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| Number | Title | Issue Date |
| 8173549 | Methods of forming semiconductor device patterns A first mask layer pattern including a plurality of parallel line portions is formed on an etch target layer on a semiconductor substrate. A sacrificial layer is formed on the first mask layer pattern and portions of the etch target layer between the parallel line p... | 05/08/2012 |
| 8158525 | Plasma etching method and apparatus, and method of manufacturing liquid ejection head The plasma etching method includes: an etching step of placing, on a stage in a chamber, a substrate in which a prescribed mask pattern is formed by a protective film on a surface of a material to be etched, generating a plasma in the chamber while supplying process... | 04/17/2012 |
| 8158524 | Line width roughness control with arc layer open To achieve the foregoing and in accordance with the purpose of the present invention a method for etching an etch layer disposed below an antireflective coating (ARC) layer below a patterned mask is provided. The ARC layer is opened, and features are etched into the... | 04/17/2012 |
| 8158523 | Quantification of hydrophobic and hydrophilic properties of materials A non-destructive and simple analytical method is provided which allows in situ monitoring of plasma damage during the plasma processing such as resist stripping. If a low-k film is damaged during plasma processing, one of the reaction products is water, which is re... | 04/17/2012 |
| 8148270 | Low K dielectric surface damage control A method of removing a silicon nitride or a nitride-based bottom etch stop layer in a copper damascene structure by etching the bottom etch stop layer is disclosed, with the method using a high density, high radical concentration plasma containing fluorine and oxyge... | 04/03/2012 |
| 8148268 | Plasma treatment apparatus and plasma treatment method The invention provides a plasma treatment apparatus or a plasma treatment method having a high productivity while maintaining a stable treatment performance. In a plasma treatment apparatus feeding a plurality of gases fed into the treatment chamber and treating a s... | 04/03/2012 |
| 8148269 | Boron nitride and boron-nitride derived materials deposition method A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition cha... | 04/03/2012 |
| 8138095 | Method of substrate treatment, process for producing semiconductor device, substrate treating apparatus, and recording medium Substrate processing apparatus 100 includes supporting table 103 for not only supporting a target substrate W but also heating the target substrate W; processing chamber 101 having the supporting table disposed therein; and gas supply unit 10... | 03/20/2012 |
| 8129282 | Plasma etching method and computer-readable storage medium In a plasma etching method, a substrate, on which an oxide film as a target layer to be etched, a hard mask layer, and a patterned photoresist are sequentially formed, is loaded into the processing chamber and mounted on a lower electrode. A processing gas containin... | 03/06/2012 |
| 8129281 | Plasma based photoresist removal system for cleaning post ash residue A method of cleaning a low dielectric constant film in a lithographic process includes providing a dielectric film having thereover a resist composition, the dielectric film having a dielectric constant no greater than about 4.0, and stripping the resist composition... | 03/06/2012 |
| 8124536 | Manufacturing method of capacitor electrode, manufacturing system of capacitor electrode, and storage medium A method for manufacturing a capacitor electrode by removing a silicon oxide film on a surface of a substrate, including: transforming the silicon oxide film into a reaction product by supplying a gas containing a halogen element to chemically react with the silicon... | 02/28/2012 |
| 8101524 | Technique for enhancing the fill capabilities in an electrochemical deposition process by edge rounding of trenches During the formation of a metal line in a low-k dielectric material, an upper portion of a trench formed in a capping layer and the low-k dielectric material is treated to provide enlarged tapering or corner rounding, thereby significantly improving the fill capabil... | 01/24/2012 |
| 8093154 | Etchant treatment processes for substrate surfaces and chamber surfaces In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about | 01/10/2012 |
| 8071483 | Semiconductor device manufacturing method and semiconductor device manufacturing apparatus In a manufacturing process of a semiconductor device by forming a structure film on a substrate in a reaction chamber of a manufacturing apparatus, cleaning inside the reaction chamber is performed. That is, a precoat film made of a silicon nitride film containing b... | 12/06/2011 |
| 8034720 | Substrate processing method and substrate processing apparatus A substrate processing method that can remove a silicon nitride film without damaging a thermally-oxidized film. A substrate having at least a thermally-oxidized film and a silicon nitride film formed on the thermally-oxidized film is heated to a temperature of not ... | 10/11/2011 |
| 7994065 | Method for fabricating semiconductor device A method for fabricating a semiconductor device includes stacking a spin on carbon (SOC) layer and an multifunction hard mask (MFHM) layer on a substrate, forming a photoresist pattern over the MFHM layer, first etching the MFHM layer using a first amount of a fluor... | 08/09/2011 |
| 7989350 | Method for fabricating semiconductor device with recess gate A method for fabricating a semiconductor device includes forming a structure including a sacrificial layer and a hard mask over a substrate, performing a plasma treatment over the structure including the hard mask to form a protective layer over the hard mask, etchi... | 08/02/2011 |
| 7989351 | Method for manufacturing a wiring over a substrate A wiring over a substrate capable of reducing particles between wirings and a method for manufacturing the wiring is disclosed. A wiring over a substrate capable of preventing short-circuiting between wirings due to big difference in projection and depression betwee... | 08/02/2011 |
| 7985688 | Notch stop pulsing process for plasma processing system A method for etching a substrate having a silicon layer in a plasma processing chamber having a bottom electrode on which the substrate is disposed on during etching. The method includes performing a main etch step. The method also includes terminating main etch ste... | 07/26/2011 |
| 7985691 | Etching method, semiconductor and fabricating method for the same An organic/inorganic hybrid film represented by SiCxHyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion o... | 07/26/2011 |
