layer and a second metal layer protecting the first metal layer are formed on a base substrate. The first metal layer includes aluminum or aluminum alloy. A photoresist pattern having a linear shape is form... | 04/22/2008 |
| 7351449 | Chemical vapor deposition methods for making powders and coatings, and coatings made using these methods Flame produced vapors for combustion chemical vapor deposition are redirected from the direction of the flame by differential atmospheric pressure, such as positive pressure provided by a blower or negative pressure provided by a vacuum. This allows, for example, lo... | 04/01/2008 |
| 7344975 | Method to reduce charge buildup during high aspect ratio contact etch A method of high aspect ratio contact etching a substantially vertical contact hole in an oxide layer using a hard photoresist mask is described. The oxide layer is deposited on an underlying substrate. A plasma etching gas is formed from a carbon source gas. Dopant... | 03/18/2008 |
| 7341955 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided. The method includes: forming an insulation layer over a substrate; forming a hard mask layer over the insulation layer; forming a photoresist pattern over the hard mask layer; forming a polymer over the ph... | 03/11/2008 |
| 7323400 | Plasma processing, deposition and ALD methods A plasma processing method includes providing a substrate in a processing chamber, the substrate having a surface, and generating a plasma in the processing chamber. The plasma provides at least two regions that exhibit different plasma densities. The method include... | 01/29/2008 |
| 7323418 | Etch-back process for capping a polymer memory device The present invention leverages an etch-back process to provide an electrode cap for a polymer memory element. This allows the polymer memory element to be formed within a via embedded in layers formed on a substrate. By utilizing the etch-back process, the present ... | 01/29/2008 |
| 7319074 | Method of defining polysilicon patterns The present invention provides a method of defining polysilicon patterns. The method forms a polysilicon layer on a substrate, and a patterned mask on the polysilicon layer. Then, a first etching process is performed to remove a portion of the polysilicon layer not ... | 01/15/2008 |
| 7293569 | Alkylsilanes as solvents for low vapor pressure precursors Compositions and methods for cleaning deposition systems utilizing alkylsilanes are described herein. In an embodiment, a method of cleaning a semiconductor fabrication system comprises flushing the system with a solvent comprising at least one alkylsilane. In anoth... | 11/13/2007 |
| 7276457 | Selective heating using flash anneal A copper film is treated by applying light at short wavelengths, e.g., at less than 0.6 μm, to heat the copper film and generate a large temperature gradient from the surface of the copper to the interface between the copper and underlying silicon. As a result, gra... | 10/02/2007 |
| 7273815 | Etch features with reduced line edge roughness A method for forming a feature in a layer with reduced line edge roughening is provided. A photoresist layer is formed over the layer. The photoresist layer is patterned to form photoresist features with photoresist sidewalls. A sidewall layer with a thickness less ... | 09/25/2007 |
| 7256129 | Method for fabricating semiconductor device A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming a hard mask layer on the inter-layer insulation layer; etching the hard mask layer using a contact mask; and etching the... | 08/14/2007 |
| 7244672 | Selective etching of organosilicate films over silicon oxide stop etch layers A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to sel... | 07/17/2007 |
| 7217652 | Method of forming highly conductive semiconductor structures via plasma etch A process for making semiconductor structures uses a decoupled plasma source to produce a highly selective plasma etchant to form a structure with a thin adhesive layer and overlaying conductive layer. The preferred plasma is formed from chlorine and oxygen feed gas... | 05/15/2007 |
| 7217659 | Process for producing materials for electronic device A process for producing an electronic device material of a high quality MOS-type semiconductor having an insulating layer and a semiconducting layer. The process includes a step of CVD-treating a substrate to be processed having single-crystal silicon as a main comp... | 05/15/2007 |
| 7217663 | Via hole and trench structures and fabrication methods thereof and dual damascene structures and fabrication methods thereof Via hole and trench structures and fabrication methods are disclosed. The structure comprises a conductive layer in a dielectric layer, and a via hole in the dielectric layer for exposing a portion of a surface of the conductive layer. A conductive liner covers the ... | 05/15/2007 |
| 7217665 | Method of plasma etching high-K dielectric materials with high selectivity to underlying layers A method of plasma etching a layer of dielectric material having a dielectric constant that is greater than four (4). The method includes exposing the dielectric material layer to a plasma comprising a hydrocarbon gas and a halogen containing gas. ... | 05/15/2007 |
| 7214612 | Dual damascene structure and fabrication thereof A dual damascene structure is described, including a substrate, a dielectric layer, a hard mask layer, a contact and a conductive line. The dielectric layer is located on the substrate, the hard mask layer is on the dielectric layer, the contact is located in the di... | 05/08/2007 |
| 7208326 | Edge protection process for semiconductor device fabrication An edge protection process for semiconductor device fabrication includes forming a protective layer on the circumferential edge region of a semiconductor substrate. The semiconductor substrate is placed in a plasma atmosphere and trench structures, such as deep tren... | 04/24/2007 |
| 7199058 | Method of manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device Precision in an etching process is to be improved. A detecting unit 404 detects a variation of plasma emission intensity at a plurality of wavelengths (an emission band having an intensity peak in the proximity of 358 nm and an emission band having an intensi... | 04/03/2007 |
| 7194199 | Stacked annealing system A process chamber includes an opening, two or more stacked cold plates adjacent the opening, two or more stacked hot plates adjacent the cold plates, and a rotatable wafer transport capable of moving a wafer between the cold plates and between the hot plates for pro... | 03/20/2007 |
| 7183217 | Dry-etching method A dry-etching method using an apparatus where a wafer is placed on either of a pair of opposed electrodes provided in an etching chamber, and high-frequency power is supplied to both the opposed electrodes to effect a plasma etching. The plasma etching uses a gas co... | 02/27/2007 |
| 7183120 | Etch-stop material for improved manufacture of magnetic devices A method for fabricating a magnetoresistive device having at least one active region, which may be formed into a magnetic memory bit, sensor element and/or other device, is provided. In forming the magnetoresistive device, a magnetoresistive stack, such as a giant m... | 02/27/2007 |
| 7183201 | Selective etching of organosilicate films over silicon oxide stop etch layers A method of selectively etching organosilicate layers in integrated circuit fabrication processes is disclosed. The organosilicate layers are selectively etched using a hydrogen-containing fluorocarbon gas. The hydrogen-containing fluorocarbon gas may be used to sel... | 02/27/2007 |
| 7177010 | Lithographic apparatus and device manufacturing method A lithographic apparatus comprises an illumination system for providing a projection beam of radiation, a support structure for supporting patterning device, the patterning device serving to transmit or reflect radiation in the projection beam and impart the project... | 02/13/2007 |
| 7176123 | Method for manufacturing metal line of semiconductor device The present invention discloses methods for manufacturing a metal line of a semiconductor device that can prevent undesirable etching of an edge of an interlayer insulating film. In accordance with the method, a lower metal line exposed by a via contact hole is cove... | 02/13/2007 |
