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| Number | Title | Issue Date |
| 8101452 | Image sensor and method for manufacturing the same An image sensor and a method for manufacturing the same are disclosed. The image sensor can include a passivation layer on a substrate having a pad area and a pixel area, a color filter layer on the passivation layer over the pixel area, a first low temperature oxid... | 01/24/2012 |
| 8101453 | Image sensor and method for fabricating the same An image sensor of a semiconductor and a method for fabricating the same includes a photodiode; an interlayer dielectric layer formed over the photodiode; a wave guide including an ion implantation layer formed in the interlayer dielectric; a color filter formed ove... | 01/24/2012 |
| 8097485 | Solid state image pickup device and manufacturing method thereof A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each oth... | 01/17/2012 |
| 8093093 | Semiconductor imaging instrument and manufacturing method thereof, and camera and manufacturing method thereof A semiconductor imaging instrument is disclosed, including a prescribed substrate, an imaging device array provided on the substrate and having plural semiconductor imaging devices and electrodes for outputting a signal charge upon photoelectric conversion of receiv... | 01/10/2012 |
| 8084289 | Method of fabricating image sensor and reworking method thereof A method of fabricating an image sensor device is provided. First, a substrate comprising a pixel array region and a pad region is provided. A patterned metal layer and a first planarization layer having an opening exposing the patterned metal layer in the pad regio... | 12/27/2011 |
| 8076171 | Mold and manufacturing method for display device A mold for a display device, comprises a supporting frame; the supporting frame comprising at least one depressed pattern forming part on a first side of the supporting frame, and an organic layer removing part which is formed on a circumference of the pattern formi... | 12/13/2011 |
| 8076172 | Method of manufacturing solid-state imaging device and method of manufacturing electronic apparatus A method of manufacturing a solid-state imaging device, where a signal circuit is formed on an insulating interlayer on a first side of a semiconductor substrate in which a photoelectric conversion part is formed and light is incident on the photoelectric conversion... | 12/13/2011 |
| 8071416 | Method of forming a uniform color filter array A method of forming a uniform color filter array. In one embodiment, a first compensation layer is formed over a non-planar color filter array and is patterned to form material structures. A second compensation layer is blanket deposited over the first layer. A tech... | 12/06/2011 |
| 8039288 | Semiconductor device and manufacturing method thereof A high performance electric device which uses an adhesive layer over a substrate. A color filter is over a substrate, and an adhesive layer is also located over the substrate and color film. An insulating layer is over the adhesive layer, and thin film transistors c... | 10/18/2011 |
| 8030117 | Image sensor and method for manufacturing the same A method for manufacturing an image sensor includes forming first to third photodiodes and first to third color filters corresponding thereto; forming a photoresist film including photosensitive materials on the upper surfaces of the first to third color filters; fo... | 10/04/2011 |
| 8030115 | Solid-state image pickup device with color filter and method of manufacturing the same A solid-state image pickup device which includes a substrate carrying a plurality of photoelectric conversion elements which are two-dimensionally arranged therein the substrate having a plurality of rectangular light-receiving faces each corresponding to the photoe... | 10/04/2011 |
| 8030116 | CMOS image sensor and method for fabricating the same A CMOS image sensor and a method for fabricating the same are disclosed. The method includes forming a plurality of color filters on a substrate, each color filter having a curvature, and forming microlenses on the color filters that each has a radius of curvature t... | 10/04/2011 |
| 8017426 | Color filter array alignment mark formation in backside illuminated image sensors A backside illuminated image sensor includes a sensor layer comprising photosensitive elements of the pixel array, an epitaxial layer formed on a frontside surface of the sensor layer, and a color filter array formed on a backside surface of the sensor layer. The ep... | 09/13/2011 |
| 8003429 | Method of fabricating image sensor A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer ... | 08/23/2011 |
| 8003428 | Method of forming an inverted lens in a semiconductor structure A flat-top convex-bottom lower lens is formed by first applying a positive tone photoresist over a silicon oxide layer and an optional metallic barrier layer thereupon in a back-end-of-line (BEOL) metallization structure. The positive tone photoresist is exposed und... | 08/23/2011 |
| 7989254 | Method for fabricating color filter using surface plasmon and method for fabricating liquid crystal display device Discussed are methods for fabricating a color filter using a surface plasmon and a liquid crystal display (LCD) device capable of enhancing a transmittance ratio of an LC panel and simplifying entire processes, by forming a transmissive pattern consisting of a plura... | 08/02/2011 |
| 7977143 | CMOS image sensor and fabricating method thereof A CMOS image sensor and fabricating method thereof are disclosed. The method includes forming a plurality of photodiode regions on a semiconductor substrate, forming a plurality of color filters respectively corresponding to the photodiode regions, forming a planari... | 07/12/2011 |
| 7977142 | Manufacturing method of microlens of CMOS image sensor A method of manufacturing an image sensor having a minimized spatial distance between microlenses to improve integration, and thus, enhance the ability of each microlens to condense light incident. ... | 07/12/2011 |
| 7972890 | Methods of manufacturing image sensors Example embodiments may provide methods of manufacturing an image sensor. Example methods of manufacturing an image sensor may include forming a photoelectric converter in a semiconductor substrate, forming an interlayer insulating film covering a surface of the sem... | 07/05/2011 |
| 7935561 | Method of forming shielded gate FET with self-aligned features A method for forming a shielded gate field effect transistor includes the following steps. Trenches are formed in a semiconductor region of a first conductivity type. A shield electrode is formed in a bottom portion of each trench, the shield electrode being insulat... | 05/03/2011 |
