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Method and apparatus for making a drink hop along a bar or counter
A method for generating a drink which appears to hop from a remote spot on the bar or counter and take one or more leaps, before landing in a patron's glass.
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| Number | Title | Issue Date |
| 8133811 | Semiconductor device manufacturing method, semiconductor device manufacturing apparatus, computer program and storage medium A semiconductor device, which suppresses formation of an organic impurity layer and has excellent adhesiveness to a copper film and a metal to be a base, is manufactured. A substrate (wafer W) coated with a barrier metal layer (base film) 13 formed of a metal... | 03/13/2012 |
| 7972960 | Method for manufacturing thin film A method for manufacturing a thin film includes: applying a liquid to a surface of a processing target member having at least one of a trench and a concave portion. The liquid includes a solvent and at least one of fine particles of a metal, fine particles of a semi... | 07/05/2011 |
| 7867904 | Method and system for isolated and discretized process sequence integration A system for processing a semiconductor substrate is provided. The system includes a mainframe having a plurality of modules attached thereto. The modules include processing modules, storage modules, and transport mechanisms. The processing modules may include combi... | 01/11/2011 |
| 7795144 | Method for forming electrode structure for use in light emitting device and method for forming stacked structure A method for forming an electrode structure in a light emitting device is disclosed. The method includes the steps of: forming a mask material layer having an opening; depositing a first material layer on the mask material layer and on a portion of a compound semico... | 09/14/2010 |
| 7745332 | PVD-based metallization methods for fabrication of interconnections in semiconductor devices Recessed features on a Damascene substrate are filled with metal using plasma PVD. Recessed features having widths of less than about 300 nm, e.g., between about 30-300 nm can be filled with metals (e.g., copper and aluminum), without forming voids. In one approach,... | 06/29/2010 |
| 7709383 | Film forming method, and substrate-processing apparatus A film forming method comprising forming a liquid coating film on a substrate by supplying a liquid containing a coating type thin film forming substance and a solvent onto the substrate, substantially converging a variation in film thickness of the coating film, ma... | 05/04/2010 |
| 7659204 | Oxidized barrier layer A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous isla... | 02/09/2010 |
| 7618893 | Methods of forming a layer for barrier applications in an interconnect structure Methods of forming a barrier layer are provided. In one embodiment, the method includes providing a substrate into a physical valor deposition (PVD) chamber, supplying at least two reactive gases and an inert gas into the PVD chamber, sputtering a source material fr... | 11/17/2009 |
| 7601639 | Method for conditioning a microelectronics device deposition chamber The present invention provides, in one aspect, the present invention provides, in one embodiment, a method of conditioning a deposition chamber 100. This method comprises placing an undercoat on the walls of a deposition chamber 100 and depositing a pr... | 10/13/2009 |
| 7592255 | Fabricating arrays of metallic nanostructures A patterned array of metallic nanostructures and fabrication thereof is described. A plurality of nanowires is grown on a substrate, the plurality of nanowires being laterally arranged on the substrate in a predetermined array pattern. The plurality of nanowires is ... | 09/22/2009 |
| 7351596 | Method and system for operating a physical vapor deposition process A method for fabricating semiconductor wafers using physical vapor deposition. The method includes maintaining a substrate on a susceptor in a chamber. The substrate has a face positioned within a vicinity of a target material, which is within the chamber. The targe... | 04/01/2008 |
| 7351657 | Method and apparatus for applying external coating to grid array packages for increased reliability and performance A method and apparatus are disclosed for selective removal of a conformal coating from the solder balls of grid array packages such that the benefits of the coating are realized. An ancillary benefit of the invention is improved process-ability of the grid array pac... | 04/01/2008 |
| 7348274 | Method of aligning carbon nanotubes and method of manufacturing field emission device using the same A method of aligning carbon nanotubes (CNTs) and a method of manufacturing a field emission device (FED) using the same, wherein a mold having an intaglio pattern is prepared, an aqueous solution containing an amphiphilic organic material and the CNTs are coated on ... | 03/25/2008 |
