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| Number | Title | Issue Date |
| 8097540 | Method of opening pad in semiconductor device A method of opening a pad in a semiconductor device. A protective film on a pad may be etched with a pad opening pattern as a mask. Dielectric heating may be performed on the pad opened by etching the protective film. Organic material containing C and F groups on th... | 01/17/2012 |
| 7825032 | Fabricating a set of semiconducting nanowires, and electric device comprising a set of nanowires The method of fabricating semiconducting nanowires having a desired wire diameter includes providing pre-fabricated semiconducting nanowires, at least one pre-fabricated nanowire having a wire diameter larger than the desired wire diameter (d); and reducing the wire... | 11/02/2010 |
| 7615494 | Method for fabricating semiconductor device including plug A method for fabricating a semiconductor device includes forming an insulation layer over a substrate, etching the insulation layer using a hard mask pattern to form a contact hole, filling the contact hole with a conductive layer, etching the conductive layer to fo... | 11/10/2009 |
| 7569487 | Method for atomic layer deposition of materials using a pre-treatment for semiconductor devices A method for forming atomic layer deposition. The method includes placing a semiconductor substrate (e.g., wafer, LCD panel) including an upper surface in a chamber. The upper surface includes one or more carbon bearing species and a native oxide layer. The method i... | 08/04/2009 |
| 7491649 | Plasma processing apparatus A plasma processing apparatus includes a chamber having a support for a substrate, and at least one gas inlet into the chamber. The apparatus is configured to alternately introduce an etch gas and a deposition gas into the chamber through the at least on gas inlet, ... | 02/17/2009 |
| 7419902 | Method of manufacture of semiconductor integrated circuit In a process for the manufacture of a semiconductor integrated circuit device having an inlaid interconnect structure by embedding a conductor film in a recess, such as a trench or hole, formed in an organic insulating film which constitutes an interlevel dielectric... | 09/02/2008 |
| 7396771 | Plasma etching apparatus and plasma etching method A plasma etching apparatus includes a processing chamber in which a specimen is subjected to plasma processing, a specimen holder for holding the specimen, the specimen holder including a temperature controller for controlling temperatures at at least 2 positions of... | 07/08/2008 |
| 7378703 | Semiconductor device having step gates and method for fabricating the same The semiconductor device includes a substrate including a first active region and a second active region having a greater height than that of the first active region. A gate pattern has a step structure, which is formed on a border region between the first active re... | 05/27/2008 |
| 7368392 | Method of fabricating a gate structure of a field effect transistor having a metal-containing gate electrode A method of etching metals and/or metal-containing compounds using a plasma comprising a bromine-containing gas. In one embodiment, the method is used during fabrication of a gate structure of a field effect transistor having a titanium nitride gate electrode, an ul... | 05/06/2008 |
| 7365017 | Method for finishing metal line for semiconductor device A method for finishing a metal line for a semiconductor device is disclosed, in which polymer generated when forming the metal line including aluminum and its alloy is effectively removed and the metal line is prevented from being eroded. A chlorine radical and a ch... | 04/29/2008 |
| 7326652 | Atomic layer deposition using photo-enhanced bond reconfiguration An atomic layer deposition process that reduces defective bonds formed when depositing atomic layers on a substrate or atomic layer when forming an integrated circuit device. As the layers are formed, a substrate or previous layer is exposed to a first reactant. Aft... | 02/05/2008 |
| 7320941 | Plasma stabilization method and plasma apparatus There is disclosed a plasma technique in which a plasma generation technique frequently used in various fields including a semiconductor manufacturing process is used, and generation of plasma instability (high-speed impedance change of a plasma) can efficiently be ... | 01/22/2008 |
| 7309515 | Method for fabricating an imprint mold structure The present invention is related to a method for fabricating an imprint mold which can be used in the field of nano-imprint lithography. Firstly, a diamond film and a photoresist film are successively formed onto a substrate; wherein the photoresist film is more cap... | 12/18/2007 |
