Did You Know...
...that the inventor of the electric motor was a blacksmith named Thomas Davenport? Described as "a brilliantly unsuccessful inventor", Davenport invented the first rotary electric motor. In 1836 he headed out -- on foot -- from his Vermont home to file a patent application at the Patent Office in Washington, D.C. By the time he got there, he had squandered away his money and couldn't afford the $30 filing fee so he turned around and went home. When he later mailed in his application with money he'd raised, the Patent office was destroyed in a fire. He did finally get credit for his invention on Feb. 5, 1837.
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| Number | Title | Issue Date |
| 8349738 | Metal precursors for deposition of metal-containing films Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set te... | 01/08/2013 |
| 8278216 | Selective capping of copper The present invention provides methods of selectively depositing refractory metal and metal nitride cap layers onto copper lines inlaid in a dielectric layer. The methods result in formation of a cap layer on the copper lines without significant formation on the sur... | 10/02/2012 |
| 8119526 | Method of forming a metal layer and a method of fabricating a semiconductor device A method of forming metal films includes preparing a substrate, on which an insulating layer and a metal layer formed of a first metal are exposed; and forming a metal capping layer by supplying an organic precursor of a second metal onto the substrate to deposit th... | 02/21/2012 |
| 8076243 | Metal precursors for deposition of metal-containing films Compositions and methods for forming a metal-containing thin film on a substrate. A reactor and at least one substrate in the reactor are provided. A metal-containing bis-β-diketiminate precursor is introduced into the reactor. The reactor is maintained at a set te... | 12/13/2011 |
| 8062977 | Ternary tungsten-containing resistive thin films Heater elements made of high resistivity ternary and quaternary thin films containing three or more of W, C, O, N and Si are provided. The thin films have resistivities at least about 1000 μΩ-cm at 50 to 60 Angstroms. The ternary and quaternary films have improved... | 11/22/2011 |
| 7985680 | Method of forming aluminum-doped metal carbonitride gate electrodes A method for forming an aluminum-doped metal (tantalum or titanium) carbonitride gate electrode for a semiconductor device is described. The method includes providing a substrate containing a dielectric layer thereon, and forming the gate electrode on the dielectric... | 07/26/2011 |
| 7951711 | Metal precursors for semiconductor applications Methods and compositions for depositing metal films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising gold, silver, or copper. More specifically, the disclosed precursor compounds utilize pentadienyl ligands coupled to a ... | 05/31/2011 |
| 7858522 | Method for reducing carbon monoxide poisoning in a thin film deposition system A method for introducing a precursor vapor to a process chamber configured for forming a thin film on a substrate is described. The method includes transporting a process gas containing metal precursor vapor and a CO delivery gas to a process chamber, and introducin... | 12/28/2010 |
| 7858523 | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical β-diketimin... | 12/28/2010 |
| 7851360 | Organometallic precursors for seed/barrier processes and methods thereof Organometallic precursors and methods for deposition on a substrate in seed/barrier applications are herein disclosed. In some embodiments, the organometallic precursor is a ruthenium-containing, tantalum-containing precursor or combination thereof and may be deposi... | 12/14/2010 |
| 7799681 | Method for forming a ruthenium metal cap layer A method for integrating ruthenium (Ru) metal cap layers and modified Ru metal cap layers into copper (Cu) metallization of semiconductor devices to improve electromigration (EM) and stress migration (SM) in bulk Cu metal. In one embodiment, the method includes prov... | 09/21/2010 |
| 7709386 | Atomic layer deposition method and semiconductor device formed by the same There is provided a method of manufacturing a semiconductor device, including the following steps: flowing a first precursor gas to the semiconductor substrate within the ALD chamber to form a first discrete monolayer on the semiconductor substrate; flowing an inert... | 05/04/2010 |
| 7608539 | ALD method and apparatus A method and an apparatus for executing efficient and cost-effective Atomic Layer Deposition (ALD) at low temperatures are presented. ALD films such as oxides and nitrides are produced at low temperatures under controllable and mild oxidizing conditions over substra... | 10/27/2009 |
| 7589020 | Method for depositing titanium nitride films for semiconductor manufacturing Embodiments of the invention describe TiN deposition methods suitable for high volume manufacturing of semiconductor devices on large patterned substrates (wafers). One embodiment describes a chemical vapor deposition (CVD) process using high gas flow rate of a tetr... | 09/15/2009 |
| 7585769 | Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE A method of suppressing parasitic particle formation in a metal organic chemical vapor deposition process is described. The method may include providing a substrate to a reaction chamber, and introducing an organometallic precursor, a particle suppression compound a... | 09/08/2009 |
| 7579276 | Substrate processing apparatus and method of manufacturing semiconductor device To prevent particles from generating by reducing a contact-gas area and improve a purge efficiency by reducing a flow passage capacity. There is provided a substrate processing apparatus, comprising a processing chamber 1 for processing a substrate 2; ... | 08/25/2009 |
| 7572731 | Unsymmetrical ligand sources, reduced symmetry metal-containing compounds, and systems and methods including same The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In some embodiments, the metal-containing compounds are homoleptic complexes that include unsymmetrical β-diketimin... | 08/11/2009 |
| 7566661 | Electroless treatment of noble metal barrier and adhesion layer A method of forming an EL-Cu enhanced noble metal layer begins with providing a semiconductor substrate in a reaction chamber, wherein the semiconductor substrate includes a trench etched into a dielectric layer. Next, an organometallic precursor containing a noble ... | 07/28/2009 |
| 7550385 | Amine-free deposition of metal-nitride films A method for forming a metal carbide layer begins with providing a substrate, an organometallic precursor material, at least one doping agent such as nitrogen, and a plasma such as a hydrogen plasma. The substrate is placed within a reaction chamber; and heated. A p... | 06/23/2009 |