| 7985689 | Patterning 3D features in a substrate Methods of forming a 3D structure in a substrate are disclosed. A layer of resist is deposited on the substrate. The layer of resist is patterned to define an edge at a predetermined location. The resist is reflowed to form a tapered region extending from the etch. ... | 07/26/2011 |
| 7985690 | Method for a gate last process A method for fabricating a semiconductor device is disclosed. The method includes providing a substrate; forming one or more gate structures over the substrate; forming a buffer layer over the substrate, including over the one or more gate structures; forming an etc... | 07/26/2011 |
| 7964510 | Method for forming pattern of a semiconductor device A method for forming a pattern of a semiconductor device includes: forming a first mask film and a second mask film over an underlying layer; partially etching the first and second mask films using a photoresist mask pattern as an etching mask to form a intermediate... | 06/21/2011 |
| 7955984 | High speed high power nitride semiconductor device A nitride semiconductor device has: a substrate; a semiconductor lamination formed on the substrate, and including a channel layer of nitride semiconductor; source and drain electrodes formed on the semiconductor lamination in ohmic contact with the channel layer; a... | 06/07/2011 |
| 7955985 | Method of forming micro pattern of semiconductor device A method for fabricating a semiconductor device includes forming a target etch layer over a substrate, a first auxiliary layer over the target etch layer, an isolation layer over the first auxiliary layer, and a second auxiliary layer over the isolation layer. A fir... | 06/07/2011 |
| 7939450 | Method and apparatus for spacer-optimization (S-O) The invention can provide a method of processing a substrate using S-O processing sequences and evaluation libraries that can include one or more optimized spacer creation and evaluation procedures. ... | 05/10/2011 |
| 7935637 | Resist stripping methods using backfilling material layer A method for fabricating a microelectronic structure provides for forming a backfilling material layer at least laterally adjacent, and preferably laterally adjoining, a resist layer located over a substrate. Preferably, the resist layer comprises a surface treated ... | 05/03/2011 |
| 7928012 | Integrated circuit with upstanding stylus A stylus, an integrated circuit (IC) and method of forming the IC. The stylus extends upward from its apex and has a substantially circular cross section that decreases in diameter upward from the apex. The stylus is formed in a mold that may be formed in an orifice... | 04/19/2011 |
| 7902077 | Semiconductor device manufacturing method that recovers damage of the etching target while supplying a predetermined recovery gas A semiconductor device manufacturing method includes: forming an etching mask having a predetermined circuit pattern on a surface of an etching target film disposed on a semiconductor substrate; etching the etching target film through the etching mask to form a groo... | 03/08/2011 |
| 7892979 | Columnar structured material and method of manufacturing the same A method of manufacturing a dot pattern includes the steps of preparing a structured material composed of a plurality of columnar members containing a first component and a region containing a second component different from the first component surrounding the colum... | 02/22/2011 |
| 7892978 | Electron induced chemical etching for device level diagnosis A method of imaging and identifying materials, contamination, fabrication errors, and defects on and below the surface of an integrated circuit (IC) is described. The method may be used in areas smaller than one micron in diameter, and may remove IC layers, either s... | 02/22/2011 |
| 7888267 | Method for etching silicon-containing ARC layer with reduced CD bias A method of dry developing a multi-layer mask having a silicon-containing anti-reflective coating (ARC) layer on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer... | 02/15/2011 |
| 7884023 | System and method for using siliciding PECVD silicon nitride as a dielectric anti-reflective coating and hard mask An electronic apparatus is disclosed that comprises a silicon nitride material that has an increased silicon content. The silicon nitride material is manufactured by exposing plasma enhanced chemical vapor deposition (PECVD) silicon nitride to an increased flow of s... | 02/08/2011 |
| 7879730 | Etch selectivity enhancement in electron beam activated chemical etch Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. B... | 02/01/2011 |
| 7855150 | Plasma system and method for anisotropically etching structures into a substrate A method and a plasma system are provided for anisotropically etching structures into a substrate positioned in an etching chamber, e.g., structures defined using an etching mask in a silicon substrate, using a plasma. For this purpose, the etching chamber is suppli... | 12/21/2010 |
| 7851367 | Method for plasma processing a substrate A substrate plasma processing apparatus includes a chamber of which an interior is evacuated under a predetermined vacuum condition; an RF electrode which is disposed in the chamber and configured so as to hold a substrate to be processed on a main surface thereof; ... | 12/14/2010 |
| 7846845 | Integrated method for removal of halogen residues from etched substrates in a processing system A method and system for removing volatile residues from a substrate are provided. In one embodiment, the volatile residues removal process is performed en-routed in the system while performing a halogen treatment process on the substrate. The volatile residues remov... | 12/07/2010 |
| 7846846 | Method of preventing etch profile bending and bowing in high aspect ratio openings by treating a polymer formed on the opening sidewalls High aspect ratio contact openings are etched while preventing bowing or bending of the etch profile by forming a highly conductive thin film on the side wall of each contact opening. The conductivity of the thin film on the side wall is enhanced by ion bombardment ... | 12/07/2010 |
| 7838431 | Method for surface treatment of semiconductor substrates Methods and apparatus for processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include providing a substrate having at least one of a defect or a contaminant disposed on or near a surface of the substrate; and selec... | 11/23/2010 |
| 7838430 | Plasma control using dual cathode frequency mixing A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, a... | 11/23/2010 |
