Did You Know...
...that it was melting ice cream that inspired the invention of the outboard motor? It was a lovely August day and Ole Evinrude was rowing his boat to his favorite island picnic spot. As he rowed, he watched his ice cream melt and wished he had a faster way to get to the island. At that moment the idea for the outboard motor was born!
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| Number | Title | Issue Date |
| 8119529 | Method for chemical mechanical polishing a substrate A method for chemical mechanical polishing of a substrate, comprising: providing a substrate, wherein the substrate comprises silicon dioxide; providing a chemical mechanical polishing composition, wherein the chemical mechanical polishing composition comprises: wat... | 02/21/2012 |
| 8088690 | CMP method The instant invention is a method of polishing a substrate including contacting a substrate having at least one metal layer including copper with a chemical-mechanical polishing composition. The CMP composition includes an abrasive, a surfactant, an oxidizer, an org... | 01/03/2012 |
| 8088689 | Method of fabricating semiconductor device A method of fabricating a semiconductor device according to an embodiment includes: forming a core material on a workpiece material; forming a cover film to cover the upper and side surfaces of the core material; after forming the cover film, removing the core mater... | 01/03/2012 |
| 8084364 | Method of fabricating semiconductor device A method of fabricating a semiconductor device, includes forming an amorphous silicon film above a semiconductor substrate, partially removing the amorphous silicon film and partially removing the semiconductor substrate, thereby forming an element isolation trench ... | 12/27/2011 |
| 8080476 | Polishing composition and polishing process To provide a polishing composition particularly useful for an application to polish a conductor layer made of copper in a semiconductor wiring process, and a polishing process employing it. A polishing composition comprising an anionic surfactant and a nonion... | 12/20/2011 |
| 8043970 | Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for r... | 10/25/2011 |
| 8039398 | Method of reducing non-uniformities during chemical mechanical polishing of excess metal in a metallization level of microstructure devices Prior to performing a CMP process for planarizing a metallization level of an advanced semiconductor device, an appropriate cap layer may be formed in order to delay the exposure of metal areas of reduced height level to the highly chemically reactive slurry materia... | 10/18/2011 |
| 8008203 | Substrate, method of polishing the same, and polishing apparatus A polishing method and a polishing apparatus capable of polishing a surface of a substrate made of SiC or diamond extremely smoothly and efficiently without causing subsurface damage are provided. A polishing platen 1 can rotate around a rotating shaft 4 | 08/30/2011 |
| 7867909 | Polishing composition and polishing method A polishing composition contains at least one water soluble polymer selected from the group consisting of polyvinylpyrrolidone and poly(N-vinylformamide), and an alkali, and preferably further contains at least one of a chelating agent and an abrasive grain. The wat... | 01/11/2011 |
| 7842614 | Method for manufacturing semiconductor device and polisher used in the method for manufacturing semiconductor device A method for manufacturing a semiconductor device, including depositing an interconnect material including Cu or Cu alloy over an insulating film, and polishing the interconnect material by CMP with a polishing liquid, wherein the oxidation-reduction potential (ORP)... | 11/30/2010 |
| 7833908 | Slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect and method for planarizing surface of semiconductor device using the same A slurry composition for chemical-mechanical polishing capable of compensating nanotopography effect present on the surface of a wafer, and a method for planarizing the surface of a semiconductor device that utilizes the same are disclosed. The slurry composition of... | 11/16/2010 |
| 7723234 | Method for selective CMP of polysilicon A method of removing polysilicon in preference to silicon dioxide and/or silicon nitride by chemical mechanical polishing. The method removes polysilicon from a surface at a high removal rate while maintaining a high selectivity of polysilicon to silicon dioxide and... | 05/25/2010 |
| 7718536 | Planarization process for pre-damascene structure including metal hard mask A planarization process for a pre-damascene structure is described, wherein the pre-damascene structure includes a metal hard mask that is disposed on a first material layer with a damascene opening therein and a second material layer that fills the damascene openin... | 05/18/2010 |
| 7700489 | Method of manufacturing a semiconductor device A method of manufacturing a semiconductor device includes depositing a SiO2 film on the substrate having formed thereon a wiring pattern; coating a SOG film on the SiO2 film; and polishing the SOG film using a slurry containing cerium oxide and... | 04/20/2010 |
| 7696095 | Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide The present invention provides auto-stopping CMP slurry compositions that minimize post-CMP non-uniformity and also extend the time that polishing can be continued beyond the end point without the risk of over-polishing the dielectric silicon dioxide film. Auto-stop... | 04/13/2010 |
| 7696094 | Method for improved planarization in semiconductor devices A method for forming a semiconductor device may include forming a silicon oxynitride mask layer over a first layer. The first layer may be etched using the silicon oxynitride mask layer, to form a pattern in the first layer. The pattern may be filled with a dielectr... | 04/13/2010 |
| 7687401 | Substantially spherical composite ceria/titania particles The present invention provides substantially spherical composite ceria/titania particles, a method of forming the same, and chemical mechanical polishing compositions comprising such particles. The substantially spherical particles include a substantially crystallin... | 03/30/2010 |
| 7678703 | Production method of polishing composition A production method of a semiconductor device including: producing a polishing composition containing zirconium oxide sol; and planarizing a substrate having an uneven surface with said polishing composition, wherein the polishing composition containing zirconium ox... | 03/16/2010 |
| 7563718 | Method for forming tungsten layer of semiconductor device and method for forming tungsten wiring layer using the same A semiconductor substrate is loaded into a reaction chamber to form a tungsten layer. A source gas including tungsten (W) is introduced into the reaction chamber to grow a crystal nucleus of the tungsten on the semiconductor substrate. A reduction gas containing bor... | 07/21/2009 |