| 7935560 | Imagers having electrically active optical elements A method of fabricating a CMOS image sensor comprising an array of active pixel cells. Each active pixel cell includes a substrate; a photosensing device formed at or below a substrate surface for collecting charge carriers in response to incident light; and, one or... | 05/03/2011 |
| 7932122 | Manufacturing method for solid state image pickup device A method of manufacturing a solid state image pickup device including photoelectric conversion elements which are two-dimensionally arranged in a semiconductor substrate, and a color filter having a plurality of color filter patterns differing in color from each oth... | 04/26/2011 |
| 7919351 | CMOS image sensor with multi-layered planarization layer and method for fabricating the same A CMOS image sensor and a method for fabricating the same for preventing contamination and peeling of an array of micro lenses. The CMOS image sensor includes a plurality of photodiodes formed on and/or over a substrate, an insulating film formed on and/or over an e... | 04/05/2011 |
| 7919350 | Image sensor and method of making same An image sensor is formed by providing a semiconductor substrate having first, second and third pixel regions and first and second color filters disposed on their respective pixel regions. A photoresist layer is coated over the first and second color filters and the... | 04/05/2011 |
| 7897426 | Solid state imaging device and fabrication method of solid state imaging device A solid state imaging device comprises: photoelectric conversion portions on or above a substrate; and color filters on or above the respective photoelectric conversion portions. Each of the photoelectric conversion portions comprises: a lower electrode on or above ... | 03/01/2011 |
| 7897427 | Method for manufacturing solid-state image pick-up device There is provided a method for manufacturing a solid-state image device which includes the steps of: forming a silicon epitaxial growth layer on a silicon substrate; forming photoelectric conversion portions, transfer gates, and a peripheral circuit portion in and/o... | 03/01/2011 |
| 7883926 | Methods for fabricating image sensor devices Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passiv... | 02/08/2011 |
| 7883925 | Image sensor and method for fabricating the same An image sensor can include a plurality of photodiodes and a plurality of transistors formed in a semiconductor substrate; a first interlayer insulating layer formed over the semiconductor substrate; a plurality of metal lines formed over the first interlayer insula... | 02/08/2011 |
| 7879641 | Photodetector having dark current correction A method for determining the light intensity of a light signal in each of a plurality of spectral bands is disclosed and a method for fabricating a photodetector is also disclosed. ... | 02/01/2011 |
| 7879639 | Method and device to reduce dark current in image sensors A method to fabricate an image sensor includes providing a semiconductor substrate having a pixel area and a logic area, forming a light sensing element in the pixel area, and forming a first transistor in the pixel area and a second transistor in the logic area. Th... | 02/01/2011 |
| 7879640 | CMOS image sensor and method for fabricating the same A Complementary Metal Oxide Semiconductor (CMOS) image sensor and methods for fabricating the same. In one example embodiment of the invention, a method for manufacturing a Complementary Metal Oxide Semiconductor (CMOS) image sensor includes several acts. First, a m... | 02/01/2011 |
| 7875487 | Passivation planarization A pixel cell is formed by locating a first passivation layer over the final layer of metal lines. Subsequently, the uneven, non-uniform passivation layer is subjected to a planarization process such as chemical mechanical polishing, mechanical abrasion, or etching. ... | 01/25/2011 |
| 7829370 | Image sensor and fabricating method thereof An image sensor and fabricating method thereof which reduces a light intensity differential between a pixel center and a pixel edge and prevents crosstalk. The image sensor can include a plurality of convex lens provided within a passivation layer and in vertical al... | 11/09/2010 |
| 7829371 | Image sensor and method for manufacturing the same An image sensor including an interlayer dielectric layer formed over a semiconductor substrate, a color filter layer formed over the interlayer dielectric layer, a planarization layer formed over the color filter, and a microlens array having a gapless, continuous s... | 11/09/2010 |
| 7824950 | Semiconductor device and method of fabricating the same In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is ... | 11/02/2010 |
| 7816168 | Method for forming color filter A method for forming a color filter is provided. A substrate having a passivation layer thereon is provided. The passivation layer has at least one trench therein within a peripheral region of the substrate. A first color filter layer is formed over the passivation ... | 10/19/2010 |
| 7816169 | Colors only process to reduce package yield loss Disclosed is an ordered microelectronic fabrication sequence in which color filters are formed by conformal deposition directly onto a photodetector array of a CCD, CID, or CMOS imaging device to create a concave-up pixel surface, and, overlayed with a high transmit... | 10/19/2010 |
| 7785918 | Image device and method of manufacturing the same An image device which includes reflowed color filters. Reflowed color filters may be formed by heat treating preliminary color filters. When preliminary color filters are reflowed, color filters of different colors may be formed continuous with each other. Contiguou... | 08/31/2010 |
| 7785919 | Image sensor and method for manufacturing the same An image sensor and a method for manufacturing the same are provided. The image sensor can comprise a substrate, a metal pad, and a sulfur layer. The substrate can include a pixel region and a pad region. The metal pad can be formed of a material containing sulfur a... | 08/31/2010 |
| 7785917 | Image sensor and manufacturing method for the same An image sensor including a first region where a pad is to be formed, and a second region where a light-receiving element is to be formed. A pad is formed over a substrate of the first region. A passivation layer is formed over the substrate of the first and second ... | 08/31/2010 |
