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| Number | Title | Issue Date |
| 8187977 | Automatic gain control Methods and apparatus for automatic gain control. A film on a substrate is polished by a chemical mechanical polisher that includes a polishing pad and an in-situ monitoring system. The polishing pad includes a first portion, and the in-situ monitoring system includ... | 05/29/2012 |
| 8168541 | CMP polishing slurry and polishing method The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, a water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,... | 05/01/2012 |
| 8153526 | High planarizing method for use in a gate last process A method for performing a chemical-mechanical polishing (CMP) is provided. The method includes processing a semiconductor substrate to form a dummy gate structure on the substrate, to form a hard mask on the dummy gate structure, and to form a contact etch stop laye... | 04/10/2012 |
| 8148266 | Method and apparatus for conformable polishing A multi-station polish system and process for polishing thin, flat (planar) and rigid workpieces. Workpieces are conveyed through multiple polishing stations that include a bulk material removal belt polishing station and finishing rotary polishing station. The bulk... | 04/03/2012 |
| 8148265 | Two-step hardmask fabrication methodology for silicon waveguides Techniques are disclosed for efficiently fabricating semiconductors including waveguide structures. In particular, a two-step hardmask technology is provided that enables a stable etch base within semiconductor processing environments, such as the CMOS fabrication e... | 04/03/2012 |
| 8143166 | Polishing method with inert gas injection A polishing process in a semiconductor device fabrication process employs a polishing composition in which a gaseous phase is created within the polishing composition. During a polishing process, the gaseous phase dynamically responds to changes in the surface profi... | 03/27/2012 |
| 8138090 | Method for forming fine patterns in semiconductor device A method for forming fine patterns in a semiconductor device includes forming a first hard mask layer over an etch target layer, forming first etch mask patterns having negative slopes over the first hard mask layer, thereby forming a resultant structure, forming a ... | 03/20/2012 |
| 8138091 | Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios The invention provides a chemical-mechanical polishing composition comprising a cationic abrasive, a cationic polymer, an inorganic halide salt, and an aqueous carrier. The invention further provides a method of chemically-mechanically polishing a substrate with the... | 03/20/2012 |
| 8133815 | Method of polishing compound semiconductor substrate, compound semiconductor substrate, method of manufacturing compound semiconductor epitaxial substrate, and compound semiconductor epitaxial substrate Compound-semiconductor-substrate polishing methods, compound semiconductor substrates, compound-semiconductor-epitaxial-substrate manufacturing methods, and compound semiconductor epitaxial substrates whereby oxygen superficially present on the substrates reduced. A... | 03/13/2012 |
| 8129279 | Chemical mechanical polish process control for improvement in within-wafer thickness uniformity A method of performing chemical mechanical polish (CMP) processes on a wafer includes providing the wafer; determining a thickness profile of a feature on a surface of the wafer; and, after the step of determining the thickness profile, performing a high-rate CMP pr... | 03/06/2012 |
| 8129278 | Chemical mechanical polishing process A copper/barrier CMP process includes (a) providing a substrate having a bulk metal layer and a barrier layer; (b) polishing the substrate with a first hard polishing pad on a first platen to substantially remove an upper portion of the bulk metal layer, wherein the... | 03/06/2012 |
| 8114776 | Method of manufacturing semiconductor device In a method of manufacturing a semiconductor device for planarizing a silicon oxide film with chemical mechanical polishing using a silicon film formed on a semiconductor substrate as a stopper film, a surface modification film for hydrophilizing the surface of the ... | 02/14/2012 |
| 8114775 | Dihydroxy enol compounds used in chemical mechanical polishing compositions having metal ion oxidizers A chemical mechanical polishing composition contains 1) water, 2) optionally an abrasive material, 3) an oxidizer, preferably a per-type oxidizer, 4) a small amount of soluble metal-ion oxidizer/polishing accelerator, a metal-ion polishing accelerator bound to parti... | 02/14/2012 |
| 8114774 | Semiconductor device, and semiconductor device obtained by such a method The invention relates to a method of manufacturing a semiconductor device with a substrate and a semiconductor body, whereby in the semiconductor body a semiconductor element is formed by means of a mesa-shaped protrusion of the semiconductor body, which is formed o... | 02/14/2012 |
| 8105948 | Use of CMP to contact a MTJ structure without forming a via A process is described for making contact to the buried capping layers of GMR and MTJ devices without the need to form and fill via holes. CMP is applied to the structure in three steps: (1) conventional CMP (2) a Highly Selective Slurry (HSS) is substituted for the... | 01/31/2012 |
| 8084361 | Semiconductor fabrication method suitable for MEMS A method includes depositing a layer of a sacrificial material in a first region above a substrate. The first region of the substrate is separate from a second region of the substrate, where a corrosion resistant film is to be provided above the second region. The c... | 12/27/2011 |
| 8084363 | Polishing slurry and polishing method The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polishe... | 12/27/2011 |
| 8084362 | Polishing slurry and polishing method The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polishe... | 12/27/2011 |
| 8076246 | Method of manufacturing thermally assisted magnetic head A method comprises a first multilayer body forming step of forming a first multilayer body on a first cladding layer, the first multilayer body including a core layer and a first polishing stop layer in order from the first cladding layer side; a first multilayer bo... | 12/13/2011 |
| 8071479 | Chemical mechanical polishing composition and methods relating thereto A method for chemical mechanical polishing of a substrate comprising a barrier material in the presence of at least one of an interconnect metal and a low-k dielectric material using a chemical mechanical polishing composition comprising water; 1 to 40 wt % abrasive... | 12/06/2011 |
