Class 438/680 - Utilizing chemical vapor deposition (i.e., CVD)

Subclass of Class 438 - Semiconductor device manufacturing: process
Definition: Processes wherein the conductive material is deposited utilizing
No. of patents: 1185
Last issue date: 05/29/2012

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Number	Title	Issue Date
8187973	Method for manufacturing semiconductor device and the semiconductor device A method for manufacturing a semiconductor device which includes: alternately supplying a silicon source and an oxidant to deposit a silicon oxide film on a surface of a semiconductor substrate, wherein the silicon source is supplied under a supply condition where a...	05/29/2012
8163648	Atomic layer deposition methods An atomic layer deposition method includes providing a semiconductor substrate within a deposition chamber. A first metal halide-comprising precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. The first mo...	04/24/2012
8101521	Methods for improving uniformity and resistivity of thin tungsten films The methods described herein relate to deposition of low resistivity, highly conformal tungsten nucleation layers. These layers serve as a seed layers for the deposition of a tungsten bulk layer. The methods are particularly useful for tungsten plug fill in which tu...	01/24/2012
8076242	Methods of forming an amorphous silicon thin film A method for forming an amorphous silicon thin film is disclosed. In some embodiments, a method includes loading a substrate into a reaction chamber; and conducting a plurality of deposition cycles on the substrate. Each of at least two of the cycles includes: suppl...	12/13/2011
8071477	Method of manufacturing semiconductor device and substrate processing apparatus Formation of a boron compound is suppressed on the inner wall of a nozzle disposed in a high-temperature region of a process chamber. A semiconductor device manufacturing method comprises forming a boron doped silicon film by simultaneously supplying at least a boro...	12/06/2011
8071476	Cobalt titanium oxide dielectric films Electronic apparatus and methods of forming the electronic apparatus include a cobalt titanium oxide film on a substrate for use in a variety of electronic systems. The cobalt titanium oxide film may be structured as one or more monolayers. The cobalt titanium oxide...	12/06/2011
8053366	Al-doped charge trap layer and non-volatile memory device including the same Provided is an aluminum (Al) doped charge trap layer, a non-volatile memory device and methods of fabricating the same. The charge trap layer may include a plurality of silicon nano dots that trap charges and a silicon oxide layer that covers the silicon nano dots, ...	11/08/2011
8030212	Process for selective area deposition of inorganic materials An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the depositi...	10/04/2011
8012876	Delivery of vapor precursor from solid source A method is disclosed that uses solid precursors for semiconductor processing. A solid precursor is provided in a storage container. The solid precursor is transformed into a liquid state in the storage container. The liquid state precursor is transported from the s...	09/06/2011
7985679	Atomic layer deposition methods An atomic layer deposition method includes providing a semiconductor substrate within a deposition chamber. A first metal halide-comprising precursor gas is flowed to the substrate within the chamber effective to form a first monolayer on the substrate. The first mo...	07/26/2011
7972961	Purge step-controlled sequence of processing semiconductor wafers A method of processing semiconductor substrates includes: depositing a film on a substrate in a reaction chamber; evacuating the reaction chamber without purging the reaction chamber; opening a gate valve and replacing the substrate with a next substrate via the tra...	07/05/2011
7964505	Atomic layer deposition of tungsten materials Embodiments of the invention provide an improved process for depositing tungsten-containing materials. The process utilizes soak processes and vapor deposition processes, such as atomic layer deposition (ALD) to provide tungsten films having significantly improved s...	06/21/2011
7964504	PVD-based metallization methods for fabrication of interconnections in semiconductor devices Recessed features on a Damascene substrate are filled with metal using plasma PVD. Recessed features having widths of less than about 300 nm, e.g., between about 30-300 nm can be filled with metals (e.g., copper and aluminum), without forming voids. In one approach,...	06/21/2011
7939447	Inhibitors for selective deposition of silicon containing films A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for...	05/10/2011
7915165	Substrate treating apparatus and method for manufacturing semiconductor device A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) r...	03/29/2011
7871928	Methods for discretized processing of regions of a substrate The present invention provides methods and systems for discretized, combinatorial processing of regions of a substrate such as for the discovery, implementation, optimization, and qualification of new materials, processes, and process sequence integration schemes us...	01/18/2011
7867905	System and method for semiconductor processing Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid ...	01/11/2011
7846839	Film forming method, semiconductor device manufacturing method, semiconductor device, program and recording medium An adhesion between a Cu diffusion barrier film and a Cu wiring in a semiconductor device is improved and reliability of the semiconductor device is improved. A film forming method for forming a Cu film on a substrate to be processed is provided with a first process...	12/07/2010
7838422	Al-doped charge trap layer, non-volatile memory device and methods of fabricating the same Provided is an aluminum (Al) doped charge trap layer, a non-volatile memory device and methods of fabricating the same. The charge trap layer may include a plurality of silicon nano dots that trap charges and a silicon oxide layer that covers the silicon nano dots, ...	11/23/2010
7833906	Titanium silicon nitride deposition Titanium silicon nitride (TiSiN) films are formed in a cyclic chemical vapor deposition process. In some embodiments, the TiSiN films are formed in a batch reactor using TiCl4, NH3 and SiH4 as precursors. Substrates are provided in a...	11/16/2010
7807573	Laser assisted chemical vapor deposition for backside die marking and structures formed thereby Methods of forming a microelectronic structure are described. Embodiments of those methods include forming an identification mark on a portion of a backside of an individual die of a wafer by utilizing laser assisted CVD, wherein the formation of the identification ...	10/05/2010
