Celebrity Inventors
Comic actor Danny Kaye received patent D166,807 for the co-design of "Blowout Toy or the Like". It's similar to one of those toys that unravels when you blow into at a birthday party except Kaye's has three blowouts going in different directions, not just one.
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| Number | Title | Issue Date |
| 8153525 | Polishing method, polishing apparatus, and method for manufacturing semiconductor device A polishing method includes a first polishing step of halfway polishing a film to be polished formed on a substrate, and a second polishing step of further polishing the polished film, wherein a first film thickness profile showing an in-plane distribution of a film... | 04/10/2012 |
| 8129277 | Method of machining wafer A method of machining a wafer in which, at the time of grinding the back-side surface of the wafer, only a back-side surface region corresponding to a device formation region where semiconductor chips are formed is thinned by grinding, to form a recessed part on the... | 03/06/2012 |
| 8080475 | Removal chemistry for selectively etching metal hard mask Embodiments of the present invention describe a removal chemistry for removing hard mask. The removal chemistry is a wet-etch solution that removes a metal hard mask formed on a dielectric layer, and is highly selective to a metal conductor layer underneath the diel... | 12/20/2011 |
| 8021983 | Method of forming pattern of inorganic material film comprising thermally induced cracking A method of forming a pattern of an inorganic material film, which method is more versatile, easy, and practical. The method includes the steps of: (a) forming a sacrifice layer having a pattern on a substrate by employing a material having a different thermal expan... | 09/20/2011 |
| 7998867 | Method for manufacturing epitaxial wafer An epitaxial wafer is provided capable of eliminating particles in a device process, particles being generated from a scratch in a boundary area between a rear surface and a chamfered surface of a wafer. The scratch in the boundary area between the rear surface and ... | 08/16/2011 |
| 7989348 | Polishing method and polishing apparatus A polishing method that carries out a multi-step polishing process with improved polishing conditions (polishing recipe) while omitting measurement of the surface conditions of a substrate, as carried out between polishing steps thereby increasing the throughput. Th... | 08/02/2011 |
| 7981801 | Chemical mechanical polishing (CMP) method for gate last process A method for fabricating a semiconductor device is provided which includes providing a semiconductor substrate, forming a plurality of transistors, each transistor having a dummy gate structure, forming a contact etch stop layer (CESL) over the substrate including t... | 07/19/2011 |
| 7972963 | Polished semiconductor wafer and process for producing it A polished semiconductor wafer has a front surface and a back surface and an edge R, which is located at a distance of a radius from a center of the semiconductor wafer, forms a periphery of the semiconductor wafer and is part of a profiled boundary of the semicondu... | 07/05/2011 |
| 7964507 | Flexible substrate with electronic devices formed thereon A method of manufacturing an electronic device (10) provides a substrate (20) that has a plastic material. A particulate material (16) is embedded in at least one surface of the substrate. A layer of thin-film semiconductor material is deposited... | 06/21/2011 |
| 7960284 | III-V compound semiconductor substrate manufacturing method Affords a III-V compound semiconductor substrate manufacturing method that enables enhancement of the substrate PL intensity. In such a III-V compound semiconductor substrate manufacturing method, first, the surface 3a of a wafer 3 is polished (... | 06/14/2011 |
| 7915169 | Processes for forming electronic devices including polishing metal-containing layers A process of forming an electronic device can include providing a workpiece. The workpiece can include a substrate, an interlevel dielectric overlying the substrate, a refractory-metal-containing layer over the interlevel dielectric, and a first metal-containing lay... | 03/29/2011 |
| 7825027 | Method for manufacturing memory device A method for manufacturing a memory device including a ferroelectric memory array region and a logic circuit region is provided. The method includes the steps of: forming, above a base substrate, a plurality of ferroelectric capacitors in the ferroelectric memory ar... | 11/02/2010 |
| 7803712 | Multilevel imprint lithography A mold with a protruding pattern is provided that is pressed into a thin polymer film via an imprinting process. Controlled connections between nanowires and microwires and other lithographically-made elements of electronic circuitry are provided. An imprint stamp i... | 09/28/2010 |
| 7790618 | Selective slurry for chemical mechanical polishing An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonioni... | 09/07/2010 |
| 7781341 | Method of manufacturing semiconductor device A method for manufacturing a semiconductor device is provided, which includes feeding a coating liquid comprising a silicon-containing compound dissolved in a solvent onto a semiconductor substrate, revolving the semiconductor substrate to form a coated film contain... | 08/24/2010 |
| 7732332 | Chemical mechanical polishing method with inspection pre and post processing The invention is directed to a chemical mechanical polishing process. The chemical mechanical polishing process comprises steps of providing a wafer disposed at a wafer handling region of a chemical mechanical polishing apparatus and then moving the wafer into a buf... | 06/08/2010 |
| 7682975 | Semiconductor device fabrication method A semiconductor device fabricating method includes forming a thin film at a top surface of a substrate; polishing a back surface of said substrate; and after the polishing of the back surface, polishing said thin film as formed at the top surface of said substrate. | 03/23/2010 |
| 7678702 | CMP composition of boron surface-modified abrasive and nitro-substituted sulfonic acid and method of use A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains a boron surface-modified abrasive, a nitro-substituted sulfonic acid compound, a per-compound oxidizing agent, and water. The compo... | 03/16/2010 |
| 7678701 | Flexible substrate with electronic devices formed thereon A method of manufacturing an electronic device (10) provides a substrate (20) that has a plastic material. A particulate material (16) is embedded in at least one surface of the substrate. A layer of thin-film semiconductor material is deposited... | 03/16/2010 |