| 7547632 | Methods of forming metal layers in the fabrication of semiconductor devices A metal deposition processing apparatus includes a first processing chamber configured for holding a semiconductor substrate therein. A second processing chamber is configured for holding the semiconductor substrate therein and for forming an upper metal layer there... | 06/16/2009 |
| 7531458 | Organometallic compounds Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using... | 05/12/2009 |
| 7524765 | Direct tailoring of the composition and density of ALD films A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic precursor according to a different second set of conditions in the presence of the substrate; and formin... | 04/28/2009 |
| 7491645 | Method for manufacturing a semiconductor device A method for manufacturing a semiconductor device includes: forming a protrusion-patterned layer on a substrate, the protrusion-patterned layer including a plurality of separated protrusions, each of which includes a base portion formed on the substrate and a top en... | 02/17/2009 |
| 7488683 | Chemical vapor deposited film based on a plasma CVD method and method of forming the film A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing ... | 02/10/2009 |
| 7462559 | Systems and methods for forming metal-containing layers using vapor deposition processes A method of forming (and an apparatus for forming) a metal containing layer on a substrate, particularly a semiconductor substrate or substrate assembly for use in manufacturing a semiconductor or memory device structure, using one or more homoleptic and/or heterole... | 12/09/2008 |
| 7459395 | Method for purifying a metal carbonyl precursor A method of purifying a metal carbonyl precursor in a metal precursor vaporization system where the metal carbonyl precursor comprises a metal particulate impurity. The method includes flowing a CO-containing gas through the metal precursor vaporization system to a ... | 12/02/2008 |
| 7452811 | Method for forming a wiring of a semiconductor device, method for forming a metal layer of a semiconductor device and apparatus for performing the same In a method for forming a wiring of a semiconductor device using an atomic layer deposition, an insulating interlayer is formed on a substrate. Tantalum amine derivatives represented by a chemical formula Ta(NR1)(NR2R3)3 i... | 11/18/2008 |
| 7442643 | Methods of forming conductive elements using organometallic layers and flowable, curable conductive materials A conductive element is formed on a substrate by forming an organometallic layer on at least a portion of a surface of the substrate, heating a portion of the organometallic layer, and removing an unheated portion of the organometallic layer. In other methods, a flo... | 10/28/2008 |
| 7439179 | Healing detrimental bonds in deposited materials A method for healing detrimental bonds in deposited materials, for example porous, low-k dielectric materials, including oxydatively processing a deposited material, processing the deposited material with a trialkyl group III compound, and processing in the presence... | 10/21/2008 |
| 7439181 | Method for processing interior of vapor phase deposition apparatus, method for depositing thin film and method for manufacturing semiconductor device A method for depositing a metal compound film on the wafer by using a vapor phase deposition apparatus 100, including: forming a thin film on the wafer in an interior of the vapor phase deposition apparatus 100 by introducing a source gas for the metal... | 10/21/2008 |
| 7439180 | Dispenser system for atomic beam assisted metal organic chemical vapor deposition (MOCVD) A dispenser system for use in atomic beam assisted metal organic chemical vapor deposition is provided as well as a method of depositing an ultra-thin film using the same. The inventive dispenser system includes an atomic source having an unimpeded line of site to a... | 10/21/2008 |
| 7435678 | Method of depositing noble metal electrode using oxidation-reduction reaction Provided is a method of depositing a noble metal layer using an oxidation-reduction reaction. The method includes flowing a noble metal source gas, an oxidizing gas, and a reducing gas into a reaction chamber; and generating plasma in the reaction chamber to form a ... | 10/14/2008 |
| 7432195 | Method for integrating a conformal ruthenium layer into copper metallization of high aspect ratio features A method of integrated processing of a patterned substrate for copper metallization. The method includes providing the patterned substrate containing a via and a trench in a vacuum processing tool, and performing an integrated process on the patterned substrate in t... | 10/07/2008 |
| 7410918 | Systems and methods for forming metal oxides using alcohols A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process, one or more alcohols, and one or more metal-containing precursor compounds. ... | 08/12/2008 |
| 7407875 | Low resistance contact structure and fabrication thereof Embodiments of the present invention provide a method of fabricating a contact structure in a layer of dielectric material between a semiconductor device and a back-end-of-line interconnect. The method includes creating at least one contact opening in said layer of ... | 08/05/2008 |
| 7393785 | Methods and apparatus for forming rhodium-containing layers A method of forming a rhodium-containing layer on a substrate, such as a semiconductor wafer, using complexes of the formula LyRhYz is provided. Also provided is a chemical vapor co-deposited platinum-rhodium alloy barriers and electrodes for c... | 07/01/2008 |
| 7371651 | Flat-type capacitor for integrated circuit and method of manufacturing the same Embodiments of the invention provide flat-type capacitors that prevent degradation of the dielectric layer, thereby improving the electrical properties of the capacitor. The capacitor includes a lower interconnection formed in a predetermined portion of a semiconduc... | 05/13/2008 |
| 7371633 | Dielectric layer for semiconductor device and method of manufacturing the same A semiconductor device comprises a silicate interface layer and a high-k dielectric layer overlying the silicate interface layer. The high-k dielectric layer comprises metal alloy oxides. ... | 05/13/2008 |
| 7368369 | Method for activating P-type semiconductor layer A method for activating the P-type semiconductor layer of a semiconductor device is disclosed in this present invention. The above-mentioned method can activate the impurities in the P-type semiconductor layer of a semiconductor device by plasma. The plasma comprise... | 05/06/2008 |
| 7368402 | Systems and methods for forming tantalum oxide layers and tantalum precursor compounds A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example. ... | 05/06/2008 |