| 7544618 | Two-step chemical mechanical polishing process A chemical mechanical polishing method is disclosed. The method includes forming a film on a wafer having at least one trench structure thereon; polishing the surface of the film by providing a polishing composition to provide a first polished surface; rinsing the f... | 06/09/2009 |
| 7452819 | Chemical mechanical polishing method of organic film and method of manufacturing semiconductor device There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and d... | 11/18/2008 |
| 7442645 | Method of polishing a silicon-containing dielectric The inventive method of polishing a silicon-containing dielectric layer involves the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of... | 10/28/2008 |
| 7439174 | Multilayer hardmask scheme for damage-free dual damascene processing of SiCOH dielectrics Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device... | 10/21/2008 |
| 7432204 | Wafer and the manufacturing and reclaiming methods thereof A wafer and the manufacturing and reclaiming methods thereof are disclosed. The wafer includes a semiconductor substrate and a protective layer formed on the surface of the semiconductor substrate. The reclaiming method of the wafer includes providing a wafer having... | 10/07/2008 |
| 7429338 | Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization A composition and an associated method for chemical mechanical planarization (or other polishing) are described. The composition includes a surface-modified abrasive modified with at least one stabilizer and at least one catalyst differing from the at least one stab... | 09/30/2008 |
| 7429367 | Method for producing improved cerium oxide abrasive particles and compositions including such particles Provided are methods for manufacturing improved cerium oxide abrasives suitable for forming slurry compositions suitable for CMP processes. The cerium oxide abrasives are produced by the heat treatment of a mixture of a cerium precursor compound under conditions tha... | 09/30/2008 |
| 7427305 | Free radical-forming activator attached to solid and used to enhance CMP formulations This invention relates to a method of making selected oxidizers or other free radical-producing compounds become more effective chemical etchants and/or oxidizers for CMP activities by promoting the formation of the free radicals in a CMP composition with one or mor... | 09/23/2008 |
| 7422700 | Compositions and methods of electrochemical removal of material from a barrier layer of a wafer Methods and compositions have been provided for removing barrier layer material from a work piece during an electrochemical mechanical polishing process while protecting a metallization layer of the work piece. The electrochemical planarization composition includes ... | 09/09/2008 |
| 7422982 | Method and apparatus for electroprocessing a substrate with edge profile control A method and apparatus for electroprocessing a substrate is provided. In one embodiment, a method for electroprocessing a substrate includes the steps of biasing a first electrode to establish a first electroprocessing zone between the electrode and the substrate, a... | 09/09/2008 |
| 7419911 | Compositions and methods for rapidly removing overfilled substrates This invention relates to compositions and methods for removing overfilled substrates, preferably at a relatively high removal rates. Advantageously, a composition according to the invention can contain an oxidizer, preferably a per-type oxidizer such as a peroxide,... | 09/02/2008 |
| 7419519 | Engineered non-polymeric organic particles for chemical mechanical planarization An abrasive composition comprising composite non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The composite particles individually contain at least one nonpolymeri... | 09/02/2008 |
| 7419946 | Chemical solution feeding apparatus and method for preparing slurry An apparatus for feeding slurry to an external device. The apparatus includes a preparation tank for preparing the slurry. A circulation pipe is connected to the preparation tank to circulate the slurry. A feeding pipe is connected between the preparation tank and t... | 09/02/2008 |
| 7416962 | Method for processing a semiconductor wafer including back side grinding A method is provided for processing the back side of a semiconductor wafer after the wafer has been lapped. The process includes grinding the back side of the wafer to remove wafer material, to substantially eliminate lap damage from the back side of the wafer. The ... | 08/26/2008 |
| 7410409 | Abrasive compound for CMP, method for polishing substrate and method for manufacturing semiconductor device using the same, and additive for CMP abrasive compound The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a metho... | 08/12/2008 |
| 7410902 | Composition for cleaning semiconductor device A sulfur-containing detergent composition for cleaning a semiconductor device having an aluminum wire, wherein the sulfur-containing detergent composition is capable of forming a protective film containing a sulfur atom on a surface of an aluminum film in a protecti... | 08/12/2008 |
| 7402521 | Method for chemically mechanically polishing organic film, method of manufacturing semiconductor device, and program therefor There is proposed a polishing method. The method includes feeding a slurry onto a polishing pad, press-contacting a semiconductor substrate held on a polishing head with the polishing pad, the semiconductor substrate having an organic film thereon, and chemically me... | 07/22/2008 |
| 7396768 | Copper damascene chemical mechanical polishing (CMP) for thin film head writer fabrication In one method and embodiment of the present invention, at least one coil layer is formed in a write head, using a two-slurry step of copper damascene chemical mechanical polishing method with a first slurry step removing the undesirable copper that is on top of the ... | 07/08/2008 |
| 7393790 | Method of manufacturing carrier wafer and resulting carrier wafer structures A method is disclosed for preparing carrier wafers for semiconductor device manufacture. The method includes the steps of sorting a plurality of standard carrier wafer blanks into batches by thickness to define a batch of starting carrier wafers that are within a pr... | 07/01/2008 |
| 7390429 | Method and composition for electrochemical mechanical polishing processing A method of processing a substrate having a conductive material layer disposed thereon is provided which includes positioning the substrate in a process apparatus and supplying a first polishing composition between to the substrate. The polishing composition compris... | 06/24/2008 |
| 7390744 | Method and composition for polishing a substrate Polishing compositions and methods for removing conductive materials and barrier materials from a substrate surface are provided. Polishing compositions are provided for removing at least a barrier material from a substrate surface by a chemical mechanical polishing... | 06/24/2008 |