| 7642190 | Method of forming thin insulating layer in MRAM device A method of forming a thin insulating layer in an MRAM device makes it possible to effectively prevent the insulating layer from being locally thinned, creating a short circuit or other defect. The method includes forming lower patterns for the MRAM device on a semi... | 01/05/2010 |
| 7629258 | Method for one-to-one polishing of silicon nitride and silicon oxide The present invention provides a method of removing silicon nitride at about the same removal rate as silicon dioxide by CMP. The method utilizes a polishing slurry that includes colloidal silica abrasive particles dispersed in water and additives that modulate the ... | 12/08/2009 |
| 7601642 | Method of processing silicon wafer The inventive method for processing a silicon wafer is a method comprising step 11 in which a single crystal ingot is sliced into thin disc-like wafers; step 13 in which the surface of each wafer is lapped to be planar; step 14 in which the wafe... | 10/13/2009 |
| 7598175 | Apparatus and method for confined area planarization A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to ... | 10/06/2009 |
| 7589022 | Method of chemical mechanical polishing and method of fabricating semiconductor device using the same There is provided a method of chemical mechanical polishing (CMP) and a method of fabricating a semiconductor device using the same. The method includes forming a layer to be polished on a semiconductor substrate including a normally polished region and a dished reg... | 09/15/2009 |
| 7563716 | Polishing method A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film fo... | 07/21/2009 |
| 7553768 | Substrate and a method for polishing a substrate A substrate having flatness of less than 230 nmPV and surface roughness at RMS of less than 0.20 nm. is obtained by a method comprising: a process of polishing an object to be polished with a polishing pad comprising at least one layer having compressibility of 5% o... | 06/30/2009 |
| 7544617 | Die scale control of chemical mechanical polishing A method for control of chemical mechanical polishing of a pattern dependant non-uniform wafer surfaces in a die scale wherein the die in the wafer surface have a plurality of zones of different heights and different pattern densities is provided. The method provide... | 06/09/2009 |
| 7521363 | MEMS device with non-standard profile A method of producing a MEMS device forms structure on a non-standard device wafer. To that end, the method provides the noted non-standard device wafer, which has a wafer outer diameter and a non-standard thickness. As known by those in the art, a standard device w... | 04/21/2009 |
| 7510973 | Method for forming fine pattern in semiconductor device A method for forming a fine pattern in a semiconductor device is provided. In one aspect, the method can construct a fine pattern in semiconductor devices. The fine pattern has a critical dimension that overcomes the resolution limit of an exposure equipment. ... | 03/31/2009 |
| 7498263 | Method of planarizing an inter-metal insulation film A method for forming a planarized inter-metal insulation film is provided. The method includes applying a CMP process to an insulation film as controlled by a polish-stop layer pattern formed on an underlying metal wiring pattern. A PAE based material may be used to... | 03/03/2009 |
| 7446045 | Method of manufacturing nitride substrate for semiconductors In an independent GaN film manufactured by creating a GaN layer on a base heterosubstrate using vapor-phase deposition and then removing the base substrate, owing to layer-base discrepancy in thermal expansion coefficient and lattice constant, warp will be a large Â... | 11/04/2008 |
| 7442645 | Method of polishing a silicon-containing dielectric The inventive method of polishing a silicon-containing dielectric layer involves the use of a chemical-mechanical polishing system comprising (a) an inorganic abrasive, (b) a polishing additive, and (c) a liquid carrier, wherein the polishing composition has a pH of... | 10/28/2008 |
| 7442646 | Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming metal wiring using the slurry. The slurry may include a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film. The CMP method and method o... | 10/28/2008 |
| 7435683 | Apparatus and method for selectively recessing spacers on multi-gate devices Embodiments of an apparatus and methods for fabricating a spacer on one part of a multi-gate transistor without forming a spacer on another part of the multi-gate transistor are generally described herein. Other embodiments may be described and claimed. ... | 10/14/2008 |
| 7435682 | Method of manufacturing semiconductor device Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film h... | 10/14/2008 |
| 7432204 | Wafer and the manufacturing and reclaiming methods thereof A wafer and the manufacturing and reclaiming methods thereof are disclosed. The wafer includes a semiconductor substrate and a protective layer formed on the surface of the semiconductor substrate. The reclaiming method of the wafer includes providing a wafer having... | 10/07/2008 |
| 7432205 | Method for controlling polishing process The invention is directed to a method for controlling a polishing process. The method comprises steps of providing a first wafer, wherein a thin film is located over the first wafer. A film average thickness distribution is obtained by measuring a plurality of thick... | 10/07/2008 |
| 7419909 | Methods of forming a semiconductor device that allow patterns in different regions that have different pitches to be connected Patterns are formed in a semiconductor device by defining a lower layer that includes a first region and a second region on a semiconductor substrate, forming first patterns with a first pitch that extend to the first and second regions, forming second patterns with... | 09/02/2008 |
| 7419519 | Engineered non-polymeric organic particles for chemical mechanical planarization An abrasive composition comprising composite non-polymeric organic particles that is useful for chemical mechanical planarization (CMP), and which can widely be used in the semiconductor industry. The composite particles individually contain at least one nonpolymeri... | 09/02/2008 |
| 7416984 | Method of producing a MEMS device A method of producing a MEMS device removes the bottom side of a device wafer after its movable structure is formed. To that end, the method provides the device wafer, which has an initial bottom side. Next, the method forms the movable structure on the device wafer... | 08/26/2008 |