| 7341942 | Method for forming metal line of semiconductor device A method for forming a metal line of a semiconductor device forms an aluminum line having an excellent orientation. A specific resistance of a metal line is reduced, thereby enabling sufficient supply of a desired electric current. The method includes steps of formi... | 03/11/2008 |
| 7341948 | Method of making a semiconductor structure with a plating enhancement layer Disclosed is a method of making a semiconductor structure, wherein the method includes forming an interlayer dielectric (ILD) layer on a semiconductor layer, forming a conductive plating enhancement layer (PEL) on the ILD, patterning the ILD and PEL, depositing a se... | 03/11/2008 |
| 7341944 | Methods for synthesis of metal nanowires Methods for synthesizing metal nanowires are provided. A metalorganic layer is deposited on a substrate as a thin film. The thermal decomposition of the metalorganic thin film in the presence of air synthesizes metal nanowires. The metal can be varied to produce nan... | 03/11/2008 |
| 7300859 | Atmospheric glow discharge with concurrent coating deposition A plasma is produced in a treatment space (58) by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes (54,56) separated by a dielectric material (64), a precursor material is i... | 11/27/2007 |
| 7285196 | Methods and apparatus for making integrated-circuit wiring from copper, silver, gold, and other metals In recent years, copper wiring has emerged as a promising substitute for the aluminum wiring in integrated circuits, because copper offers lower electrical resistance and better reliability at smaller dimensions than aluminum. However, use of copper typically requir... | 10/23/2007 |
| 7271094 | Multiple shadow mask structure for deposition shadow mask protection and method of making and using same The present invention is a multi-layer shadow mask and method of use thereof. The multi-layer shadow mask includes a sacrificial mask bonded to a deposition mask. The sacrificial mask provides protection against an accumulation of evaporant on the deposition mask wh... | 09/18/2007 |
| 7268077 | Carbon nanotube reinforced metallic layer A method and apparatus including an interconnect structure having a surface, a plurality of nanotubes disposed adjacent to the surface, and a metallic layer disposed adjacent to the surface and substantially including the nanotubes. An assembly may include a first e... | 09/11/2007 |
| 7262130 | Methods for making integrated-circuit wiring from copper, silver, gold, and other metals Integrated circuits, the key components in thousands of electronic and computer products, include interconnected networks of electrical components. The components are typically wired, or interconnected, together with aluminum wires. In recent years, researchers have... | 08/28/2007 |
| 7259387 | Nonvolatile semiconductor memory device A nonvolatile memory element is formed by layering a lower electrode, a variable resistor and an upper electrode in sequence. The variable resistor is formed in which crystallinity and amorphism are mixed. Thus, the nonvolatile memory element is formed. More prefera... | 08/21/2007 |
| 7247564 | Electronic device One embodiment of a method of making an electronic device includes forming on a substrate surface a first layer having a peak-valley-peak profile, and forming a second layer on the first layer by use of a target positioned along a line-of-sight that excludes a floor... | 07/24/2007 |
| 7247563 | Filling high aspect ratio openings by enhanced electrochemical deposition (ECD) One embodiment of the invention is a method for void-free filling with a metal or an alloy inside openings by electrochemical deposition (ECD), said method including steps of: (a) providing a substrate with at least one opening and a field surrounding the at least o... | 07/24/2007 |
| 7241690 | Method for conditioning a microelectronics device deposition chamber The present invention provides, in one aspect, a method of conditioning a deposition chamber 100. An undercoat is placed on the walls of a deposition chamber 100 and a pre-deposition coat is deposited over the undercoat with a plasma gas mixture conducted at a high ... | 07/10/2007 |
| 7238606 | Semiconductor devices and method for fabricating the same Methods for fabricating a copper interconnect of a semiconductor device are disclosed. An example method for fabricating a copper interconnect of a semiconductor device deposits a first insulating layer on a substrate having at least one predetermined structure, for... | 07/03/2007 |
| 7205233 | Method for forming CoWRe alloys by electroless deposition A method for fabricating a capping layer with enhanced barrier resistance to both copper and oxygen diffusion, comprises forming a capping layer on a conductive surface of an interconnect, wherein the capping layer comprises cobalt (Co), tungsten (W), rhenium (Re), ... | 04/17/2007 |
