Quotables
"To place a man in a multi-stage rocket and project him into the controlling gravitational field of the moon where the passengers can make scientific observations, perhaps land alive, and then return to earth--all that constitutes a wild dream worthy of Jules Verne. I am bold enough to say that such a man-made voyage will never occur regardless of all future advances."
Lee deForest, American radio pioneer ; 1957
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| Number | Title | Issue Date |
| 8017525 | Processing method A multichamber-type processing apparatus and processing method using same, in which a substrate is reliably neutralized without being damaged, thereby ensuring excellent accuracy and throughput. The processing apparatus includes a transfer chamber, etching chambers ... | 09/13/2011 |
| 7884024 | Apparatus and method for optical interference fringe based integrated circuit processing An apparatus and method for processing an integrated circuit employing optical interference fringes. During processing, one or more wavelength lights are directed on the integrated circuit and based upon the detection of interference fringes and characteristics of t... | 02/08/2011 |
| 7846847 | Method of separating layers of material A lift off process is used to separate a layer of material from a substrate by irradiating an interface between the layer of material and the substrate. According to one exemplary process, the layer is separated into a plurality of sections corresponding to dies on ... | 12/07/2010 |
| 7745340 | Method of clearing electrical contact pads in thin film sealed OLED devices A process of cleaning wire bond pads associated with OLED devices, including the steps of depositing on the wire bond pads one or more layers of ablatable material, and ablating the one or more layers with a laser, thereby exposing a clean wire bond pad. ... | 06/29/2010 |
| 7674719 | Via hole machining for microwave monolithic integrated circuits A method for forming a via in a sapphire substrate with a laser machining system that includes an ultrafast pulsed laser source. The sapphire substrate is provided. Pulses of laser light are substantially focused to a beam spot on the first surface of the sapphire s... | 03/09/2010 |
| 7648916 | Method and apparatus for performing hydrogen optical emission endpoint detection for photoresist strip and residue removal Methods for monitoring and detecting optical emissions while performing photoresist stripping and removal of residues from a substrate or a film stack on a substrate are provided herein. In one embodiment, a method is provided that includes positioning a substrate c... | 01/19/2010 |
| 7605089 | Method of manufacturing an electronic device A method of manufacturing an electronic device is provided wherein an interconnect is made using 193 nm lithography. No deformation of the desired linewidth takes place in that during a plasma gas is used which dissociates in low-weight ions. The electronic device i... | 10/20/2009 |
| 7589025 | Semiconductor processing Methods are disclosed for providing reduced particle generating silicon carbide. The silicon carbide articles may be used as component parts in apparatus used to process semiconductor wafers. The reduced particle generation during semiconductor processing reduces co... | 09/15/2009 |
| 7482277 | Multilevel fabrication processing by functional regrouping of material deposition, lithography, and etching A method of multilevel microfabrication processing is provided. The method includes providing a planar substrate that comprises one or more material layers. A first hardmask layer placed on top of the substrate is patterned into the lithographic pattern desired for ... | 01/27/2009 |
| 7479457 | Gas mixture for removing photoresist and post etch residue from low-k dielectric material and method of use thereof Atomic oxygen generated in oxygen stripping plasmas reacts with and damages low-k dielectric materials during stripping of dielectric post etch residues. While damage of low-k dielectric materials during stripping of dielectric post etch residues is lower with hydro... | 01/20/2009 |
| 7427566 | Method of making an electronic device cooling system A method is provided. The method includes forming a conductive layer on an inner surface of a substrate and providing a sacrificial layer over the conductive layer. The method includes forming a plurality of channels in the sacrificial layer and plating the sacrific... | 09/23/2008 |
| 7419913 | Methods of forming openings into dielectric material This invention includes methods of forming openings into dielectric material. In one implementation, an opening is partially etched through dielectric material, with such opening comprising a lowest point and opposing sidewalls of the dielectric material. At least r... | 09/02/2008 |