7799680	Surface preparation prior to deposition on germanium Methods are provided for treating germanium surfaces in preparation for subsequent deposition, particularly gate dielectric deposition by atomic layer deposition (ALD). Prior to depositing, the germanium surface is treated with plasma products or thermally reacted w...	09/21/2010
7786010	Method for forming a thin layer on semiconductor substrates An apparatus and a method form a thin layer on each of multiple semiconductor substrates. A processing chamber of the apparatus includes a boat in which the semiconductor substrates are arranged in a vertical direction. A vaporizer vaporizes a liquid metal precursor...	08/31/2010
7786011	Composition and methods for forming metal films on semiconductor substrates using supercritical solvents Compositions and methods for forming metal films on semiconductor substrates are disclosed. One of the disclosed methods comprises: heating the semiconductor substrate to obtain a heated semiconductor substrate; exposing the heated semiconductor substrate to a compo...	08/31/2010
7776742	Film-forming method A TiN film is formed to have a predetermined thickness on a semiconductor wafer by heating the semiconductor wafer at a film formation temperature within a process container and performing a cycle including a first step and a second step at least once. The first ste...	08/17/2010
7772120	Chemical vapor deposition method for the incorporation of nitrogen into materials including germanium and antimony A chemical vapor deposition (CVD) method for depositing materials including germanium (Ge), antimony (Sb) and nitrogen (N) which, in some embodiments, has the ability to fill high aspect ratio openings is provided. The CVD method of the instant invention permits for...	08/10/2010
7759248	Semiconductor memory device and method of fabricating the same A semiconductor memory device and a method of fabricating the same are disclosed. The semiconductor memory device may include a conductive layer doped with impurities, a non-conductive layer on the conductive layer and undoped with impurities, an interlayer insulati...	07/20/2010
7754608	Manufacturing method for the integration of nanostructures into microchips State-of-the-art synthesis of carbon nanostructures (25) by chemical vapor deposition involve heating a catalyst material to high temperatures up 700-1000° C. in a furnace and flowing hydrocarbon gases through the reactor over a period of time. In order to e...	07/13/2010
7745333	Methods for depositing tungsten layers employing atomic layer deposition techniques In one embodiment of the invention, a method for forming a tungsten-containing layer on a substrate is provided which includes positioning a substrate containing a barrier layer disposed thereon in a process chamber, exposing the substrate to a first soak process fo...	06/29/2010
7737035	Dual seal deposition process chamber and process An apparatus and method for sealing and unsealing a chemical deposition apparatus in a chemical deposition process chamber includes a microvolume that has dual sealing elements at its periphery. One seal, the outer seal, is used to seal the inside of the microvolume...	06/15/2010
7737034	Substrate treating apparatus and method for manufacturing semiconductor device A support section (28) for supporting a wafer (1) is convexly formed in the center of a receiving section (26) of a support groove (25) of a boat 21. At the time of boat loading of the boat (21), in which wafers (1) r...	06/15/2010
7713874	Periodic plasma annealing in an ALD-type process Methods for performing periodic plasma annealing during atomic layer deposition are provided along with structures produced by such methods. The methods include contacting a substrate with a vapor-phase pulse of a metal source chemical and one or more plasma-excited...	05/11/2010
7709385	Method for depositing tungsten-containing layers by vapor deposition techniques In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten-containing layer by sequentially exposing a substrate to a processing gas and a tungsten-containing gas during an atomic layer deposit...	05/04/2010
7709384	Tantalum amide complexes for depositing tantalum-containing films, and method of making same Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microele...	05/04/2010
7700486	Oxide-like seasoning for dielectric low k films A method for seasoning a chamber and depositing a low dielectric constant layer on a substrate in the chamber is provided. In one aspect, the method includes seasoning the chamber with a first mixture comprising one or more organosilicon compounds and one or more ox...	04/20/2010
7691749	Deposition of tungsten nitride Methods for depositing a tungsten nitride layer are described. The methods form a tungsten nitride layer using a carefully controlled deposition technique such as pulsed nucleation layer (PNL). Initially, a tungsten layer is formed on a substrate surface. The tungst...	04/06/2010
7687398	Technique for forming nickel silicide by depositing nickel from a gaseous precursor Nickel silicide is formed on the basis of a gaseous precursor, such as nickel tetra carbonyl, wherein the equilibrium of the decomposition of this gas may be controlled to obtain a highly selective nickel silicide formation rate. Moreover, any etch step for removing...	03/30/2010
7682973	Method of forming a carbon nanotube structure and method of manufacturing field emission device using the method of forming a carbon nanotube structure A method of forming a Carbon NanoTube (CNT) structure and a method of manufacturing a Field Emission Device (FED) using the method of forming a CNT structure includes: forming an electrode on a substrate, forming a buffer layer on the electrode, forming a catalyst l...	03/23/2010
7678698	Method of forming a semiconductor device with multiple tensile stressor layers A semiconductor device has at least two tensile stressor layers that are cured with UV radiation. A second tensile stressor layer is formed after a first stressor layer. In some examples, the tensile stressor layers include silicon nitride and hydrogen. In some exam...	03/16/2010
7674713	Atmospheric pressure chemical vapor deposition A process for coating a substrate at atmospheric pressure comprises the steps of vaporizing a controlled mass of semiconductor material at substantially atmospheric pressure within a heated inert gas stream, to create a fluid mixture having a temperature above the c...	03/09/2010

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Class 438/680 - Utilizing chemical vapor deposition (i.e., CVD)