| 7192866 | Source alternating MOCVD processes to deposit tungsten nitride thin films as barrier layers for MOCVD copper interconnects An alternating source MOCVD process is provided for depositing tungsten nitride thin films for use as barrier layers for copper interconnects. Alternating the tungsten precursor produces fine crystal grain films, or possibly amorphous films. The nitrogen source may ... | 03/20/2007 |
| 7189636 | Fabrication method of semiconductor integrated circuit device A low resistance Co silicide layer with less leakage current is formed over the surface of the source and drain of a MISFET by optimizing the film forming conditions and annealing conditions upon formation of Co (cobalt) silicide. More specifically, a low resistance... | 03/13/2007 |
| 7144808 | Integration flow to prevent delamination from copper The present invention provides, in one embodiment, method of forming a barrier layer 300 over a semiconductor substrate 110. The method comprises forming an opening 120 in an insulating layer 130 located over a substrate thereby uncovering an underlying copper layer... | 12/05/2006 |
| 7135407 | Method of manufacturing a semiconductor device In a method of manufacturing a semiconductor device, a tungsten layer pattern having an oxidized surface is formed on a substrate. A source gas including silicon is provided to the oxidized surface of the tungsten layer pattern to form a protecting layer on the oxid... | 11/14/2006 |
| 7094675 | Structure having spatially separated photo-excitable electron-hole pairs and method of manufacturing same A method for producing quantum dots. The method includes cleaning an oxide substrate and separately cleaning a metal source. The substrate is then heated and exposed to the source in an oxygen environment. This causes metal oxide quantum dots to form on the surface ... | 08/22/2006 |
| 7086918 | Low temperature process for passivation applications An organic electroluminescent device comprising an anode layer on a substrate, an organic layer on the anode layer, and a cathode layer on the organic layer. In one embodiment, the cathode layer is subjected to H2 plasma prior to deposition of a protectiv... | 08/08/2006 |
| 7084053 | Unidirectionally conductive materials for interconnection A method of forming and a device including an interconnect structure having a unidirectional electrical conductive material is described. The unidirectional conductive material may overlie interconnect materials, and/or may surround interconnect materials, such as b... | 08/01/2006 |
| 7067420 | Methods for forming a metal layer on a semiconductor A metal layer is formed on an integrated circuit device including forming an insulating layer on an integrated circuit substrate. A contact hole is formed by selectively etching the insulating layer to thereby partially expose the substrate. A metal layer including ... | 06/27/2006 |
| 7067417 | Methods of removing resistive remnants from contact holes using silicidation A contact hole can be formed in an insulating layer to expose a surface of an underlying silicon layer at a bottom of the contact hole having a first size. A metal silicide layer can be formed beneath the bottom of the contact hole and removed to form a void beneath... | 06/27/2006 |
| 7067405 | Atmospheric glow discharge with concurrent coating deposition A plasma is produced in a treatment space by diffusing a plasma gas at atmospheric pressure and subjecting it to an electric field created by two metallic electrodes separated by a dielectric material, a precursor material is mixed with the plasma, and a substrate f... | 06/27/2006 |
| 7015495 | Metallic very thin film, metallic very thin film multilayer body, and method for manufacturing the metallic very thin film or the metallic very thin film laminate The present invention relates to an ultra-thin metal film, an ultra-thin metal multilayer film, and a method of fabricating an ultra-thin metal film or an ultra-thin metal multilayer film. The ultra-thin metal film and the ultra-thin metal multilayer film can be obt... | 03/21/2006 |
| 6998331 | Methods for fabricating three dimensional anisotropic thin films and products produced thereby A three dimensional structure comprising at least two materials capable of being deposited by vapor deposition. The structure is fabricated by the controlled vapor deposition of the materials onto a substrate. ... | 02/14/2006 |
| 6995088 | Surface treatment of copper to improve interconnect formation The present invention provides, in one embodiment, a method of forming a copper layer (100) over a semiconductor substrate (105). The method comprises coating a copper seed layer (110) located over a semiconductor substrate with a protective age... | 02/07/2006 |