| 7416990 | Method for patterning low dielectric layer of semiconductor device A method for patterning a low dielectric insulating layer of a semiconductor device improves adhesion between a photoresist and the low dielectric (Low-K) insulating layer by removing at least one hydroxyl group from a surface of the Low-K insulating layer with a be... | 08/26/2008 |
| 7413995 | Etched interposer for integrated circuit devices In one embodiment, a package-to-package stack is assembled comprising a first integrated circuit package, and a second integrated circuit package which are mechanically and electrically connected using an interposer. In one embodiment, the interposer 106 incl... | 08/19/2008 |
| 7396482 | Post exposure resist bake A preferred embodiment of the invention provides a method for forming an integrated circuit. The method comprises forming a resist layer on a substrate. Preferably, the photoresist layer comprises a photo acid generator (PAG). Embodiments include irradiating the res... | 07/08/2008 |
| 7394067 | Systems and methods for reducing alteration of a specimen during analysis for charged particle based and other measurement systems Systems and methods for reducing alteration of a specimen during by charged particle based and other measurements systems are provided. One system configured to reduce alteration of a specimen during analysis includes a vacuum chamber in which the specimen is dispos... | 07/01/2008 |
| 7387955 | Field effect transistor and method for manufacturing the same A field effect transistor having a T- or Γ-shaped fine gate electrode of which a head portion is wider than a foot portion, and a method for manufacturing the field effect transistor, are provided. A void is formed between the head portion of the gate electrode and... | 06/17/2008 |
| 7384873 | Manufacturing process of semiconductor device A method of manufacturing a semiconductor device, includes: forming a resin layer with a resin containing an aromatic compound on a surface, where an electrode is formed, of a semiconductor substrate, by avoiding at least part of the electrode; removing an oxide fil... | 06/10/2008 |
| 7381943 | Neutral particle beam processing apparatus The present invention relates to a neutral particle beam processing apparatus. More specifically, the present invention relates to a neutral particle beam processing apparatus comprising a plasma discharging space inside which processing gases are converted to plasm... | 06/03/2008 |
| 7368390 | Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition process A carbon hard mask layer is applied to a substrate to be patterned by means of a plasma-enhanced deposition process in such a manner that it has a hardness comparable to that of diamond in at least one layer thickness section. During the production of this diamond-l... | 05/06/2008 |
| 7368362 | Methods for increasing photo alignment margins Methods and structures are provided for increasing alignment margins when contacting pitch multiplied interconnect lines with other conductive features in memory devices. The portions of the lines at the periphery of the memory device are formed at an angle and are ... | 05/06/2008 |
| 7365016 | Anhydrous HF release of process for MEMS devices A method of etching a sacrificial oxide layer covering an etch-stop silicon nitride underlayer, involves exposing the sacrificial oxide to anhydrous HF at a temperature of less than about 100° C. and/or at vacuum level lower than 40 Torr; and subsequently performin... | 04/29/2008 |
| 7361605 | System and method for removal of photoresist and residues following contact etch with a stop layer present In processing an integrated circuit structure including a contact arrangement that is initially covered by a stop layer, a first plasma is used to etch to form openings through an overall insulation layer covered by a patterned layer of photoresist such that one con... | 04/22/2008 |
| 7361606 | Method of forming a metal line and method of manufacturing display substrate having the same A method of forming a metal line is provided. A first metal layer and a second metal layer protecting the first metal layer are formed on a base substrate. The first metal layer includes aluminum or aluminum alloy. A photoresist pattern having a linear shape is form... | 04/22/2008 |
| 7361612 | Barrier coating compositions containing silicon and methods of forming photoresist patterns using the same Provided are example embodiments of the invention including a range of polymer structures suitable for incorporation in barrier compositions for use, for example, in immersion photolithography in combination with a suitable solvent or solvent system. These polymers ... | 04/22/2008 |
| 7354781 | Method of manufacturing field emission device A method of manufacturing a field emission device (FED) using a photoresist for performing multi-patterning processes, whereby different structures can be multi-patterned using a single photoresist mask. The photoresist has a solubility to a solvent by post-exposure... | 04/08/2008 |