| 7309655 | Etching method in a semiconductor processing and etching system for performing the same Disclosed is an etching method for semiconductor processing by which a pattern loading phenomenon is reduced. First, plasma is generated while setting a bias power applied to a wafer to zero and applying a source power. After a predetermined time period, an etching ... | 12/18/2007 |
| 7291564 | Method and structure for facilitating etching A method and system for facilitating etching. Specifically, the method includes incorporating a fluorescent marker in a layer of a grouping of patterned layers. Etching of the group of patterned layers is controlled based upon the fluorescent marker. ... | 11/06/2007 |
| 7285498 | Etching method An etching method etches an organic film by using an inorganic film as a mask at a high etch rate, in a satisfactory etch profile in a satisfactory in-plane uniformity without causing the inorganic film to peel off. An organic film formed on a workpiece is etched by... | 10/23/2007 |
| 7279382 | Methods of manufacturing semiconductor devices having capacitors An example method of manufacturing a semiconductor device having a capacitor includes sequentially depositing a lower metal layer, an insulating layer and an upper metal layer on a semiconductor substrate, removing a first photoresist pattern by using O2/... | 10/09/2007 |
| 7267848 | Method of fabricating a protective film by use of vacuum ultraviolet rays In a method of fabricating a protective film, a vacuum ultraviolet radiation CVD (Chemical Vapor Deposition) system is used. The method includes providing a vacuum ultraviolet rays generator, a reactor provided with a platform for supporting a substrate, a heat reta... | 09/11/2007 |
| 7268083 | Plasma etching apparatus and plasma etching process A plasma etching apparatus includes: a chamber capable of reducing pressure; a substrate support provided inside the chamber to place a substrate; a first electrode which is arranged outside and in proximity to the chamber and to which high frequency power is applie... | 09/11/2007 |
| 7250317 | Method of fabricating optical waveguide reflectors The invention relates to a device for introducing light into a waveguide, which device comprises: a light source, preferably an electro-optical converter, more preferably a VCSEL, for generating a light beam; a reflector for receiving at least a part of the light be... | 07/31/2007 |
| 7247584 | System and method for selectively increasing surface temperature of an object A system and method for selectively increasing the thermal effect of a radiant energy source to the surface of an object relative to the substrate is described in the context of rapid thermal processing of semiconductor wafers, and apparatus produced therefrom. A ra... | 07/24/2007 |
| 7247575 | Multi-step EBR process for photoresist removal An edge bead removal process is disclosed. The process includes providing a wafer having a feature layer, coating a photoresist on the feature layer, rotating the wafer, and removing an edge bead from the wafer by removing an edge bump portion from the edge bead and... | 07/24/2007 |
| 7226852 | Preventing damage to low-k materials during resist stripping A method of forming a feature in a low-k dielectric layer is provided. A low-k dielectric layer is placed over a substrate. A patterned photoresist mask is placed over the low-k dielectric layer. At least one feature is etched into the low-k dielectric layer. A CO c... | 06/05/2007 |
| 7205241 | Method for manufacturing semiconductor device with contact body extended in direction of bit line Methods for manufacturing semiconductor devices with contact bodies extended in a direction of a bit line to increase the contact area between a contact body and a storage electrode is provided. In one aspect a method includes forming gate lines on a semiconductor s... | 04/17/2007 |
| 7195716 | Etching process and patterning process An etching process is described. A material layer having a bottom anti-reflection coating (BARC) and a patterned photoresist layer thereon is provided. An etching step is performed to the BARC using the patterned photoresist layer as a mask. A cleaning step is perfo... | 03/27/2007 |
| 7192875 | Processes for treating morphologically-modified silicon electrode surfaces using gas-phase interhalogens Processes for treating a morphologically-modified surface of a silicon upper electrode of a plasma processing chamber include exposing the surface to a gas composition containing at least one gas-phase halogen fluoride. The gas composition is effective to remove sil... | 03/20/2007 |
| 7188033 | Method and system of computing and rendering the nature of the chemical bond of hydrogen-type molecules and molecular ions Provided is a system of computing and rendering a nature of a chemical bond based on physical, Maxwellian solutions of charge, mass, and current density functions of hydrogen-type molecules and molecular ions. The system includes a processor for processing Maxwellia... | 03/06/2007 |