| 8071480 | Method and apparatuses for removing polysilicon from semiconductor workpieces Methods and apparatuses for removing polysilicon material from a semiconductor workpiece are disclosed. A particular method includes contacting a polishing pad with a semiconductor workpiece having a surface polysilicon material. The method also includes disposing a... | 12/06/2011 |
| 8062979 | Semiconductor device manufacturing method having high aspect ratio insulating film The object of the present invention is to embed an insulating film in a hole having a high aspect ratio and a small width without the occurrence of a void. The thickness of a polishing stopper layer is reduced by making separate layers respectively serve as a mask d... | 11/22/2011 |
| 8058173 | Methods for producing smooth wafers Methods for reducing the surface roughness of semiconductor wafers through a combination of rough polishing and thermally annealing the wafer. ... | 11/15/2011 |
| 8053367 | Wafer polishing method A wafer polishing method is provided. First, a wafer, having a first surface, a second surface, and a plurality of opening portions depressed on the first surface, is provided. A plastic adhesive is filled in the opening portions and cured later. A polishing step is... | 11/08/2011 |
| 8048809 | Polishing method using chemical mechanical slurry composition A slurry composition includes about 4.25 to about 18.5 weight percent of an abrasive, about 80 to about 95 weight percent of deionized water, and about 0.05 to about 1.5 weight percent of an additive. The slurry composition may further include a surfactant. In a pol... | 11/01/2011 |
| 8039397 | Using optical metrology for within wafer feed forward process control A method of controlling the polishing of a substrate includes polishing a substrate on a first platen using a first set of parameters, obtaining first and second sequences of measured spectra from first and second regions of the substrate with an in-situ optical mon... | 10/18/2011 |
| 8034718 | Method to recover patterned semiconductor wafers for rework Disclosed are embodiments of a method of removing patterned circuit structures from the surface of a semiconductor wafer. The method embodiments comprise blasting the surface of the semiconductor wafer with particles so as to remove substantially all of the patterne... | 10/11/2011 |
| 8017524 | Stable, high rate silicon slurry The invention provides a chemical-mechanical polishing composition comprising wet-process silica, a stabilizer compound, a potassium salt, a secondary amine compound, and water. The invention further provides a method of polishing a substrate with the polishing comp... | 09/13/2011 |
| 8012878 | Atomic layer volatilization process for metal layers A two-stage method to remove a metal layer from a substrate surface comprises using a CMP process to remove a first portion of the metal layer from the substrate surface, and using an ALV process to remove a second portion of the copper layer from the substrate surf... | 09/06/2011 |
| 8008202 | Ruthenium CMP compositions and methods The present invention provides a chemical-mechanical polishing (CMP) composition for polishing a ruthenium-containing substrate in the presence of an oxidizing agent such as hydrogen peroxide without forming a toxic level of ruthenium tetroxide during the polishing ... | 08/30/2011 |
| 8003538 | Method for producing a structure on the surface of a substrate The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that a... | 08/23/2011 |
| 7994058 | Polishing slurry and polishing method The present invention relates to polishing slurry and polishing method used for polishing in a process for forming wirings of a semiconductor device, and the like. There are provided polishing slurry giving a polished surface having high flatness even if the polishe... | 08/09/2011 |
| 7981802 | Method for manufacturing shallow trench isolation layer of semiconductor device An electrical device, such as a semiconductor device, and methods of manufacturing the same. A semiconductor device having a shallow trench isolation (STI) layer may include a pad oxide layer formed over a semiconductor substrate, a trench formed over the substrate,... | 07/19/2011 |
| 7977241 | Method for fabricating highly reliable interconnects A method of fabricating highly reliable tungsten interconnects takes into consideration the effects of charging that can occur within a CMP apparatus due to unrestricted DI water flow, limited only by house supply. Such effects are addressed with the use of a variab... | 07/12/2011 |
| 7968465 | Periodic acid compositions for polishing ruthenium/low K substrates A method of polishing a semiconductor substrate surface having at least one ruthenium feature thereon and at least one dielectric material, wherein the substrate is contacted with an aqueous composition containing from about 0.0005 to about 1 moles/kilogram of perio... | 06/28/2011 |
| 7964508 | Dielectric trenches, nickel/tantalum oxide structures, and chemical mechanical polishing techniques A portion of a conductive layer (310, 910) provides a capacitor electrode (310.0, 910.0). Dielectric trenches (410, 414, 510) are formed in the conductive layer to insulate the capacitor electrode from those portions of the conductive layer whic... | 06/21/2011 |
| 7951717 | Post-CMP treating liquid and manufacturing method of semiconductor device using the same Post-CMP treating liquids are provided, one of which includes water, an amphoteric surfactant, an anionic surfactant, a complexing agent, resin particles having carboxylic group and sulfonyl group on their surfaces, a primary particle diameter thereof ranging from 1... | 05/31/2011 |
| 7951715 | Semiconductor device fabrication method The method comprises the step polishing the surface of a film-to-be-polished formed over a semiconductor substrate 10 with a polishing pad while a polishing slurry containing abrasive grains, and an additive of a surfactant is being supplied onto the polishin... | 05/31/2011 |
| 7951716 | Wafer and method of producing the same A wafer is produced at a step of polishing a predetermined face of a wafer to flatten the predetermined face while supplying a polishing liquid onto a bonded abrasive cloth, wherein the bonded abrasive cloth comprises a urethane bonding material consisting of a soft... | 05/31/2011 |
| 7951718 | Edge removal of silicon-on-insulator transfer wafer A silicon-on-insulator transfer wafer having a front surface with a circumferential lip around a circular recess is polished. In one version, the circular recess on the front surface of the wafer is masked by filling the recess with spin-on-glass. The front surface ... | 05/31/2011 |