| 7355173 | Delineation of wafers A method of junction delineation of non-epitaxial wafers comprises the steps of preparing a sample of the wafer, staining the sample using a mixture of between one and three parts hydrofluoric acid to fifty parts nitric acid to twenty parts water, and scanning the s... | 04/08/2008 |
| 7354523 | Methods for sidewall etching and etching during filling of a trench A method for sidewall etching includes providing a substrate having a trench defined therein, with the trench having fill material disposed over a bottom thereof, along a sidewall thereof, and at the trench opening. The fill material along the sidewall of the trench... | 04/08/2008 |
| 7345003 | Semiconductor device manufacturing method, wafer, and wafer manufacturing method A semiconductor device manufacturing method capable of making in-plane temperature distribution on a wafer uniform at heat treatment time. Before heat treatment is performed by irradiating the wafer with lamp light from the side of a device formed area where semicon... | 03/18/2008 |
| 7344983 | Clustered surface preparation for silicide and metal contacts A cluster tool is provided for the implementing of a clustered and integrated surface pre-cleaning of the surface of semiconductor devices. More particularly, there is provided a cluster tool and a method of utilization thereof in an integrated semiconductor device ... | 03/18/2008 |
| 7335600 | Method for removing photoresist A method for removing photoresist is described. A substrate having a photoresist to be removed thereon is provided, and then an ashing process is performed to remove most of the photoresist. The substrate is then subjected to a surface treatment that provides suffic... | 02/26/2008 |
| 7332440 | Wet etching apparatus and method A wet etching apparatus and method to shorten processing time and to eliminate formation of unintended mask pattern are described. In the conventional art, after a mask pattern is formed, alien substances such as water mist or stain are left on the substrate. The al... | 02/19/2008 |
| 7322368 | Plasma cleaning gas and plasma cleaning method A plasma cleaning gas for CVD chamber is a gas for cleaning silicon-containing deposits on the surface of a CVD chamber inner wall and the surfaces of members placed inside the CVD chamber after film forming treatment on a substrate by a plasma CVD apparatus. The cl... | 01/29/2008 |
| 7323418 | Etch-back process for capping a polymer memory device The present invention leverages an etch-back process to provide an electrode cap for a polymer memory element. This allows the polymer memory element to be formed within a via embedded in layers formed on a substrate. By utilizing the etch-back process, the present ... | 01/29/2008 |
| 7320906 | Thin film transistor array panel and manufacturing method thereof A method of manufacturing a thin film transistor array panel is provided, which includes: forming a gate line on a substrate; depositing a gate insulating layer and a semiconductor layer in sequence on the gate line; depositing a lower conductive film and an upper c... | 01/22/2008 |
| 7316933 | Method for producing an annular microstructure element An annular microstructure element, in particular an annularly arranged monolayer or multilayer thin film, is formed over a substrate (S), e.g., for use in a magnetoresistive memory. To that end, a masking layer is applied over the substrate. An opening (C) is etched... | 01/08/2008 |
| 7279257 | Pattern forming method, method of manufacturing thin film transistor substrate, method of manufacturing liquid crystal display and exposure mask The invention relates to a pattern forming method, a method of manufacturing a TFT substrate, a method of manufacturing a liquid crystal display and an exposure mask and provides a pattern forming method, a method of manufacturing a TFT substrate, a method of manufa... | 10/09/2007 |
| 7276449 | Gas assisted method for applying resist stripper and gas-resist stripper combinations A method for moving resist stripper across the surface of a semiconductor substrate includes applying a wet chemical resist stripper, such as an organic or oxidizing wet chemical resist stripper, to at least a portion of a photomask positioned over the semiconductor... | 10/02/2007 |
| 7271105 | Method for making a micro-fluid ejection device A method of etching a semiconductor substrate. The method includes the steps of applying a photoresist etch mask layer to a device surface of the substrate. A select first area of the photoresist etch mask is masked, imaged and developed. A select second area of the... | 09/18/2007 |
| 7268083 | Plasma etching apparatus and plasma etching process A plasma etching apparatus includes: a chamber capable of reducing pressure; a substrate support provided inside the chamber to place a substrate; a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applie... | 09/11/2007 |