| 7176139 | Etching method in a semiconductor processing and etching system for performing the same Disclosed is an etching method for semiconductor processing by which a pattern loading phenomenon is reduced. First, plasma is generated while setting a bias power applied to a wafer to zero and applying a source power. After a predetermined time period, an etching ... | 02/13/2007 |
| 7166535 | Plasma etching of silicon carbide A process for plasma etching silicon carbide with selectivity to an overlying and/or underlying dielectric layer of material. The dielectric material can comprise silicon dioxide, silicon oxynitride, silicon nitride or various low-k dielectric materials including or... | 01/23/2007 |
| 7166530 | Method of forming contact pads In a method of forming a semiconductor structure, a substrate comprising at least one contact pad is provided. A passivation layer is formed over the substrate. A mask which does not cover a portion of the passivation layer located over the at least one contact pad ... | 01/23/2007 |
| 7160671 | Method for argon plasma induced ultraviolet light curing step for increasing silicon-containing photoresist selectivity A method for increasing etching selectivity of a developed silicon-containing photoresist layer on a non-silicon containing photoresist layer on a substrate. The developed silicon-containing photoresist layer includes polymer chains containing silicon. Next, the dev... | 01/09/2007 |
| 7160812 | Method for preventing electrode deterioration in etching apparatus A method for preventing the deterioration of an electrode caused by the build up of deposits in openings of the electrode. Gas is supplied to each of the openings in order to prevent deposits from adhering to the openings before or after the etching treatment. ... | 01/09/2007 |
| 7148148 | Mask forming and removing method, and semiconductor device, an electric circuit, a display module, a color filter and an emissive device manufactured by the same method A mask forming method that can reduce manufacturing cost is disclosed. The method forms a mask on the surface of a member to be processed in order to form a desired pattern using liquid material for patterning. The method also includes applying resist to the entire ... | 12/12/2006 |
| 7138343 | Method of producing a substrate with a surface treated by a vacuum treatment process, use of said method for the production of coated workpieces and plasma treatment chamber In order to produce substrate surfaces with a given two-dimensional surface distribution arising from a treatment using a vacuum treatment process, an inhomogeneous plasma (5) with a density distribution is generated and moved relative to the substrate (9 | 11/21/2006 |
| 7129178 | Reducing defect formation within an etched semiconductor topography A method is provided which includes etching one or more layers in an etch chamber while introducing a noble gas heavier than helium into the etch chamber. In a preferred embodiment, the introduction of such a noble gas may reduce the formation of defects within an e... | 10/31/2006 |
| 7125786 | Method of forming vias in silicon carbide and resulting devices and circuits A method of fabricating an integrated circuit on a silicon carbide substrate is disclosed that eliminates wire bonding that can otherwise cause undesired inductance. The method includes fabricating a semiconductor device in epitaxial layers on a surface of a silicon... | 10/24/2006 |
| 7105100 | System and method for gas distribution in a dry etch process A system and method for distributing gas to a substrate in a dry etch chamber make use of different flow channels to distribute the gas to different portions of a substrate. A first flow channel can be oriented to distribute gas to an inner portion of the substrate.... | 09/12/2006 |
| 7101797 | Substrate processing device and processing method In a state where a process gas including SF.sub. 6 and O.sub. 2 is supplied in a chamber, a laser light irradiator provided outside the chamber irradiates a laser light onto a substrate. At the portion of the substrate onto which the laser light is irradiated, the m... | 09/05/2006 |
| 7102132 | Process monitoring using infrared optical diagnostics A method and apparatus for real-time monitoring of the substrate and the gaseous process environment in a semi-conductor process step is described. The method uses infrared spectroscopy for in-situ analysis of gaseous molecular species in the process region and char... | 09/05/2006 |
| 7094641 | Method for forming wiring pattern, method for manufacturing semiconductor device, electro-optic device and electronic equipment A method is provided that is capable of forming a wiring pattern having an extremely flat surface and few convexo-concave shapes on a substrate on which the wiring pattern is formed. The method to form a wiring pattern includes a bank forming process, a conductive l... | 08/22/2006 |
